Page 937 - Dioden - Gleichrichter - Einzeln | Diskrete Halbleiterprodukte | Heisener Electronics
Kontaktieren Sie uns
SalesDept@heisener.com +86-755-83210559 ext. 816
Login/Registrieren
Language Translation

* Please refer to the English Version as our Official Version.

BOM
Wagen 0

Dioden - Gleichrichter - Einzeln

Aufzeichnungen 52.788
Page  937/1.886
Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
MBRF10H45HE3/45
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY ITO-220AC

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
Paket: -
Lager5.856
-
-
-
-
-
-
-
-
-
-
-
hot STTH30R04DY
STMicroelectronics

DIODE GEN PURP 400V 30A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.55V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 100ns
  • Current - Reverse Leakage @ Vr: 15µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -40°C ~ 175°C
Paket: TO-220-2
Lager5.520
400V
30A
1.55V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
100ns
15µA @ 400V
-
Through Hole
TO-220-2
TO-220AC
-40°C ~ 175°C
CSFMT101-HF
Comchip Technology

DIODE GEN PURP 50V 1A SOD123H

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123H
  • Supplier Device Package: SOD-123H
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: SOD-123H
Lager3.712
50V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 50V
10pF @ 4V, 1MHz
Surface Mount
SOD-123H
SOD-123H
-55°C ~ 150°C
USB260-E3/5BT
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 2A DO214AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: DO-214AA, SMB
Lager6.720
600V
2A
1.6V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
5µA @ 600V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
RS1PDHE3/85A
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A DO220AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 1µA @ 200V
  • Capacitance @ Vr, F: 9pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-220AA
  • Supplier Device Package: DO-220AA (SMP)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: DO-220AA
Lager7.552
200V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
1µA @ 200V
9pF @ 4V, 1MHz
Surface Mount
DO-220AA
DO-220AA (SMP)
-55°C ~ 150°C
RGP02-15EHE3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.5KV 500MA DO204

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1500V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 100mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 300ns
  • Current - Reverse Leakage @ Vr: 5µA @ 1500V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: DO-204AL, DO-41, Axial
Lager2.304
1500V
500mA
1.8V @ 100mA
Fast Recovery =< 500ns, > 200mA (Io)
300ns
5µA @ 1500V
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
ES2CHE3/5BT
Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 2A DO214AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 10µA @ 150V
  • Capacitance @ Vr, F: 18pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: DO-214AA, SMB
Lager5.808
150V
2A
900mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
10µA @ 150V
18pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
BYS10-45HE3/TR3
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 1.5A DO214AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 45V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -65°C ~ 150°C
Paket: DO-214AC, SMA
Lager4.752
45V
1.5A
500mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 45V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-65°C ~ 150°C
BAY80
Fairchild/ON Semiconductor

DIODE GEN PURP 150V 200MA DO35

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 150mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 60ns
  • Current - Reverse Leakage @ Vr: 100nA @ 120V
  • Capacitance @ Vr, F: 6pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
  • Operating Temperature - Junction: 175°C (Max)
Paket: DO-204AH, DO-35, Axial
Lager4.720
150V
200mA
1V @ 150mA
Small Signal =< 200mA (Io), Any Speed
60ns
100nA @ 120V
6pF @ 0V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
175°C (Max)
1N4004_NL
Fairchild/ON Semiconductor

DIODE GEN PURP 400V 1A DO41

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: DO-204AL, DO-41, Axial
Lager2.192
400V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 400V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-41
-55°C ~ 175°C
MBR150
ON Semiconductor

DIODE SCHOTTKY 50V 1A AXIAL

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 750mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: Axial
  • Operating Temperature - Junction: -65°C ~ 150°C
Paket: DO-204AL, DO-41, Axial
Lager4.832
50V
1A
750mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 50V
-
Through Hole
DO-204AL, DO-41, Axial
Axial
-65°C ~ 150°C
MUR115
ON Semiconductor

DIODE GEN PURP 150V 1A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 2µA @ 150V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: Axial
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: DO-204AL, DO-41, Axial
Lager4.144
150V
1A
875mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
2µA @ 150V
-
Through Hole
DO-204AL, DO-41, Axial
Axial
-65°C ~ 175°C
1PS193,115
NXP

DIODE GEN PURP 80V 215MA SMT3

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io): 215mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 500nA @ 80V
  • Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SMT3; MPAK
  • Operating Temperature - Junction: 150°C (Max)
Paket: TO-236-3, SC-59, SOT-23-3
Lager4.928
80V
215mA (DC)
1.2V @ 100mA
Fast Recovery =< 500ns, > 200mA (Io)
4ns
500nA @ 80V
1.5pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SMT3; MPAK
150°C (Max)
MUR4L40HA0G
TSC America Inc.

DIODE, HIGH EFFICIENT, 4A, 400V,

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.28V @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: 65pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: DO-201AD, Axial
Lager6.112
400V
4A
1.28V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 400V
65pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 175°C
NRVBM120ET3G
ON Semiconductor

DIODE SCHOTTKY 20V 1A POWERMITE

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 595mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500nA @ 5V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-216AA
  • Supplier Device Package: Powermite
  • Operating Temperature - Junction: -65°C ~ 150°C
Paket: DO-216AA
Lager7.312
20V
1A
595mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
500nA @ 5V
-
Surface Mount
DO-216AA
Powermite
-65°C ~ 150°C
hot SB340-E3/73
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 3A DO201AD

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 490mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 125°C
Paket: DO-201AD, Axial
Lager621.000
40V
3A
490mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
-
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 125°C
SS2PH10-M3/85A
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 2A DO220AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 800mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1µA @ 100V
  • Capacitance @ Vr, F: 65pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-220AA
  • Supplier Device Package: DO-220AA (SMP)
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: DO-220AA
Lager5.696
100V
2A
800mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
1µA @ 100V
65pF @ 4V, 1MHz
Surface Mount
DO-220AA
DO-220AA (SMP)
-55°C ~ 175°C
1N5408TA
SMC Diode Solutions

DIODE GEN PURP 1KV 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 3A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Capacitance @ Vr, F: 30pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: DO-201AD, Axial
Lager3.648
1000V
3A
1.2V @ 3A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 1000V
30pF @ 0V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 175°C
hot BAT54T-7
Diodes Incorporated

DIODE SCHOTTKY 30V 200MA SOT523

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5ns
  • Current - Reverse Leakage @ Vr: 2µA @ 25V
  • Capacitance @ Vr, F: 10pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOT-523
  • Supplier Device Package: SOT-523
  • Operating Temperature - Junction: -65°C ~ 125°C
Paket: SOT-523
Lager1.620.000
30V
200mA (DC)
1V @ 100mA
Small Signal =< 200mA (Io), Any Speed
5ns
2µA @ 25V
10pF @ 10V, 1MHz
Surface Mount
SOT-523
SOT-523
-65°C ~ 125°C
STTH30ST06WY
STMicroelectronics

DIODE HYPER 600V 30A DO247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 3.6V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-247-2 (Straight Leads)
  • Supplier Device Package: DO-247
  • Operating Temperature - Junction: -40°C ~ 175°C
Paket: DO-247-2 (Straight Leads)
Lager18.120
600V
30A
3.6V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
50µA @ 600V
-
Through Hole
DO-247-2 (Straight Leads)
DO-247
-40°C ~ 175°C
ER1K-TP
Micro Commercial Co

DIODE GEN PURP 800V 1A DO214AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Capacitance @ Vr, F: 45pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA, HSMB
  • Operating Temperature - Junction: -50°C ~ 150°C
Paket: DO-214AA, SMB
Lager29.658
800V
1A
1.35V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 800V
45pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA, HSMB
-50°C ~ 150°C
ES1BALH
Taiwan Semiconductor Corporation

35NS, 1A, 100V, SUPER FAST RECOV

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 100 V
  • Capacitance @ Vr, F: 18pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: Thin SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: -
Lager42.000
100 V
1A
950 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
1 µA @ 100 V
18pF @ 4V, 1MHz
Surface Mount
DO-221AC, SMA Flat Leads
Thin SMA
-55°C ~ 150°C
HER102-AP
Micro Commercial Co

DIODE GEN PURP 100V 1A DO41

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 5 mA @ 100 V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -55°C ~ 125°C
Paket: -
Request a Quote
100 V
1A
1.1 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
5 mA @ 100 V
20pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-41
-55°C ~ 125°C
1N4148W_R2_00001
Panjit International Inc.

SOD-123, SWITCHING

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4 ns
  • Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
  • Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: -
Request a Quote
75 V
200mA
1.25 V @ 150 mA
Small Signal =< 200mA (Io), Any Speed
4 ns
2.5 µA @ 75 V
1.5pF @ 0V, 1MHz
Surface Mount
SOD-123
SOD-123
-55°C ~ 150°C
ES2BFSH
Taiwan Semiconductor Corporation

35NS, 2A, 100V, SUPER FAST RECOV

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 100 V
  • Capacitance @ Vr, F: 28pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: SOD-128
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: -
Lager42.000
100 V
2A
950 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
1 µA @ 100 V
28pF @ 4V, 1MHz
Surface Mount
SOD-128
SOD-128
-55°C ~ 150°C
SIDC14D60E6X1SA4
Infineon Technologies

DIODE GEN PURP 600V 30A DIE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: -
Request a Quote
600 V
30A
1.25 V @ 30 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 600 V
-
Surface Mount
Die
Die
-55°C ~ 150°C
JANS1N5822US-TR
Semtech Corporation

DIODE SCHOTTKY 40V 3A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF
  • Supplier Device Package: -
  • Operating Temperature - Junction: -65°C ~ 125°C
Paket: -
Request a Quote
40 V
3A
500 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 40 V
-
Surface Mount
SQ-MELF
-
-65°C ~ 125°C
TST30U60C
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 60V 15A TO220AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 570 mV @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 60 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: -
Request a Quote
60 V
15A
570 mV @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 60 V
-
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C