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Transistoren - FETs, MOSFET - Einzeln

Aufzeichnungen 42.029
Page  1.104/1.502
Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IRF3710ZGPBF
Infineon Technologies

MOSFET N-CH 100V 59A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250mA
  • Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 160W (Tc)
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 35A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paket: TO-220-3
Lager2.608
MOSFET (Metal Oxide)
100V
59A (Tc)
10V
4V @ 250mA
120nC @ 10V
2900pF @ 25V
±20V
-
160W (Tc)
18 mOhm @ 35A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
AUIRFR024N
Infineon Technologies

MOSFET N-CH 55V 17A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 75 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63
Lager4.800
MOSFET (Metal Oxide)
55V
17A (Tc)
10V
4V @ 250µA
20nC @ 10V
370pF @ 25V
±20V
-
45W (Tc)
75 mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPak (2 Leads + Tab), SC-63
IRF3305
Infineon Technologies

MOSFET N-CH 55V 75A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3650pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 330W (Tc)
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paket: TO-220-3
Lager3.504
MOSFET (Metal Oxide)
55V
75A (Tc)
10V
4V @ 250µA
150nC @ 10V
3650pF @ 25V
±20V
-
330W (Tc)
8 mOhm @ 75A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
APT6040BNG
Microsemi Corporation

MOSFET N-CH 600V 18A TO247AD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 310W (Tc)
  • Rds On (Max) @ Id, Vgs: 400 mOhm @ 9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD
  • Package / Case: TO-247-3
Paket: TO-247-3
Lager5.600
MOSFET (Metal Oxide)
600V
18A (Tc)
10V
4V @ 1mA
130nC @ 10V
2950pF @ 25V
±30V
-
310W (Tc)
400 mOhm @ 9A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD
TO-247-3
hot SI7882DP-T1-E3
Vishay Siliconix

MOSFET N-CH 12V 13A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.9W (Ta)
  • Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 17A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
Paket: PowerPAK? SO-8
Lager458.316
MOSFET (Metal Oxide)
12V
13A (Ta)
2.5V, 4.5V
1.4V @ 250µA
30nC @ 4.5V
-
±8V
-
1.9W (Ta)
5.5 mOhm @ 17A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
SI7407DN-T1-GE3
Vishay Siliconix

MOSFET P-CH 12V 9.9A PPAK 1212-8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 400µA
  • Gate Charge (Qg) (Max) @ Vgs: 59nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 12 mOhm @ 15.6A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? 1212-8
  • Package / Case: PowerPAK? 1212-8
Paket: PowerPAK? 1212-8
Lager7.168
MOSFET (Metal Oxide)
12V
9.9A (Ta)
1.8V, 4.5V
1V @ 400µA
59nC @ 4.5V
-
±8V
-
1.5W (Ta)
12 mOhm @ 15.6A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? 1212-8
PowerPAK? 1212-8
hot BS107ARL1G
ON Semiconductor

MOSFET N-CH 200V 0.25A TO-92

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 350mW (Ta)
  • Rds On (Max) @ Id, Vgs: 6.4 Ohm @ 250mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Paket: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Lager537.288
MOSFET (Metal Oxide)
200V
250mA (Ta)
10V
3V @ 1mA
-
60pF @ 25V
±20V
-
350mW (Ta)
6.4 Ohm @ 250mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
hot FQPF5N50C
Fairchild/ON Semiconductor

MOSFET N-CH 500V 5A TO-220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 38W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
Paket: TO-220-3 Full Pack
Lager107.100
MOSFET (Metal Oxide)
500V
5A (Tc)
10V
4V @ 250µA
24nC @ 10V
625pF @ 25V
±30V
-
38W (Tc)
1.4 Ohm @ 2.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
IXFP230N075T2
IXYS

MOSFET N-CH 75V 230A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 178nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 25V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 480W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paket: TO-220-3
Lager2.288
MOSFET (Metal Oxide)
75V
230A (Tc)
10V
4V @ 1mA
178nC @ 10V
10500pF @ 25V
-
-
480W (Tc)
4.2 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot SI7738DP-T1-E3
Vishay Siliconix

MOSFET N-CH 150V 30A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 75V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5.4W (Ta), 96W (Tc)
  • Rds On (Max) @ Id, Vgs: 38 mOhm @ 7.7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
Paket: PowerPAK? SO-8
Lager111.108
MOSFET (Metal Oxide)
150V
30A (Tc)
10V
4V @ 250µA
53nC @ 10V
2100pF @ 75V
±20V
-
5.4W (Ta), 96W (Tc)
38 mOhm @ 7.7A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
hot IRF1405ZSTRLPBF
Infineon Technologies

MOSFET N-CH 55V 75A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4780pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 230W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Lager12.312
MOSFET (Metal Oxide)
55V
75A (Tc)
10V
4V @ 250µA
180nC @ 10V
4780pF @ 25V
±20V
-
230W (Tc)
4.9 mOhm @ 75A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot FDPF5N50NZU
Fairchild/ON Semiconductor

MOSFET N-CH 500V 3.9A TO-220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 25V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 2 Ohm @ 1.95A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
Paket: TO-220-3 Full Pack
Lager27.240
MOSFET (Metal Oxide)
500V
3.9A (Tc)
10V
5V @ 250µA
12nC @ 10V
485pF @ 25V
±25V
-
30W (Tc)
2 Ohm @ 1.95A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
hot IRF1010NPBF
Infineon Technologies

MOSFET N-CH 55V 85A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3210pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 180W (Tc)
  • Rds On (Max) @ Id, Vgs: 11 mOhm @ 43A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paket: TO-220-3
Lager18.084
MOSFET (Metal Oxide)
55V
85A (Tc)
10V
4V @ 250µA
120nC @ 10V
3210pF @ 25V
±20V
-
180W (Tc)
11 mOhm @ 43A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot STD2NK60Z-1
STMicroelectronics

MOSFET N-CH 600V 1.4A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 8 Ohm @ 700mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Paket: TO-251-3 Short Leads, IPak, TO-251AA
Lager171.108
MOSFET (Metal Oxide)
600V
1.4A (Tc)
10V
4.5V @ 50µA
10nC @ 10V
170pF @ 25V
±30V
-
45W (Tc)
8 Ohm @ 700mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
PSMN012-80BS,118
Nexperia USA Inc.

MOSFET N-CH 80V 74A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2782pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 148W (Tc)
  • Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Lager35.424
MOSFET (Metal Oxide)
80V
74A (Tc)
10V
4V @ 1mA
43nC @ 10V
2782pF @ 12V
±20V
-
148W (Tc)
11 mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SSM3K72CTC,L3F
Toshiba Semiconductor and Storage

MOSFET N-CH 60V 0.15A CST3C

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 3.9 Ohm @ 100mA, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: CST3C
  • Package / Case: SC-101, SOT-883
Paket: SC-101, SOT-883
Lager93.378
MOSFET (Metal Oxide)
60V
150mA (Ta)
4.5V, 10V
2.1V @ 250µA
0.35nC @ 4.5V
17pF @ 10V
±20V
-
500mW (Ta)
3.9 Ohm @ 100mA, 10V
150°C (TJ)
Surface Mount
CST3C
SC-101, SOT-883
hot IRFIZ34NPBF
Infineon Technologies

MOSFET N-CH 55V 21A TO220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 37W (Tc)
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB Full-Pak
  • Package / Case: TO-220-3 Full Pack
Paket: TO-220-3 Full Pack
Lager99.372
MOSFET (Metal Oxide)
55V
21A (Tc)
10V
4V @ 250µA
34nC @ 10V
700pF @ 25V
±20V
-
37W (Tc)
40 mOhm @ 11A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB Full-Pak
TO-220-3 Full Pack
hot IPB054N08N3 G
Infineon Technologies

MOSFET N-CH 80V 80A TO263-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 90µA
  • Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4750pF @ 40V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-2
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Lager390.000
MOSFET (Metal Oxide)
80V
80A (Tc)
6V, 10V
3.5V @ 90µA
69nC @ 10V
4750pF @ 40V
±20V
-
150W (Tc)
5.4 mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-2
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot IRFBG20PBF
Vishay Siliconix

MOSFET N-CH 1000V 1.4A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 54W (Tc)
  • Rds On (Max) @ Id, Vgs: 11 Ohm @ 840mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paket: TO-220-3
Lager3.584
MOSFET (Metal Oxide)
1000V
1.4A (Tc)
10V
4V @ 250µA
38nC @ 10V
500pF @ 25V
±20V
-
54W (Tc)
11 Ohm @ 840mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot ZXMN6A25GTA
Diodes Incorporated

MOSFET N-CH 60V SOT223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 3.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
Paket: TO-261-4, TO-261AA
Lager185.484
MOSFET (Metal Oxide)
60V
4.8A (Ta)
4.5V, 10V
1V @ 250µA
20.4nC @ 10V
1063pF @ 30V
±20V
-
2W (Ta)
50 mOhm @ 3.6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
BSS126SK-13
Diodes Incorporated

DIODE GP SOT23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 30mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
  • Vgs(th) (Max) @ Id: 1.4V @ 8µA
  • Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 30.9 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Paket: -
Request a Quote
MOSFET (Metal Oxide)
600 V
30mA (Ta)
0V, 10V
1.4V @ 8µA
2 nC @ 5 V
30.9 pF @ 25 V
±20V
Depletion Mode
1W (Ta)
500Ohm @ 16mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
IRLH5034TR2PBF
Infineon Technologies

MOSFET N-CH 40V 100A 5X6 PQFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 2.5V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4730 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PQFN (5x6)
  • Package / Case: 8-PowerVDFN
Paket: -
Request a Quote
MOSFET (Metal Oxide)
40 V
29A (Ta), 100A (Tc)
-
2.5V @ 150µA
82 nC @ 10 V
4730 pF @ 25 V
-
-
-
2.4mOhm @ 50A, 10V
-
Surface Mount
8-PQFN (5x6)
8-PowerVDFN
2SK2529-E
Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
Paket: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
GC11N65M
Goford Semiconductor

N650V,RD(MAX)<360M@10V,VTH2.5V~4

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 768 pF @ 50 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 78W (Tc)
  • Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Paket: -
Lager2.325
MOSFET (Metal Oxide)
650 V
11A (Tc)
10V
4V @ 250µA
21 nC @ 10 V
768 pF @ 50 V
±30V
-
78W (Tc)
360mOhm @ 5.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-263
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
AOSP32368
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 16A 8SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 5.5mOhm @ 16A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
Paket: -
Lager19.092
MOSFET (Metal Oxide)
30 V
16A (Ta)
4.5V, 10V
2.4V @ 250µA
60 nC @ 10 V
2270 pF @ 15 V
±20V
-
3.1W (Ta)
5.5mOhm @ 16A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
IRF634B-FP001
onsemi

MOSFET N-CH 250V 8.1A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250 V
  • Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 74W (Tc)
  • Rds On (Max) @ Id, Vgs: 450mOhm @ 4.05A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
Paket: -
Request a Quote
MOSFET (Metal Oxide)
250 V
8.1A (Tc)
10V
4V @ 250µA
38 nC @ 10 V
1000 pF @ 25 V
±30V
-
74W (Tc)
450mOhm @ 4.05A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
BSC012N06NSATMA1
Infineon Technologies

MOSFET N-CH 60V 100A TSON-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 306A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.3V @ 147µA
  • Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 214W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TSON-8-3
  • Package / Case: 8-PowerTDFN
Paket: -
Lager15.000
MOSFET (Metal Oxide)
60 V
36A (Ta), 306A (Tc)
6V, 10V
3.3V @ 147µA
143 nC @ 10 V
11000 pF @ 30 V
±20V
-
214W (Tc)
1.2mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TSON-8-3
8-PowerTDFN
SSM3K16CT-L3F
Toshiba Semiconductor and Storage

MOSFET N-CH 20V 100MA CST3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
  • Vgs(th) (Max) @ Id: 1.1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 100mW (Ta)
  • Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: CST3
  • Package / Case: SC-101, SOT-883
Paket: -
Lager106.068
MOSFET (Metal Oxide)
20 V
100mA (Ta)
1.5V, 4V
1.1V @ 100µA
-
9.3 pF @ 3 V
±10V
-
100mW (Ta)
3Ohm @ 10mA, 4V
150°C
Surface Mount
CST3
SC-101, SOT-883