Page 44 - Transistoren - Bipolar (BJT) - HF | Diskrete Halbleiterprodukte | Heisener Electronics
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Transistoren - Bipolar (BJT) - HF

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Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BFP 640 H6433
Infineon Technologies

TRANS RF NPN 4V 50MA SOT343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4.5V
  • Frequency - Transition: 40GHz
  • Noise Figure (dB Typ @ f): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
  • Gain: 24dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
Paket: SC-82A, SOT-343
Lager2.656
4.5V
40GHz
0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
24dB
200mW
110 @ 30mA, 3V
50mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
PG-SOT343-4
BFP196WE6327HTSA1
Infineon Technologies

TRANSISTOR NPN RF 12V SOT-343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7.5GHz
  • Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
  • Gain: 12.5dB ~ 19dB
  • Power - Max: 700mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V
  • Current - Collector (Ic) (Max): 150mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
Paket: SC-82A, SOT-343
Lager6.416
12V
7.5GHz
1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
12.5dB ~ 19dB
700mW
70 @ 50mA, 8V
150mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
PG-SOT343-4
BFP540E6327BTSA1
Infineon Technologies

TRANSISTOR RF NPN 4.5V SOT-343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 30GHz
  • Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
  • Gain: 21.5dB
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
Paket: SC-82A, SOT-343
Lager3.504
5V
30GHz
0.9dB ~ 1.4dB @ 1.8GHz
21.5dB
250mW
50 @ 20mA, 3.5V
80mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
PG-SOT343-4
MRF8372
Microsemi Corporation

TRANS NPN 16V 200MA SO8

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 16V
  • Frequency - Transition: 870MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8dB ~ 9.5dB
  • Power - Max: 2.2W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 200mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager4.496
16V
870MHz
-
8dB ~ 9.5dB
2.2W
30 @ 50mA, 5V
200mA
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot NE202930-T1-A
CEL

RF TRANSISTOR NPN SOT-323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 11GHz
  • Noise Figure (dB Typ @ f): 1.15dB @ 1GHz
  • Gain: 13.5dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 5mA, 5V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
Paket: SC-70, SOT-323
Lager2.000
6V
11GHz
1.15dB @ 1GHz
13.5dB
150mW
85 @ 5mA, 5V
100mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323
hot MRF517
Microsemi Corporation

TRANS RF BIPO 2.5W 150MA TO39

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 4GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 9dB ~ 10dB
  • Power - Max: 2.5W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 60mA, 10V
  • Current - Collector (Ic) (Max): 150mA
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
Paket: TO-205AD, TO-39-3 Metal Can
Lager7.680
20V
4GHz
-
9dB ~ 10dB
2.5W
50 @ 60mA, 10V
150mA
-
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39
SD1013-03
Microsemi Corporation

TRANS RF BIPO 13W 1A M113

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 35V
  • Frequency - Transition: 150MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 10dB
  • Power - Max: 13W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V
  • Current - Collector (Ic) (Max): 1A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M113
  • Supplier Device Package: M113
Paket: M113
Lager6.240
35V
150MHz
-
10dB
13W
10 @ 200mA, 5V
1A
200°C (TJ)
Chassis Mount
M113
M113
UTV020
Microsemi Corporation

TRANS RF BIPO 17W 1.2A 55FT-6

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 470MHz ~ 860MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 12dB
  • Power - Max: 17W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 250mA, 5V
  • Current - Collector (Ic) (Max): 1.2A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: 55FT
  • Supplier Device Package: 55FT
Paket: 55FT
Lager3.360
25V
470MHz ~ 860MHz
-
12dB
17W
10 @ 250mA, 5V
1.2A
200°C (TJ)
Chassis, Stud Mount
55FT
55FT
AT-42000-GP4
Broadcom Limited

TRANSISTOR NPN BIPOLAR CHIP

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.9dB ~ 3dB @ 2GHz ~ 4GHz
  • Gain: 10.5dB ~ 14dB
  • Power - Max: 600mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 35mA, 8V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Chip
Paket: Die
Lager6.048
12V
9GHz
1.9dB ~ 3dB @ 2GHz ~ 4GHz
10.5dB ~ 14dB
600mW
30 @ 35mA, 8V
80mA
200°C (TJ)
Surface Mount
Die
Chip
NE677M04-T2-A
CEL

RF TRANSISTOR NPN SOT-343F

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 15GHz
  • Noise Figure (dB Typ @ f): 1.7dB @ 2GHz
  • Gain: 16dB
  • Power - Max: 205mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 20mA, 3V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: SOT-343F
Paket: SOT-343F
Lager2.528
6V
15GHz
1.7dB @ 2GHz
16dB
205mW
75 @ 20mA, 3V
50mA
150°C (TJ)
Surface Mount
SOT-343F
SOT-343F
KSC2786YBU
Fairchild/ON Semiconductor

TRANSISTOR NPN 20V 20MA TO-92S

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 600MHz
  • Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz
  • Gain: 18dB ~ 22dB
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Short Body
  • Supplier Device Package: TO-92S
Paket: TO-226-3, TO-92-3 Short Body
Lager4.752
20V
600MHz
3dB ~ 5dB @ 100MHz
18dB ~ 22dB
250mW
120 @ 1mA, 6V
20mA
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Short Body
TO-92S
ZTX325STOB
Diodes Incorporated

TRANSISTOR RF NPN E-LINE

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1.3GHz
  • Noise Figure (dB Typ @ f): 5dB @ 500MHz
  • Gain: 53dB
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 1V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: E-Line-3, Formed Leads
  • Supplier Device Package: E-Line (TO-92 compatible)
Paket: E-Line-3, Formed Leads
Lager2.176
15V
1.3GHz
5dB @ 500MHz
53dB
350mW
25 @ 2mA, 1V
50mA
-55°C ~ 200°C (TJ)
Through Hole
E-Line-3, Formed Leads
E-Line (TO-92 compatible)
NE68033-A
CEL

RF TRANSISTOR NPN SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
  • Gain: 9dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
Paket: TO-236-3, SC-59, SOT-23-3
Lager7.520
10V
10GHz
1.8dB @ 2GHz
9dB
200mW
50 @ 10mA, 6V
35mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
hot 2SC24040CL
Panasonic Electronic Components

TRANS NPN 20VCEO 15MA MINI-3P

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 650MHz
  • Noise Figure (dB Typ @ f): 3.3dB @ 100MHz
  • Gain: 24dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 6V
  • Current - Collector (Ic) (Max): 15mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: Mini3-G1
Paket: TO-236-3, SC-59, SOT-23-3
Lager33.840
20V
650MHz
3.3dB @ 100MHz
24dB
150mW
65 @ 1mA, 6V
15mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
Mini3-G1
NE46134-T1
CEL

TRANS NPN 1GHZ SOT-89

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 5.5GHz
  • Noise Figure (dB Typ @ f): 1.5dB ~ 2dB @ 500MHz ~ 1GHz
  • Gain: -
  • Power - Max: 2W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 10V
  • Current - Collector (Ic) (Max): 250mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
Paket: TO-243AA
Lager3.344
15V
5.5GHz
1.5dB ~ 2dB @ 500MHz ~ 1GHz
-
2W
40 @ 50mA, 10V
250mA
150°C (TJ)
Surface Mount
TO-243AA
SOT-89
1214-150L
Microsemi Corporation

TRANS BIPO 55ST-1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.2GHz ~ 1.4GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7.15dB ~ 8.7dB
  • Power - Max: 320W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
  • Current - Collector (Ic) (Max): 15A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55ST-1
  • Supplier Device Package: 55ST-1
Paket: 55ST-1
Lager6.992
65V
1.2GHz ~ 1.4GHz
-
7.15dB ~ 8.7dB
320W
20 @ 1A, 5V
15A
200°C (TJ)
Chassis Mount
55ST-1
55ST-1
MS2421
Microsemi Corporation

TRANS RF BIPO 875W 22A M103

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.025GHz ~ 1.15GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 6.3dB
  • Power - Max: 875W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
  • Current - Collector (Ic) (Max): 22A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M103
  • Supplier Device Package: M103
Paket: M103
Lager7.232
65V
1.025GHz ~ 1.15GHz
-
6.3dB
875W
10 @ 500mA, 5V
22A
200°C (TJ)
Chassis Mount
M103
M103
1014-12
Microsemi Corporation

TRANS RF BIPO 39W 5A 55LT1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Frequency - Transition: 1GHz ~ 1.4GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 6.8dB
  • Power - Max: 39W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V
  • Current - Collector (Ic) (Max): 5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55LT
  • Supplier Device Package: 55LT
Paket: 55LT
Lager7.008
50V
1GHz ~ 1.4GHz
-
6.8dB
39W
10 @ 200mA, 5V
5A
200°C (TJ)
Chassis Mount
55LT
55LT
MS1509
Microsemi Corporation

TRANS RF BIPO 260W 15A M168

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 33V
  • Frequency - Transition: 500MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 5.5dBi
  • Power - Max: 260W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1mA, 5V
  • Current - Collector (Ic) (Max): 15A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M168
  • Supplier Device Package: M168
Paket: M168
Lager4.848
33V
500MHz
-
5.5dBi
260W
20 @ 1mA, 5V
15A
200°C (TJ)
Chassis Mount
M168
M168
BFU530XRVL
NXP

TRANS RF NPN 12V 40MA SOT-143R

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 11GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
  • Gain: 16.5dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 8V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-143R
  • Supplier Device Package: SOT-143R
Paket: SOT-143R
Lager5.728
12V
11GHz
1.1dB @ 1.8GHz
16.5dB
450mW
60 @ 10mA, 8V
40mA
-40°C ~ 150°C (TJ)
Surface Mount
SOT-143R
SOT-143R
MRF10150
M/A-Com Technology Solutions

TRANS NPN 150W 1025MHZ-1050MHZ

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 10dB
  • Power - Max: 150W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
  • Current - Collector (Ic) (Max): 14A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 376B-02
  • Supplier Device Package: 376B-02, Style 1
Paket: 376B-02
Lager6.576
65V
-
-
10dB
150W
20 @ 5A, 5V
14A
200°C (TJ)
Chassis Mount
376B-02
376B-02, Style 1
MT3S20TU(TE85L)
Toshiba Semiconductor and Storage

TRANS RF NPN 7GHZ 80MA UFM

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1.45dB @ 20mA, 5V
  • Gain: 12dB
  • Power - Max: 900mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, Flat Leads
  • Supplier Device Package: UFM
Paket: 3-SMD, Flat Leads
Lager7.936
12V
7GHz
1.45dB @ 20mA, 5V
12dB
900mW
100 @ 50mA, 5V
80mA
150°C (TJ)
Surface Mount
3-SMD, Flat Leads
UFM
BFU530R
NXP

TRANS RF NPN 12V 40MA SOT-143B

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 11GHz
  • Noise Figure (dB Typ @ f): 0.6dB @ 900MHz
  • Gain: 21.5dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 8V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143B
Paket: TO-253-4, TO-253AA
Lager7.376
12V
11GHz
0.6dB @ 900MHz
21.5dB
450mW
60 @ 10mA, 8V
40mA
-40°C ~ 150°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143B
BFS17WH6327XTSA1
Infineon Technologies

TRANS RF NPN 15V 25MA SOT323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1.4GHz
  • Noise Figure (dB Typ @ f): 3.5dB ~ 5dB @ 800MHz
  • Gain: -
  • Power - Max: 280mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
Paket: SC-70, SOT-323
Lager90.588
15V
1.4GHz
3.5dB ~ 5dB @ 800MHz
-
280mW
40 @ 2mA, 1V
25mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
PG-SOT323-3
PH2729-65M
MACOM Technology Solutions

TRANSISTOR,BIPOLAR,65W,36V,2.70-

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 2.7GHz ~ 2.9GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8.5dB
  • Power - Max: 330W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 8A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 2L-FLG
  • Supplier Device Package: 2L-FLG
Paket: -
Request a Quote
65V
2.7GHz ~ 2.9GHz
-
8.5dB
330W
-
8A
200°C (TJ)
Chassis Mount
2L-FLG
2L-FLG
MRF5812M
Microsemi Corporation

TRANS NPN 15V 200MA

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
2SC2735JTR-E
Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSTR NPN

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 1.2GHz
  • Noise Figure (dB Typ @ f): 6.5dB @ 200MHz
  • Gain: 21dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: 3-MPAK
Paket: -
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20V
1.2GHz
6.5dB @ 200MHz
21dB
150mW
40 @ 10mA, 10V
50mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
3-MPAK
BFP196WH6740
Infineon Technologies

RF TRANSISTOR, L BAND, NPN

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7.5GHz
  • Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
  • Gain: 19dB
  • Power - Max: 700mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V
  • Current - Collector (Ic) (Max): 150mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4-1
Paket: -
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12V
7.5GHz
1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
19dB
700mW
70 @ 50mA, 8V
150mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
PG-SOT343-4-1