Transistoren - FETs, MOSFET - Einzeln

IRF3711ZCSTRLP

Infineon Technologies

MOSFET N-CH 20V 92A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.45V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 79W (Tc)
• Rds On (Max) @ Id, Vgs: 6 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SPI80N06S-08

Infineon Technologies

MOSFET N-CH 55V 80A I2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 240µA
• Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3660pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 8 mOhm @ 80A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO262-3-1
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

Paket: TO-262-3 Long Leads, I2Pak, TO-262AA

SUD50N025-06P-E3

Vishay Siliconix

MOSFET N-CH 25V 78A TO252

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2490pF @ 12V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 10.7W (Ta), 65W (Tc)
• Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252, (D-Pak)
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paket: TO-252-3, DPak (2 Leads + Tab), SC-63

SI4660DY-T1-E3

Vishay Siliconix

MOSFET N-CH 25V 23.1A 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 23.1A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 15V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 3.1W (Ta), 5.6W (Tc)
• Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

Paket: 8-SOIC (0.154", 3.90mm Width)

SFU9220TU_F080

Fairchild/ON Semiconductor

MOSFET P-CH 200V 3.1A IPAK

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
• Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.6A, 10V
• Operating Temperature: -
• Mounting Type: Through Hole
• Supplier Device Package: TO-251-3
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

Paket: TO-251-3 Short Leads, IPak, TO-251AA

NTD4865N-1G

ON Semiconductor

MOSFET N-CH 25V 8.5A IPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 44A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 827pF @ 12V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.27W (Ta), 33.3W (Tc)
• Rds On (Max) @ Id, Vgs: 10.9 mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: I-Pak
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

Paket: TO-251-3 Short Leads, IPak, TO-251AA

AO6414

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 55V 2.3A 6-TSOP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 3.3nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 1.56W (Ta)
• Rds On (Max) @ Id, Vgs: 160 mOhm @ 2.4A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 6-TSOP
• Package / Case: SC-74, SOT-457

Paket: SC-74, SOT-457

PH8030L,115

NXP

MOSFET N-CH 30V 76.7A LFPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 76.7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.15V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 15.2nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 12V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 62.5W (Tc)
• Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: LFPAK56, Power-SO8
• Package / Case: SC-100, SOT-669

Paket: SC-100, SOT-669

ZXMN10A11K

Diodes Incorporated

MOSFET N-CH 100V 2.4A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 274pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.11W (Ta)
• Rds On (Max) @ Id, Vgs: 350 mOhm @ 2.6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252-3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paket: TO-252-3, DPak (2 Leads + Tab), SC-63

PSMN3R7-30YLC,115

NXP

MOSFET N-CH 30V 100A LFPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1.95V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1848pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 79W (Tc)
• Rds On (Max) @ Id, Vgs: 3.95 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: LFPAK56, Power-SO8
• Package / Case: SC-100, SOT-669

Paket: SC-100, SOT-669

IXTK20N150

IXYS

MOSFET N-CH 1500V 20A TO-264

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1500V
• Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 215nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7800pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 1250W (Tc)
• Rds On (Max) @ Id, Vgs: 1 Ohm @ 10A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-264 (IXTK)
• Package / Case: TO-264-3, TO-264AA

Paket: TO-264-3, TO-264AA

IRFR224TRLPBF

Vishay Siliconix

MOSFET N-CH 250V 3.8A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 250V
• Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
• Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 2.3A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paket: TO-252-3, DPak (2 Leads + Tab), SC-63

AOB409L

Alpha & Omega Semiconductor Inc.

MOSFET P-CH 60V 5A TO263

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 31.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2953pF @ 30V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.1W (Ta), 83.3W (Tc)
• Rds On (Max) @ Id, Vgs: 38 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263 (D2Pak)
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SI4178DY-T1-E3

Vishay Siliconix

MOSFET N-CH 30V 12A 8SO

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.8V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 15V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
• Rds On (Max) @ Id, Vgs: 21 mOhm @ 8.4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

Paket: 8-SOIC (0.154", 3.90mm Width)

DMT5015LFDF-13

Diodes Incorporated

MOSFET N-CH 50V 9.1A 6DFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 50V
• Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 902.7pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 820mW (Ta)
• Rds On (Max) @ Id, Vgs: 15 mOhm @ 8A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 6-UDFN2020 (2x2)
• Package / Case: 6-UDFN Exposed Pad

Paket: 6-UDFN Exposed Pad

MCH3484-TL-W

ON Semiconductor

MOSFET N-CH 20V 4.5A MCPH3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 0.9V, 2.5V
• Vgs(th) (Max) @ Id: 800mV @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 11nC @ 2.5V
• Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 10V
• Vgs (Max): ±5V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 40 mOhm @ 2A, 2.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SC-70FL/MCPH3
• Package / Case: 3-SMD, Flat Leads

Paket: 3-SMD, Flat Leads

IXFT42N50P2

IXYS

MOSFET N-CH 500V 42A TO268

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 830W (Tc)
• Rds On (Max) @ Id, Vgs: 145 mOhm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-268
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Paket: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

DMP6023LFG-7

Diodes Incorporated

MOSFET P-CH 60V 7.7A POWERDI3333

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 53.1nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2569pF @ 30V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 25 mOhm @ 5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerDI3333-8
• Package / Case: 8-PowerWDFN

Paket: 8-PowerWDFN

APT10090BLLG

Microsemi Corporation

MOSFET N-CH 1000V 12A TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1000V
• Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1969pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 298W (Tc)
• Rds On (Max) @ Id, Vgs: 950 mOhm @ 6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247 [B]
• Package / Case: TO-247-3

Paket: TO-247-3

DMP6110SVT-13

Diodes Incorporated

MOSFET P-CH 60V TSOT26

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 969pF @ 30V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.2W (Ta)
• Rds On (Max) @ Id, Vgs: 105 mOhm @ 4.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TSOT-26
• Package / Case: SOT-23-6 Thin, TSOT-23-6

Paket: SOT-23-6 Thin, TSOT-23-6

STP36NF06

STMicroelectronics

MOSFET N-CH 60V 30A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 70W (Tc)
• Rds On (Max) @ Id, Vgs: 40 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

Paket: TO-220-3

NTMFS4C13NT1G

ON Semiconductor

MOSFET N-CH 30V 38A SO8FL

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 38A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15.2nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 750mW (Ta)
• Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 5-DFN (5x6) (8-SOFL)
• Package / Case: 8-PowerTDFN

Paket: 8-PowerTDFN

IRF5305SPBF

Infineon Technologies

MOSFET P-CH 55V 31A D2PAK

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
• Rds On (Max) @ Id, Vgs: 60 mOhm @ 16A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

BSB028N06NN3GXUMA1

Infineon Technologies

MOSFET N-CH 60V 22A/90A 2WDSON

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 90A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 102µA
• Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.2W (Ta), 78W (Tc)
• Rds On (Max) @ Id, Vgs: 2.8mOhm @ 30A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: MG-WDSON-2, CanPAK M™
• Package / Case: 3-WDSON

Paket: -

IPP050N10NF2SAKMA1

Infineon Technologies

TRENCH >=100V

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 19.4A (Ta), 110A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.8V @ 84µA
• Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
• Rds On (Max) @ Id, Vgs: 5mOhm @ 60A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3
• Package / Case: TO-220-3

Paket: -

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IPC95R450P7X7SA1

Infineon Technologies

MOSFET N-CH BARE DIE

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

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MCB60I1200TZ

IXYS

1200V 90A SIC POWER MOSFET

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 1200 V
• Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 20V
• Vgs(th) (Max) @ Id: 4V @ 15mA
• Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 20 V
• Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 1000 V
• Vgs (Max): +20V, -5V
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-268AA (D3Pak-HV)
• Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

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SIR873DP-T1-GE3

Vishay Siliconix

MOSFET P-CH 150V 37A PPAK SO-8

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150 V
• Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1805 pF @ 75 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 104W (Tc)
• Rds On (Max) @ Id, Vgs: 47.5mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK® SO-8
• Package / Case: PowerPAK® SO-8

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