Bild |
Teilenummer |
Hersteller |
Beschreibung |
Paket |
Lager |
Anzahl |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Infineon Technologies |
MOSFET P-CH 12V 10A 8-TSSOP
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Paket: 8-TSSOP (0.173", 4.40mm Width) |
Lager5.328 |
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MOSFET (Metal Oxide) | 12V | 10A (Ta) | 1.8V, 4.5V | 1.2V @ 250µA | 100nC @ 4.5V | 5050pF @ 10V | ±8V | - | 1.5W (Ta) | 11 mOhm @ 10A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
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Infineon Technologies |
MOSFET P-CH 55V 3.4A 8-SOIC
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Paket: 8-SOIC (0.154", 3.90mm Width) |
Lager8.736 |
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MOSFET (Metal Oxide) | 55V | 3.4A (Ta) | 4.5V, 10V | 1V @ 250µA | 38nC @ 10V | 690pF @ 25V | ±20V | Schottky Diode (Isolated) | 2W (Ta) | 105 mOhm @ 3.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Microsemi Corporation |
MOSFET N-CH 500V T-MAX
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Paket: - |
Lager4.128 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET N-CH 30V 48A SO8-FL
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Paket: 8-PowerTDFN, 5 Leads |
Lager4.560 |
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MOSFET (Metal Oxide) | 30V | 9.7A (Ta), 48A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 21.5nC @ 10V | 1264pF @ 15V | ±20V | - | 920mW (Ta), 23.2W (Tc) | 6 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Renesas Electronics America |
MOSFET P-CH 40V 50A TO-263
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Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Lager3.824 |
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MOSFET (Metal Oxide) | 40V | 50A (Tc) | 4.5V, 10V | 2.5V @ 1mA | 100nC @ 10V | 5100pF @ 10V | ±20V | - | 1.8W (Ta), 90W (Tc) | 10 mOhm @ 25A, 10V | 175°C (TJ) | Surface Mount | TO-263 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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NXP |
MOSFET N-CH 30V 4.6A 6TSOP
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Paket: SC-74, SOT-457 |
Lager3.424 |
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MOSFET (Metal Oxide) | 30V | 4.6A (Tc) | 4.5V, 10V | 2V @ 1mA | 8.8nC @ 4.5V | 350pF @ 30V | ±20V | - | 1.75W (Tc) | 47 mOhm @ 2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SC-74, SOT-457 |
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ON Semiconductor |
MOSFET N-CH 30V 32A IPAK TRIMMED
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Paket: TO-251-3 Stub Leads, IPak |
Lager3.072 |
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MOSFET (Metal Oxide) | 30V | 7.7A (Ta), 32A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 13nC @ 10V | 1013pF @ 15V | ±20V | - | 1.36W (Ta), 24W (Tc) | 10.5 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Stub Leads, IPak |
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Rohm Semiconductor |
MOSFET N-CH 600V 2A DPAK
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Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager218.892 |
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MOSFET (Metal Oxide) | 600V | 2A (Ta) | 10V | 4V @ 1mA | 25.6nC @ 10V | 280pF @ 10V | ±30V | - | 20W (Tc) | 5.5 Ohm @ 1A, 10V | 150°C (TJ) | Surface Mount | CPT3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 500V 4.5A D2PAK
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Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Lager3.936 |
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MOSFET (Metal Oxide) | 500V | 4.5A (Tc) | 10V | 4V @ 250µA | 38nC @ 10V | 610pF @ 25V | ±20V | - | 3.1W (Ta), 74W (Tc) | 1.5 Ohm @ 2.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 200V 36A TO-263
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Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Lager3.248 |
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MOSFET (Metal Oxide) | 200V | 36A (Tc) | - | - | - | - | - | - | - | - | - | Surface Mount | TO-263 (IXTA) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Texas Instruments |
MOSFET P-CH 15V 2.3A 8-SOIC
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Paket: 8-SOIC (0.154", 3.90mm Width) |
Lager110.868 |
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MOSFET (Metal Oxide) | 15V | 2.3A (Ta) | 2.7V, 10V | 1.5V @ 250µA | 11.25nC @ 10V | - | +2V, -15V | - | 791mW (Ta) | 90 mOhm @ 2.5A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Fairchild/ON Semiconductor |
PT8 N-CH 40/20V POWER TRENCH MOS
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Paket: 8-PowerWDFN |
Lager7.888 |
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MOSFET (Metal Oxide) | 40V | 27A (Ta), 141A (Tc) | 4.5V, 10V | 3V @ 250µA | 80nC @ 10V | 5300pF @ 20V | ±20V | - | 2.8W (Ta), 75W (Tc) | 2.1 mOhm @ 27A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | Power33 | 8-PowerWDFN |
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Nexperia USA Inc. |
MOSFET N-CH 80V 2.8A SOT1220
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Paket: 6-UDFN Exposed Pad |
Lager5.232 |
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MOSFET (Metal Oxide) | 80V | 2.8A (Ta) | 4.5V, 10V | 2.7V @ 250µA | 14.9nC @ 10V | 504pF @ 40V | ±20V | - | 1.6W (Ta), 15.6W (Tc) | 105 mOhm @ 2.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-DFN2020MD (2x2) | 6-UDFN Exposed Pad |
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Fairchild/ON Semiconductor |
MOSFET N-CH 20V 21A D-PAK
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Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager15.264 |
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MOSFET (Metal Oxide) | 20V | 21A (Ta) | 2.5V, 4.5V | 1.2V @ 250µA | 9nC @ 4.5V | 710pF @ 10V | ±8V | - | 3.3W (Ta), 33W (Tc) | 32 mOhm @ 8A, 4.5V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 55V 60A DPAK
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Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager1.505.724 |
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MOSFET (Metal Oxide) | 55V | 60A (Tc) | 4.5V, 10V | 2V @ 250µA | 56nC @ 5V | 1950pF @ 25V | ±15V | - | 100W (Tc) | 15 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 60V 120A TO-262
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Paket: TO-262-3 Long Leads, I2Pak, TO-262AA |
Lager20.028 |
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MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 4V @ 150µA | 120nC @ 10V | 4520pF @ 50V | ±20V | - | 230W (Tc) | 4.2 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Fairchild/ON Semiconductor |
MOSFET N-CH 400V 26A TO-220
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Paket: TO-220-3 |
Lager18.228 |
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MOSFET (Metal Oxide) | 400V | 26A (Tc) | 10V | 5V @ 250µA | 60nC @ 10V | 3185pF @ 25V | ±30V | - | 265W (Tc) | 160 mOhm @ 13A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Diodes Incorporated |
MOSFET P-CH 20V 3.5A 6-DFN
|
Paket: 6-UDFN Exposed Pad |
Lager335.304 |
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MOSFET (Metal Oxide) | 20V | 3.5A (Ta) | 1.8V, 4.5V | 1.3V @ 250µA | - | 632pF @ 10V | ±12V | Schottky Diode (Isolated) | 1.4W (Ta) | 95 mOhm @ 2.8A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type B) | 6-UDFN Exposed Pad |
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Vishay Siliconix |
MOSFET P-CH 60V 1.6A SC70-6
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Paket: 6-TSSOP, SC-88, SOT-363 |
Lager85.812 |
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MOSFET (Metal Oxide) | 60V | 1.6A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 5.4nC @ 4.5V | 355pF @ 25V | ±20V | - | 3.3W (Tc) | 290 mOhm @ 2A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | SC-70-6 (SOT-363) | 6-TSSOP, SC-88, SOT-363 |
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Diodes Incorporated |
MOSFET P-CH 30V 11.5A PWRDI3333
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Paket: - |
Lager8.490 |
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MOSFET (Metal Oxide) | 30 V | 19.8A (Ta), 50A (Tc) | 4.5V, 10V | 3V @ 250µA | 46 nC @ 10 V | 2380 pF @ 15 V | ±25V | - | 980mW (Ta) | 10mOhm @ 11.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount, Wettable Flank | PowerDI3333-8 (SWP) Type UX | 8-PowerVDFN |
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IXYS |
MOSFET N-CH 1100V 3A TO263
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Paket: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 1100 V | 3A (Tc) | 10V | 4.5V @ 250µA | 39 nC @ 10 V | 1300 pF @ 25 V | ±20V | - | 150W (Tc) | 4Ohm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 500V 13A TO220-FP
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Paket: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 500 V | 13A (Tc) | 10V | 3.5V @ 520µA | 36 nC @ 10 V | 1420 pF @ 100 V | ±20V | - | 33W (Tc) | 250mOhm @ 7.8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-31 | TO-220-3 Full Pack |
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onsemi |
SMALL SIGNAL N-CHANNEL MOSFET
|
Paket: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Nexperia USA Inc. |
MOSFET N-CH 60V 380MA DFN0606-3
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Paket: - |
Lager172.677 |
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MOSFET (Metal Oxide) | 60 V | 380mA (Ta) | - | 1.5V @ 250µA | 0.7 nC @ 10 V | 20 pF @ 30 V | ±20V | - | 380mW (Ta), 2.8W (Tc) | 2.3Ohm @ 380mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DFN0606-3 | 3-XFDFN |
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onsemi |
MOSFET N-CH 80V 50A POWER56
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Paket: - |
Lager8.940 |
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MOSFET (Metal Oxide) | 80 V | 50A (Tc) | 10V | 4V @ 250µA | 30 nC @ 10 V | 1440 pF @ 40 V | ±20V | - | 75W (Tj) | 13.4mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | Power56 | 8-PowerTDFN |
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Rohm Semiconductor |
MOSFET N-CH 60V 80A TO252
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Paket: - |
Lager4.239 |
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MOSFET (Metal Oxide) | 60 V | 80A (Tc) | 4.5V, 10V | 2.5V @ 100µA | 71 nC @ 10 V | 3620 pF @ 30 V | ±20V | - | 119W (Tc) | 5.5mOhm @ 80A, 10V | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CHANNEL 60V 19A 8SOIC
|
Paket: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 19A (Ta) | 4.5V, 10V | 2.3V @ 250µA | 65 nC @ 10 V | 2500 pF @ 30 V | ±20V | - | 3.1W (Ta) | 4.8mOhm @ 19A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 560V 21A TO247-3
|
Paket: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 560 V | 21A (Tc) | 10V | 3.9V @ 1mA | 95 nC @ 10 V | 2400 pF @ 25 V | ±20V | - | 208W (Tc) | 190mOhm @ 13.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-1 | TO-247-3 |