Page 939 - Dioden - Gleichrichter - Einzeln | Diskrete Halbleiterprodukte

Teilenummer	Hersteller	Beschreibung	Paket	Lager	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
CDBMH340-G	Comchip Technology	DIODE SCHOTTKY 40V 3A SOD123T Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 3A (DC) Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 40V Capacitance @ Vr, F: 250pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123T Supplier Device Package: SOD-123T Operating Temperature - Junction: -55°C ~ 125°C	Paket: SOD-123T	Lager5.664	40V	3A (DC)	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 40V	250pF @ 4V, 1MHz	Surface Mount	SOD-123T	SOD-123T	-55°C ~ 125°C
RD1006LS-SB5	ON Semiconductor	DIODE GEN PURP 10A TO220FI Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220FI(LS)-SB Operating Temperature - Junction: 150°C (Max)	Paket: TO-220-2 Full Pack	Lager64.080	-	10A	1.6V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	100µA @ 600V	-	Through Hole	TO-220-2 Full Pack	TO-220FI(LS)-SB	150°C (Max)
EGP30A-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 3A GP20 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: GP20 Operating Temperature - Junction: -65°C ~ 150°C	Paket: DO-201AA, DO-27, Axial	Lager6.976	50V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 50V	-	Through Hole	DO-201AA, DO-27, Axial	GP20	-65°C ~ 150°C
1N5624GPHE3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C	Paket: DO-201AD, Axial	Lager2.064	200V	3A	1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	3µs	5µA @ 200V	40pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 175°C
BY329X-1500,127	NXP	DIODE GEN PURP 1.5KV 6A TO220F Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1500V Current - Average Rectified (Io): 6A (DC) Voltage - Forward (Vf) (Max) @ If: 1.45V @ 6.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 230ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: TO-220FP Operating Temperature - Junction: 150°C (Max)	Paket: TO-220-2 Full Pack, Isolated Tab	Lager5.952	1500V	6A (DC)	1.45V @ 6.5A	Fast Recovery =< 500ns, > 200mA (Io)	230ns	-	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	TO-220FP	150°C (Max)
CMHSH-3 BK	Central Semiconductor Corp	DIODE SCHOTTKY 30V 200MA SOD123 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 7ns Current - Reverse Leakage @ Vr: 2µA @ 25V Capacitance @ Vr, F: 7pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -65°C ~ 150°C	Paket: SOD-123	Lager2.400	30V	200mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	7ns	2µA @ 25V	7pF @ 1V, 1MHz	Surface Mount	SOD-123	SOD-123	-65°C ~ 150°C
SR802HR0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 8A, 2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 550mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 20V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 125°C	Paket: DO-201AD, Axial	Lager5.776	20V	8A	550mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
VSSB3L6S-M3/52T	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 60V 2.6A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 2.6A Voltage - Forward (Vf) (Max) @ If: 590mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.2mA @ 60V Capacitance @ Vr, F: 358pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	Paket: DO-214AA, SMB	Lager90.000	60V	2.6A	590mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.2mA @ 60V	358pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SE10PJHM3/84A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A DO220AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 780ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 175°C	Paket: DO-220AA	Lager4.976	600V	1A	1.05V @ 1A	Standard Recovery >500ns, > 200mA (Io)	780ns	5µA @ 600V	-	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 175°C
RS1MSP1-7	Diodes Incorporated	FAST RECOVERY RECTIFIER PDI123 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 10µA @ 1000V Capacitance @ Vr, F: 4pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: POWERDI?123 Supplier Device Package: PowerDI? 123 Operating Temperature - Junction: -55°C ~ 150°C	Paket: POWERDI?123	Lager3.552	1000V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	10µA @ 1000V	4pF @ 4V, 1MHz	Surface Mount	POWERDI?123	PowerDI? 123	-55°C ~ 150°C
1N5817-E3/73	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 20V 1A DO204AL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 20V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 125°C	Paket: DO-204AL, DO-41, Axial	Lager4.256	20V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 20V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 125°C
ES1BL MHG	TSC America Inc.	DIODE, SUPER FAST, 1A, 100V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 10pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	Paket: DO-219AB	Lager3.552	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	10pF @ 1V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RSFDL RQG	TSC America Inc.	DIODE, FAST, 0.5A, 200V, 150NS, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 4pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	Paket: DO-219AB	Lager7.056	200V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS16HE	Fairchild/ON Semiconductor	DIODE SCHOTTKY 60V 1A SOD323HE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 680mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 8.3ns Current - Reverse Leakage @ Vr: 50µA @ 60V Capacitance @ Vr, F: 43pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: SOD-323HE Operating Temperature - Junction: -55°C ~ 150°C	Paket: 2-SMD, Flat Lead	Lager3.232	60V	1A	680mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	8.3ns	50µA @ 60V	43pF @ 4V, 1MHz	Surface Mount	2-SMD, Flat Lead	SOD-323HE	-55°C ~ 150°C
VS-70HFR20	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 70A DO203AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 220A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 15mA @ 200V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB Operating Temperature - Junction: -65°C ~ 180°C	Paket: DO-203AB, DO-5, Stud	Lager6.252	200V	70A	1.35V @ 220A	Standard Recovery >500ns, > 200mA (Io)	-	15mA @ 200V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-65°C ~ 180°C
S3KB-13-F	Diodes Incorporated	DIODE GEN PURP 800V 3A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 800V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 150°C	Paket: DO-214AA, SMB	Lager515.100	800V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 800V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 150°C
1SS389-G	Comchip Technology	DIODE SCHOTTKY 10V 100MA SOD523 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 10V Current - Average Rectified (Io): 100mA (DC) Voltage - Forward (Vf) (Max) @ If: 500mV @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20µA @ 10V Capacitance @ Vr, F: 40pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523 Operating Temperature - Junction: -40°C ~ 100°C	Paket: SC-79, SOD-523	Lager7.616	10V	100mA (DC)	500mV @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	-	20µA @ 10V	40pF @ 0V, 1MHz	Surface Mount	SC-79, SOD-523	SOD-523	-40°C ~ 100°C
CDBU0130R	Comchip Technology	DIODE SCHOTTKY 30V 100MA 0603 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 450mV @ 10mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500nA @ 10V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: 0603C/SOD-523F Operating Temperature - Junction: 125°C (Max)	Paket: 2-SMD, No Lead	Lager1.163.160	30V	100mA	450mV @ 10mA	Small Signal =< 200mA (Io), Any Speed	-	500nA @ 10V	-	Surface Mount	2-SMD, No Lead	0603C/SOD-523F	125°C (Max)
S1PB-M3/84A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 1A DO220AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8µs Current - Reverse Leakage @ Vr: 1µA @ 100V Capacitance @ Vr, F: 6pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 150°C	Paket: DO-220AA	Lager324.000	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	1µA @ 100V	6pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 150°C
JANTX1N6775	Microchip Technology	DIODE GEN PURP 100V 15A TO257 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 800 mV Capacitance @ Vr, F: 300pF @ 5V, 1MHz Mounting Type: Through Hole Package / Case: TO-257-3 Supplier Device Package: TO-257 Operating Temperature - Junction: -65°C ~ 150°C	Paket: -	Request a Quote	100 V	15A	1.15 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 800 mV	300pF @ 5V, 1MHz	Through Hole	TO-257-3	TO-257	-65°C ~ 150°C
S8PG-M3-H	Vishay General Semiconductor - Diodes Division	8A, 400V, STD , SM RECT, SMPC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 µs Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C	Paket: -	Request a Quote	400 V	2A	1.1 V @ 8 A	Standard Recovery >500ns, > 200mA (Io)	5 µs	5 µA @ 400 V	60pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 150°C
VS-80EBU04-N4	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 400V 80A POWIRTAB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 80A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 80 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 87 ns Current - Reverse Leakage @ Vr: 50 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: PowerTab® Supplier Device Package: PowerTab® Operating Temperature - Junction: -55°C ~ 175°C	Paket: -	Request a Quote	400 V	80A	1.3 V @ 80 A	Fast Recovery =< 500ns, > 200mA (Io)	87 ns	50 µA @ 400 V	-	Through Hole	PowerTab®	PowerTab®	-55°C ~ 175°C
RB501SM-30T2R	Rohm Semiconductor	DIODE SCHOTTKY 30V 100MA EMD2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 350 mV @ 10 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 10 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: EMD2 Operating Temperature - Junction: 125°C	Paket: -	Lager18.846	30 V	100mA	350 mV @ 10 mA	Small Signal =< 200mA (Io), Any Speed	-	10 µA @ 10 V	-	Surface Mount	SC-79, SOD-523	EMD2	125°C
VS-MBR1035-M3	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 35V 10A TO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 35 V Capacitance @ Vr, F: 600pF @ 5V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 150°C	Paket: -	Lager219	35 V	10A	840 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 35 V	600pF @ 5V, 1MHz	Through Hole	TO-220-2	TO-220AC	-65°C ~ 150°C
BAT54LP-7-79	Diodes Incorporated	DIODE SCHOTTKY 30V 200MA 2DFN Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Current - Reverse Leakage @ Vr: 2 µA @ 25 V Capacitance @ Vr, F: 10pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 0402 (1006 Metric) Supplier Device Package: X1-DFN1006-2 Operating Temperature - Junction: -65°C ~ 125°C	Paket: -	Request a Quote	30 V	200mA	1 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	5 ns	2 µA @ 25 V	10pF @ 1V, 1MHz	Surface Mount	0402 (1006 Metric)	X1-DFN1006-2	-65°C ~ 125°C
CMR1-10M-BK	Central Semiconductor Corp	DIODE GEN PURP 1KV 1A SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 150°C	Paket: -	Request a Quote	1000 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 1000 V	8pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA	-65°C ~ 150°C
SSL22H	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 2A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 410 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400 µA @ 20 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 125°C	Paket: -	Request a Quote	20 V	2A	410 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	400 µA @ 20 V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 125°C
WNSC6D16650CW6Q	WeEn Semiconductors	DIODE SIL CARB 650V 16A TO247-3 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 16 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 80 µA @ 650 V Capacitance @ Vr, F: 780pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3 Operating Temperature - Junction: 175°C	Paket: -	Lager9.000	650 V	16A	1.45 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	80 µA @ 650 V	780pF @ 1V, 1MHz	Through Hole	TO-247-3	TO-247-3	175°C

CDBMH340-G

Comchip Technology

DIODE SCHOTTKY 40V 3A SOD123T

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 3A (DC)
Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 40V
Capacitance @ Vr, F: 250pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123T
Supplier Device Package: SOD-123T
Operating Temperature - Junction: -55°C ~ 125°C

Paket: SOD-123T

Lager5.664

40V

3A (DC)

500mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 40V

250pF @ 4V, 1MHz

Surface Mount

SOD-123T

-55°C ~ 125°C

RD1006LS-SB5

ON Semiconductor

DIODE GEN PURP 10A TO220FI

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 100µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: TO-220FI(LS)-SB
Operating Temperature - Junction: 150°C (Max)

Paket: TO-220-2 Full Pack

Lager64.080

-

10A

1.6V @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

100µA @ 600V

-

Through Hole

TO-220-2 Full Pack

TO-220FI(LS)-SB

150°C (Max)

EGP30A-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 3A GP20

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 150°C

Paket: DO-201AA, DO-27, Axial

Lager6.976

50V

3A

950mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 50V

-

Through Hole

DO-201AA, DO-27, Axial

GP20

-65°C ~ 150°C

1N5624GPHE3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C

Paket: DO-201AD, Axial

Lager2.064

200V

3A

1V @ 3A

Standard Recovery >500ns, > 200mA (Io)

3µs

5µA @ 200V

40pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 175°C

BY329X-1500,127

NXP

DIODE GEN PURP 1.5KV 6A TO220F

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1500V
Current - Average Rectified (Io): 6A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.45V @ 6.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 230ns
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Supplier Device Package: TO-220FP
Operating Temperature - Junction: 150°C (Max)

Paket: TO-220-2 Full Pack, Isolated Tab

Lager5.952

1500V

6A (DC)

1.45V @ 6.5A

Fast Recovery =< 500ns, > 200mA (Io)

230ns

-

Through Hole

TO-220-2 Full Pack, Isolated Tab

TO-220FP

150°C (Max)

CMHSH-3 BK

Central Semiconductor Corp

DIODE SCHOTTKY 30V 200MA SOD123

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 7ns
Current - Reverse Leakage @ Vr: 2µA @ 25V
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 150°C

Paket: SOD-123

Lager2.400

30V

200mA

1V @ 100mA

Small Signal =< 200mA (Io), Any Speed

7ns

2µA @ 25V

7pF @ 1V, 1MHz

Surface Mount

SOD-123

-65°C ~ 150°C

SR802HR0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 8A, 2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C

Paket: DO-201AD, Axial

Lager5.776

20V

8A

550mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 20V

-

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 125°C

VSSB3L6S-M3/52T

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 2.6A DO214AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 2.6A
Voltage - Forward (Vf) (Max) @ If: 590mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1.2mA @ 60V
Capacitance @ Vr, F: 358pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

Paket: DO-214AA, SMB

Lager90.000

60V

2.6A

590mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

1.2mA @ 60V

358pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

SE10PJHM3/84A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO220AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C

Paket: DO-220AA

Lager4.976

600V

1A

1.05V @ 1A

Standard Recovery >500ns, > 200mA (Io)

780ns

5µA @ 600V

-

Surface Mount

DO-220AA

DO-220AA (SMP)

-55°C ~ 175°C

RS1MSP1-7

Diodes Incorporated

FAST RECOVERY RECTIFIER PDI123

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: POWERDI?123
Supplier Device Package: PowerDI? 123
Operating Temperature - Junction: -55°C ~ 150°C

Paket: POWERDI?123

Lager3.552

1000V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

500ns

10µA @ 1000V

4pF @ 4V, 1MHz

Surface Mount

POWERDI?123

PowerDI? 123

-55°C ~ 150°C

1N5817-E3/73

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20V 1A DO204AL

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 125°C

Paket: DO-204AL, DO-41, Axial

Lager4.256

20V

1A

450mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 20V

-

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 125°C

ES1BL MHG

TSC America Inc.

DIODE, SUPER FAST, 1A, 100V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

Paket: DO-219AB

Lager3.552

100V

1A

950mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 100V

10pF @ 1V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

RSFDL RQG

TSC America Inc.

DIODE, FAST, 0.5A, 200V, 150NS,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

Paket: DO-219AB

Lager7.056

200V

500mA

1.3V @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 200V

4pF @ 4V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

SS16HE

Fairchild/ON Semiconductor

DIODE SCHOTTKY 60V 1A SOD323HE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 680mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8.3ns
Current - Reverse Leakage @ Vr: 50µA @ 60V
Capacitance @ Vr, F: 43pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: SOD-323HE
Operating Temperature - Junction: -55°C ~ 150°C

Paket: 2-SMD, Flat Lead

Lager3.232

60V

1A

680mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

8.3ns

50µA @ 60V

43pF @ 4V, 1MHz

Surface Mount

2-SMD, Flat Lead

SOD-323HE

-55°C ~ 150°C

VS-70HFR20

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 70A DO203AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 70A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 220A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 15mA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB
Operating Temperature - Junction: -65°C ~ 180°C

Paket: DO-203AB, DO-5, Stud

Lager6.252

200V

70A

1.35V @ 220A

Standard Recovery >500ns, > 200mA (Io)

-

15mA @ 200V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-203AB

-65°C ~ 180°C

S3KB-13-F

Diodes Incorporated

DIODE GEN PURP 800V 3A SMB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 800V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C

Paket: DO-214AA, SMB

Lager515.100

800V

3A

1.15V @ 3A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 800V

40pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

SMB

-65°C ~ 150°C

1SS389-G

Comchip Technology

DIODE SCHOTTKY 10V 100MA SOD523

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 10V
Current - Average Rectified (Io): 100mA (DC)
Voltage - Forward (Vf) (Max) @ If: 500mV @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20µA @ 10V
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: SOD-523
Operating Temperature - Junction: -40°C ~ 100°C

Paket: SC-79, SOD-523

Lager7.616

10V

100mA (DC)

500mV @ 100mA

Fast Recovery =< 500ns, > 200mA (Io)

-

20µA @ 10V

40pF @ 0V, 1MHz

Surface Mount

SC-79, SOD-523

SOD-523

-40°C ~ 100°C

CDBU0130R

Comchip Technology

DIODE SCHOTTKY 30V 100MA 0603

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 450mV @ 10mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500nA @ 10V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Supplier Device Package: 0603C/SOD-523F
Operating Temperature - Junction: 125°C (Max)

Paket: 2-SMD, No Lead

Lager1.163.160

30V

100mA

450mV @ 10mA

Small Signal =< 200mA (Io), Any Speed

-

500nA @ 10V

-

Surface Mount

2-SMD, No Lead

0603C/SOD-523F

125°C (Max)

S1PB-M3/84A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO220AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8µs
Current - Reverse Leakage @ Vr: 1µA @ 100V
Capacitance @ Vr, F: 6pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C

Paket: DO-220AA

Lager324.000

100V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

1.8µs

1µA @ 100V

6pF @ 4V, 1MHz

Surface Mount

DO-220AA

DO-220AA (SMP)

-55°C ~ 150°C

JANTX1N6775

Microchip Technology

DIODE GEN PURP 100V 15A TO257

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 15 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 10 µA @ 800 mV
Capacitance @ Vr, F: 300pF @ 5V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-257-3
Supplier Device Package: TO-257
Operating Temperature - Junction: -65°C ~ 150°C

Paket: -

Request a Quote

100 V

15A

1.15 V @ 15 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

10 µA @ 800 mV

300pF @ 5V, 1MHz

Through Hole

TO-257-3

TO-257

-65°C ~ 150°C

S8PG-M3-H

Vishay General Semiconductor - Diodes Division

8A, 400V, STD , SM RECT, SMPC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C

Paket: -

Request a Quote

400 V

2A

1.1 V @ 8 A

Standard Recovery >500ns, > 200mA (Io)

5 µs

5 µA @ 400 V

60pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 150°C

VS-80EBU04-N4

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 400V 80A POWIRTAB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 80A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 80 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 87 ns
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: PowerTab®
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 175°C

Paket: -

Request a Quote

400 V

80A

1.3 V @ 80 A

Fast Recovery =< 500ns, > 200mA (Io)

87 ns

50 µA @ 400 V

-

Through Hole

PowerTab®

-55°C ~ 175°C

RB501SM-30T2R

Rohm Semiconductor

DIODE SCHOTTKY 30V 100MA EMD2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 10 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 10 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: EMD2
Operating Temperature - Junction: 125°C

Paket: -

Lager18.846

30 V

100mA

350 mV @ 10 mA

Small Signal =< 200mA (Io), Any Speed

-

10 µA @ 10 V

-

Surface Mount

SC-79, SOD-523

EMD2

125°C

VS-MBR1035-M3

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 35V 10A TO220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
Capacitance @ Vr, F: 600pF @ 5V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C

Paket: -

Lager219

35 V

10A

840 mV @ 20 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 35 V

600pF @ 5V, 1MHz

Through Hole

TO-220-2

TO-220AC

-65°C ~ 150°C

BAT54LP-7-79

Diodes Incorporated

DIODE SCHOTTKY 30V 200MA 2DFN

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 125°C

Paket: -

Request a Quote

30 V

200mA

1 V @ 100 mA

Small Signal =< 200mA (Io), Any Speed

5 ns

2 µA @ 25 V

10pF @ 1V, 1MHz

Surface Mount

0402 (1006 Metric)

X1-DFN1006-2

-65°C ~ 125°C

CMR1-10M-BK

Central Semiconductor Corp

DIODE GEN PURP 1KV 1A SMA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C

Paket: -

Request a Quote

1000 V

1A

1.1 V @ 1 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 1000 V

8pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

SMA

-65°C ~ 150°C

SSL22H

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 20V 2A DO214AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400 µA @ 20 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C

Paket: -

Request a Quote

20 V

2A

410 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

400 µA @ 20 V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 125°C

WNSC6D16650CW6Q

WeEn Semiconductors

DIODE SIL CARB 650V 16A TO247-3

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 16 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
Capacitance @ Vr, F: 780pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C

Paket: -

Lager9.000

650 V

16A

1.45 V @ 16 A

No Recovery Time > 500mA (Io)

0 ns

80 µA @ 650 V

780pF @ 1V, 1MHz

Through Hole

TO-247-3

175°C