Transistoren - FETs, MOSFET - Einzeln

BSS314PEL6327HTSA1

Infineon Technologies

MOSFET P-CH 30V 1.5A SOT23

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 6.3µA
• Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 294pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 500mW (Ta)
• Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-SOT23-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

Paket: TO-236-3, SC-59, SOT-23-3

IRFR12N25DTRPBF

Infineon Technologies

MOSFET N-CH 250V 14A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 250V
• Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 144W (Tc)
• Rds On (Max) @ Id, Vgs: 260 mOhm @ 8.4A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paket: TO-252-3, DPak (2 Leads + Tab), SC-63

BUK753R5-60E,127

NXP

MOSFET N-CH 60V 120A TO220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 8920pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 293W (Tc)
• Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

Paket: TO-220-3

AON6270

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 75V 85A DFN5X6

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 31.5A (Ta), 85A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 37.5V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 7.3W (Ta), 83W (Tc)
• Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-DFN (5x6)
• Package / Case: 8-PowerSMD, Flat Leads

Paket: 8-PowerSMD, Flat Leads

FQD12P10TM

Fairchild/ON Semiconductor

MOSFET P-CH 100V 9.4A DPAK

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
• Rds On (Max) @ Id, Vgs: 290 mOhm @ 4.7A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252, (D-Pak)
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paket: TO-252-3, DPak (2 Leads + Tab), SC-63

IPB60R040C7ATMA1

Infineon Technologies

MOSFET N-CH 600V TO263-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1.24mA
• Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4340pF @ 400V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 227W (Tc)
• Rds On (Max) @ Id, Vgs: 40 mOhm @ 24.9A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-3
• Package / Case: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA

Paket: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA

AUIRFP2602

Infineon Technologies

MOSFET N-CH 24V 180A TO-247AD

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 24V
• Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 390nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 11220pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 380W (Tc)
• Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 180A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247AD
• Package / Case: TO-247-3

Paket: TO-247-3

IRFSL38N20DPBF

Infineon Technologies

MOSFET N-CH 200V 43A TO-262-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 54 mOhm @ 26A, 10V
• Operating Temperature: -
• Mounting Type: Through Hole
• Supplier Device Package: TO-262
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

Paket: TO-262-3 Long Leads, I2Pak, TO-262AA

IPA65R600C6XKSA1

Infineon Technologies

MOSFET N-CH 650V 7.3A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 210µA
• Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 28W (Tc)
• Rds On (Max) @ Id, Vgs: 600 mOhm @ 2.1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220 Full Pack
• Package / Case: TO-220-3 Full Pack

Paket: TO-220-3 Full Pack

IPD031N03LGBTMA1

Infineon Technologies

MOSFET N-CH 30V 90A TO252-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 94W (Tc)
• Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paket: TO-252-3, DPak (2 Leads + Tab), SC-63

BSL302SNH6327XTSA1

Infineon Technologies

MOSFET N-CH 30V 7.1A 6TSOP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 30µA
• Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2W (Ta)
• Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: P-TSOP6-6
• Package / Case: SOT-23-6 Thin, TSOT-23-6

Paket: SOT-23-6 Thin, TSOT-23-6

IXTH44N30T

IXYS

MOSFET N-CH 300V 44A TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 300V
• Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: Through Hole
• Supplier Device Package: TO-247 (IXTH)
• Package / Case: TO-247-3

Paket: TO-247-3

NTMFS4955NT3G

ON Semiconductor

MOSFET N-CH 30V 48A SO8FL

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta), 48A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1264pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 920mW (Ta), 23.2W (Tc)
• Rds On (Max) @ Id, Vgs: 6 mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 5-DFN (5x6) (8-SOFL)
• Package / Case: 8-PowerTDFN, 5 Leads

Paket: 8-PowerTDFN, 5 Leads

TSM4NB65CI C0G

TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, PLANA

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 13.46nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 549pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 70W (Tc)
• Rds On (Max) @ Id, Vgs: 3.37 Ohm @ 2A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: ITO-220
• Package / Case: TO-220-3 Full Pack, Isolated Tab

Paket: TO-220-3 Full Pack, Isolated Tab

IRF6678

Infineon Technologies

MOSFET N-CH 30V 30A DIRECTFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 150A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.25V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 65nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 5640pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
• Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 30A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DIRECTFET? MX
• Package / Case: DirectFET? Isometric MX

Paket: DirectFET? Isometric MX

SQJA00EP-T1_GE3

Vishay Siliconix

MOSFET N-CH 60V 30A SO8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 48W (Tc)
• Rds On (Max) @ Id, Vgs: 13 mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? SO-8
• Package / Case: PowerPAK? SO-8

Paket: PowerPAK? SO-8

FDT458P

Fairchild/ON Semiconductor

MOSFET P-CH 30V 3.4A SOT-223

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3W (Ta)
• Rds On (Max) @ Id, Vgs: 130 mOhm @ 3.4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-223-4
• Package / Case: TO-261-4, TO-261AA

Paket: TO-261-4, TO-261AA

IRFS3607PBF

Infineon Technologies

MOSFET N-CH 75V 80A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3070pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 140W (Tc)
• Rds On (Max) @ Id, Vgs: 9 mOhm @ 46A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FDMS7692

Fairchild/ON Semiconductor

MOSFET N-CH 30V 14A POWER56

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 28A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 27W (Tc)
• Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 13A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-PQFN (5x6), Power56
• Package / Case: 8-PowerTDFN

Paket: 8-PowerTDFN

TK3R9E10PL-S1X

Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 50 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 230W (Tc)
• Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
• Operating Temperature: 175°C
• Mounting Type: Through Hole
• Supplier Device Package: TO-220
• Package / Case: TO-220-3

Paket: -

SIHFZ48RS-GE3

Vishay Siliconix

MOSFET N-CH 60V 50A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 190W (Tc)
• Rds On (Max) @ Id, Vgs: 18mOhm @ 43A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263 (D2PAK)
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Paket: -

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APT10M07JVFR

Microchip Technology

MOSFET N-CH 100V 225A ISOTOP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 4V @ 5mA
• Gate Charge (Qg) (Max) @ Vgs: 1050 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 21600 pF @ 25 V
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 7mOhm @ 500mA, 10V
• Operating Temperature: -
• Mounting Type: Chassis Mount
• Supplier Device Package: ISOTOP®
• Package / Case: SOT-227-4, miniBLOC

Paket: -

Request a Quote

NVMYS022N06CTWG

onsemi

T6 60V SL LFPAK4 5X6

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: LFPAK4 (5x6)
• Package / Case: SOT-1023, 4-LFPAK

Paket: -

Request a Quote

RFP70N03

onsemi

MOSFET N-CH 30V 70A TO220-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 20 V
• Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 10mOhm @ 70A, 10V
• Operating Temperature: -
• Mounting Type: Through Hole
• Supplier Device Package: TO-220-3
• Package / Case: TO-220-3

Paket: -

Request a Quote

BSC027N10NS5ATMA1

Infineon Technologies

MOSFET N-CH 100V 23A/100A TSON

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.8V @ 146µA
• Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 8200 pF @ 50 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3W (Ta), 214W (Tc)
• Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TSON-8-3
• Package / Case: 8-PowerTDFN

Paket: -

RJK03D5DPA-00-J53

Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

Paket: -

Request a Quote

SQ2364EES-T1_BE3

Vishay Siliconix

N-CHANNEL 60-V (D-S) 175C MOSFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 3W (Tc)
• Rds On (Max) @ Id, Vgs: 240mOhm @ 2A, 4.5V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3 (TO-236)
• Package / Case: TO-236-3, SC-59, SOT-23-3

Paket: -

NTHL080N120SC1

onsemi

SICFET N-CH 1200V 44A TO247-3

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 1200 V
• Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 20V
• Vgs(th) (Max) @ Id: 4.3V @ 5mA
• Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
• Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 800 V
• Vgs (Max): +25V, -15V
• FET Feature: -
• Power Dissipation (Max): 348W (Tc)
• Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247-3
• Package / Case: TO-247-3

Paket: -

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