Page 1299 - Transistoren - FETs, MOSFET - Einzeln | Diskrete Halbleiterprodukte

IRFC4227EB

Infineon Technologies

MOSFET N-CH WAFER

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

Paket: -

Lager3.312

-

AON7536

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 68A 8DFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 68A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 4.1W (Ta), 32.5W (Tc)
Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Package / Case: 8-PowerWDFN

Paket: 8-PowerWDFN

Lager144.060

MOSFET (Metal Oxide)

30V

24A (Ta), 68A (Tc)

4.5V, 10V

2.2V @ 250µA

40nC @ 10V

2350pF @ 15V

±20V

-

4.1W (Ta), 32.5W (Tc)

4.2 mOhm @ 20A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-DFN-EP (3.3x3.3)

8-PowerWDFN

JANTX2N6784

Microsemi Corporation

MOSFET N-CH TO-205AF TO-39

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 2.25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 800mW (Ta), 15W (Tc)
Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 2.25A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-39
Package / Case: TO-205AF Metal Can

Paket: TO-205AF Metal Can

Lager4.704

MOSFET (Metal Oxide)

200V

2.25A (Tc)

10V

4V @ 250µA

8.6nC @ 10V

-

±20V

-

800mW (Ta), 15W (Tc)

1.6 Ohm @ 2.25A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-39

TO-205AF Metal Can

N0601N-ZK-E1-AY

Renesas Electronics America

MOSFET N-CH 60V 100A TO-263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 133nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7730pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.5W (Ta), 156W (Tc)
Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 50A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Lager4.976

MOSFET (Metal Oxide)

60V

100A (Ta)

10V

-

133nC @ 10V

7730pF @ 25V

±20V

-

1.5W (Ta), 156W (Tc)

4.2 mOhm @ 50A, 10V

150°C (TJ)

Surface Mount

TO-263

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

AON7200

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 15.8A 8DFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.1W (Ta), 62W (Tc)
Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-DFN (3x3)
Package / Case: 8-PowerSMD, Flat Leads

Paket: 8-PowerSMD, Flat Leads

Lager394.476

MOSFET (Metal Oxide)

30V

15.8A (Ta), 40A (Tc)

4.5V, 10V

2.4V @ 250µA

20nC @ 10V

1300pF @ 15V

±20V

-

3.1W (Ta), 62W (Tc)

8 mOhm @ 20A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-DFN (3x3)

8-PowerSMD, Flat Leads

IXTV02N250S

IXYS

MOSFET N-CH 2500V .2A PLUS220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 2500V
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 116pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 450 Ohm @ 50mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PLUS-220SMD
Package / Case: PLUS-220SMD

Paket: PLUS-220SMD

Lager2.192

MOSFET (Metal Oxide)

2500V

200mA (Tc)

10V

4.5V @ 250µA

7.4nC @ 10V

116pF @ 25V

±20V

-

83W (Tc)

450 Ohm @ 50mA, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PLUS-220SMD

HUFA76445P3

Fairchild/ON Semiconductor

MOSFET N-CH 60V 75A TO-220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4965pF @ 25V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 310W (Tc)
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 75A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

Paket: TO-220-3

Lager3.168

MOSFET (Metal Oxide)

60V

75A (Tc)

4.5V, 10V

3V @ 250µA

150nC @ 10V

4965pF @ 25V

±16V

-

310W (Tc)

6.5 mOhm @ 75A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220AB

TO-220-3

FQD10N20TM

Fairchild/ON Semiconductor

MOSFET N-CH 200V 7.6A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 51W (Tc)
Rds On (Max) @ Id, Vgs: 360 mOhm @ 3.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paket: TO-252-3, DPak (2 Leads + Tab), SC-63

Lager4.768

MOSFET (Metal Oxide)

200V

7.6A (Tc)

10V

5V @ 250µA

18nC @ 10V

670pF @ 25V

±30V

-

2.5W (Ta), 51W (Tc)

360 mOhm @ 3.8A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

D-Pak

TO-252-3, DPak (2 Leads + Tab), SC-63

ZVP0120ASTOB

Diodes Incorporated

MOSFET P-CH 200V 0.11A TO92-3

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 110mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 32 Ohm @ 125mA, 10V
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: E-Line (TO-92 compatible)
Package / Case: E-Line-3

Paket: E-Line-3

Lager2.912

MOSFET (Metal Oxide)

200V

110mA (Ta)

10V

3.5V @ 1mA

-

100pF @ 25V

±20V

-

700mW (Ta)

32 Ohm @ 125mA, 10V

-

Through Hole

E-Line (TO-92 compatible)

E-Line-3

IRFP31N50L

Vishay Siliconix

MOSFET N-CH 500V 31A TO-247AC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 460W (Tc)
Rds On (Max) @ Id, Vgs: 180 mOhm @ 19A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package / Case: TO-247-3

Paket: TO-247-3

Lager5.840

MOSFET (Metal Oxide)

500V

31A (Tc)

10V

5V @ 250µA

210nC @ 10V

5000pF @ 25V

±30V

-

460W (Tc)

180 mOhm @ 19A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

IPP076N15N5AKSA1

Infineon Technologies

MV POWER MOS

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

Paket: -

Lager2.080

-

IXFT400N075T2

IXYS

MOSFET N-CH 75V 400A TO-268

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 400A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 420nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 24000pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1000W (Tc)
Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-268
Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Paket: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Lager3.168

MOSFET (Metal Oxide)

75V

400A (Tc)

10V

4V @ 250µA

420nC @ 10V

24000pF @ 25V

±20V

-

1000W (Tc)

2.3 mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

TO-268

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

DMT32M5LFG-7

Diodes Incorporated

MOSFET BVDSS: 25V 30V POWERDI333

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 67.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4066pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.3W (Ta)
Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerDI3333-8
Package / Case: 8-PowerVDFN

Paket: 8-PowerVDFN

Lager2.768

MOSFET (Metal Oxide)

30V

30A (Ta)

4.5V, 10V

3V @ 250µA

67.7nC @ 10V

4066pF @ 15V

±20V

-

2.3W (Ta)

1.7 mOhm @ 20A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PowerDI3333-8

8-PowerVDFN

R6047ENZ1C9

Rohm Semiconductor

MOSFET N-CH 600V 47A TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3850pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 72 mOhm @ 25.8A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247
Package / Case: TO-247-3

Paket: TO-247-3

Lager4.432

MOSFET (Metal Oxide)

600V

47A (Tc)

10V

4V @ 1mA

145nC @ 10V

3850pF @ 25V

±20V

-

120W (Tc)

72 mOhm @ 25.8A, 10V

150°C (TJ)

Through Hole

TO-247

TO-247-3

FCH47N60F_F133

Fairchild/ON Semiconductor

MOSFET N-CH 600V 47A TO-247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 417W (Tc)
Rds On (Max) @ Id, Vgs: 70 mOhm @ 23.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package / Case: TO-247-3

Paket: TO-247-3

Lager6.160

MOSFET (Metal Oxide)

600V

47A (Tc)

10V

5V @ 250µA

270nC @ 10V

8000pF @ 25V

±30V

-

417W (Tc)

70 mOhm @ 23.5A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

IRF6646TRPBF

Infineon Technologies

MOSFET N-CH 80V 12A DIRECTFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 68A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 12A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DIRECTFET? MN
Package / Case: DirectFET? Isometric MN

Paket: DirectFET? Isometric MN

Lager148.704

MOSFET (Metal Oxide)

80V

12A (Ta), 68A (Tc)

10V

4.9V @ 150µA

50nC @ 10V

2060pF @ 25V

±20V

-

2.8W (Ta), 89W (Tc)

9.5 mOhm @ 12A, 10V

-40°C ~ 150°C (TJ)

Surface Mount

DIRECTFET? MN

DirectFET? Isometric MN

STD16N60M2

STMicroelectronics

MOSFET N-CH 600V 12A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 100V
Vgs (Max): ±25V
FET Feature: -
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 320 mOhm @ 6A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paket: TO-252-3, DPak (2 Leads + Tab), SC-63

Lager44.220

MOSFET (Metal Oxide)

600V

12A (Tc)

10V

4V @ 250µA

19nC @ 10V

700pF @ 100V

±25V

-

110W (Tc)

320 mOhm @ 6A, 10V

150°C (TJ)

Surface Mount

DPAK

TO-252-3, DPak (2 Leads + Tab), SC-63

STL47N60M6

STMicroelectronics

MOSFET N-CH 600V 31A PWRFLAT HV

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±25V
FET Feature: -
Power Dissipation (Max): 189W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 15.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerFlat™ (8x8) HV
Package / Case: 8-PowerVDFN

Paket: -

Request a Quote

MOSFET (Metal Oxide)

600 V

31A (Tc)

10V

4.75V @ 250µA

57 nC @ 10 V

-

±25V

-

189W (Tc)

80mOhm @ 15.5A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PowerFlat™ (8x8) HV

8-PowerVDFN

MTAJ30N06ELFK

onsemi

NFET T0220FP JPN

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

Paket: -

Request a Quote

-

NTC080N120SC1

onsemi

SIC MOS WAFER SALES 80MOHM 1200V

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1112 pF @ 800 V
Vgs (Max): +25V, -15V
FET Feature: -
Power Dissipation (Max): 178W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

Paket: -

Request a Quote

SiCFET (Silicon Carbide)

1200 V

31A (Tc)

20V

4.3V @ 5mA

56 nC @ 20 V

1112 pF @ 800 V

+25V, -15V

-

178W (Tc)

110mOhm @ 20A, 20V

-55°C ~ 175°C (TJ)

Surface Mount

Die

NVBG080N120SC1

onsemi

SICFET N-CH 1200V 30A D2PAK-7

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1154 pF @ 800 V
Vgs (Max): +25V, -15V
FET Feature: -
Power Dissipation (Max): 179W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK-7
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Paket: -

Lager1.878

SiCFET (Silicon Carbide)

1200 V

30A (Tc)

20V

4.3V @ 5mA

56 nC @ 20 V

1154 pF @ 800 V

+25V, -15V

-

179W (Tc)

110mOhm @ 20A, 20V

-55°C ~ 175°C (TJ)

Surface Mount

D2PAK-7

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

MKE38P600LB-TUB

IXYS

MOSFET N-CH 600V 50A SMPD

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: ISOPLUS-SMPD™.B
Package / Case: 9-SMD Module

Paket: -

Request a Quote

MOSFET (Metal Oxide)

600 V

50A (Tc)

-

Surface Mount

ISOPLUS-SMPD™.B

9-SMD Module

CES2301-ML

MOSLEADER

Single P -20V -2.8A SOT-23

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

Paket: -

Request a Quote

-

IRFH5300TR2PBF

Infineon Technologies

MOSFET N-CH 30V 40A PQFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 15 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: PQFN (5x6) Single Die
Package / Case: 8-PowerVDFN

Paket: -

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MOSFET (Metal Oxide)

30 V

40A (Ta), 100A (Tc)

-

2.35V @ 150µA

120 nC @ 10 V

7200 pF @ 15 V

-

1.4mOhm @ 50A, 10V

-

Surface Mount

PQFN (5x6) Single Die

8-PowerVDFN

DMN2991UFB4-7B

Diodes Incorporated

MOSFET BVDSS: 8V~24V X2-DFN1006-

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.28 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 14.6 pF @ 16 V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 360mW (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: X2-DFN1006-3
Package / Case: 3-XFDFN

Paket: -

Lager30.000

MOSFET (Metal Oxide)

20 V

500mA (Ta)

1.8V, 4.5V

1V @ 250µA

0.28 nC @ 4.5 V

14.6 pF @ 16 V

±8V

-

360mW (Ta)

990mOhm @ 100mA, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

X2-DFN1006-3

3-XFDFN

NTBG025N065SC1

onsemi

SILICON CARBIDE (SIC) MOSFET - 1

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs(th) (Max) @ Id: 4.3V @ 15.5mA
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3480 pF @ 325 V
Vgs (Max): +22V, -8V
FET Feature: -
Power Dissipation (Max): 395W (Tc)
Rds On (Max) @ Id, Vgs: 28.5mOhm @ 45A, 18V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK-7
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Paket: -

Lager6.999

SiCFET (Silicon Carbide)

650 V

106A (Tc)

15V, 18V

4.3V @ 15.5mA

164 nC @ 18 V

3480 pF @ 325 V

+22V, -8V

-

395W (Tc)

28.5mOhm @ 45A, 18V

-55°C ~ 175°C (TJ)

Surface Mount

D2PAK-7

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

H5N3011P80-E-T2

Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

Paket: -

Request a Quote

-

DMP31D7LQ-7

Diodes Incorporated

MOSFET BVDSS: 25V~30V SOT23 T&R

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 580mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 430mW (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3

Paket: -

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MOSFET (Metal Oxide)

30 V

580mA (Ta)

4.5V, 10V

2.6V @ 250µA

0.36 nC @ 4.5 V

19 pF @ 15 V

±20V

-

430mW (Ta)

900mOhm @ 420mA, 10V

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-3

TO-236-3, SC-59, SOT-23-3

Teilenummer	Hersteller	Beschreibung	Paket	Lager	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRFC4227EB	Infineon Technologies	MOSFET N-CH WAFER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Paket: -	Lager3.312	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AON7536	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 68A 8DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 68A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4.1W (Ta), 32.5W (Tc) Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN-EP (3.3x3.3) Package / Case: 8-PowerWDFN	Paket: 8-PowerWDFN	Lager144.060	MOSFET (Metal Oxide)	30V	24A (Ta), 68A (Tc)	4.5V, 10V	2.2V @ 250µA	40nC @ 10V	2350pF @ 15V	±20V	-	4.1W (Ta), 32.5W (Tc)	4.2 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN-EP (3.3x3.3)	8-PowerWDFN
JANTX2N6784	Microsemi Corporation	MOSFET N-CH TO-205AF TO-39 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 2.25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 800mW (Ta), 15W (Tc) Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 2.25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AF Metal Can	Paket: TO-205AF Metal Can	Lager4.704	MOSFET (Metal Oxide)	200V	2.25A (Tc)	10V	4V @ 250µA	8.6nC @ 10V	-	±20V	-	800mW (Ta), 15W (Tc)	1.6 Ohm @ 2.25A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-39	TO-205AF Metal Can
N0601N-ZK-E1-AY	Renesas Electronics America	MOSFET N-CH 60V 100A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 133nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7730pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 156W (Tc) Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 50A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Lager4.976	MOSFET (Metal Oxide)	60V	100A (Ta)	10V	-	133nC @ 10V	7730pF @ 25V	±20V	-	1.5W (Ta), 156W (Tc)	4.2 mOhm @ 50A, 10V	150°C (TJ)	Surface Mount	TO-263	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
AON7200	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 15.8A 8DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 62W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (3x3) Package / Case: 8-PowerSMD, Flat Leads	Paket: 8-PowerSMD, Flat Leads	Lager394.476	MOSFET (Metal Oxide)	30V	15.8A (Ta), 40A (Tc)	4.5V, 10V	2.4V @ 250µA	20nC @ 10V	1300pF @ 15V	±20V	-	3.1W (Ta), 62W (Tc)	8 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (3x3)	8-PowerSMD, Flat Leads
IXTV02N250S	IXYS	MOSFET N-CH 2500V .2A PLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 2500V Current - Continuous Drain (Id) @ 25°C: 200mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 116pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 450 Ohm @ 50mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PLUS-220SMD Package / Case: PLUS-220SMD	Paket: PLUS-220SMD	Lager2.192	MOSFET (Metal Oxide)	2500V	200mA (Tc)	10V	4.5V @ 250µA	7.4nC @ 10V	116pF @ 25V	±20V	-	83W (Tc)	450 Ohm @ 50mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PLUS-220SMD	PLUS-220SMD
HUFA76445P3	Fairchild/ON Semiconductor	MOSFET N-CH 60V 75A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4965pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 310W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Paket: TO-220-3	Lager3.168	MOSFET (Metal Oxide)	60V	75A (Tc)	4.5V, 10V	3V @ 250µA	150nC @ 10V	4965pF @ 25V	±16V	-	310W (Tc)	6.5 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
FQD10N20TM	Fairchild/ON Semiconductor	MOSFET N-CH 200V 7.6A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 51W (Tc) Rds On (Max) @ Id, Vgs: 360 mOhm @ 3.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Paket: TO-252-3, DPak (2 Leads + Tab), SC-63	Lager4.768	MOSFET (Metal Oxide)	200V	7.6A (Tc)	10V	5V @ 250µA	18nC @ 10V	670pF @ 25V	±30V	-	2.5W (Ta), 51W (Tc)	360 mOhm @ 3.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
ZVP0120ASTOB	Diodes Incorporated	MOSFET P-CH 200V 0.11A TO92-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 110mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 32 Ohm @ 125mA, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	Paket: E-Line-3	Lager2.912	MOSFET (Metal Oxide)	200V	110mA (Ta)	10V	3.5V @ 1mA	-	100pF @ 25V	±20V	-	700mW (Ta)	32 Ohm @ 125mA, 10V	-	Through Hole	E-Line (TO-92 compatible)	E-Line-3
IRFP31N50L	Vishay Siliconix	MOSFET N-CH 500V 31A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 460W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 19A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Paket: TO-247-3	Lager5.840	MOSFET (Metal Oxide)	500V	31A (Tc)	10V	5V @ 250µA	210nC @ 10V	5000pF @ 25V	±30V	-	460W (Tc)	180 mOhm @ 19A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
IPP076N15N5AKSA1	Infineon Technologies	MV POWER MOS FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Paket: -	Lager2.080	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFT400N075T2	IXYS	MOSFET N-CH 75V 400A TO-268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 400A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 420nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 24000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1000W (Tc) Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Paket: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Lager3.168	MOSFET (Metal Oxide)	75V	400A (Tc)	10V	4V @ 250µA	420nC @ 10V	24000pF @ 25V	±20V	-	1000W (Tc)	2.3 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-268	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
DMT32M5LFG-7	Diodes Incorporated	MOSFET BVDSS: 25V 30V POWERDI333 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 67.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4066pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta) Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 Package / Case: 8-PowerVDFN	Paket: 8-PowerVDFN	Lager2.768	MOSFET (Metal Oxide)	30V	30A (Ta)	4.5V, 10V	3V @ 250µA	67.7nC @ 10V	4066pF @ 15V	±20V	-	2.3W (Ta)	1.7 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerDI3333-8	8-PowerVDFN
R6047ENZ1C9	Rohm Semiconductor	MOSFET N-CH 600V 47A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3850pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 120W (Tc) Rds On (Max) @ Id, Vgs: 72 mOhm @ 25.8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Paket: TO-247-3	Lager4.432	MOSFET (Metal Oxide)	600V	47A (Tc)	10V	4V @ 1mA	145nC @ 10V	3850pF @ 25V	±20V	-	120W (Tc)	72 mOhm @ 25.8A, 10V	150°C (TJ)	Through Hole	TO-247	TO-247-3
FCH47N60F_F133	Fairchild/ON Semiconductor	MOSFET N-CH 600V 47A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 417W (Tc) Rds On (Max) @ Id, Vgs: 70 mOhm @ 23.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Paket: TO-247-3	Lager6.160	MOSFET (Metal Oxide)	600V	47A (Tc)	10V	5V @ 250µA	270nC @ 10V	8000pF @ 25V	±30V	-	417W (Tc)	70 mOhm @ 23.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
IRF6646TRPBF	Infineon Technologies	MOSFET N-CH 80V 12A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 68A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.9V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 12A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MN Package / Case: DirectFET? Isometric MN	Paket: DirectFET? Isometric MN	Lager148.704	MOSFET (Metal Oxide)	80V	12A (Ta), 68A (Tc)	10V	4.9V @ 150µA	50nC @ 10V	2060pF @ 25V	±20V	-	2.8W (Ta), 89W (Tc)	9.5 mOhm @ 12A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MN	DirectFET? Isometric MN
STD16N60M2	STMicroelectronics	MOSFET N-CH 600V 12A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 320 mOhm @ 6A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Paket: TO-252-3, DPak (2 Leads + Tab), SC-63	Lager44.220	MOSFET (Metal Oxide)	600V	12A (Tc)	10V	4V @ 250µA	19nC @ 10V	700pF @ 100V	±25V	-	110W (Tc)	320 mOhm @ 6A, 10V	150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STL47N60M6	STMicroelectronics	MOSFET N-CH 600V 31A PWRFLAT HV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.75V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 189W (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 15.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat™ (8x8) HV Package / Case: 8-PowerVDFN	Paket: -	Request a Quote	MOSFET (Metal Oxide)	600 V	31A (Tc)	10V	4.75V @ 250µA	57 nC @ 10 V	-	±25V	-	189W (Tc)	80mOhm @ 15.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerFlat™ (8x8) HV	8-PowerVDFN
MTAJ30N06ELFK	onsemi	NFET T0220FP JPN FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NTC080N120SC1	onsemi	SIC MOS WAFER SALES 80MOHM 1200V FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 4.3V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1112 pF @ 800 V Vgs (Max): +25V, -15V FET Feature: - Power Dissipation (Max): 178W (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	Paket: -	Request a Quote	SiCFET (Silicon Carbide)	1200 V	31A (Tc)	20V	4.3V @ 5mA	56 nC @ 20 V	1112 pF @ 800 V	+25V, -15V	-	178W (Tc)	110mOhm @ 20A, 20V	-55°C ~ 175°C (TJ)	Surface Mount	Die	Die
NVBG080N120SC1	onsemi	SICFET N-CH 1200V 30A D2PAK-7 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 4.3V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1154 pF @ 800 V Vgs (Max): +25V, -15V FET Feature: - Power Dissipation (Max): 179W (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Paket: -	Lager1.878	SiCFET (Silicon Carbide)	1200 V	30A (Tc)	20V	4.3V @ 5mA	56 nC @ 20 V	1154 pF @ 800 V	+25V, -15V	-	179W (Tc)	110mOhm @ 20A, 20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
MKE38P600LB-TUB	IXYS	MOSFET N-CH 600V 50A SMPD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: ISOPLUS-SMPD™.B Package / Case: 9-SMD Module	Paket: -	Request a Quote	MOSFET (Metal Oxide)	600 V	50A (Tc)	-	-	-	-	-	-	-	-	-	Surface Mount	ISOPLUS-SMPD™.B	9-SMD Module
CES2301-ML	MOSLEADER	Single P -20V -2.8A SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFH5300TR2PBF	Infineon Technologies	MOSFET N-CH 30V 40A PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.35V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 15 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: PQFN (5x6) Single Die Package / Case: 8-PowerVDFN	Paket: -	Request a Quote	MOSFET (Metal Oxide)	30 V	40A (Ta), 100A (Tc)	-	2.35V @ 150µA	120 nC @ 10 V	7200 pF @ 15 V	-	-	-	1.4mOhm @ 50A, 10V	-	Surface Mount	PQFN (5x6) Single Die	8-PowerVDFN
DMN2991UFB4-7B	Diodes Incorporated	MOSFET BVDSS: 8V~24V X2-DFN1006- FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.28 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 14.6 pF @ 16 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: X2-DFN1006-3 Package / Case: 3-XFDFN	Paket: -	Lager30.000	MOSFET (Metal Oxide)	20 V	500mA (Ta)	1.8V, 4.5V	1V @ 250µA	0.28 nC @ 4.5 V	14.6 pF @ 16 V	±8V	-	360mW (Ta)	990mOhm @ 100mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	X2-DFN1006-3	3-XFDFN
NTBG025N065SC1	onsemi	SILICON CARBIDE (SIC) MOSFET - 1 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 106A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs(th) (Max) @ Id: 4.3V @ 15.5mA Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3480 pF @ 325 V Vgs (Max): +22V, -8V FET Feature: - Power Dissipation (Max): 395W (Tc) Rds On (Max) @ Id, Vgs: 28.5mOhm @ 45A, 18V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Paket: -	Lager6.999	SiCFET (Silicon Carbide)	650 V	106A (Tc)	15V, 18V	4.3V @ 15.5mA	164 nC @ 18 V	3480 pF @ 325 V	+22V, -8V	-	395W (Tc)	28.5mOhm @ 45A, 18V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
H5N3011P80-E-T2	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DMP31D7LQ-7	Diodes Incorporated	MOSFET BVDSS: 25V~30V SOT23 T&R FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 580mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 430mW (Ta) Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Paket: -	Request a Quote	MOSFET (Metal Oxide)	30 V	580mA (Ta)	4.5V, 10V	2.6V @ 250µA	0.36 nC @ 4.5 V	19 pF @ 15 V	±20V	-	430mW (Ta)	900mOhm @ 420mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3