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Dioden - Gleichrichter - Einzeln

Aufzeichnungen 52.788
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Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
GP10B-M3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3µs
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: 8pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: DO-204AL, DO-41, Axial
Lager4.864
100V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
3µs
5µA @ 100V
8pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
UF2004-T
Diodes Incorporated

DIODE GEN PURP 400V 2A DO15

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-15
  • Operating Temperature - Junction: -65°C ~ 150°C
Paket: DO-204AC, DO-15, Axial
Lager4.240
400V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 400V
50pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-15
-65°C ~ 150°C
MBR745/45
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 7.5A TO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 7.5A
  • Voltage - Forward (Vf) (Max) @ If: 840mV @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 45V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -65°C ~ 150°C
Paket: TO-220-2
Lager3.072
45V
7.5A
840mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 45V
-
Through Hole
TO-220-2
TO-220AC
-65°C ~ 150°C
hot RURU15060
Fairchild/ON Semiconductor

DIODE GEN PURP 600V 150A TO218

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 150A
  • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 100ns
  • Current - Reverse Leakage @ Vr: 250µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-218-1
  • Supplier Device Package: TO-218
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: TO-218-1
Lager7.200
600V
150A
1.6V @ 150A
Fast Recovery =< 500ns, > 200mA (Io)
100ns
250µA @ 600V
-
Through Hole
TO-218-1
TO-218
-65°C ~ 175°C
hot 183NQ100R
Vishay Semiconductor Diodes Division

DIODE MODULE 100V 180A HALF-PAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 180A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 180A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 4.5mA @ 100V
  • Capacitance @ Vr, F: 4150pF @ 5V, 1MHz
  • Mounting Type: Chassis Mount
  • Package / Case: D-67 HALF-PAK
  • Supplier Device Package: HALF-PAK
  • Operating Temperature - Junction: -
Paket: D-67 HALF-PAK
Lager14.388
100V
180A
950mV @ 180A
Fast Recovery =< 500ns, > 200mA (Io)
-
4.5mA @ 100V
4150pF @ 5V, 1MHz
Chassis Mount
D-67 HALF-PAK
HALF-PAK
-
hot IRKE91/08A
Vishay Semiconductor Diodes Division

DIODE MODULE 800V 100A ADD-A-PAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 100A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10mA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: ADD-A-PAK (2)
  • Supplier Device Package: ADD-A-PAK?
  • Operating Temperature - Junction: -
Paket: ADD-A-PAK (2)
Lager4.784
800V
100A
-
Standard Recovery >500ns, > 200mA (Io)
-
10mA @ 800V
-
Chassis Mount
ADD-A-PAK (2)
ADD-A-PAK?
-
hot 1N4003
Micro Commercial Co

DIODE GEN PURP 200V 1A DO41

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2µs
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: DO-204AL, DO-41, Axial
Lager492.792
200V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
2µs
5µA @ 200V
-
Through Hole
DO-204AL, DO-41, Axial
DO-41
-55°C ~ 150°C
JAN1N5188
Microsemi Corporation

DIODE GEN PURP 400V 3A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250ns
  • Current - Reverse Leakage @ Vr: 2µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: B, Axial
  • Supplier Device Package: Axial
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: B, Axial
Lager4.912
400V
3A
1.5V @ 9A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
2µA @ 400V
-
Through Hole
B, Axial
Axial
-65°C ~ 175°C
DHG20I600PA
IXYS

DIODE GEN PURP 600V 20A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 2.32V @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 30µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: TO-220-2
Lager5.936
600V
20A
2.32V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
30µA @ 600V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
GF1MHE3/67A
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 1A DO214BA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2µs
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214BA
  • Supplier Device Package: DO-214BA (GF1)
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: DO-214BA
Lager4.560
1000V
1A
1.2V @ 1A
Standard Recovery >500ns, > 200mA (Io)
2µs
5µA @ 1000V
-
Surface Mount
DO-214BA
DO-214BA (GF1)
-65°C ~ 175°C
VSB2200S-M3/73
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 2A 200V AXIAL

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.23V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40µA @ 200V
  • Capacitance @ Vr, F: 110pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -40°C ~ 150°C
Paket: DO-204AL, DO-41, Axial
Lager5.488
200V
2A
1.23V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
40µA @ 200V
110pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-40°C ~ 150°C
hot MBRM110LT3G
ON Semiconductor

DIODE SCHOTTKY 10V 1A POWERMITE

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 10V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 365mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 10V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-216AA
  • Supplier Device Package: Powermite
  • Operating Temperature - Junction: -55°C ~ 125°C
Paket: DO-216AA
Lager26.880
10V
1A
365mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 10V
-
Surface Mount
DO-216AA
Powermite
-55°C ~ 125°C
CD214B-F2200
Bourns Inc.

DIODE GEN PURP 200V 2A SMB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 920mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: 200pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB (DO-214AA)
  • Operating Temperature - Junction: -55°C ~ 125°C
Paket: DO-214AA, SMB
Lager2.640
200V
2A
920mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
5µA @ 200V
200pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
SMB (DO-214AA)
-55°C ~ 125°C
EM 1A
Sanken

DIODE GEN PURP 600V 1A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 970mV @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 150°C
Paket: Axial
Lager5.088
600V
1A
970mV @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 600V
-
Through Hole
Axial
-
-40°C ~ 150°C
GL41DHE3/97
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A DO213AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: 8pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF (Glass)
  • Supplier Device Package: DO-213AB
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: DO-213AB, MELF (Glass)
Lager3.536
200V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 200V
8pF @ 4V, 1MHz
Surface Mount
DO-213AB, MELF (Glass)
DO-213AB
-65°C ~ 175°C
2A04G R0G
TSC America Inc.

DIODE, 2A, 400V, DO-15

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 2A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-204AC (DO-15)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: DO-204AC, DO-15, Axial
Lager6.896
400V
2A
1V @ 2A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 400V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
hot RB751VM-40TE-17
Rohm Semiconductor

DIODE SCHOTTKY 30V 30MA UMD2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 30mA
  • Voltage - Forward (Vf) (Max) @ If: 370mV @ 1mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500nA @ 30V
  • Capacitance @ Vr, F: 2pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-90, SOD-323F
  • Supplier Device Package: UMD2
  • Operating Temperature - Junction: 150°C (Max)
Paket: SC-90, SOD-323F
Lager2.423.700
30V
30mA
370mV @ 1mA
Small Signal =< 200mA (Io), Any Speed
-
500nA @ 30V
2pF @ 1V, 1MHz
Surface Mount
SC-90, SOD-323F
UMD2
150°C (Max)
hot MMSD301T1G
ON Semiconductor

DIODE SCHOTTKY 30V 200MA SOD123

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 10mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200nA @ 25V
  • Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
  • Operating Temperature - Junction: -55°C ~ 125°C
Paket: SOD-123
Lager306.360
30V
200mA (DC)
600mV @ 10mA
Small Signal =< 200mA (Io), Any Speed
-
200nA @ 25V
1.5pF @ 0V, 1MHz
Surface Mount
SOD-123
SOD-123
-55°C ~ 125°C
1N5395-AP
Micro Commercial Co

DIODE GEN PURP 400V 1.5A DO15

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-15
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: -
Request a Quote
400 V
1.5A
1.1 V @ 1.5 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 400 V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-15
-55°C ~ 150°C
SG-10LXZ23S
Sanken Electric USA Inc.

DIODE FOR ALTERNATOR (SURFACE MO

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 17 V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 35 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, Gull Wing
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 150°C
Paket: -
Request a Quote
17 V
35A
1.05 V @ 35 A
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Surface Mount
2-SMD, Gull Wing
-
-40°C ~ 150°C
S1MHM3_A-H
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1KV 1A DO214AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.8 µs
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Capacitance @ Vr, F: 12pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: -
Lager108.000
1000 V
1A
1.1 V @ 1 A
Standard Recovery >500ns, > 200mA (Io)
1.8 µs
5 µA @ 1000 V
12pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
BAT42WS-AU_R1_000A1
Panjit International Inc.

DIODE SCHOTTKY 30V 200MA SOD323

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 nA @ 30 V
  • Capacitance @ Vr, F: 4pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-90, SOD-323F
  • Supplier Device Package: SOD-323
  • Operating Temperature - Junction: -55°C ~ 125°C
Paket: -
Lager13.500
30 V
200mA
1 V @ 200 mA
Small Signal =< 200mA (Io), Any Speed
-
500 nA @ 30 V
4pF @ 0V, 1MHz
Surface Mount
SC-90, SOD-323F
SOD-323
-55°C ~ 125°C
JANTXV1N6942UTK3CS
Microchip Technology

DIODE SCHOTTKY 45V 150A THINKEY3

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45 V
  • Current - Average Rectified (Io): 150A
  • Voltage - Forward (Vf) (Max) @ If: 460 mV @ 50 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 mA @ 45 V
  • Capacitance @ Vr, F: 7000pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: ThinKey™3
  • Supplier Device Package: ThinKey™3
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: -
Request a Quote
45 V
150A
460 mV @ 50 A
Fast Recovery =< 500ns, > 200mA (Io)
-
5 mA @ 45 V
7000pF @ 5V, 1MHz
Surface Mount
ThinKey™3
ThinKey™3
-65°C ~ 175°C
KSF30A20B
KYOCERA AVX

DIODE GEN PURP 200V 30A TO247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 980 mV @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 25 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
  • Operating Temperature - Junction: -40°C ~ 150°C
Paket: -
Request a Quote
200 V
30A
980 mV @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
25 µA @ 200 V
-
Through Hole
TO-247-3
TO-247
-40°C ~ 150°C
RB160MM-60TFTR
Rohm Semiconductor

DIODE SCHOTTKY 60V 1A PMDU

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 60 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: PMDU
  • Operating Temperature - Junction: 150°C (Max)
Paket: -
Lager29.769
60 V
1A
550 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
50 µA @ 60 V
-
Surface Mount
SOD-123F
PMDU
150°C (Max)
SDS120J015C3-ISATH
Luminus Devices Inc.

DIODE 1200V-15A TO220-2L

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 51A
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 45 µA @ 1.2 kV
  • Capacitance @ Vr, F: 1182pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2L
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: -
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1200 V
51A
1.5 V @ 15 A
No Recovery Time > 500mA (Io)
0 ns
45 µA @ 1.2 kV
1182pF @ 0V, 1MHz
Through Hole
TO-220-2
TO-220-2L
-55°C ~ 175°C
SB2150-BP
Micro Commercial Co

Interface

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 150 V
  • Capacitance @ Vr, F: 65pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-15
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: -
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150 V
2A
950 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 150 V
65pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-15
-55°C ~ 150°C
S8ML-TP
Micro Commercial Co

Interface

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Capacitance @ Vr, F: 150pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC (DO-214AB)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: -
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1000 V
8A
1.1 V @ 8 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 1000 V
150pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
SMC (DO-214AB)
-55°C ~ 150°C
RB520ZS-40T2R
Rohm Semiconductor

DIODE SCHOTTKY 40V 100MA GMD2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 480 mV @ 10 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2 µA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 0201 (0603 Metric)
  • Supplier Device Package: GMD2
  • Operating Temperature - Junction: 150°C
Paket: -
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40 V
100mA
480 mV @ 10 mA
Small Signal =< 200mA (Io), Any Speed
-
2 µA @ 40 V
-
Surface Mount
0201 (0603 Metric)
GMD2
150°C
NTE120
NTE Electronics, Inc

DIODE GEN PURP 10V 65MA 7SIP

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 10 V
  • Current - Average Rectified (Io): 65mA
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: 7-SIP Formed Leads
  • Supplier Device Package: 7-SIP
  • Operating Temperature - Junction: 85°C (Max)
Paket: -
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10 V
65mA
-
Small Signal =< 200mA (Io), Any Speed
-
-
-
Through Hole
7-SIP Formed Leads
7-SIP
85°C (Max)