Transistoren - FETs, MOSFET - Einzeln

IPD90N06S405ATMA1

Infineon Technologies

MOSFET N-CH 60V 90A TO252-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 60µA
• Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6500pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 107W (Tc)
• Rds On (Max) @ Id, Vgs: 5.1 mOhm @ 90A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paket: TO-252-3, DPak (2 Leads + Tab), SC-63

IPP08CN10N G

Infineon Technologies

MOSFET N-CH 100V 95A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 130µA
• Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6660pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 167W (Tc)
• Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 95A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO-220-3
• Package / Case: TO-220-3

Paket: TO-220-3

NTD20N06L-1G

ON Semiconductor

MOSFET N-CH 60V 20A IPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 25V
• Vgs (Max): ±15V
• FET Feature: -
• Power Dissipation (Max): 1.36W (Ta), 60W (Tj)
• Rds On (Max) @ Id, Vgs: 48 mOhm @ 10A, 5V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: I-Pak
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

Paket: TO-251-3 Short Leads, IPak, TO-251AA

BUK76150-55A,118

NXP

MOSFET N-CH 55V 11A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 322pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 36W (Tc)
• Rds On (Max) @ Id, Vgs: 150 mOhm @ 5A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

HUF75321D3S

Fairchild/ON Semiconductor

MOSFET N-CH 55V 20A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 44nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 93W (Tc)
• Rds On (Max) @ Id, Vgs: 36 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252AA
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paket: TO-252-3, DPak (2 Leads + Tab), SC-63

IRFZ24S

Vishay Siliconix

MOSFET N-CH 60V 17A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
• Rds On (Max) @ Id, Vgs: 100 mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPI80N04S303AKSA1

Infineon Technologies

MOSFET N-CH 40V 80A TO262-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 120µA
• Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7300pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 188W (Tc)
• Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 80A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO262-3
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

Paket: TO-262-3 Long Leads, I2Pak, TO-262AA

IXTA160N10T

IXYS

MOSFET N-CH 100V 160A TO-263

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 132nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 430W (Tc)
• Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263 (IXTA)
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

AOT1404L

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 40V 15A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 220A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.7V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 20V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.1W (Ta), 417W (Tc)
• Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220
• Package / Case: TO-220-3

Paket: TO-220-3

AOD2810

Alpha & Omega Semiconductor Inc.

MOSFET N CH 80V 10.5A TO252

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80V
• Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 46A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1871pF @ 40V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
• Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252, (D-Pak)
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paket: TO-252-3, DPak (2 Leads + Tab), SC-63

APT17F120J

Microsemi Corporation

MOSFET N-CH 1200V 18A SOT-227

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1200V
• Current - Continuous Drain (Id) @ 25°C: 18A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 2.5mA
• Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 9670pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 545W (Tc)
• Rds On (Max) @ Id, Vgs: 580 mOhm @ 14A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: ISOTOP?
• Package / Case: SOT-227-4, miniBLOC

Paket: SOT-227-4, miniBLOC

SIHF22N60E-GE3

Vishay Siliconix

MOSFET N-CH 600V 21A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1920pF @ 100V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 35W (Tc)
• Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220 Full Pack
• Package / Case: TO-220-3 Full Pack

Paket: TO-220-3 Full Pack

STD6N65M2

STMicroelectronics

MOSFET N-CH 650V 4A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 226pF @ 100V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 60W (Tc)
• Rds On (Max) @ Id, Vgs: 1.35 Ohm @ 2A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DPAK
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paket: TO-252-3, DPak (2 Leads + Tab), SC-63

STB180N55F3

STMicroelectronics

MOSFET N-CH 55V 120A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 330W (Tc)
• Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 60A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

BUK9M7R2-40EX

Nexperia USA Inc.

MOSFET N-CH 40V 70A LFPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 2.1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 19.7nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 2567pF @ 25V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 79W (Tc)
• Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: LFPAK33
• Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)

Paket: SOT-1210, 8-LFPAK33 (5-Lead)

IRFP150PBF

Vishay Siliconix

MOSFET N-CH 100V 41A TO-247AC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 230W (Tc)
• Rds On (Max) @ Id, Vgs: 55 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247-3
• Package / Case: TO-247-3

Paket: TO-247-3

IRLR110PBF

Vishay Siliconix

MOSFET N-CH 100V 4.3A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
• Rds On (Max) @ Id, Vgs: 540 mOhm @ 2.6A, 5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paket: TO-252-3, DPak (2 Leads + Tab), SC-63

IRFR4615TRLPBF

Infineon Technologies

MOSFET N-CH 150V 33A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150V
• Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 144W (Tc)
• Rds On (Max) @ Id, Vgs: 42 mOhm @ 21A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paket: TO-252-3, DPak (2 Leads + Tab), SC-63

ZXM61P03FTA

Diodes Incorporated

MOSFET P-CH 30V 1.1A SOT23-3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 625mW (Ta)
• Rds On (Max) @ Id, Vgs: 350 mOhm @ 600mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

Paket: TO-236-3, SC-59, SOT-23-3

RJK0703DPN-A0-T2

Renesas Electronics Corporation

MOSFET N-CH 75V 70A TO220ABA

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75 V
• Current - Continuous Drain (Id) @ 25°C: 70A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 10 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 125W (Ta)
• Rds On (Max) @ Id, Vgs: 6.7mOhm @ 35A, 10V
• Operating Temperature: 150°C
• Mounting Type: Through Hole
• Supplier Device Package: TO-220ABA
• Package / Case: TO-220-3

Paket: -

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DMP22D5UFB4-7R

Diodes Incorporated

MOSFET BVDSS: 8V~24V X2-DFN1006-

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.3 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 15 V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 460mW (Ta)
• Rds On (Max) @ Id, Vgs: 1.9Ohm @ 100mA, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: X2-DFN1006-3
• Package / Case: 3-XFDFN

Paket: -

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UJ4C075044K4S

Qorvo

750V/44MOHM, SIC, CASCODE, G4, T

• FET Type: N-Channel
• Technology: SiCFET (Cascode SiCJFET)
• Drain to Source Voltage (Vdss): 750 V
• Current - Continuous Drain (Id) @ 25°C: 37.4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 12V
• Vgs(th) (Max) @ Id: 6V @ 10mA
• Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
• Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 203W (Tc)
• Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 12V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247-4
• Package / Case: TO-247-4

Paket: -

IXTY1N100P-TRL

IXYS

MOSFET N-CH 1000V 1A TO252

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1000 V
• Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 50µA
• Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 331 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 50W (Tc)
• Rds On (Max) @ Id, Vgs: 15Ohm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252AA
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

Paket: -

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STD11N60M6

STMicroelectronics

DISCRETE

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.75V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 387 pF @ 100 V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 90W (Tc)
• Rds On (Max) @ Id, Vgs: 520mOhm @ 4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252 (DPAK)
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

Paket: -

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RFA100N05E

Harris Corporation

N-CHANNEL POWER MOSFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 50 V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 240W (Tc)
• Rds On (Max) @ Id, Vgs: 8mOhm @ 100A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-218-5
• Package / Case: TO-218-5

Paket: -

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IXFM12N90Q

IXYS

MOSFET N-CH 900V 12A TO-204AA

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

Paket: -

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2SK3668-ZK-E1-AY

Renesas Electronics Corporation

POWER FIELD-EFFECT TRANSISTOR

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

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HAT1043M-EL-E

Renesas Electronics Corporation

4.4A, 20V, P-CHANNEL MOSFET

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 10 V
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): 1.05W (Ta)
• Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 6-TSOP
• Package / Case: SOT-23-6 Thin, TSOT-23-6

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