Name: G3R30MT12J
Brand: GeneSiC Semiconductor
SKU: G3R30MT12J
Availability: InStock
Rating: 5 (161 reviews)

G3R30MT12J

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Teilenummer	G3R30MT12J
Hersteller	GeneSiC Semiconductor
Beschreibung	SIC MOSFET N-CH 96A TO263-7
Datenblatt
Paket	-
ECAD
Auf Lager	192 piece(s)
Stückpreis	Request a Quote
Lieferzeit	Um bestätigt zu werden
Geschatte Leveringstijd	Okt 25 - Okt 30 (Kies voor snelle verzending)
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G3R30MT12J Spezifikationen

Hersteller	GeneSiC Semiconductor
Rubrik	Diskrete Halbleiterprodukte - Transistoren - FETs, MOSFET - Einzeln
Paket	-
ECAD
Serie	G3R™
FET Typ	N-Channel
Technologie	SiCFET (Silicon Carbide)
Drain auf Source-Spannung (Vdss)	1200 V
Strom - Dauerablass (Id) @ 25 ° C	96A (Tc)
Antriebsspannung (Max. Rds Ein, Min Rds Ein)	15V
Vgs (th) (Max) @ Id	2.69V @ 12mA
Gate Ladung (Qg) (Max) @ Vgs	155 nC @ 15 V
Eingangskapazität (Ciss) (Max) @ Vds	3901 pF @ 800 V
Vgs (Max)	±15V
FET-Eigenschaft	-
Verlustleistung (Max)	459W (Tc)
Rds Ein (Max) @ Id, Vgs	36mOhm @ 50A, 15V
Betriebstemperatur	-55°C ~ 175°C (TJ)
Befestigungsart	Surface Mount
Lieferantengerätepaket	TO-263-7
Paket / Fall	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

G3R30MT12J Packaging

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6. What is the process for return or replacement of G3R30MT12J?

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of G3R30MT12J.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations
7.How to contact us to get technical supports, such as G3R30MT12J pin diagram, G3R30MT12J datasheet?

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G3R30MT12J

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