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Dioden - Gleichrichter - Einzeln

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Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
JANTX1N6510
Microsemi Corporation

DIODE GEN PURP 75V 300MA DO213

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75V
  • Current - Average Rectified (Io): 300mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 300mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 10ns
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 16-CFlatPack
  • Supplier Device Package: 16-Flatpack
  • Operating Temperature - Junction: -
Paket: 16-CFlatPack
Lager2.544
75V
300mA
1V @ 300mA
Fast Recovery =< 500ns, > 200mA (Io)
10ns
-
-
Surface Mount
16-CFlatPack
16-Flatpack
-
CDLL0.2A20
Microsemi Corporation

DIODE SCHOTTKY 20V 200MA DO213AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 200mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 20V
  • Capacitance @ Vr, F: 50pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AA
  • Supplier Device Package: DO-213AA
  • Operating Temperature - Junction: -65°C ~ 125°C
Paket: DO-213AA
Lager3.280
20V
200mA
500mV @ 200mA
Small Signal =< 200mA (Io), Any Speed
-
5µA @ 20V
50pF @ 0V, 1MHz
Surface Mount
DO-213AA
DO-213AA
-65°C ~ 125°C
VS-30WQ03FNTRLPBF
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 3.5A DPAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 3.5A
  • Voltage - Forward (Vf) (Max) @ If: 450mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2mA @ 30V
  • Capacitance @ Vr, F: 290pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-PAK (TO-252AA)
  • Operating Temperature - Junction: -40°C ~ 150°C
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63
Lager7.872
30V
3.5A
450mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
2mA @ 30V
290pF @ 5V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
-40°C ~ 150°C
RDS82280XX
Powerex Inc.

DIODE MODULE 2.2KV 8000A DO200AE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2200V
  • Current - Average Rectified (Io): 8000A
  • Voltage - Forward (Vf) (Max) @ If: 820mV @ 4000A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25µs
  • Current - Reverse Leakage @ Vr: 300mA @ 2200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AE
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
Paket: DO-200AE
Lager6.800
2200V
8000A
820mV @ 4000A
Standard Recovery >500ns, > 200mA (Io)
25µs
300mA @ 2200V
-
Chassis Mount
DO-200AE
-
-
JANTX1N6628US
Microsemi Corporation

DIODE GEN PURP 660V 1.75A D5B

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 660V
  • Current - Average Rectified (Io): 1.75A
  • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 2µA @ 660V
  • Capacitance @ Vr, F: 40pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, E
  • Supplier Device Package: D-5B
  • Operating Temperature - Junction: -65°C ~ 150°C
Paket: SQ-MELF, E
Lager7.376
660V
1.75A
1.35V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
2µA @ 660V
40pF @ 10V, 1MHz
Surface Mount
SQ-MELF, E
D-5B
-65°C ~ 150°C
MBR6040
GeneSiC Semiconductor

DIODE SCHOTTKY 40V 60A DO5

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 650mV @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5mA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5
  • Operating Temperature - Junction: -65°C ~ 150°C
Paket: DO-203AB, DO-5, Stud
Lager4.288
40V
60A
650mV @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
-
5mA @ 20V
-
Chassis, Stud Mount
DO-203AB, DO-5, Stud
DO-5
-65°C ~ 150°C
1N5187US
Microsemi Corporation

DIODE GEN PURP 200V 3A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 200ns
  • Current - Reverse Leakage @ Vr: 2µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: B, Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: B, Axial
Lager4.128
200V
3A
1.5V @ 9A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
2µA @ 200V
-
Through Hole
B, Axial
-
-65°C ~ 175°C
UFS530J/TR13
Microsemi Corporation

DIODE GEN PURP 300V 5A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 10µA @ 300V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: DO-214AB, SMC
Lager4.256
300V
5A
1.2V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 300V
-
Surface Mount
DO-214AB, SMC
DO-214AB
-55°C ~ 175°C
SURD8330T4G-VF01
ON Semiconductor

DIODE GEN PURP 300V 3A DPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 300V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK-3
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63
Lager3.792
300V
3A
1.15V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 300V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK-3
-65°C ~ 175°C
UGF8DTHE3/45
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 8A ITO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack, Isolated Tab
  • Supplier Device Package: ITO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: TO-220-2 Full Pack, Isolated Tab
Lager4.208
200V
8A
1V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
10µA @ 200V
-
Through Hole
TO-220-2 Full Pack, Isolated Tab
ITO-220AC
-55°C ~ 150°C
STPS3045DJFY-TR
STMicroelectronics

AUTOMOTIVE POWER SCHOTTKY RECTIF

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 680mV @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 300µA @ 45V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerFlat? (5x6)
  • Operating Temperature - Junction: -40°C ~ 175°C
Paket: 8-PowerVDFN
Lager5.520
45V
30A
680mV @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
-
300µA @ 45V
-
Surface Mount
8-PowerVDFN
PowerFlat? (5x6)
-40°C ~ 175°C
DSS2-60AT2
IXYS

DIODE SCHOTTKY 60V 2A TO92-3

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
  • Operating Temperature - Junction: -40°C ~ 175°C
Paket: TO-226-3, TO-92-3 (TO-226AA)
Lager6.528
60V
2A
-
Fast Recovery =< 500ns, > 200mA (Io)
-
-
-
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
-40°C ~ 175°C
VS-6EWH06FNTRHM3
Vishay Semiconductor Diodes Division

DIODE HYPERFAST 600V 6A DPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 2.1V @ 6A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-PAK (TO-252AA)
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63
Lager3.632
600V
6A
2.1V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
50µA @ 600V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
-65°C ~ 175°C
1N5407GHA0G
TSC America Inc.

DIODE, 3A, 800V, AEC-Q101, DO-20

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Capacitance @ Vr, F: 25pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: DO-201AD, Axial
Lager7.760
800V
3A
1V @ 3A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 800V
25pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
FR155GHB0G
TSC America Inc.

DIODE, FAST, 1.5A, 600V, 250NS,

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-204AC (DO-15)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: DO-204AC, DO-15, Axial
Lager5.136
600V
1.5A
1.3V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
SD103AWS-HE3-18
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 350MA 40V SOD323

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 350mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 10ns
  • Current - Reverse Leakage @ Vr: 5µA @ 30V
  • Capacitance @ Vr, F: 50pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: SOD-323
  • Operating Temperature - Junction: -55°C ~ 125°C
Paket: SC-76, SOD-323
Lager5.072
40V
350mA (DC)
600mV @ 200mA
Fast Recovery =< 500ns, > 200mA (Io)
10ns
5µA @ 30V
50pF @ 0V, 1MHz
Surface Mount
SC-76, SOD-323
SOD-323
-55°C ~ 125°C
F1T2G A0G
TSC America Inc.

DIODE, FAST, 1A, 100V, 150NS, TS

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: T-18, Axial
  • Supplier Device Package: TS-1
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: T-18, Axial
Lager3.648
100V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
15pF @ 4V, 1MHz
Through Hole
T-18, Axial
TS-1
-55°C ~ 150°C
CDSW3004-HF
Comchip Technology

DIODE GEN PURP 300V 225MA SOD123

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io): 225mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 100nA @ 240V
  • Capacitance @ Vr, F: 5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
  • Operating Temperature - Junction: -65°C ~ 150°C
Paket: SOD-123
Lager29.814
300V
225mA
1.25V @ 200mA
Standard Recovery >500ns, > 200mA (Io)
50ns
100nA @ 240V
5pF @ 0V, 1MHz
Surface Mount
SOD-123
SOD-123
-65°C ~ 150°C
RF501BM2STL
Rohm Semiconductor

DIODE GEN PURP 200V 5A TO252

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 920mV @ 5A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 1µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252
  • Operating Temperature - Junction: 150°C (Max)
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63
Lager4.912
200V
5A
920mV @ 5A
Standard Recovery >500ns, > 200mA (Io)
25ns
1µA @ 200V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252
150°C (Max)
CLLSH1-60-TR
Central Semiconductor Corp

DIODE SCHOTTKY 60V 1A SMA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 60 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA
  • Operating Temperature - Junction: -
Paket: -
Request a Quote
60 V
1A
700 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 60 V
-
Surface Mount
DO-214AC, SMA
SMA
-
UES1106HR2
Microchip Technology

DIODE GEN PURP 400V 2A A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: A, Axial
  • Supplier Device Package: A, Axial
  • Operating Temperature - Junction: -
Paket: -
Request a Quote
400 V
2A
1.25 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
-
-
Through Hole
A, Axial
A, Axial
-
SRAF8150H
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 150V 8A ITO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 150 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: ITO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: -
Request a Quote
150 V
8A
550 mV @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 150 V
-
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 150°C
AU1FK-M3-H
Vishay General Semiconductor - Diodes Division

DIODE AVALANCHE 800V 1A DO219AB

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 800 V
  • Capacitance @ Vr, F: 8.2pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: DO-219AB (SMF)
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: -
Lager53.400
800 V
1A
1.85 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
75 ns
1 µA @ 800 V
8.2pF @ 4V, 1MHz
Surface Mount
DO-219AB
DO-219AB (SMF)
-55°C ~ 175°C
RB088LAM100TR
Rohm Semiconductor

DIODE SCHOTTKY 100V 5A PMDTM

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 3 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: PMDTM
  • Operating Temperature - Junction: 150°C
Paket: -
Lager7.983
100 V
5A
870 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
3 µA @ 100 V
-
Surface Mount
SOD-128
PMDTM
150°C
ND171N16KHPSA2
Infineon Technologies

DIODE GEN PURP 1.6KV 171A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io): 171A
  • Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 mA @ 1600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
  • Operating Temperature - Junction: 150°C
Paket: -
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1600 V
171A
1.26 V @ 500 A
Standard Recovery >500ns, > 200mA (Io)
-
20 mA @ 1600 V
-
Chassis Mount
Module
-
150°C
MSASC25W100KV
Microchip Technology

DIODE SCHOTTKY 100V 25A THINKEY2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 910 mV @ 25 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: ThinKey™2
  • Supplier Device Package: ThinKey™2
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: -
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100 V
25A
910 mV @ 25 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 100 V
-
Surface Mount
ThinKey™2
ThinKey™2
-65°C ~ 175°C
VSSAF5M103-M3-H
Vishay

5A, 100V, SLIM SMA TRENCH SKY RE

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 2.4A
  • Voltage - Forward (Vf) (Max) @ If: 730 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 140 µA @ 100 V
  • Capacitance @ Vr, F: 570pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: DO-221AC (SlimSMA)
  • Operating Temperature - Junction: -40°C ~ 175°C
Paket: -
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100 V
2.4A
730 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
140 µA @ 100 V
570pF @ 4V, 1MHz
Surface Mount
DO-221AC, SMA Flat Leads
DO-221AC (SlimSMA)
-40°C ~ 175°C
PG600M_R2_00001
Panjit International Inc.

DIODE GEN PURP 1KV 6A P600

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
  • Capacitance @ Vr, F: 150pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: P600, Axial
  • Supplier Device Package: P600
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: -
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1000 V
6A
1 V @ 6 A
Standard Recovery >500ns, > 200mA (Io)
-
1 µA @ 1000 V
150pF @ 4V, 1MHz
Through Hole
P600, Axial
P600
-55°C ~ 150°C
MURB2J_R1_00001
Panjit International Inc.

DIODE GEN PURP 600V 2A SMB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB (DO-214AA)
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: -
Lager4.731
600 V
2A
1.35 V @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
5 µA @ 600 V
-
Surface Mount
DO-214AA, SMB
SMB (DO-214AA)
-55°C ~ 175°C
V2FM12-M3-I
Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 120V 2A DO219AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 120 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 960 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 65 µA @ 120 V
  • Capacitance @ Vr, F: 130pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: DO-219AB (SMF)
  • Operating Temperature - Junction: -40°C ~ 175°C
Paket: -
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120 V
2A
960 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
65 µA @ 120 V
130pF @ 4V, 1MHz
Surface Mount
DO-219AB
DO-219AB (SMF)
-40°C ~ 175°C