Bild |
Teilenummer |
Hersteller |
Beschreibung |
Paket |
Lager |
Anzahl |
Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay Semiconductor Diodes Division |
DIODE RECTIFIER 1200V 8A DPAK
|
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager7.344 |
|
1200V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 1200V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -55°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 4A DO214AA
|
Paket: DO-214AA, SMB |
Lager18.000 |
|
40V | 4A | 490mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 40V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -65°C ~ 150°C |
||
GeneSiC Semiconductor |
DIODE GEN PURP 200V 40A DO5
|
Paket: DO-203AB, DO-5, Stud |
Lager5.088 |
|
200V | 40A | 1V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 25µA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -40°C ~ 125°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 20A TO263AB
|
Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Lager5.056 |
|
1200V | 20A | 1.31V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 100µA @ 1200V | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | -40°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 16A TO263AB
|
Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Lager2.960 |
|
100V | 16A | 975mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 100V | 175pF @ 4V, 1MHz | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263AB | -65°C ~ 150°C |
||
Sanken |
DIODE GEN PURP 1KV 800MA AXIAL
|
Paket: Axial |
Lager3.104 |
|
1000V | 800mA | 1.2V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 800V | - | Through Hole | Axial | Axial | -40°C ~ 150°C |
||
Diodes Incorporated |
DIODE SBR 100V 8A POWERDI5
|
Paket: PowerDI? 5 |
Lager3.328 |
|
100V | 8A | 880mV @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 2µA @ 100V | - | Surface Mount | PowerDI? 5 | PowerDI?5 | -55°C ~ 175°C |
||
Vishay Semiconductor Diodes Division |
DIODE GPP 5A 800V DO-214AB
|
Paket: DO-214AB, SMC |
Lager6.272 |
|
800V | 5A | 1.15V @ 5A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 10µA @ 800V | 40pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | -55°C ~ 150°C |
||
Diodes Incorporated |
DIODE GEN 800V 1A POWERDI123
|
Paket: POWERDI?123 |
Lager352.200 |
|
800V | 1A | 1.35V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 10µA @ 800V | - | Surface Mount | POWERDI?123 | PowerDI? 123 | -65°C ~ 150°C |
||
Cree/Wolfspeed |
DIODE SCHOTTKY 1.2KV 9A TO252-2
|
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager4.688 |
|
1200V | 9A | 1.8V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 1200V | 167pF @ 0V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | -55°C ~ 175°C |
||
IXYS |
DIODE GEN PURP 600V 8A TO263AB
|
Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Lager5.232 |
|
600V | 8A | 1.5V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 20µA @ 600V | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263AB | -40°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE STD REC 1000V DO219AB-M
|
Paket: DO-219AB |
Lager482.208 |
|
1000V | 700mA | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 10µA @ 1000V | 4pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -55°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A DO204AL
|
Paket: DO-204AL, DO-41, Axial |
Lager147.552 |
|
600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 600V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
||
STMicroelectronics |
DIODE GEN PURP 1KV 60A DO247
|
Paket: DO-247-2 (Straight Leads) |
Lager16.728 |
|
1000V | 60A | 2V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 115ns | 20µA @ 1000V | - | Through Hole | DO-247-2 (Straight Leads) | DO-247 | 175°C (Max) |
||
Diodes Incorporated |
DIODE SCHOTTKY 45V 100MA SOD323
|
Paket: SC-76, SOD-323 |
Lager2.715.192 |
|
45V | 100mA (DC) | 450mV @ 10mA | Small Signal =< 200mA (Io), Any Speed | - | 1µA @ 10V | 6pF @ 10V, 1MHz | Surface Mount | SC-76, SOD-323 | SOD-323 | -40°C ~ 150°C |
||
Comchip Technology |
AUTOMOTIVE DIODE SCHOTTKY 60V 2A
|
Paket: - |
Request a Quote |
|
60 V | 2A | 700 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 60 V | 70pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | SMB/DO-214AA | -55°C ~ 125°C |
||
Comchip Technology |
DIODE GEN PURP 400V 10A DO214AB
|
Paket: - |
Request a Quote |
|
400 V | 10A | 1 V @ 10 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 400 V | 100pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
||
Taiwan Semiconductor Corporation |
2A, 400V, STANDARD RECOVERY RECT
|
Paket: - |
Lager84.000 |
|
400 V | 2A | 1.1 V @ 2 A | Standard Recovery >500ns, > 200mA (Io) | - | 1 µA @ 400 V | 12pF @ 4V, 1MHz | Surface Mount | SOD-128 | SOD-128 | -55°C ~ 150°C |
||
Vishay |
INTAPAK BRIDGE BARRIER VS-644402
|
Paket: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - |
||
Microchip Technology |
DIODE SCHOTTKY 45V 150A THINKEY3
|
Paket: - |
Request a Quote |
|
45 V | 150A | 460 mV @ 50 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5 mA @ 45 V | 7000pF @ 5V, 1MHz | Surface Mount | ThinKey™3 | ThinKey™3 | -65°C ~ 150°C |
||
NTE Electronics, Inc |
DIODE SCHOTTKY 100V 5A DO201AD
|
Paket: - |
Request a Quote |
|
100 V | 5A | 850 mV @ 5 A | No Recovery Time > 500mA (Io) | - | 500 µA @ 100 V | 380pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
||
Vishay |
5A, 60V, DFN3820A TRENCH SKY REC
|
Paket: - |
Request a Quote |
|
60 V | 5A | 630 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10 µA @ 60 V | 770pF @ 4V, 1MHz | Surface Mount, Wettable Flank | 2-VDFN | DFN3820A | -40°C ~ 175°C |
||
Toshiba Semiconductor and Storage |
DIODE GEN PURP 600V 1A M-FLAT
|
Paket: - |
Request a Quote |
|
600 V | 1A | 2 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | 50 µA @ 600 V | - | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | 150°C |
||
Microchip Technology |
DIODE GEN PURP 1.4KV 70A DO5
|
Paket: - |
Request a Quote |
|
1400 V | 70A | 1.25 V @ 200 A | Standard Recovery >500ns, > 200mA (Io) | 5 µs | 25 µA @ 1400 V | - | Stud Mount | DO-203AB, DO-5, Stud | DO-5 (DO-203AB) | -55°C ~ 175°C |
||
Diodes Incorporated |
DIODE GP 600V 1A POWERDI123
|
Paket: - |
Lager9.000 |
|
600 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 3 µA @ 600 V | 10pF @ 4V, 1MHz | Surface Mount | POWERDI®123 | PowerDI™ 123 | -65°C ~ 150°C |
||
Diodes Incorporated |
DIODE
|
Paket: - |
Request a Quote |
|
60 V | 2A | 700 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 60 V | 200pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | SMB | -65°C ~ 150°C |
||
Microchip Technology |
SMALL-SIGNAL SCHOTTKY
|
Paket: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - |
||
Micro Commercial Co |
Interface
|
Paket: - |
Request a Quote |
|
200 V | 16A | 975 mV @ 16 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 200 V | 65pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |