Name: R6530ENZ4C13
Brand: Rohm Semiconductor
SKU: R6530ENZ4C13
Availability: InStock
Rating: 5 (84 reviews)

R6530ENZ4C13

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Teilenummer	R6530ENZ4C13
Hersteller	Rohm Semiconductor
Beschreibung	650V 30A TO-247, LOW-NOISE POWER
Datenblatt
Paket	-
ECAD
Auf Lager	1.458 piece(s)
Stückpreis	Request a Quote
Lieferzeit	Um bestätigt zu werden
Geschatte Leveringstijd	Jun 30 - Jul 5 (Kies voor snelle verzending)
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R6530ENZ4C13 Spezifikationen

Hersteller	Rohm Semiconductor
Rubrik	Diskrete Halbleiterprodukte - Transistoren - FETs, MOSFET - Einzeln
Paket	-
ECAD
Serie	-
FET Typ	N-Channel
Technologie	MOSFET (Metal Oxide)
Drain auf Source-Spannung (Vdss)	650 V
Strom - Dauerablass (Id) @ 25 ° C	30A (Tc)
Antriebsspannung (Max. Rds Ein, Min Rds Ein)	10V
Vgs (th) (Max) @ Id	4V @ 960µA
Gate Ladung (Qg) (Max) @ Vgs	90 nC @ 10 V
Eingangskapazität (Ciss) (Max) @ Vds	2100 pF @ 25 V
Vgs (Max)	±20V
FET-Eigenschaft	-
Verlustleistung (Max)	305W (Tc)
Rds Ein (Max) @ Id, Vgs	140mOhm @ 14.5A, 10V
Betriebstemperatur	150°C (TJ)
Befestigungsart	Through Hole
Lieferantengerätepaket	TO-247G
Paket / Fall	TO-247-3

R6530ENZ4C13 Packaging

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6. What is the process for return or replacement of R6530ENZ4C13?

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of R6530ENZ4C13.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations
7.How to contact us to get technical supports, such as R6530ENZ4C13 pin diagram, R6530ENZ4C13 datasheet?

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R6530ENZ4C13

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