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Transistoren - Bipolar (BJT) - HF

Aufzeichnungen 1.633
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Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BFR 183W E6327
Infineon Technologies

TRANSISTOR NPN RF 12V SOT-323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
  • Gain: 18.5dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
Paket: SC-70, SOT-323
Lager5.328
12V
8GHz
0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
18.5dB
450mW
70 @ 15mA, 8V
65mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
PG-SOT323-3
PH3134-11S
M/A-Com Technology Solutions

TRANSISTOR 11W 36V 3.10-3.40GHZ

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 8dB
  • Power - Max: 11W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 1.3A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Lager5.568
60V
-
-
8dB
11W
-
1.3A
200°C (TJ)
Chassis Mount
-
-
hot 2N4427
Microsemi Corporation

TRANS RF NPN 1W 400MA TO39

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Frequency - Transition: 500MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 10dB @ 175MHz
  • Power - Max: 1W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 400mA
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
Paket: TO-205AD, TO-39-3 Metal Can
Lager61.800
40V
500MHz
-
10dB @ 175MHz
1W
10 @ 100mA, 5V
400mA
-
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39
NE68033-T1B-R45-A
CEL

RF TRANSISTOR NPN SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
  • Gain: 9dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 10mA, 6V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
Paket: TO-236-3, SC-59, SOT-23-3
Lager3.504
10V
10GHz
1.8dB @ 2GHz
9dB
200mW
125 @ 10mA, 6V
35mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
MPSH81_D75Z
Fairchild/ON Semiconductor

TRANS RF PNP 20V 50MA TO-92

  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 600MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
Paket: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Lager3.728
20V
600MHz
-
-
350mW
60 @ 5mA, 10V
50mA
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
hot START405TR
STMicroelectronics

TRANS RF NPN SILICON SOT-343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4.5V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
  • Gain: 19dB
  • Power - Max: 45mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 4V
  • Current - Collector (Ic) (Max): 10mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: -
Paket: SC-82A, SOT-343
Lager396.000
4.5V
-
1.1dB @ 1.8GHz
19dB
45mW
160 @ 5mA, 4V
10mA
-
Surface Mount
SC-82A, SOT-343
-
AT-41533-TR2G
Broadcom Limited

TRANS NPN BIPO 12V 50MA SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 2.4GHz
  • Gain: 9dB ~ 14.5dB
  • Power - Max: 225mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
Paket: TO-236-3, SC-59, SOT-23-3
Lager3.136
12V
-
1dB ~ 1.6dB @ 900MHz ~ 2.4GHz
9dB ~ 14.5dB
225mW
30 @ 5mA, 5V
50mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
NE68018-T1-A
CEL

RF TRANSISTOR NPN SOT-343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
  • Gain: 10.2dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: SOT-343
Paket: SC-82A, SOT-343
Lager2.544
10V
10GHz
1.8dB @ 2GHz
10.2dB
150mW
50 @ 10mA, 6V
35mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
SOT-343
NE52418-A
CEL

IC AMP HBT GAAS LN 4-SMINI

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 1dB ~ 1.5dB @ 2GHz
  • Gain: 14dB ~ 16dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 3mA, 2V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: 4-Super Mini Mold
Paket: SC-82A, SOT-343
Lager3.120
5V
-
1dB ~ 1.5dB @ 2GHz
14dB ~ 16dB
150mW
100 @ 3mA, 2V
40mA
125°C (TJ)
Surface Mount
SC-82A, SOT-343
4-Super Mini Mold
hot KSC2786RBU
Fairchild/ON Semiconductor

TRANSISTOR NPN 20V 20MA TO-92S

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 600MHz
  • Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz
  • Gain: 18dB ~ 22dB
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 6V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Short Body
  • Supplier Device Package: TO-92S
Paket: TO-226-3, TO-92-3 Short Body
Lager276.000
20V
600MHz
3dB ~ 5dB @ 100MHz
18dB ~ 22dB
250mW
40 @ 1mA, 6V
20mA
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Short Body
TO-92S
hot AT-41486-BLKG
Broadcom Limited

TRANS SIL LOW NOISE BIPOL 45MD

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1.4dB ~ 3dB @ 1GHz ~ 4GHz
  • Gain: 9dB ~ 18dB
  • Power - Max: 500mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 8V
  • Current - Collector (Ic) (Max): 60mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-86
  • Supplier Device Package: 86 Plastic
Paket: SOT-86
Lager5.232
12V
8GHz
1.4dB ~ 3dB @ 1GHz ~ 4GHz
9dB ~ 18dB
500mW
30 @ 10mA, 8V
60mA
150°C (TJ)
Surface Mount
SOT-86
86 Plastic
BFS17A,215
NXP

TRANS NPN 25MA 15V 3GHZ SOT23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 2.8GHz
  • Noise Figure (dB Typ @ f): 2.5dB @ 800MHz
  • Gain: -
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 1V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
Paket: TO-236-3, SC-59, SOT-23-3
Lager4.320
15V
2.8GHz
2.5dB @ 800MHz
-
300mW
25 @ 2mA, 1V
25mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
BFG310W/XR,115
NXP

TRANS NPN 6V 10MA 14GHZ SOT343R

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 14GHz
  • Noise Figure (dB Typ @ f): 1dB @ 2GHz
  • Gain: 18dB
  • Power - Max: 60mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 3V
  • Current - Collector (Ic) (Max): 10mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: CMPAK-4
Paket: SC-82A, SOT-343
Lager3.568
6V
14GHz
1dB @ 2GHz
18dB
60mW
60 @ 5mA, 3V
10mA
175°C (TJ)
Surface Mount
SC-82A, SOT-343
CMPAK-4
BFR505,215
NXP

TRANS NPN 15V 9GHZ SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.2dB ~ 2.1dB @ 900MHz
  • Gain: -
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 6V
  • Current - Collector (Ic) (Max): 18mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
Paket: TO-236-3, SC-59, SOT-23-3
Lager5.392
15V
9GHz
1.2dB ~ 2.1dB @ 900MHz
-
150mW
60 @ 5mA, 6V
18mA
175°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
BFG590/X,215
NXP

TRANS RF NPN 15V 5GHZ SOT143B

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 400mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 70mA, 8V
  • Current - Collector (Ic) (Max): 200mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143B
Paket: TO-253-4, TO-253AA
Lager5.184
15V
5GHz
-
-
400mW
60 @ 70mA, 8V
200mA
175°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143B
1214-370M
Microsemi Corporation

TRANS RF BIPO 600W 25A 55ST1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 75V
  • Frequency - Transition: 1.2GHz ~ 1.4GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8.7dB ~ 9dB
  • Power - Max: 600W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
  • Current - Collector (Ic) (Max): 25A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55ST
  • Supplier Device Package: 55ST
Paket: 55ST
Lager3.424
75V
1.2GHz ~ 1.4GHz
-
8.7dB ~ 9dB
600W
10 @ 5A, 5V
25A
200°C (TJ)
Chassis Mount
55ST
55ST
1214-220M
Microsemi Corporation

TRANS RF BIPO 700W 20A 55ST1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 70V
  • Frequency - Transition: 1.2GHz ~ 1.4GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7.4dB
  • Power - Max: 700W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
  • Current - Collector (Ic) (Max): 20A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55ST
  • Supplier Device Package: 55ST
Paket: 55ST
Lager6.864
70V
1.2GHz ~ 1.4GHz
-
7.4dB
700W
10 @ 1A, 5V
20A
200°C (TJ)
Chassis Mount
55ST
55ST
hot MS2207
Microsemi Corporation

TRANS RF BIPO 24A 65V M216

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.09GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8dB
  • Power - Max: 880W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
  • Current - Collector (Ic) (Max): 24A
  • Operating Temperature: 250°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M216
  • Supplier Device Package: M216
Paket: M216
Lager6.352
65V
1.09GHz
-
8dB
880W
10 @ 5A, 5V
24A
250°C (TJ)
Chassis Mount
M216
M216
MS1226
Microsemi Corporation

TRANS BIPO NPN M113

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 36V
  • Frequency - Transition: 30MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 18dB
  • Power - Max: 80W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
  • Current - Collector (Ic) (Max): 4.5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M113
  • Supplier Device Package: M113
Paket: M113
Lager7.824
36V
30MHz
-
18dB
80W
10 @ 500mA, 5V
4.5A
200°C (TJ)
Chassis Mount
M113
M113
2SC4915-Y,LF
Toshiba Semiconductor and Storage

TRANS RF NPN 30V 550MHZ SSM

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: 550MHz
  • Noise Figure (dB Typ @ f): 2.3dB ~ 5dB @ 100MHz
  • Gain: 17dB ~ 23dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SSM
Paket: SC-75, SOT-416
Lager4.400
30V
550MHz
2.3dB ~ 5dB @ 100MHz
17dB ~ 23dB
100mW
100 @ 1mA, 6V
20mA
125°C (TJ)
Surface Mount
SC-75, SOT-416
SSM
BFP640H6327XTSA1
Infineon Technologies

TRANS RF NPN 4V 50MA SOT343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4.5V
  • Frequency - Transition: 40GHz
  • Noise Figure (dB Typ @ f): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
  • Gain: 12.5dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
Paket: SC-82A, SOT-343
Lager26.490
4.5V
40GHz
0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
12.5dB
200mW
110 @ 30mA, 3V
50mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
PG-SOT343-4
hot 2N918
Central Semiconductor Corp

TRANS RF NPN 15V 50MA TO-72

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 600MHz
  • Noise Figure (dB Typ @ f): 6dB @ 60kHz
  • Gain: -
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AF, TO-72-4 Metal Can
  • Supplier Device Package: TO-72
Paket: TO-206AF, TO-72-4 Metal Can
Lager41.412
15V
600MHz
6dB @ 60kHz
-
200mW
20 @ 3mA, 1V
50mA
-65°C ~ 200°C (TJ)
Through Hole
TO-206AF, TO-72-4 Metal Can
TO-72
BFU710F,115
NXP

TRANSISTOR NPN SOT343F

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 2.8V
  • Frequency - Transition: 43GHz
  • Noise Figure (dB Typ @ f): 0.85dB ~ 1.45dB @ 5.8GHz ~ 12GHz
  • Gain: -
  • Power - Max: 136mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 2V
  • Current - Collector (Ic) (Max): 10mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: 4-DFP
Paket: SOT-343F
Lager28.980
2.8V
43GHz
0.85dB ~ 1.45dB @ 5.8GHz ~ 12GHz
-
136mW
200 @ 1mA, 2V
10mA
150°C (TJ)
Surface Mount
SOT-343F
4-DFP
NTE2501
NTE Electronics, Inc

RF TRANS NPN 300V 70MHZ TO126

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Frequency - Transition: 70MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 1.5W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126
Paket: -
Request a Quote
300V
70MHz
-
-
1.5W
100 @ 10mA, 10V
100mA
150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126
MRF1004MB
MACOM Technology Solutions

TRANS NPN 4W 960MHZ-1215MHZ

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 11dB
  • Power - Max: 4W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 75mA, 5V
  • Current - Collector (Ic) (Max): 250mA
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: 332A-03
  • Supplier Device Package: 332A-03, Style 1
Paket: -
Request a Quote
20V
-
-
11dB
4W
10 @ 75mA, 5V
250mA
-
Chassis Mount
332A-03
332A-03, Style 1
2SC5508-A
CEL

RF TRANS NPN 3.3V 25GHZ SOT343F

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 3.3V
  • Frequency - Transition: 25GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 2GHz
  • Gain: 19dB
  • Power - Max: 115mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 2V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: -
Paket: -
Request a Quote
3.3V
25GHz
1.1dB @ 2GHz
19dB
115mW
50 @ 5mA, 2V
35mA
150°C (TJ)
Surface Mount
SOT-343F
-
2N3799
Microchip Technology

SMALL-SIGNAL BJT

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 1.2W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500µA, 5V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18 (TO-206AA)
Paket: -
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60V
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1.2W
300 @ 500µA, 5V
50mA
-65°C ~ 200°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18 (TO-206AA)
SD1309-01H
Microsemi Corporation

RF POWER TRANSISTOR

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Request a Quote
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