Name: ISL9N327AD3ST
Brand: Fairchild Semiconductor
SKU: ISL9N327AD3ST
Availability: InStock
Rating: 5 (108 reviews)

ISL9N327AD3ST

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Teilenummer	ISL9N327AD3ST
Hersteller	Fairchild Semiconductor
Beschreibung	N-CHANNEL POWER MOSFET
Datenblatt
Paket	-
ECAD
Auf Lager	0 piece(s)
Stückpreis	Request a Quote
Lieferzeit	Um bestätigt zu werden
Geschatte Leveringstijd	Jan 14 - Jan 19 (Kies voor snelle verzending)
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ISL9N327AD3ST Spezifikationen

Hersteller	Fairchild Semiconductor
Rubrik	Diskrete Halbleiterprodukte - Transistoren - FETs, MOSFET - Einzeln
Paket	-
ECAD
Serie	UltraFET®
FET Typ	N-Channel
Technologie	MOSFET (Metal Oxide)
Drain auf Source-Spannung (Vdss)	30 V
Strom - Dauerablass (Id) @ 25 ° C	20A (Tc)
Antriebsspannung (Max. Rds Ein, Min Rds Ein)	4.5V, 10V
Vgs (th) (Max) @ Id	3V @ 250µA
Gate Ladung (Qg) (Max) @ Vgs	26 nC @ 10 V
Eingangskapazität (Ciss) (Max) @ Vds	910 pF @ 15 V
Vgs (Max)	±20V
FET-Eigenschaft	-
Verlustleistung (Max)	50W (Ta)
Rds Ein (Max) @ Id, Vgs	27mOhm @ 20A, 10V
Betriebstemperatur	-55°C ~ 175°C (TJ)
Befestigungsart	Surface Mount
Lieferantengerätepaket	TO-252 (DPAK)
Paket / Fall	TO-252-3, DPAK (2 Leads + Tab), SC-63

ISL9N327AD3ST Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of ISL9N327AD3ST.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations
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ISL9N327AD3ST

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