Page 483 - Dioden - Gleichrichter - Einzeln | Diskrete Halbleiterprodukte

Teilenummer	Hersteller	Beschreibung	Paket	Lager	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
NUR460/L04,112	NXP	DIODE GEN PURP 600V 4A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.28V @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 65ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: 150°C (Max)	Paket: DO-201AD, Axial	Lager4.368	600V	4A	1.28V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	65ns	50µA @ 600V	-	Through Hole	DO-201AD, Axial	DO-201AD	150°C (Max)
GP30GEHE3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5µs Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C	Paket: DO-201AD, Axial	Lager2.496	400V	3A	1.1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	5µs	5µA @ 400V	-	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 175°C
ESH1PDHE3/85A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 1A DO220AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 900mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 1µA @ 200V Capacitance @ Vr, F: 25pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 175°C	Paket: DO-220AA	Lager2.528	200V	1A	900mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 200V	25pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 175°C
BY520-16EHE3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.6KV 500MA DO204 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	Paket: DO-204AL, DO-41, Axial	Lager6.480	1600V	500mA	-	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
FFPF10H60STU	Fairchild/ON Semiconductor	DIODE GEN PURP 600V 10A TO220F Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 2.5V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40ns Current - Reverse Leakage @ Vr: 1mA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220F-2L Operating Temperature - Junction: -65°C ~ 150°C	Paket: TO-220-2 Full Pack	Lager4.912	600V	10A	2.5V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	40ns	1mA @ 600V	-	Through Hole	TO-220-2 Full Pack	TO-220F-2L	-65°C ~ 150°C
MURA205T3	ON Semiconductor	DIODE GEN PURP 50V 2A SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 940mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 2µA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 175°C	Paket: DO-214AC, SMA	Lager3.824	50V	2A	940mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	2µA @ 50V	-	Surface Mount	DO-214AC, SMA	SMA	-65°C ~ 175°C
VI20150SHM3/4W	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 20A 150V TO-262AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.43V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 250µA @ 150V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA Supplier Device Package: TO-262AA Operating Temperature - Junction: -55°C ~ 150°C	Paket: TO-262-3 Long Leads, I2Pak, TO-262AA	Lager6.400	150V	20A	1.43V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	250µA @ 150V	-	Through Hole	TO-262-3 Long Leads, I2Pak, TO-262AA	TO-262AA	-55°C ~ 150°C
AR3PMHM3_A/I	Vishay Semiconductor Diodes Division	DIODE AVALANCH 1KV 1.6A TO277A Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1.6A Voltage - Forward (Vf) (Max) @ If: 1.9V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 120ns Current - Reverse Leakage @ Vr: 10µA @ 800V Capacitance @ Vr, F: 34pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C	Paket: TO-277, 3-PowerDFN	Lager2.704	1000V	1.6A	1.9V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	120ns	10µA @ 800V	34pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
SF44G B0G	TSC America Inc.	DIODE, SUPER FAST, 4A, 200V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1V @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 100pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	Paket: DO-201AD, Axial	Lager2.464	200V	4A	1V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	100pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
S10G-TP	Micro Commercial Co	DIODE GEN PURP 400V 10A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	Paket: DO-214AB, SMC	Lager2.448	400V	10A	1.2V @ 10A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 400V	-	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
SS22HE3_A/H	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 20V 2A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 20V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	Paket: DO-214AA, SMB	Lager2.912	20V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 20V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
BYG20DHM3_A/H	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 200V 1.5A SMA Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 1µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	Paket: DO-214AC, SMA	Lager7.200	200V	1.5A	1.4V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	1µA @ 200V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
CD214B-B260LF	Bourns Inc.	DIODE SCHOTTKY 60V 2A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 60V Capacitance @ Vr, F: 200pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 125°C	Paket: DO-214AA, SMB	Lager6.416	60V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	200pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 125°C
SK110BHR5G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 850mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	Paket: DO-214AA, SMB	Lager5.168	100V	1A	850mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SD103CW-HE3-18	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 350MA 20V SOD123 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 350mA (DC) Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 10ns Current - Reverse Leakage @ Vr: 5µA @ 10V Capacitance @ Vr, F: 50pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 125°C	Paket: SOD-123	Lager4.288	20V	350mA (DC)	600mV @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	10ns	5µA @ 10V	50pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	-55°C ~ 125°C
CSA2J-E3/I	Vishay Semiconductor Diodes Division	DIODE GPP 2A 600V DO-214AC SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1.6A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.1µs Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 11pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	Paket: DO-214AC, SMA	Lager6.592	600V	1.6A	1.15V @ 2A	Standard Recovery >500ns, > 200mA (Io)	2.1µs	5µA @ 600V	11pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RURG80100	Fairchild/ON Semiconductor	DIODE GEN PURP 1KV 80A TO247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 80A Voltage - Forward (Vf) (Max) @ If: 1.9V @ 80A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 250µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -65°C ~ 175°C	Paket: TO-247-2	Lager5.488	1000V	80A	1.9V @ 80A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	250µA @ 1000V	-	Through Hole	TO-247-2	TO-247-2	-65°C ~ 175°C
UF4004-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: 17pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	Paket: DO-204AL, DO-41, Axial	Lager168.000	400V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
ES1C-13-F	Diodes Incorporated	DIODE GEN PURP 150V 1A SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 920mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 5µA @ 150V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -55°C ~ 150°C	Paket: DO-214AC, SMA	Lager1.236.420	150V	1A	920mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 150V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA	-55°C ~ 150°C
UF5400GP-TP	Micro Commercial Co	DIODE GEN PURP 50V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 10 µA @ 50 V Capacitance @ Vr, F: 75pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	Paket: -	Request a Quote	50 V	3A	950 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 50 V	75pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
FR307G	Taiwan Semiconductor Corporation	DIODE GEN PURP 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	Paket: -	Lager11.244	1000 V	3A	1.3 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	5 µA @ 1000 V	30pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
UES2604HR2	Microchip Technology	DIODE GEN PURP 30A TO3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-3 Operating Temperature - Junction: -55°C ~ 150°C	Paket: -	Request a Quote	-	30A	1.25 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	-	-	Through Hole	TO-204AA, TO-3	TO-3	-55°C ~ 150°C
DSC06C065FP	Diodes Incorporated	SILICON CARBIDE RECTIFIER ITO-22 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 170 µA @ 650 V Capacitance @ Vr, F: 191pF @ 100mV, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: ITO-220AC (Type WX) Operating Temperature - Junction: -55°C ~ 175°C	Paket: -	Lager150	650 V	6A	1.7 V @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	-	170 µA @ 650 V	191pF @ 100mV, 1MHz	Through Hole	TO-220-2 Full Pack, Isolated Tab	ITO-220AC (Type WX)	-55°C ~ 175°C
DMA30IM1600PZ-TRL	IXYS	DIODE GEN PURP 1.6KV 30A TO263HV Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40 µA @ 1600 V Capacitance @ Vr, F: 10pF @ 400V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263HV Operating Temperature - Junction: -55°C ~ 175°C	Paket: -	Request a Quote	1600 V	30A	1.29 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	40 µA @ 1600 V	10pF @ 400V, 1MHz	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263HV	-55°C ~ 175°C
NRTS1260PFST3G	onsemi	DIODE SCHOTTKY 60V 12A TO277-3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 660 mV @ 12 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 350 µA @ 60 V Capacitance @ Vr, F: 1180pf @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 175°C	Paket: -	Lager14.970	60 V	12A	660 mV @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	-	350 µA @ 60 V	1180pf @ 1V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277-3	-55°C ~ 175°C
SR509	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 5A DO201AD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 90 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	Paket: -	Request a Quote	90 V	5A	850 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 90 V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
NTE597	NTE Electronics, Inc	DIODE GEN PURP 200V 8A TO220-2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Current - Reverse Leakage @ Vr: 500 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -65°C ~ 175°C	Paket: -	Request a Quote	200 V	8A	1.3 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	500 µA @ 200 V	-	Through Hole	TO-220-2	TO-220-2	-65°C ~ 175°C
M1494NK250	IXYS	DIODE GEN PURP 2.5KV 1975A WD8 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2500 V Current - Average Rectified (Io): 1975A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1000 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3.9 µs Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Clamp On Package / Case: DO-200AB, B-PUK Supplier Device Package: WD8 Operating Temperature - Junction: -	Paket: -	Request a Quote	2500 V	1975A	1.15 V @ 1000 A	Standard Recovery >500ns, > 200mA (Io)	3.9 µs	-	-	Clamp On	DO-200AB, B-PUK	WD8	-

NUR460/L04,112

NXP

DIODE GEN PURP 600V 4A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.28V @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 150°C (Max)

Paket: DO-201AD, Axial

Lager4.368

600V

4A

1.28V @ 4A

Fast Recovery =< 500ns, > 200mA (Io)

65ns

50µA @ 600V

-

Through Hole

DO-201AD, Axial

DO-201AD

150°C (Max)

GP30GEHE3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5µs
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C

Paket: DO-201AD, Axial

Lager2.496

400V

3A

1.1V @ 3A

Standard Recovery >500ns, > 200mA (Io)

5µs

5µA @ 400V

-

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 175°C

ESH1PDHE3/85A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A DO220AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 1µA @ 200V
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C

Paket: DO-220AA

Lager2.528

200V

1A

900mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

1µA @ 200V

25pF @ 4V, 1MHz

Surface Mount

DO-220AA

DO-220AA (SMP)

-55°C ~ 175°C

BY520-16EHE3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.6KV 500MA DO204

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

Paket: DO-204AL, DO-41, Axial

Lager6.480

1600V

500mA

-

Standard Recovery >500ns, > 200mA (Io)

-

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

FFPF10H60STU

Fairchild/ON Semiconductor

DIODE GEN PURP 600V 10A TO220F

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 2.5V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40ns
Current - Reverse Leakage @ Vr: 1mA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -65°C ~ 150°C

Paket: TO-220-2 Full Pack

Lager4.912

600V

10A

2.5V @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

40ns

1mA @ 600V

-

Through Hole

TO-220-2 Full Pack

TO-220F-2L

-65°C ~ 150°C

MURA205T3

ON Semiconductor

DIODE GEN PURP 50V 2A SMA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 940mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 2µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 175°C

Paket: DO-214AC, SMA

Lager3.824

50V

2A

940mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

2µA @ 50V

-

Surface Mount

DO-214AC, SMA

SMA

-65°C ~ 175°C

VI20150SHM3/4W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20A 150V TO-262AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.43V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 250µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package: TO-262AA
Operating Temperature - Junction: -55°C ~ 150°C

Paket: TO-262-3 Long Leads, I2Pak, TO-262AA

Lager6.400

150V

20A

1.43V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

-

250µA @ 150V

-

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

TO-262AA

-55°C ~ 150°C

AR3PMHM3_A/I

Vishay Semiconductor Diodes Division

DIODE AVALANCH 1KV 1.6A TO277A

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1.6A
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120ns
Current - Reverse Leakage @ Vr: 10µA @ 800V
Capacitance @ Vr, F: 34pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C

Paket: TO-277, 3-PowerDFN

Lager2.704

1000V

1.6A

1.9V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

120ns

10µA @ 800V

34pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 175°C

SF44G B0G

TSC America Inc.

DIODE, SUPER FAST, 4A, 200V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

Paket: DO-201AD, Axial

Lager2.464

200V

4A

1V @ 4A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 200V

100pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

S10G-TP

Micro Commercial Co

DIODE GEN PURP 400V 10A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

Paket: DO-214AB, SMC

Lager2.448

400V

10A

1.2V @ 10A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 400V

-

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 150°C

SS22HE3_A/H

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20V 2A DO214AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400µA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

Paket: DO-214AA, SMB

Lager2.912

20V

2A

500mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

400µA @ 20V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

BYG20DHM3_A/H

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 1.5A SMA

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 1µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

Paket: DO-214AC, SMA

Lager7.200

200V

1.5A

1.4V @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

1µA @ 200V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

CD214B-B260LF

Bourns Inc.

DIODE SCHOTTKY 60V 2A DO214AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 60V
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C

Paket: DO-214AA, SMB

Lager6.416

60V

2A

700mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 60V

200pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 125°C

SK110BHR5G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 1

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 850mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

Paket: DO-214AA, SMB

Lager5.168

100V

1A

850mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 100V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

SD103CW-HE3-18

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 350MA 20V SOD123

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 350mA (DC)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10ns
Current - Reverse Leakage @ Vr: 5µA @ 10V
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C

Paket: SOD-123

Lager4.288

20V

350mA (DC)

600mV @ 200mA

Fast Recovery =< 500ns, > 200mA (Io)

10ns

5µA @ 10V

50pF @ 0V, 1MHz

Surface Mount

SOD-123

-55°C ~ 125°C

CSA2J-E3/I

Vishay Semiconductor Diodes Division

DIODE GPP 2A 600V DO-214AC SMA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1.6A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.1µs
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

Paket: DO-214AC, SMA

Lager6.592

600V

1.6A

1.15V @ 2A

Standard Recovery >500ns, > 200mA (Io)

2.1µs

5µA @ 600V

11pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

RURG80100

Fairchild/ON Semiconductor

DIODE GEN PURP 1KV 80A TO247

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 80A
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 80A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 250µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -65°C ~ 175°C

Paket: TO-247-2

Lager5.488

1000V

80A

1.9V @ 80A

Fast Recovery =< 500ns, > 200mA (Io)

200ns

250µA @ 1000V

-

Through Hole

TO-247-2

-65°C ~ 175°C

UF4004-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

Paket: DO-204AL, DO-41, Axial

Lager168.000

400V

1A

1V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

10µA @ 400V

17pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 150°C

ES1C-13-F

Diodes Incorporated

DIODE GEN PURP 150V 1A SMA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 920mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 5µA @ 150V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C

Paket: DO-214AC, SMA

Lager1.236.420

150V

1A

920mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

5µA @ 150V

10pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

SMA

-55°C ~ 150°C

UF5400GP-TP

Micro Commercial Co

DIODE GEN PURP 50V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

Paket: -

Request a Quote

50 V

3A

950 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

10 µA @ 50 V

75pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

FR307G

Taiwan Semiconductor Corporation

DIODE GEN PURP 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

Paket: -

Lager11.244

1000 V

3A

1.3 V @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

500 ns

5 µA @ 1000 V

30pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

UES2604HR2

Microchip Technology

DIODE GEN PURP 30A TO3

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-3
Operating Temperature - Junction: -55°C ~ 150°C

Paket: -

Request a Quote

-

30A

1.25 V @ 15 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

-

Through Hole

TO-204AA, TO-3

TO-3

-55°C ~ 150°C

DSC06C065FP

Diodes Incorporated

SILICON CARBIDE RECTIFIER ITO-22

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 170 µA @ 650 V
Capacitance @ Vr, F: 191pF @ 100mV, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AC (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C

Paket: -

Lager150

650 V

6A

1.7 V @ 6 A

Fast Recovery =< 500ns, > 200mA (Io)

-

170 µA @ 650 V

191pF @ 100mV, 1MHz

Through Hole

TO-220-2 Full Pack, Isolated Tab

ITO-220AC (Type WX)

-55°C ~ 175°C

DMA30IM1600PZ-TRL

IXYS

DIODE GEN PURP 1.6KV 30A TO263HV

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600 V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
Capacitance @ Vr, F: 10pF @ 400V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C

Paket: -

Request a Quote

1600 V

30A

1.29 V @ 30 A

Standard Recovery >500ns, > 200mA (Io)

-

40 µA @ 1600 V

10pF @ 400V, 1MHz

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TO-263HV

-55°C ~ 175°C

NRTS1260PFST3G

onsemi

DIODE SCHOTTKY 60V 12A TO277-3

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 12 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 350 µA @ 60 V
Capacitance @ Vr, F: 1180pf @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C

Paket: -

Lager14.970

60 V

12A

660 mV @ 12 A

Fast Recovery =< 500ns, > 200mA (Io)

-

350 µA @ 60 V

1180pf @ 1V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277-3

-55°C ~ 175°C

SR509

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 90V 5A DO201AD

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

Paket: -

Request a Quote

90 V

5A

850 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 90 V

-

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

NTE597

NTE Electronics, Inc

DIODE GEN PURP 200V 8A TO220-2

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C

Paket: -

Request a Quote

200 V

8A

1.3 V @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

60 ns

500 µA @ 200 V

-

Through Hole

TO-220-2

-65°C ~ 175°C

M1494NK250

IXYS

DIODE GEN PURP 2.5KV 1975A WD8

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 2500 V
Current - Average Rectified (Io): 1975A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1000 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.9 µs
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Clamp On
Package / Case: DO-200AB, B-PUK
Supplier Device Package: WD8
Operating Temperature - Junction: -

Paket: -

Request a Quote

2500 V

1975A

1.15 V @ 1000 A

Standard Recovery >500ns, > 200mA (Io)

3.9 µs

-

Clamp On

DO-200AB, B-PUK

WD8

-