Name: G3R350MT12J
Brand: GeneSiC Semiconductor
SKU: G3R350MT12J
Availability: InStock
Rating: 5 (95 reviews)

G3R350MT12J

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Teilenummer	G3R350MT12J
Hersteller	GeneSiC Semiconductor
Beschreibung	SIC MOSFET N-CH 11A TO263-7
Datenblatt
Paket	-
ECAD
Auf Lager	11.241 piece(s)
Stückpreis	Request a Quote
Lieferzeit	Um bestätigt zu werden
Geschatte Leveringstijd	Dez 30 - Jan 4 (Kies voor snelle verzending)
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G3R350MT12J Spezifikationen

Hersteller	GeneSiC Semiconductor
Rubrik	Diskrete Halbleiterprodukte - Transistoren - FETs, MOSFET - Einzeln
Paket	-
ECAD
Serie	G3R™
FET Typ	N-Channel
Technologie	SiCFET (Silicon Carbide)
Drain auf Source-Spannung (Vdss)	1200 V
Strom - Dauerablass (Id) @ 25 ° C	11A (Tc)
Antriebsspannung (Max. Rds Ein, Min Rds Ein)	15V
Vgs (th) (Max) @ Id	2.69V @ 2mA
Gate Ladung (Qg) (Max) @ Vgs	12 nC @ 15 V
Eingangskapazität (Ciss) (Max) @ Vds	334 pF @ 800 V
Vgs (Max)	±15V
FET-Eigenschaft	-
Verlustleistung (Max)	75W (Tc)
Rds Ein (Max) @ Id, Vgs	420mOhm @ 4A, 15V
Betriebstemperatur	-55°C ~ 175°C (TJ)
Befestigungsart	Surface Mount
Lieferantengerätepaket	TO-263-7
Paket / Fall	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

G3R350MT12J Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of G3R350MT12J.

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Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations
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G3R350MT12J

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