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Transistoren - Bipolar (BJT) - HF

Aufzeichnungen 1.633
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Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BFP450E6433BTMA1
Infineon Technologies

TRANSISTOR NPN RF 4.5V SOT-343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 24GHz
  • Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
  • Gain: 15.5dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 4V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
Paket: SC-82A, SOT-343
Lager2.384
5V
24GHz
1.25dB @ 1.8GHz
15.5dB
450mW
60 @ 50mA, 4V
100mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
PG-SOT343-4
BFP420E6327BTSA1
Infineon Technologies

TRANS NPN RF 4.5V SOT-343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 25GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
  • Gain: 21dB
  • Power - Max: 160mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
Paket: SC-82A, SOT-343
Lager3.776
5V
25GHz
1.1dB @ 1.8GHz
21dB
160mW
60 @ 20mA, 4V
35mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
PG-SOT343-4
NE67718-T1-A
CEL

RF TRANSISTOR NPN SOT-343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 15GHz
  • Noise Figure (dB Typ @ f): 1.7dB @ 2GHz
  • Gain: 15dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 20mA, 3V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: SOT-343
Paket: SC-82A, SOT-343
Lager6.128
6V
15GHz
1.7dB @ 2GHz
15dB
200mW
75 @ 20mA, 3V
50mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
SOT-343
MS2321
Microsemi Corporation

TRANS RF BIPO 87.5W 1.5A M104

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.025GHz ~ 1.15GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 10dB
  • Power - Max: 87.5W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 1.5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M105
  • Supplier Device Package: M105
Paket: M105
Lager2.768
65V
1.025GHz ~ 1.15GHz
-
10dB
87.5W
-
1.5A
200°C (TJ)
Chassis Mount
M105
M105
2225-4L
Microsemi Corporation

TRANS RF BIPO 10W 600MA 55LV1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Frequency - Transition: 2.2GHz ~ 2.5GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8.5dB
  • Power - Max: 10W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 5V
  • Current - Collector (Ic) (Max): 600mA
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55LV
  • Supplier Device Package: 55LV
Paket: 55LV
Lager3.712
40V
2.2GHz ~ 2.5GHz
-
8.5dB
10W
20 @ 200mA, 5V
600mA
200°C (TJ)
Chassis Mount
55LV
55LV
NE68030-T1-R45-A
CEL

RF TRANSISTOR NPN SOT-323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 1.9dB @ 2GHz
  • Gain: 9.4dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 5mA, 3V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
Paket: SC-70, SOT-323
Lager2.720
10V
10GHz
1.9dB @ 2GHz
9.4dB
150mW
125 @ 5mA, 3V
35mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323
MRF555T
Microsemi Corporation

TRANS NPN 16V 500MA POWERMACRO

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 16V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 11dB ~ 12.5dB
  • Power - Max: 3W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 500mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: Power Macro
  • Supplier Device Package: Power Macro
Paket: Power Macro
Lager2.192
16V
-
-
11dB ~ 12.5dB
3W
50 @ 100mA, 5V
500mA
-
Surface Mount
Power Macro
Power Macro
PN3563_D74Z
Fairchild/ON Semiconductor

TRANS RF NPN 15V 50MA TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1.5GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 14dB ~ 26dB
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
Paket: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Lager7.088
15V
1.5GHz
-
14dB ~ 26dB
350mW
20 @ 8mA, 10V
50mA
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
BF959ZL1
ON Semiconductor

TRANS RF NPN 20V 100MA TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 700MHz
  • Noise Figure (dB Typ @ f): 3dB @ 200MHz
  • Gain: -
  • Power - Max: 625mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
Paket: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Lager6.416
20V
700MHz
3dB @ 200MHz
-
625mW
40 @ 20mA, 10V
100mA
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
hot CA3127M
Intersil

TRANSISTOR ARRAY NPN 16-SOIC

  • Transistor Type: 5 NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1.15GHz
  • Noise Figure (dB Typ @ f): 3.5dB @ 100MHz
  • Gain: 27dB ~ 30dB
  • Power - Max: 85mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 6V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
Paket: 16-SOIC (0.154", 3.90mm Width)
Lager3.536
15V
1.15GHz
3.5dB @ 100MHz
27dB ~ 30dB
85mW
35 @ 5mA, 6V
20mA
150°C (TJ)
Surface Mount
16-SOIC (0.154", 3.90mm Width)
16-SOIC
KSC2786YTA
Fairchild/ON Semiconductor

TRANSISTOR NPN 20V 20MA TO-92S

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 600MHz
  • Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz
  • Gain: 18dB ~ 22dB
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
  • Supplier Device Package: TO-92S
Paket: TO-226-3, TO-92-3 Short Body (Formed Leads)
Lager6.928
20V
600MHz
3dB ~ 5dB @ 100MHz
18dB ~ 22dB
250mW
120 @ 1mA, 6V
20mA
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Short Body (Formed Leads)
TO-92S
hot KSC3123YMTF
Fairchild/ON Semiconductor

TRANSISTOR NPN 20V 50MA SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 1.4GHz
  • Noise Figure (dB Typ @ f): 3.8dB ~ 5.5dB @ 200MHz
  • Gain: 20dB ~ 23dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
Paket: TO-236-3, SC-59, SOT-23-3
Lager432.000
20V
1.4GHz
3.8dB ~ 5.5dB @ 200MHz
20dB ~ 23dB
150mW
120 @ 5mA, 10V
50mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
hot MPSH17
ON Semiconductor

TRANS NPN RF SS 15V TO92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 800MHz
  • Noise Figure (dB Typ @ f): 6dB @ 200MHz
  • Gain: 24dB
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 5mA, 10V
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
Paket: TO-226-3, TO-92-3 (TO-226AA)
Lager36.000
15V
800MHz
6dB @ 200MHz
24dB
350mW
25 @ 5mA, 10V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
BFQ67,215
NXP

TRANS NPN 50MA 10V 8GHZ SOT23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1.3dB ~ 3dB @ 1GHz ~ 2GHz
  • Gain: -
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 5V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
Paket: TO-236-3, SC-59, SOT-23-3
Lager7.184
10V
8GHz
1.3dB ~ 3dB @ 1GHz ~ 2GHz
-
300mW
60 @ 15mA, 5V
50mA
175°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
MS2422
Microsemi Corporation

TRANS RF BIPO 875W 22A M138

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 960MHz ~ 1.215GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 6.3dB
  • Power - Max: 875W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
  • Current - Collector (Ic) (Max): 22A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M138
  • Supplier Device Package: M138
Paket: M138
Lager5.552
65V
960MHz ~ 1.215GHz
-
6.3dB
875W
10 @ 1A, 5V
22A
200°C (TJ)
Chassis Mount
M138
M138
2SC5415AE-TD-E
ON Semiconductor

TRANS NPN BIPO HI FREQ PCP

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 6.7GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
  • Gain: 9dB
  • Power - Max: 800mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 30mA, 5V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: PCP
Paket: TO-243AA
Lager5.136
12V
6.7GHz
1.1dB @ 1GHz
9dB
800mW
90 @ 30mA, 5V
100mA
150°C (TJ)
Surface Mount
TO-243AA
PCP
BFU530WF
NXP

TRANS RF NPN 12V 40MA SOT-323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 11GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
  • Gain: 12.5dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 8V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323-3
Paket: SC-70, SOT-323
Lager6.752
12V
11GHz
1.1dB @ 1.8GHz
12.5dB
450mW
60 @ 10mA, 8V
40mA
-40°C ~ 150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323-3
NSVMMBTH10LT1G
ON Semiconductor

TRANS SS VHF MIXER NPN 25V SOT23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 650MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 225mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
Paket: TO-236-3, SC-59, SOT-23-3
Lager5.504
25V
650MHz
-
-
225mW
60 @ 4mA, 10V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
NE664M04-T2-A
CEL

RF TRANSISTOR NPN SOT-343F

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 20GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 12dB
  • Power - Max: 735mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 3V
  • Current - Collector (Ic) (Max): 500mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: SOT-343F
Paket: SOT-343F
Lager5.136
5V
20GHz
-
12dB
735mW
40 @ 100mA, 3V
500mA
150°C (TJ)
Surface Mount
SOT-343F
SOT-343F
PH1090-175L
M/A-Com Technology Solutions

TRANSISTOR BIPOLAR 175W 1090MHZ

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 8.58dB
  • Power - Max: 188W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 10.5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Lager3.904
80V
-
-
8.58dB
188W
-
10.5A
200°C (TJ)
Chassis Mount
-
-
2SC5085-O(TE85L,F)
Toshiba Semiconductor and Storage

TRANS RF NPN 12V 1MHZ USM

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1dB @ 500MHz
  • Gain: -
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: USM
Paket: SC-70, SOT-323
Lager5.664
12V
7GHz
1dB @ 500MHz
-
100mW
80 @ 20mA, 10V
80mA
125°C (TJ)
Surface Mount
SC-70, SOT-323
USM
hot MMBTH10LT1G
ON Semiconductor

TRANS SS VHF MIXER NPN 25V SOT23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 650MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 225mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
Paket: TO-236-3, SC-59, SOT-23-3
Lager2.540.220
25V
650MHz
-
-
225mW
60 @ 4mA, 10V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
MPSH17-D26Z
Fairchild Semiconductor

TRANS NPN 15V TO-92

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
2SC5455-A
CEL

RF TRANS NPN 6V 12GHZ SOT143

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 12GHz
  • Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
  • Gain: 10dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 30mA, 3V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: -
Paket: -
Request a Quote
6V
12GHz
1.5dB @ 2GHz
10dB
200mW
75 @ 30mA, 3V
100mA
150°C (TJ)
Surface Mount
TO-253-4, TO-253AA
-
SS9018HBU-FS
Fairchild Semiconductor

RF 0.05A, VERY HIGH FREQUENCY BA

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1.1GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 400mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 28 @ 1mA, 5V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
Paket: -
Request a Quote
15V
1.1GHz
-
-
400mW
28 @ 1mA, 5V
50mA
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
PH1214-220M
MACOM Technology Solutions

TRANSISTOR,220W,1.2-1.4GHZ,150US

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 70V
  • Frequency - Transition: 1.4GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7.4dB
  • Power - Max: 700W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 21A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 2L-FLG
  • Supplier Device Package: 2L-FLG
Paket: -
Request a Quote
70V
1.4GHz
-
7.4dB
700W
-
21A
200°C (TJ)
Chassis Mount
2L-FLG
2L-FLG
MAPR-001090-350S00
MACOM Technology Solutions

TRANSISTOR,350WPK,1.09GHZ

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 9dB
  • Power - Max: 1100W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 25A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 2L-FLG
  • Supplier Device Package: 2L-FLG
Paket: -
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65V
-
-
9dB
1100W
-
25A
200°C (TJ)
Chassis Mount
2L-FLG
2L-FLG
MSC1450A
Microsemi Corporation

RF TRANS 65V M216

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 7dB
  • Power - Max: 910W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V
  • Current - Collector (Ic) (Max): 28A
  • Operating Temperature: 250°C
  • Mounting Type: Chassis Mount
  • Package / Case: M216
  • Supplier Device Package: M216
Paket: -
Request a Quote
65V
-
-
7dB
910W
15 @ 1A, 5V
28A
250°C
Chassis Mount
M216
M216