Page 853 - Dioden - Gleichrichter - Einzeln | Diskrete Halbleiterprodukte

Teilenummer	Hersteller	Beschreibung	Paket	Lager	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
Z7130A	Diodes Incorporated	DIODE SCHOTTKY 30A SOD323 Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Paket: -	Lager5.872	-	-	-	-	-	-	-	-	-	-	-
RGP10MEHE3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	Paket: DO-204AL, DO-41, Axial	Lager3.520	1000V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
SS14T3	ON Semiconductor	DIODE SCHOTTKY 40V 1A SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 470mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -55°C ~ 150°C	Paket: DO-214AC, SMA	Lager31.512	40V	1A	470mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 40V	-	Surface Mount	DO-214AC, SMA	SMA	-55°C ~ 150°C
VS-SD703C25S30L	Vishay Semiconductor Diodes Division	DIODE MODULE 2.5KV 790A DO200AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2500V Current - Average Rectified (Io): 790A Voltage - Forward (Vf) (Max) @ If: 1.85V @ 1500A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 50mA @ 2500V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AB, B-PUK Supplier Device Package: DO-200AB, B-PUK Operating Temperature - Junction: -	Paket: DO-200AB, B-PUK	Lager7.120	2500V	790A	1.85V @ 1500A	Standard Recovery >500ns, > 200mA (Io)	3µs	50mA @ 2500V	-	Chassis Mount	DO-200AB, B-PUK	DO-200AB, B-PUK	-
FR40GR05	GeneSiC Semiconductor	DIODE GEN PURP REV 400V 40A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1V @ 40A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 25µA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -40°C ~ 125°C	Paket: DO-203AB, DO-5, Stud	Lager2.944	400V	40A	1V @ 40A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	25µA @ 100V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-40°C ~ 125°C
VS-60EPF02PBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 60A TO247AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 180ns Current - Reverse Leakage @ Vr: 100µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247AC Modified Operating Temperature - Junction: -40°C ~ 150°C	Paket: TO-247-2	Lager3.024	200V	60A	1.3V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	180ns	100µA @ 200V	-	Through Hole	TO-247-2	TO-247AC Modified	-40°C ~ 150°C
SR1504 A0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 15A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 550mV @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: R6, Axial Supplier Device Package: R-6 Operating Temperature - Junction: -50°C ~ 150°C	Paket: R6, Axial	Lager3.312	40V	15A	550mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Through Hole	R6, Axial	R-6	-50°C ~ 150°C
UG2A-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 2A DO204AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C	Paket: DO-204AC, DO-15, Axial	Lager5.024	50V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 50V	-	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
CD1408-F1200	Bourns Inc.	DIODE GEN PURP 200V 1A 1408 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: Chip, Concave Terminals Supplier Device Package: 1408 Operating Temperature - Junction: -65°C ~ 175°C	Paket: Chip, Concave Terminals	Lager5.136	200V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	300ns	5µA @ 200V	15pF @ 4V, 1MHz	Surface Mount	Chip, Concave Terminals	1408	-65°C ~ 175°C
CD1607-B120LLF	Bourns Inc.	DIODE SCHOTTKY 20V 1A 2MINISMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 380mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 20V Capacitance @ Vr, F: 100pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123T Supplier Device Package: 2-Mini-SMA Operating Temperature - Junction: -55°C ~ 125°C	Paket: SOD-123T	Lager4.048	20V	1A	380mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 20V	100pF @ 4V, 1MHz	Surface Mount	SOD-123T	2-Mini-SMA	-55°C ~ 125°C
SS25FA	Fairchild/ON Semiconductor	DIODE SCHOTTKY 50V 2A SOD123FA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 50V Capacitance @ Vr, F: 120pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123FA Operating Temperature - Junction: -55°C ~ 150°C	Paket: SOD-123W	Lager3.392	50V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 50V	120pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD-123FA	-55°C ~ 150°C
RS1DFA	Fairchild/ON Semiconductor	DIODE GP 200V 800MA SOD123FA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123FA Operating Temperature - Junction: -55°C ~ 150°C	Paket: SOD-123W	Lager5.504	200V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	10pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD-123FA	-55°C ~ 150°C
SS35	Fairchild/ON Semiconductor	DIODE SCHOTTKY 50V 3A SMC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 750mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC (DO-214AB) Operating Temperature - Junction: -55°C ~ 150°C	Paket: DO-214AB, SMC	Lager154.476	50V	3A	750mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Surface Mount	DO-214AB, SMC	SMC (DO-214AB)	-55°C ~ 150°C
BYV28-200-TAP	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 200V 3.5A SOD64 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3.5A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 1µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: SOD-64, Axial Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C	Paket: SOD-64, Axial	Lager6.032	200V	3.5A	1.1V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	1µA @ 200V	-	Through Hole	SOD-64, Axial	SOD-64	-55°C ~ 175°C
FR1M	Diotec Semiconductor	DIODE FR SMA 1000V 1A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA/DO-214AC Operating Temperature - Junction: -50°C ~ 150°C	Paket: -	Lager17.190	1000 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	5 µA @ 1000 V	-	Surface Mount	DO-214AC, SMA	SMA/DO-214AC	-50°C ~ 150°C
PMEG1020EH-QX	Nexperia USA Inc.	PMEG1020EH-Q/SOD123F/SOD2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 10 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 460 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3 mA @ 10 V Capacitance @ Vr, F: 40pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F Operating Temperature - Junction: 150°C	Paket: -	Request a Quote	10 V	2A	460 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	3 mA @ 10 V	40pF @ 5V, 1MHz	Surface Mount	SOD-123F	SOD-123F	150°C
HSB83JTL-E	Renesas Electronics Corporation	DIODE FOR HIGH VOLTAGE SWITCHING Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
1N6631US-TR	Microchip Technology	DIODE GEN PURP 1.1KV 1.4A A-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1100 V Current - Average Rectified (Io): 1.4A Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.4 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Current - Reverse Leakage @ Vr: 4 µA @ 1100 V Capacitance @ Vr, F: 40pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: A-MELF Operating Temperature - Junction: -65°C ~ 150°C	Paket: -	Request a Quote	1100 V	1.4A	1.4 V @ 1.4 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	4 µA @ 1100 V	40pF @ 10V, 1MHz	Surface Mount	SQ-MELF, A	A-MELF	-65°C ~ 150°C
SM4934A-TP	Micro Commercial Co	DIODE GEN PURP 100V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Current - Reverse Leakage @ Vr: 5 µA @ 100 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	Paket: -	Request a Quote	100 V	1A	-	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	5 µA @ 100 V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
1PS76SB10-QX	Nexperia USA Inc.	DIODE SCHOTTKY 30V 200MA SOD323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2 µA @ 25 V Capacitance @ Vr, F: 10pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: 125°C	Paket: -	Request a Quote	30 V	200mA	800 mV @ 100 mA	Small Signal =< 200mA (Io), Any Speed	-	2 µA @ 25 V	10pF @ 1V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	125°C
1N1183RA	Solid State Inc.	DIODE GEN PURP REV 12A DO4 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 200°C	Paket: -	Request a Quote	-	12A	1.2 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 200°C
CD3A20	Microchip Technology	DIODE SCHOTTKY 20V 3A DIE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 20 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die Operating Temperature - Junction: -65°C ~ 125°C	Paket: -	Request a Quote	20 V	3A	550 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 20 V	-	Surface Mount	Die	Die	-65°C ~ 125°C
SICU1060XY-TP	Micro Commercial Co	SCHOTTKY DIODES Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 32A Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 25 µA @ 650 V Capacitance @ Vr, F: 543pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 (DPAK) Operating Temperature - Junction: -55°C ~ 175°C	Paket: -	Request a Quote	650 V	32A	1.55 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	25 µA @ 650 V	543pF @ 0V, 1MHz	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252 (DPAK)	-55°C ~ 175°C
MSASC25W100KS	Microchip Technology	DIODE SCHOTTKY 100V 25A THINKEY2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 910 mV @ 25 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: ThinKey™2 Supplier Device Package: ThinKey™2 Operating Temperature - Junction: -65°C ~ 175°C	Paket: -	Request a Quote	100 V	25A	910 mV @ 25 A	Fast Recovery =< 500ns, > 200mA (Io)	-	-	-	Surface Mount	ThinKey™2	ThinKey™2	-65°C ~ 175°C
HER152-AP	Micro Commercial Co	DIODE GEN PURP 100V 1.5A DO15 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 100 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -55°C ~ 125°C	Paket: -	Request a Quote	100 V	1.5A	1 V @ 1.5 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 100 V	50pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-15	-55°C ~ 125°C
C6D20065G-TR	Wolfspeed, Inc.	SIC, SCHOTTKY DIODE,20A, 650V, T Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 20 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263-2 Operating Temperature - Junction: -55°C ~ 175°C	Paket: -	Lager7.200	650 V	20A	1.27 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	-	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263-2	-55°C ~ 175°C
NSF03A40	KYOCERA AVX	DIODE GEN PURP 400V 3A NSMC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Current - Reverse Leakage @ Vr: 20 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: nSMC Operating Temperature - Junction: -40°C ~ 150°C	Paket: -	Request a Quote	400 V	3A	1.25 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	20 µA @ 400 V	-	Surface Mount	DO-214AB, SMC	nSMC	-40°C ~ 150°C
SMBT1580LT3	onsemi	SS SOT23 GP XSTR SPCL TR Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
RB531CM-30T2R	Rohm Semiconductor	DIODE SCHOTTKY 30V 100MA VMN2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 370 mV @ 10 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 7 µA @ 10 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: VMN2 (SOD-923) Operating Temperature - Junction: 125°C	Paket: -	Lager47.100	30 V	100mA	370 mV @ 10 mA	Small Signal =< 200mA (Io), Any Speed	-	7 µA @ 10 V	-	Surface Mount	2-SMD, Flat Lead	VMN2 (SOD-923)	125°C
SS25SHE3_B-I	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 50V 2A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 750 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 50 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 125°C	Paket: -	Request a Quote	50 V	2A	750 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 50 V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 125°C

Z7130A

Diodes Incorporated

DIODE SCHOTTKY 30A SOD323

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

Paket: -

Lager5.872

-

RGP10MEHE3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

Paket: DO-204AL, DO-41, Axial

Lager3.520

1000V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

500ns

5µA @ 1000V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

SS14T3

ON Semiconductor

DIODE SCHOTTKY 40V 1A SMA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 470mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C

Paket: DO-214AC, SMA

Lager31.512

40V

1A

470mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 40V

-

Surface Mount

DO-214AC, SMA

SMA

-55°C ~ 150°C

VS-SD703C25S30L

Vishay Semiconductor Diodes Division

DIODE MODULE 2.5KV 790A DO200AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 2500V
Current - Average Rectified (Io): 790A
Voltage - Forward (Vf) (Max) @ If: 1.85V @ 1500A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 50mA @ 2500V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AB, B-PUK
Supplier Device Package: DO-200AB, B-PUK
Operating Temperature - Junction: -

Paket: DO-200AB, B-PUK

Lager7.120

2500V

790A

1.85V @ 1500A

Standard Recovery >500ns, > 200mA (Io)

3µs

50mA @ 2500V

-

Chassis Mount

DO-200AB, B-PUK

-

FR40GR05

GeneSiC Semiconductor

DIODE GEN PURP REV 400V 40A DO5

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 1V @ 40A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 25µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C

Paket: DO-203AB, DO-5, Stud

Lager2.944

400V

40A

1V @ 40A

Fast Recovery =< 500ns, > 200mA (Io)

500ns

25µA @ 100V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-40°C ~ 125°C

VS-60EPF02PBF

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 60A TO247AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 180ns
Current - Reverse Leakage @ Vr: 100µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -40°C ~ 150°C

Paket: TO-247-2

Lager3.024

200V

60A

1.3V @ 60A

Fast Recovery =< 500ns, > 200mA (Io)

180ns

100µA @ 200V

-

Through Hole

TO-247-2

TO-247AC Modified

-40°C ~ 150°C

SR1504 A0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 15A,

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: R6, Axial
Supplier Device Package: R-6
Operating Temperature - Junction: -50°C ~ 150°C

Paket: R6, Axial

Lager3.312

40V

15A

550mV @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 40V

-

Through Hole

R6, Axial

R-6

-50°C ~ 150°C

UG2A-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 2A DO204AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C

Paket: DO-204AC, DO-15, Axial

Lager5.024

50V

2A

950mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

5µA @ 50V

-

Through Hole

DO-204AC, DO-15, Axial

DO-204AC (DO-15)

-55°C ~ 150°C

CD1408-F1200

Bourns Inc.

DIODE GEN PURP 200V 1A 1408

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: Chip, Concave Terminals
Supplier Device Package: 1408
Operating Temperature - Junction: -65°C ~ 175°C

Paket: Chip, Concave Terminals

Lager5.136

200V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

300ns

5µA @ 200V

15pF @ 4V, 1MHz

Surface Mount

Chip, Concave Terminals

1408

-65°C ~ 175°C

CD1607-B120LLF

Bourns Inc.

DIODE SCHOTTKY 20V 1A 2MINISMA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 380mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 20V
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123T
Supplier Device Package: 2-Mini-SMA
Operating Temperature - Junction: -55°C ~ 125°C

Paket: SOD-123T

Lager4.048

20V

1A

380mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 20V

100pF @ 4V, 1MHz

Surface Mount

SOD-123T

2-Mini-SMA

-55°C ~ 125°C

SS25FA

Fairchild/ON Semiconductor

DIODE SCHOTTKY 50V 2A SOD123FA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400µA @ 50V
Capacitance @ Vr, F: 120pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: SOD-123FA
Operating Temperature - Junction: -55°C ~ 150°C

Paket: SOD-123W

Lager3.392

50V

2A

700mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

400µA @ 50V

120pF @ 4V, 1MHz

Surface Mount

SOD-123W

SOD-123FA

-55°C ~ 150°C

RS1DFA

Fairchild/ON Semiconductor

DIODE GP 200V 800MA SOD123FA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: SOD-123FA
Operating Temperature - Junction: -55°C ~ 150°C

Paket: SOD-123W

Lager5.504

200V

800mA

1.3V @ 800mA

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 200V

10pF @ 4V, 1MHz

Surface Mount

SOD-123W

SOD-123FA

-55°C ~ 150°C

SS35

Fairchild/ON Semiconductor

DIODE SCHOTTKY 50V 3A SMC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 750mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC (DO-214AB)
Operating Temperature - Junction: -55°C ~ 150°C

Paket: DO-214AB, SMC

Lager154.476

50V

3A

750mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 50V

-

Surface Mount

DO-214AB, SMC

SMC (DO-214AB)

-55°C ~ 150°C

BYV28-200-TAP

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 3.5A SOD64

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 3.5A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 1µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C

Paket: SOD-64, Axial

Lager6.032

200V

3.5A

1.1V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

1µA @ 200V

-

Through Hole

SOD-64, Axial

SOD-64

-55°C ~ 175°C

FR1M

Diotec Semiconductor

DIODE FR SMA 1000V 1A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA/DO-214AC
Operating Temperature - Junction: -50°C ~ 150°C

Paket: -

Lager17.190

1000 V

1A

1.3 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

500 ns

5 µA @ 1000 V

-

Surface Mount

DO-214AC, SMA

SMA/DO-214AC

-50°C ~ 150°C

PMEG1020EH-QX

Nexperia USA Inc.

PMEG1020EH-Q/SOD123F/SOD2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 10 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3 mA @ 10 V
Capacitance @ Vr, F: 40pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123F
Operating Temperature - Junction: 150°C

Paket: -

Request a Quote

10 V

2A

460 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

3 mA @ 10 V

40pF @ 5V, 1MHz

Surface Mount

SOD-123F

150°C

HSB83JTL-E

Renesas Electronics Corporation

DIODE FOR HIGH VOLTAGE SWITCHING

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

Paket: -

Request a Quote

-

1N6631US-TR

Microchip Technology

DIODE GEN PURP 1.1KV 1.4A A-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1100 V
Current - Average Rectified (Io): 1.4A
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.4 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Current - Reverse Leakage @ Vr: 4 µA @ 1100 V
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: A-MELF
Operating Temperature - Junction: -65°C ~ 150°C

Paket: -

Request a Quote

1100 V

1.4A

1.4 V @ 1.4 A

Fast Recovery =< 500ns, > 200mA (Io)

60 ns

4 µA @ 1100 V

40pF @ 10V, 1MHz

Surface Mount

SQ-MELF, A

A-MELF

-65°C ~ 150°C

SM4934A-TP

Micro Commercial Co

DIODE GEN PURP 100V 1A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

Paket: -

Request a Quote

100 V

1A

-

Fast Recovery =< 500ns, > 200mA (Io)

200 ns

5 µA @ 100 V

15pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

1PS76SB10-QX

Nexperia USA Inc.

DIODE SCHOTTKY 30V 200MA SOD323

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: 125°C

Paket: -

Request a Quote

30 V

200mA

800 mV @ 100 mA

Small Signal =< 200mA (Io), Any Speed

-

2 µA @ 25 V

10pF @ 1V, 1MHz

Surface Mount

SC-76, SOD-323

SOD-323

125°C

1N1183RA

Solid State Inc.

DIODE GEN PURP REV 12A DO4

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 200°C

Paket: -

Request a Quote

-

12A

1.2 V @ 30 A

Standard Recovery >500ns, > 200mA (Io)

-

Stud Mount

DO-203AA, DO-4, Stud

DO-4

-65°C ~ 200°C

CD3A20

Microchip Technology

DIODE SCHOTTKY 20V 3A DIE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Operating Temperature - Junction: -65°C ~ 125°C

Paket: -

Request a Quote

20 V

3A

550 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 20 V

-

Surface Mount

Die

-65°C ~ 125°C

SICU1060XY-TP

Micro Commercial Co

SCHOTTKY DIODES

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 32A
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
Capacitance @ Vr, F: 543pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C

Paket: -

Request a Quote

650 V

32A

1.55 V @ 10 A

No Recovery Time > 500mA (Io)

0 ns

25 µA @ 650 V

543pF @ 0V, 1MHz

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252 (DPAK)

-55°C ~ 175°C

MSASC25W100KS

Microchip Technology

DIODE SCHOTTKY 100V 25A THINKEY2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 25 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: ThinKey™2
Supplier Device Package: ThinKey™2
Operating Temperature - Junction: -65°C ~ 175°C

Paket: -

Request a Quote

100 V

25A

910 mV @ 25 A

Fast Recovery =< 500ns, > 200mA (Io)

-

Surface Mount

ThinKey™2

-65°C ~ 175°C

HER152-AP

Micro Commercial Co

DIODE GEN PURP 100V 1.5A DO15

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 125°C

Paket: -

Request a Quote

100 V

1.5A

1 V @ 1.5 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

5 µA @ 100 V

50pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-15

-55°C ~ 125°C

C6D20065G-TR

Wolfspeed, Inc.

SIC, SCHOTTKY DIODE,20A, 650V, T

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 20 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C

Paket: -

Lager7.200

650 V

20A

1.27 V @ 20 A

No Recovery Time > 500mA (Io)

0 ns

-

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TO-263-2

-55°C ~ 175°C

NSF03A40

KYOCERA AVX

DIODE GEN PURP 400V 3A NSMC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Current - Reverse Leakage @ Vr: 20 µA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: nSMC
Operating Temperature - Junction: -40°C ~ 150°C

Paket: -

Request a Quote

400 V

3A

1.25 V @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

30 ns

20 µA @ 400 V

-

Surface Mount

DO-214AB, SMC

nSMC

-40°C ~ 150°C

SMBT1580LT3

onsemi

SS SOT23 GP XSTR SPCL TR

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

Paket: -

Request a Quote

-

RB531CM-30T2R

Rohm Semiconductor

DIODE SCHOTTKY 30V 100MA VMN2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 10 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 7 µA @ 10 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: VMN2 (SOD-923)
Operating Temperature - Junction: 125°C

Paket: -

Lager47.100

30 V

100mA

370 mV @ 10 mA

Small Signal =< 200mA (Io), Any Speed

-

7 µA @ 10 V

-

Surface Mount

2-SMD, Flat Lead

VMN2 (SOD-923)

125°C

SS25SHE3_B-I

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 50V 2A DO214AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 µA @ 50 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 125°C

Paket: -

Request a Quote

50 V

2A

750 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

200 µA @ 50 V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 125°C