Page 123 - Dioden - Gleichrichter - Einzeln | Diskrete Halbleiterprodukte

Teilenummer	Hersteller	Beschreibung	Paket	Lager	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
CR3F-040 BK	Central Semiconductor Corp	DIODE GEN PURP 400V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 65pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 125°C	Paket: DO-201AD, Axial	Lager7.808	400V	3A	1.2V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	65pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
MBRH24035R	GeneSiC Semiconductor	DIODE SCHOTTKY 35V 240A D67 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 240A Voltage - Forward (Vf) (Max) @ If: 720mV @ 240A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 35V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -55°C ~ 150°C	Paket: D-67	Lager5.904	35V	240A	720mV @ 240A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 35V	-	Chassis Mount	D-67	D-67	-55°C ~ 150°C
GI1-1400GPHE3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.4KV 1A DO204AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5µs Current - Reverse Leakage @ Vr: 10µA @ 1400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C	Paket: DO-204AC, DO-15, Axial	Lager6.480	1400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 1400V	-	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-65°C ~ 175°C
10ETF10STRL	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 10A D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.33V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 310ns Current - Reverse Leakage @ Vr: 100µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -40°C ~ 150°C	Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Lager2.080	1000V	10A	1.33V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	310ns	100µA @ 1000V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-40°C ~ 150°C
R7S00608XX	Powerex Inc.	DIODE MODULE 600V 800A DO200AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 800A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 1500A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 10µs Current - Reverse Leakage @ Vr: 50mA @ 600V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AA, A-PUK Supplier Device Package: DO-200AA, R62 Operating Temperature - Junction: -	Paket: DO-200AA, A-PUK	Lager5.968	600V	800A	1.8V @ 1500A	Standard Recovery >500ns, > 200mA (Io)	10µs	50mA @ 600V	-	Chassis Mount	DO-200AA, A-PUK	DO-200AA, R62	-
RD0506T-TL-H	ON Semiconductor	DIODE GEN PURP 600V 5A TPFA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TP-FA Operating Temperature - Junction: 150°C (Max)	Paket: TO-252-3, DPak (2 Leads + Tab), SC-63	Lager4.480	600V	5A	1.6V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	50µA @ 600V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TP-FA	150°C (Max)
ES3G M6G	TSC America Inc.	DIODE, SUPER FAST, 3A, 400V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	Paket: DO-214AB, SMC	Lager3.248	400V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	30pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
ESH2DHE3_A/I	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 2A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 930mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 2µA @ 200V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 175°C	Paket: DO-214AA, SMB	Lager3.248	200V	2A	930mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	2µA @ 200V	30pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 175°C
1N4006TA	SMC Diode Solutions	DIODE GEN PURP 800V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 125°C	Paket: DO-204AL, DO-41, Axial	Lager2.048	800V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 125°C
RL103FTA	SMC Diode Solutions	DIODE GEN PURP 200V 1A A-405 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: A-405 Operating Temperature - Junction: -65°C ~ 150°C	Paket: Axial	Lager6.368	200V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	15pF @ 4V, 1MHz	Through Hole	Axial	A-405	-65°C ~ 150°C
RB162LAM-60TR	Rohm Semiconductor	DIODE SCHOTTKY 60V 1A PMDTM Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 650mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: PMDTM Operating Temperature - Junction: 150°C (Max)	Paket: SOD-128	Lager5.760	60V	1A	650mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 60V	-	Surface Mount	SOD-128	PMDTM	150°C (Max)
JANTX1N3671A	Microsemi Corporation	DIODE GEN PURP 800V 12A DO203AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 2.3V @ 240A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA Operating Temperature - Junction: -65°C ~ 150°C	Paket: DO-203AA, DO-4, Stud	Lager6.640	800V	12A	2.3V @ 240A	Fast Recovery =< 500ns, > 200mA (Io)	-	5µA @ 800V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-203AA	-65°C ~ 150°C
ACGRBT303-HF	Comchip Technology	DIODE GEN PURP 600V 3A 2114 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 23pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: 2114/DO-214AA Operating Temperature - Junction: -65°C ~ 175°C	Paket: 2-SMD, No Lead	Lager5.248	600V	3A	1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	5µA @ 600V	23pF @ 4V, 1MHz	Surface Mount	2-SMD, No Lead	2114/DO-214AA	-65°C ~ 175°C
SB2100E-G	Comchip Technology	DIODE SCHOTTKY 100V 2A DO15 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 850mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -65°C ~ 150°C	Paket: DO-204AC, DO-15, Axial	Lager4.256	100V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 100V	-	Through Hole	DO-204AC, DO-15, Axial	DO-15	-65°C ~ 150°C
RURG8050	Harris Corporation	DIODE AVALANCHE 500V 80A TO247-2 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 500 V Current - Average Rectified (Io): 80A Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 80 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 85 ns Current - Reverse Leakage @ Vr: 500 µA @ 500 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -65°C ~ 175°C	Paket: -	Request a Quote	500 V	80A	1.6 V @ 80 A	Fast Recovery =< 500ns, > 200mA (Io)	85 ns	500 µA @ 500 V	-	Through Hole	TO-247-2	TO-247-2	-65°C ~ 175°C
NTE5881	NTE Electronics, Inc	DIODE GEN PURP 500V 12A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 500 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 38 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 12 mA @ 500 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 175°C	Paket: -	Request a Quote	500 V	12A	1.26 V @ 38 A	Standard Recovery >500ns, > 200mA (Io)	-	12 mA @ 500 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 175°C
1N2273R	Solid State Inc.	DIODE GEN PURP REV 100V 40A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 200°C	Paket: -	Request a Quote	100 V	40A	1.19 V @ 90 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 100 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 200°C
R307060F	Microchip Technology	STD RECTIFIER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
VSSAF3L63HM3-H	Vishay General Semiconductor - Diodes Division	3A, 60V SLIMSMA TRENCH SKY RECT. Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 2.5A Voltage - Forward (Vf) (Max) @ If: 540 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 70 µA @ 60 V Capacitance @ Vr, F: 680pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: DO-221AC (SlimSMA) Operating Temperature - Junction: -40°C ~ 150°C	Paket: -	Lager21.000	60 V	2.5A	540 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	70 µA @ 60 V	680pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	DO-221AC (SlimSMA)	-40°C ~ 150°C
S3540	Microchip Technology	DIODE GEN PURP 400V DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 µs Current - Reverse Leakage @ Vr: 25 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -65°C ~ 200°C	Paket: -	Request a Quote	400 V	70A	1.25 V @ 200 A	Standard Recovery >500ns, > 200mA (Io)	5 µs	25 µA @ 400 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5 (DO-203AB)	-65°C ~ 200°C
RB501VM-40FHTE-17	Rohm Semiconductor	DIODE SCHOTTKY 40V 100MA UMD2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 30 µA @ 10 V Capacitance @ Vr, F: 6pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: UMD2 Operating Temperature - Junction: 125°C (Max)	Paket: -	Request a Quote	40 V	100mA	550 mV @ 100 mA	Small Signal =< 200mA (Io), Any Speed	-	30 µA @ 10 V	6pF @ 10V, 1MHz	Surface Mount	SC-90, SOD-323F	UMD2	125°C (Max)
JANHCB2N5415	Microchip Technology	BJT TRANSISTOR Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
HSL226KRF-E	Renesas Electronics Corporation	DIODE SCHOTTKY 25V 50MA 2EFP Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 25 V Current - Average Rectified (Io): 50mA Voltage - Forward (Vf) (Max) @ If: 380 mV @ 5 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 450 nA @ 20 V Capacitance @ Vr, F: 2.8pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: 2-EFP Operating Temperature - Junction: 125°C (Max)	Paket: -	Request a Quote	25 V	50mA	380 mV @ 5 mA	Small Signal =< 200mA (Io), Any Speed	-	450 nA @ 20 V	2.8pF @ 1V, 1MHz	Surface Mount	2-SMD, Flat Lead	2-EFP	125°C (Max)
SS36-V7G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 3A 60V DO-214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	Paket: -	Request a Quote	60 V	3A	750 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 60 V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
PMEG2020EJ-ZL-115	Nexperia USA Inc.	NEXPERIA PMEG2020EJ - RECTIFIER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
RS5G-T	Taiwan Semiconductor Corporation	150NS, 5A, 400V, FAST RECOVERY R Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: 57pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	Paket: -	Lager8.985	400 V	5A	1.3 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	10 µA @ 400 V	57pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
PMEG100T30ELRX	Nexperia USA Inc.	DIODE SCHOTTKY 100V 3A SOD123W Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 12.5 ns Current - Reverse Leakage @ Vr: 1.75 µA @ 100 V Capacitance @ Vr, F: 310pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: 175°C	Paket: -	Lager9.000	100 V	3A	800 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	12.5 ns	1.75 µA @ 100 V	310pF @ 1V, 1MHz	Surface Mount	SOD-123W	SOD-123W	175°C
R1800-TP	Micro Commercial Co	DIODE GEN PURP 1.8KV 500MA DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1800 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 2 V @ 500 mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 1800 V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 150°C	Paket: -	Request a Quote	1800 V	500mA	2 V @ 500 mA	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 1800 V	30pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 150°C
WNSC2D10650XQ	WeEn Semiconductors	DIODE SIL CARB 650V 10A TO220F Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 50 µA @ 650 V Capacitance @ Vr, F: 310pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: TO-220F Operating Temperature - Junction: 175°C	Paket: -	Request a Quote	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	310pF @ 1V, 1MHz	Through Hole	TO-220-2 Full Pack, Isolated Tab	TO-220F	175°C
GF3045PS-S1	SMC Diode Solutions	PLANAR SCHOTTKY MODULE 45V 30A G Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Paket: -	Lager180	-	-	-	-	-	-	-	-	-	-	-

CR3F-040 BK

Central Semiconductor Corp

DIODE GEN PURP 400V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C

Paket: DO-201AD, Axial

Lager7.808

400V

3A

1.2V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 400V

65pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 125°C

MBRH24035R

GeneSiC Semiconductor

DIODE SCHOTTKY 35V 240A D67

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 240A
Voltage - Forward (Vf) (Max) @ If: 720mV @ 240A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 35V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C

Paket: D-67

Lager5.904

35V

240A

720mV @ 240A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 35V

-

Chassis Mount

D-67

-55°C ~ 150°C

GI1-1400GPHE3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.4KV 1A DO204AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5µs
Current - Reverse Leakage @ Vr: 10µA @ 1400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C

Paket: DO-204AC, DO-15, Axial

Lager6.480

1400V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

1.5µs

10µA @ 1400V

-

Through Hole

DO-204AC, DO-15, Axial

DO-204AC (DO-15)

-65°C ~ 175°C

10ETF10STRL

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 10A D2PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.33V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 310ns
Current - Reverse Leakage @ Vr: 100µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C

Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Lager2.080

1000V

10A

1.33V @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

310ns

100µA @ 1000V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB (D2PAK)

-40°C ~ 150°C

R7S00608XX

Powerex Inc.

DIODE MODULE 600V 800A DO200AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 800A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 1500A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10µs
Current - Reverse Leakage @ Vr: 50mA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AA, A-PUK
Supplier Device Package: DO-200AA, R62
Operating Temperature - Junction: -

Paket: DO-200AA, A-PUK

Lager5.968

600V

800A

1.8V @ 1500A

Standard Recovery >500ns, > 200mA (Io)

10µs

50mA @ 600V

-

Chassis Mount

DO-200AA, A-PUK

DO-200AA, R62

-

RD0506T-TL-H

ON Semiconductor

DIODE GEN PURP 600V 5A TPFA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TP-FA
Operating Temperature - Junction: 150°C (Max)

Paket: TO-252-3, DPak (2 Leads + Tab), SC-63

Lager4.480

600V

5A

1.6V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

50µA @ 600V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

TP-FA

150°C (Max)

ES3G M6G

TSC America Inc.

DIODE, SUPER FAST, 3A, 400V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

Paket: DO-214AB, SMC

Lager3.248

400V

3A

1.3V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 400V

30pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 150°C

ESH2DHE3_A/I

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 2A DO214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 930mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 2µA @ 200V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C

Paket: DO-214AA, SMB

Lager3.248

200V

2A

930mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

2µA @ 200V

30pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 175°C

1N4006TA

SMC Diode Solutions

DIODE GEN PURP 800V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 125°C

Paket: DO-204AL, DO-41, Axial

Lager2.048

800V

1A

1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 800V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 125°C

RL103FTA

SMC Diode Solutions

DIODE GEN PURP 200V 1A A-405

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: A-405
Operating Temperature - Junction: -65°C ~ 150°C

Paket: Axial

Lager6.368

200V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 200V

15pF @ 4V, 1MHz

Through Hole

Axial

A-405

-65°C ~ 150°C

RB162LAM-60TR

Rohm Semiconductor

DIODE SCHOTTKY 60V 1A PMDTM

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 650mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C (Max)

Paket: SOD-128

Lager5.760

60V

1A

650mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 60V

-

Surface Mount

SOD-128

PMDTM

150°C (Max)

JANTX1N3671A

Microsemi Corporation

DIODE GEN PURP 800V 12A DO203AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 2.3V @ 240A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA
Operating Temperature - Junction: -65°C ~ 150°C

Paket: DO-203AA, DO-4, Stud

Lager6.640

800V

12A

2.3V @ 240A

Fast Recovery =< 500ns, > 200mA (Io)

-

5µA @ 800V

-

Stud Mount

DO-203AA, DO-4, Stud

DO-203AA

-65°C ~ 150°C

ACGRBT303-HF

Comchip Technology

DIODE GEN PURP 600V 3A 2114

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 23pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Supplier Device Package: 2114/DO-214AA
Operating Temperature - Junction: -65°C ~ 175°C

Paket: 2-SMD, No Lead

Lager5.248

600V

3A

1V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

5µA @ 600V

23pF @ 4V, 1MHz

Surface Mount

2-SMD, No Lead

2114/DO-214AA

-65°C ~ 175°C

SB2100E-G

Comchip Technology

DIODE SCHOTTKY 100V 2A DO15

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 850mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C

Paket: DO-204AC, DO-15, Axial

Lager4.256

100V

2A

850mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 100V

-

Through Hole

DO-204AC, DO-15, Axial

DO-15

-65°C ~ 150°C

RURG8050

Harris Corporation

DIODE AVALANCHE 500V 80A TO247-2

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 500 V
Current - Average Rectified (Io): 80A
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 80 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Current - Reverse Leakage @ Vr: 500 µA @ 500 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -65°C ~ 175°C

Paket: -

Request a Quote

500 V

80A

1.6 V @ 80 A

Fast Recovery =< 500ns, > 200mA (Io)

85 ns

500 µA @ 500 V

-

Through Hole

TO-247-2

-65°C ~ 175°C

NTE5881

NTE Electronics, Inc

DIODE GEN PURP 500V 12A DO4

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 500 V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 38 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 12 mA @ 500 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 175°C

Paket: -

Request a Quote

500 V

12A

1.26 V @ 38 A

Standard Recovery >500ns, > 200mA (Io)

-

12 mA @ 500 V

-

Stud Mount

DO-203AA, DO-4, Stud

DO-4

-65°C ~ 175°C

1N2273R

Solid State Inc.

DIODE GEN PURP REV 100V 40A DO5

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C

Paket: -

Request a Quote

100 V

40A

1.19 V @ 90 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 100 V

-

Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 200°C

R307060F

Microchip Technology

STD RECTIFIER

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

Paket: -

Request a Quote

-

VSSAF3L63HM3-H

Vishay General Semiconductor - Diodes Division

3A, 60V SLIMSMA TRENCH SKY RECT.

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 2.5A
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 70 µA @ 60 V
Capacitance @ Vr, F: 680pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 150°C

Paket: -

Lager21.000

60 V

2.5A

540 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

70 µA @ 60 V

680pF @ 4V, 1MHz

Surface Mount

DO-221AC, SMA Flat Leads

DO-221AC (SlimSMA)

-40°C ~ 150°C

S3540

Microchip Technology

DIODE GEN PURP 400V DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 70A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C

Paket: -

Request a Quote

400 V

70A

1.25 V @ 200 A

Standard Recovery >500ns, > 200mA (Io)

5 µs

25 µA @ 400 V

-

Stud Mount

DO-203AB, DO-5, Stud

DO-5 (DO-203AB)

-65°C ~ 200°C

RB501VM-40FHTE-17

Rohm Semiconductor

DIODE SCHOTTKY 40V 100MA UMD2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Supplier Device Package: UMD2
Operating Temperature - Junction: 125°C (Max)

Paket: -

Request a Quote

40 V

100mA

550 mV @ 100 mA

Small Signal =< 200mA (Io), Any Speed

-

30 µA @ 10 V

6pF @ 10V, 1MHz

Surface Mount

SC-90, SOD-323F

UMD2

125°C (Max)

JANHCB2N5415

Microchip Technology

BJT TRANSISTOR

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

Paket: -

Request a Quote

-

HSL226KRF-E

Renesas Electronics Corporation

DIODE SCHOTTKY 25V 50MA 2EFP

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 25 V
Current - Average Rectified (Io): 50mA
Voltage - Forward (Vf) (Max) @ If: 380 mV @ 5 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 450 nA @ 20 V
Capacitance @ Vr, F: 2.8pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: 2-EFP
Operating Temperature - Junction: 125°C (Max)

Paket: -

Request a Quote

25 V

50mA

380 mV @ 5 mA

Small Signal =< 200mA (Io), Any Speed

-

450 nA @ 20 V

2.8pF @ 1V, 1MHz

Surface Mount

2-SMD, Flat Lead

2-EFP

125°C (Max)

SS36-V7G

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 3A 60V DO-214AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

Paket: -

Request a Quote

60 V

3A

750 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 60 V

-

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C

PMEG2020EJ-ZL-115

Nexperia USA Inc.

NEXPERIA PMEG2020EJ - RECTIFIER

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

Paket: -

Request a Quote

-

RS5G-T

Taiwan Semiconductor Corporation

150NS, 5A, 400V, FAST RECOVERY R

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Capacitance @ Vr, F: 57pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

Paket: -

Lager8.985

400 V

5A

1.3 V @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

150 ns

10 µA @ 400 V

57pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C

PMEG100T30ELRX

Nexperia USA Inc.

DIODE SCHOTTKY 100V 3A SOD123W

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12.5 ns
Current - Reverse Leakage @ Vr: 1.75 µA @ 100 V
Capacitance @ Vr, F: 310pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C

Paket: -

Lager9.000

100 V

3A

800 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

12.5 ns

1.75 µA @ 100 V

310pF @ 1V, 1MHz

Surface Mount

SOD-123W

175°C

R1800-TP

Micro Commercial Co

DIODE GEN PURP 1.8KV 500MA DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1800 V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 2 V @ 500 mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 1800 V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C

Paket: -

Request a Quote

1800 V

500mA

2 V @ 500 mA

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 1800 V

30pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-55°C ~ 150°C

WNSC2D10650XQ

WeEn Semiconductors

DIODE SIL CARB 650V 10A TO220F

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Capacitance @ Vr, F: 310pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Supplier Device Package: TO-220F
Operating Temperature - Junction: 175°C

Paket: -

Request a Quote

650 V

10A

1.7 V @ 10 A

No Recovery Time > 500mA (Io)

0 ns

50 µA @ 650 V

310pF @ 1V, 1MHz

Through Hole

TO-220-2 Full Pack, Isolated Tab

TO-220F

175°C

GF3045PS-S1

SMC Diode Solutions

PLANAR SCHOTTKY MODULE 45V 30A G

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

Paket: -

Lager180

-