Page 1028 - Transistoren - FETs, MOSFET - Einzeln | Diskrete Halbleiterprodukte

IRFH7182TRPBF

Infineon Technologies

MOSFET NCH 100V 23A PQFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 157A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3120pF @ 50V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 4W (Ta), 195W (Tc)
Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-PQFN (5x6)
Package / Case: 8-PowerTDFN

Paket: 8-PowerTDFN

Lager6.432

MOSFET (Metal Oxide)

100V

23A (Ta), 157A (Tc)

10V

3.6V @ 250µA

74nC @ 10V

3120pF @ 50V

±20V

-

4W (Ta), 195W (Tc)

3.9 mOhm @ 50A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-PQFN (5x6)

8-PowerTDFN

IRL5602STRRPBF

Infineon Technologies

MOSFET P-CH 20V 24A D2PAK

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1460pF @ 15V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 42 mOhm @ 12A, 4.5V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Lager220.080

MOSFET (Metal Oxide)

20V

24A (Tc)

2.5V, 4.5V

1V @ 250µA

44nC @ 4.5V

1460pF @ 15V

±8V

-

75W (Tc)

42 mOhm @ 12A, 4.5V

-55°C ~ 175°C (TJ)

Surface Mount

D2PAK

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRLR8503

Infineon Technologies

MOSFET N-CH 30V 44A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 62W (Tc)
Rds On (Max) @ Id, Vgs: 16 mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paket: TO-252-3, DPak (2 Leads + Tab), SC-63

Lager30.360

MOSFET (Metal Oxide)

30V

44A (Tc)

4.5V, 10V

3V @ 250µA

20nC @ 5V

1650pF @ 25V

±20V

-

62W (Tc)

16 mOhm @ 15A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

D-Pak

TO-252-3, DPak (2 Leads + Tab), SC-63

FDZ4670S

Fairchild/ON Semiconductor

MOSFET N-CH 30V 25A 20FLFBGA

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3845pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 20-FLFBGA (3.5x4.0)
Package / Case: 20-FLFBGA (30 pos)

Paket: 20-FLFBGA (30 pos)

Lager2.976

MOSFET (Metal Oxide)

30V

25A (Ta)

4.5V, 10V

3V @ 1mA

69nC @ 10V

3845pF @ 15V

±20V

-

2.5W (Ta)

2.4 mOhm @ 25A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

20-FLFBGA (3.5x4.0)

20-FLFBGA (30 pos)

MTM232230L

Panasonic Electronic Components

MOSFET N-CH 20V 4.5A SMINI-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
Vgs (Max): ±10V
FET Feature: -
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 28 mOhm @ 1A, 4V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SMini3-G1
Package / Case: SC-70, SOT-323

Paket: SC-70, SOT-323

Lager288.000

MOSFET (Metal Oxide)

20V

4.5A (Ta)

2.5V, 4.5V

1.3V @ 1mA

-

1200pF @ 10V

±10V

-

500mW (Ta)

28 mOhm @ 1A, 4V

150°C (TJ)

Surface Mount

SMini3-G1

SC-70, SOT-323

IXFN240N15T2

IXYS

MOSFET N-CH 150V 240A SOT227

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 240A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 460nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 32000pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 830W (Tc)
Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 60A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC

Paket: SOT-227-4, miniBLOC

Lager3.568

MOSFET (Metal Oxide)

150V

240A

10V

5V @ 8mA

460nC @ 10V

32000pF @ 25V

±20V

-

830W (Tc)

5.2 mOhm @ 60A, 10V

-55°C ~ 175°C (TJ)

Chassis Mount

SOT-227B

SOT-227-4, miniBLOC

IRFPF30PBF

Vishay Siliconix

MOSFET N-CH 900V 3.6A TO-247AC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 3.7 Ohm @ 2.2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package / Case: TO-247-3

Paket: TO-247-3

Lager5.248

MOSFET (Metal Oxide)

900V

3.6A (Tc)

10V

4V @ 250µA

78nC @ 10V

1200pF @ 25V

±20V

-

125W (Tc)

3.7 Ohm @ 2.2A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

CSD18535KCS

Texas Instruments

MOSFET N-CH 60V 200A TO-220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6620pF @ 30V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2 mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Package / Case: TO-220-3

Paket: TO-220-3

Lager103.464

MOSFET (Metal Oxide)

60V

200A (Ta)

4.5V, 10V

2.4V @ 250µA

81nC @ 10V

6620pF @ 30V

±20V

-

300W (Tc)

2 mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220-3

IXFN32N100Q3

IXYS

MOSFET N-CH 1000V 28A SOT-227

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: 28A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 6.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 9940pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 780W (Tc)
Rds On (Max) @ Id, Vgs: 320 mOhm @ 16A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC

Paket: SOT-227-4, miniBLOC

Lager4.096

MOSFET (Metal Oxide)

1000V

28A

10V

6.5V @ 8mA

195nC @ 10V

9940pF @ 25V

±30V

-

780W (Tc)

320 mOhm @ 16A, 10V

-55°C ~ 150°C (TJ)

Chassis Mount

SOT-227B

SOT-227-4, miniBLOC

AUIRFSL6535

Infineon Technologies

MOSFET NCH 300V 19A TO262

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 300V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2340pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 210W (Tc)
Rds On (Max) @ Id, Vgs: 185 mOhm @ 11A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-262-3
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

Paket: TO-262-3 Long Leads, I2Pak, TO-262AA

Lager9.108

MOSFET (Metal Oxide)

300V

19A (Tc)

10V

5V @ 150µA

57nC @ 10V

2340pF @ 25V

±20V

-

210W (Tc)

185 mOhm @ 11A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

TO-262-3

TO-262-3 Long Leads, I2Pak, TO-262AA

DMP10H4D2S-7

Diodes Incorporated

MOSFET P-CH 100V 0.27A SOT23

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 380mW (Ta)
Rds On (Max) @ Id, Vgs: 4.2 Ohm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3

Paket: TO-236-3, SC-59, SOT-23-3

Lager2.400

MOSFET (Metal Oxide)

100V

270mA (Ta)

4V, 10V

3V @ 250µA

1.8nC @ 10V

87pF @ 25V

±20V

-

380mW (Ta)

4.2 Ohm @ 500mA, 10V

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23

TO-236-3, SC-59, SOT-23-3

STB30NF10T4

STMicroelectronics

MOSFET N-CH 100V 35A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 45 mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Lager260.160

MOSFET (Metal Oxide)

100V

35A (Tc)

10V

4V @ 250µA

55nC @ 10V

1180pF @ 25V

±20V

-

115W (Tc)

45 mOhm @ 15A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

D2PAK

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPP339N20NM6AKSA1

Infineon Technologies

MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

Paket: -

Request a Quote

-

64-2144PBF

Infineon Technologies

MOSFET N-CH 200V 9.3A D2PAK

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

Paket: -

Request a Quote

-

AOUS66414

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 40V 40A/92A ULTRASO8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 92A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 6.2W (Ta), 92W (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: UltraSO-8™
Package / Case: 3-PowerSMD, Flat Leads

Paket: -

Request a Quote

MOSFET (Metal Oxide)

40 V

40A (Ta), 92A (Tc)

4.5V, 10V

2.3V @ 250µA

80 nC @ 10 V

4350 pF @ 20 V

±20V

-

6.2W (Ta), 92W (Tc)

2.2mOhm @ 20A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

UltraSO-8™

3-PowerSMD, Flat Leads

RFD16N03LSM

Harris Corporation

N-CHANNEL POWER MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 16A
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: TO-252 (DPAK)
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

Paket: -

Request a Quote

MOSFET (Metal Oxide)

30 V

16A

-

Surface Mount

TO-252 (DPAK)

TO-252-3, DPAK (2 Leads + Tab), SC-63

AOTF11N60

Alpha & Omega Semiconductor Inc.

MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 11A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1656 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 50W
Rds On (Max) @ Id, Vgs: 650mOhm @ 5.5A, 10V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Through Hole
Supplier Device Package: TO-220F
Package / Case: TO-220-3 Full Pack

Paket: -

Request a Quote

MOSFET (Metal Oxide)

600 V

11A

10V

4.5V @ 250µA

30.6 nC @ 10 V

1656 pF @ 25 V

±30V

-

50W

650mOhm @ 5.5A, 10V

-55°C ~ 150°C

Through Hole

TO-220F

TO-220-3 Full Pack

FDBL86063_F085

onsemi

MOSFET N-CH 100V 240A 8HPSOF

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 357W (Tj)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-HPSOF
Package / Case: 8-PowerSFN

Paket: -

Request a Quote

MOSFET (Metal Oxide)

100 V

240A (Tc)

10V

4V @ 250µA

95 nC @ 10 V

5120 pF @ 50 V

±20V

-

357W (Tj)

2.6mOhm @ 80A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

8-HPSOF

8-PowerSFN

FCH125N65S3R0-F155

onsemi

MOSFET N-CH 650V 24A TO247-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 2.4mA
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 181W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package / Case: TO-247-3

Paket: -

Lager1.365

MOSFET (Metal Oxide)

650 V

24A (Tc)

10V

4.5V @ 2.4mA

46 nC @ 10 V

1940 pF @ 400 V

±30V

-

181W (Tc)

125mOhm @ 12A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

IST015N06NM5AUMA1

Infineon Technologies

OPTIMOS 5 POWER MOSFET 60 V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 242A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.3V @ 95µA
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-5-1
Package / Case: 5-PowerSFN

Paket: -

Lager5.193

MOSFET (Metal Oxide)

60 V

36A (Ta), 242A (Tc)

6V, 10V

3.3V @ 95µA

89 nC @ 10 V

5200 pF @ 30 V

±20V

-

3.8W (Ta), 167W (Tc)

1.5mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-HSOF-5-1

5-PowerSFN

MMFT960T1

onsemi

MOSFET N-CH 60V 300MA SOT223

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

Paket: -

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-

AONS66400

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 40V 5X6 DFN

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

Paket: -

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DF17MR12W1M1HFB68BPSA1

Infineon Technologies

LOW POWER EASY

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 45A (Tj)
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs(th) (Max) @ Id: 5.15V @ 20mA
Gate Charge (Qg) (Max) @ Vgs: 149 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 800 V
Vgs (Max): +20V, -7V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 50A, 18V
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: -
Package / Case: Module

Paket: -

Lager27

SiCFET (Silicon Carbide)

1200 V

45A (Tj)

15V, 18V

5.15V @ 20mA

149 nC @ 18 V

4400 pF @ 800 V

+20V, -7V

-

16.2mOhm @ 50A, 18V

-40°C ~ 175°C (TJ)

Chassis Mount

-

Module

IRFF9122

Harris Corporation

P-CHANNEL POWER MOSFET

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 20W
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: TO-205AF (TO-39)
Package / Case: TO-205AF Metal Can

Paket: -

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MOSFET (Metal Oxide)

100 V

3.5A (Tc)

-

20W

-

Through Hole

TO-205AF (TO-39)

TO-205AF Metal Can

MSJU11N65-TP

Micro Commercial Co

MOSFET N-CH 650V 11A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 901 pF @ 50 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 78W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

Paket: -

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MOSFET (Metal Oxide)

650 V

11A (Tc)

10V

4V @ 250µA

21 nC @ 10 V

901 pF @ 50 V

±30V

-

78W (Tc)

380mOhm @ 5.5A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

DPAK

TO-252-3, DPAK (2 Leads + Tab), SC-63

NVD5803NT4G

onsemi

MOSFET N-CH 40V 85A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

Paket: -

Request a Quote

MOSFET (Metal Oxide)

40 V

85A (Tc)

5V, 10V

3.5V @ 250µA

51 nC @ 10 V

3220 pF @ 25 V

±20V

-

83W (Tc)

5.7mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

DPAK

TO-252-3, DPAK (2 Leads + Tab), SC-63

UPA2717AGR-E1-AT

Renesas Electronics Corporation

MOSFET P-CH 30V 15A 8PSOP

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 10 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 7.5A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: 8-PSOP
Package / Case: 8-SOIC (0.173", 4.40mm Width)

Paket: -

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MOSFET (Metal Oxide)

30 V

15A (Ta)

-

2.5V @ 1mA

130 nC @ 10 V

3550 pF @ 10 V

-

5.5mOhm @ 7.5A, 10V

-

Surface Mount

8-PSOP

8-SOIC (0.173", 4.40mm Width)

MCH6305-H-TL-E

onsemi

PCH 2.5V DRIVE SERIES

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

Paket: -

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Teilenummer	Hersteller	Beschreibung	Paket	Lager	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRFH7182TRPBF	Infineon Technologies	MOSFET NCH 100V 23A PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 157A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3120pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4W (Ta), 195W (Tc) Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerTDFN	Paket: 8-PowerTDFN	Lager6.432	MOSFET (Metal Oxide)	100V	23A (Ta), 157A (Tc)	10V	3.6V @ 250µA	74nC @ 10V	3120pF @ 50V	±20V	-	4W (Ta), 195W (Tc)	3.9 mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (5x6)	8-PowerTDFN
IRL5602STRRPBF	Infineon Technologies	MOSFET P-CH 20V 24A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1460pF @ 15V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 42 mOhm @ 12A, 4.5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Lager220.080	MOSFET (Metal Oxide)	20V	24A (Tc)	2.5V, 4.5V	1V @ 250µA	44nC @ 4.5V	1460pF @ 15V	±8V	-	75W (Tc)	42 mOhm @ 12A, 4.5V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRLR8503	Infineon Technologies	MOSFET N-CH 30V 44A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 62W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Paket: TO-252-3, DPak (2 Leads + Tab), SC-63	Lager30.360	MOSFET (Metal Oxide)	30V	44A (Tc)	4.5V, 10V	3V @ 250µA	20nC @ 5V	1650pF @ 25V	±20V	-	62W (Tc)	16 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FDZ4670S	Fairchild/ON Semiconductor	MOSFET N-CH 30V 25A 20FLFBGA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3845pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 20-FLFBGA (3.5x4.0) Package / Case: 20-FLFBGA (30 pos)	Paket: 20-FLFBGA (30 pos)	Lager2.976	MOSFET (Metal Oxide)	30V	25A (Ta)	4.5V, 10V	3V @ 1mA	69nC @ 10V	3845pF @ 15V	±20V	-	2.5W (Ta)	2.4 mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	20-FLFBGA (3.5x4.0)	20-FLFBGA (30 pos)
MTM232230L	Panasonic Electronic Components	MOSFET N-CH 20V 4.5A SMINI-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 28 mOhm @ 1A, 4V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SMini3-G1 Package / Case: SC-70, SOT-323	Paket: SC-70, SOT-323	Lager288.000	MOSFET (Metal Oxide)	20V	4.5A (Ta)	2.5V, 4.5V	1.3V @ 1mA	-	1200pF @ 10V	±10V	-	500mW (Ta)	28 mOhm @ 1A, 4V	150°C (TJ)	Surface Mount	SMini3-G1	SC-70, SOT-323
IXFN240N15T2	IXYS	MOSFET N-CH 150V 240A SOT227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 240A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 460nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 32000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 830W (Tc) Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Paket: SOT-227-4, miniBLOC	Lager3.568	MOSFET (Metal Oxide)	150V	240A	10V	5V @ 8mA	460nC @ 10V	32000pF @ 25V	±20V	-	830W (Tc)	5.2 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IRFPF30PBF	Vishay Siliconix	MOSFET N-CH 900V 3.6A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 3.7 Ohm @ 2.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Paket: TO-247-3	Lager5.248	MOSFET (Metal Oxide)	900V	3.6A (Tc)	10V	4V @ 250µA	78nC @ 10V	1200pF @ 25V	±20V	-	125W (Tc)	3.7 Ohm @ 2.2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
CSD18535KCS	Texas Instruments	MOSFET N-CH 60V 200A TO-220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6620pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 2 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Paket: TO-220-3	Lager103.464	MOSFET (Metal Oxide)	60V	200A (Ta)	4.5V, 10V	2.4V @ 250µA	81nC @ 10V	6620pF @ 30V	±20V	-	300W (Tc)	2 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
IXFN32N100Q3	IXYS	MOSFET N-CH 1000V 28A SOT-227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 28A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9940pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 780W (Tc) Rds On (Max) @ Id, Vgs: 320 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Paket: SOT-227-4, miniBLOC	Lager4.096	MOSFET (Metal Oxide)	1000V	28A	10V	6.5V @ 8mA	195nC @ 10V	9940pF @ 25V	±30V	-	780W (Tc)	320 mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
AUIRFSL6535	Infineon Technologies	MOSFET NCH 300V 19A TO262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2340pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 210W (Tc) Rds On (Max) @ Id, Vgs: 185 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Paket: TO-262-3 Long Leads, I2Pak, TO-262AA	Lager9.108	MOSFET (Metal Oxide)	300V	19A (Tc)	10V	5V @ 150µA	57nC @ 10V	2340pF @ 25V	±20V	-	210W (Tc)	185 mOhm @ 11A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
DMP10H4D2S-7	Diodes Incorporated	MOSFET P-CH 100V 0.27A SOT23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 270mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 380mW (Ta) Rds On (Max) @ Id, Vgs: 4.2 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Paket: TO-236-3, SC-59, SOT-23-3	Lager2.400	MOSFET (Metal Oxide)	100V	270mA (Ta)	4V, 10V	3V @ 250µA	1.8nC @ 10V	87pF @ 25V	±20V	-	380mW (Ta)	4.2 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
STB30NF10T4	STMicroelectronics	MOSFET N-CH 100V 35A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 115W (Tc) Rds On (Max) @ Id, Vgs: 45 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Lager260.160	MOSFET (Metal Oxide)	100V	35A (Tc)	10V	4V @ 250µA	55nC @ 10V	1180pF @ 25V	±20V	-	115W (Tc)	45 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPP339N20NM6AKSA1	Infineon Technologies	MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
64-2144PBF	Infineon Technologies	MOSFET N-CH 200V 9.3A D2PAK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AOUS66414	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 40V 40A/92A ULTRASO8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 92A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 6.2W (Ta), 92W (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: UltraSO-8™ Package / Case: 3-PowerSMD, Flat Leads	Paket: -	Request a Quote	MOSFET (Metal Oxide)	40 V	40A (Ta), 92A (Tc)	4.5V, 10V	2.3V @ 250µA	80 nC @ 10 V	4350 pF @ 20 V	±20V	-	6.2W (Ta), 92W (Tc)	2.2mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	UltraSO-8™	3-PowerSMD, Flat Leads
RFD16N03LSM	Harris Corporation	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 16A Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Paket: -	Request a Quote	MOSFET (Metal Oxide)	30 V	16A	-	-	-	-	-	-	-	-	-	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
AOTF11N60	Alpha & Omega Semiconductor Inc.	MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 11A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1656 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W Rds On (Max) @ Id, Vgs: 650mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Paket: -	Request a Quote	MOSFET (Metal Oxide)	600 V	11A	10V	4.5V @ 250µA	30.6 nC @ 10 V	1656 pF @ 25 V	±30V	-	50W	650mOhm @ 5.5A, 10V	-55°C ~ 150°C	Through Hole	TO-220F	TO-220-3 Full Pack
FDBL86063_F085	onsemi	MOSFET N-CH 100V 240A 8HPSOF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 357W (Tj) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HPSOF Package / Case: 8-PowerSFN	Paket: -	Request a Quote	MOSFET (Metal Oxide)	100 V	240A (Tc)	10V	4V @ 250µA	95 nC @ 10 V	5120 pF @ 50 V	±20V	-	357W (Tj)	2.6mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-HPSOF	8-PowerSFN
FCH125N65S3R0-F155	onsemi	MOSFET N-CH 650V 24A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 2.4mA Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 181W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Paket: -	Lager1.365	MOSFET (Metal Oxide)	650 V	24A (Tc)	10V	4.5V @ 2.4mA	46 nC @ 10 V	1940 pF @ 400 V	±30V	-	181W (Tc)	125mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
IST015N06NM5AUMA1	Infineon Technologies	OPTIMOS 5 POWER MOSFET 60 V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 242A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.3V @ 95µA Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-5-1 Package / Case: 5-PowerSFN	Paket: -	Lager5.193	MOSFET (Metal Oxide)	60 V	36A (Ta), 242A (Tc)	6V, 10V	3.3V @ 95µA	89 nC @ 10 V	5200 pF @ 30 V	±20V	-	3.8W (Ta), 167W (Tc)	1.5mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HSOF-5-1	5-PowerSFN
MMFT960T1	onsemi	MOSFET N-CH 60V 300MA SOT223 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AONS66400	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 40V 5X6 DFN FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DF17MR12W1M1HFB68BPSA1	Infineon Technologies	LOW POWER EASY FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 45A (Tj) Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs(th) (Max) @ Id: 5.15V @ 20mA Gate Charge (Qg) (Max) @ Vgs: 149 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 800 V Vgs (Max): +20V, -7V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 16.2mOhm @ 50A, 18V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: - Package / Case: Module	Paket: -	Lager27	SiCFET (Silicon Carbide)	1200 V	45A (Tj)	15V, 18V	5.15V @ 20mA	149 nC @ 18 V	4400 pF @ 800 V	+20V, -7V	-	-	16.2mOhm @ 50A, 18V	-40°C ~ 175°C (TJ)	Chassis Mount	-	Module
IRFF9122	Harris Corporation	P-CHANNEL POWER MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): 20W Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-205AF (TO-39) Package / Case: TO-205AF Metal Can	Paket: -	Request a Quote	MOSFET (Metal Oxide)	100 V	3.5A (Tc)	-	-	-	-	-	-	20W	-	-	Through Hole	TO-205AF (TO-39)	TO-205AF Metal Can
MSJU11N65-TP	Micro Commercial Co	MOSFET N-CH 650V 11A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 901 pF @ 50 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 78W (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Paket: -	Request a Quote	MOSFET (Metal Oxide)	650 V	11A (Tc)	10V	4V @ 250µA	21 nC @ 10 V	901 pF @ 50 V	±30V	-	78W (Tc)	380mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
NVD5803NT4G	onsemi	MOSFET N-CH 40V 85A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Paket: -	Request a Quote	MOSFET (Metal Oxide)	40 V	85A (Tc)	5V, 10V	3.5V @ 250µA	51 nC @ 10 V	3220 pF @ 25 V	±20V	-	83W (Tc)	5.7mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
UPA2717AGR-E1-AT	Renesas Electronics Corporation	MOSFET P-CH 30V 15A 8PSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 10 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 5.5mOhm @ 7.5A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-PSOP Package / Case: 8-SOIC (0.173", 4.40mm Width)	Paket: -	Request a Quote	MOSFET (Metal Oxide)	30 V	15A (Ta)	-	2.5V @ 1mA	130 nC @ 10 V	3550 pF @ 10 V	-	-	-	5.5mOhm @ 7.5A, 10V	-	Surface Mount	8-PSOP	8-SOIC (0.173", 4.40mm Width)
MCH6305-H-TL-E	onsemi	PCH 2.5V DRIVE SERIES FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-