Bild |
Teilenummer |
Hersteller |
Beschreibung |
Paket |
Lager |
Anzahl |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Infineon Technologies |
MOSFET N-CH 60V 2.9A SOT-223
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Paket: TO-261-4, TO-261AA |
Lager7.440 |
|
MOSFET (Metal Oxide) | 60V | 2.9A (Ta) | 10V | 4V @ 20µA | 12nC @ 10V | 340pF @ 25V | ±20V | - | 1.8W (Ta) | 120 mOhm @ 2.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 25V 30A D2PAK
|
Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Lager4.176 |
|
MOSFET (Metal Oxide) | 25V | 30A (Tc) | 4.5V, 10V | 2V @ 20µA | 8.3nC @ 5V | 1043pF @ 15V | ±20V | - | 46W (Tc) | 13.6 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET P CH 60V 1.7A SOT223
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Paket: TO-261-4, TO-261AA |
Lager3.504 |
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MOSFET (Metal Oxide) | 60V | 1.7A (Ta) | 10V | 4V @ 1mA | 14.3nC @ 10V | 492pF @ 25V | ±20V | - | 1W (Ta) | 185 mOhm @ 2.4A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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ON Semiconductor |
MOSFET N-CH 25V 13.3A IPAK
|
Paket: TO-251-3 Stub Leads, IPak |
Lager4.240 |
|
MOSFET (Metal Oxide) | 25V | 13.3A (Ta), 89A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 27nC @ 4.5V | 2241pF @ 12V | ±20V | - | 1.33W (Ta), 60W (Tc) | 4.7 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Stub Leads, IPak |
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Fairchild/ON Semiconductor |
MOSFET N-CH 60V 59A D2PAK
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Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Lager7.312 |
|
MOSFET (Metal Oxide) | 60V | 59A (Tc) | 4.5V, 10V | 3V @ 250µA | 53nC @ 10V | 1765pF @ 25V | ±16V | - | 130W (Tc) | 17 mOhm @ 59A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Fairchild/ON Semiconductor |
MOSFET N-CH 60V 20A TO-220
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Paket: TO-220-3 |
Lager27.000 |
|
MOSFET (Metal Oxide) | 60V | 20A (Tc) | 10V | 4V @ 250µA | 15nC @ 10V | 590pF @ 25V | ±25V | - | 53W (Tc) | 60 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Diodes Incorporated |
MOSFET P-CH 45V 0.09A SOT23-3
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Paket: TO-236-3, SC-59, SOT-23-3 |
Lager5.312 |
|
MOSFET (Metal Oxide) | 45V | 90mA (Ta) | 10V | 3.5V @ 1mA | - | 25pF @ 10V | ±20V | - | 330mW (Ta) | 14 Ohm @ 200mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 600V TO-252-3
|
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager5.584 |
|
MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 3.5V @ 200µA | 20.5nC @ 10V | 440pF @ 100V | ±20V | - | 63W (Tc) | 650 mOhm @ 2.4A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Honeywell Microelectronics & Precision Sensors |
MOSFET N-CH 55V 8-DIP
|
Paket: 8-CDIP Exposed Pad |
Lager2.496 |
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MOSFET (Metal Oxide) | 55V | - | 5V | 2.4V @ 100µA | 4.3nC @ 5V | 290pF @ 28V | 10V | - | 50W (Tj) | 400 mOhm @ 100mA, 5V | - | Through Hole | - | 8-CDIP Exposed Pad |
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IXYS |
MOSFET N-CH 200V 71A ISOPLUS247
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Paket: ISOPLUS247? |
Lager103.464 |
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MOSFET (Metal Oxide) | 200V | 71A (Tc) | 10V | 4V @ 4mA | 180nC @ 10V | 4600pF @ 25V | ±20V | - | 310W (Tc) | 28 mOhm @ 80A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247? | ISOPLUS247? |
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IXYS |
MOSFET N-CH 150V 110A TO-247
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Paket: TO-247-3 |
Lager5.872 |
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MOSFET (Metal Oxide) | 150V | 110A (Tc) | 10V | 4.5V @ 250µA | 150nC @ 10V | 8600pF @ 25V | ±20V | - | 480W (Tc) | 13 mOhm @ 500mA, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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TSC America Inc. |
MOSFET, SINGLE, P-CHANNEL, -30V,
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Paket: 8-SOIC (0.154", 3.90mm Width) |
Lager2.304 |
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MOSFET (Metal Oxide) | 30V | 34A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 56nC @ 10V | 3216pF @ 15V | ±20V | - | 14W (Tc) | 8.5 mOhm @ 13A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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TSC America Inc. |
MOSFET, SINGLE, P-CHANNEL, -30V,
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Paket: SOT-23-6 |
Lager304.380 |
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MOSFET (Metal Oxide) | 30V | 5A (Ta) | 4.5V, 10V | 3V @ 250µA | 27nC @ 10V | 551.57pF @ 15V | ±20V | - | 2W (Ta) | 60 mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-26 | SOT-23-6 |
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STMicroelectronics |
MOSFET N-CH 40V 80A D2PAK
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Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Lager2.080 |
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MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 4V @ 250µA | 54nC @ 10V | 2200pF @ 25V | ±20V | - | 110W (Tc) | 5.8 mOhm @ 40A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N CH 800V 14A D2PAK
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Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Lager9.624 |
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MOSFET (Metal Oxide) | 800V | 14A (Tc) | 10V | 5V @ 100µA | 32nC @ 10V | 1100pF @ 100V | ±30V | - | 190W (Tc) | 375 mOhm @ 7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Fairchild/ON Semiconductor |
MOSFET N-CH 40V 160A D2PAK-7
|
Paket: TO-263-7, D2Pak (6 Leads + Tab) |
Lager6.576 |
|
MOSFET (Metal Oxide) | 40V | 160A (Tc) | 10V | 3V @ 250µA | 167nC @ 10V | 11600pF @ 25V | ±20V | - | 283W (Tc) | 1.6 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263) | TO-263-7, D2Pak (6 Leads + Tab) |
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Nexperia USA Inc. |
MOSFET N-CH 75V 45A DPAK
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Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager172.596 |
|
MOSFET (Metal Oxide) | 75V | 45A (Tc) | 10V | 4V @ 1mA | 48nC @ 10V | 2385pF @ 25V | ±20V | - | 158W (Tc) | 26 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 40V 120A I2PAK
|
Paket: TO-262-3 Long Leads, I2Pak, TO-262AA |
Lager19.704 |
|
MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 4.5V @ 250µA | 377nC @ 10V | 20000pF @ 25V | ±20V | - | 300W (Tc) | 1.7 mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I2PAK (TO-262) | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Texas Instruments |
MOSFET N-CH 100V 50A 8VSON
|
Paket: 8-PowerVDFN |
Lager27.036 |
|
MOSFET (Metal Oxide) | 100V | 50A (Ta) | 6V, 10V | 3.6V @ 250µA | 21nC @ 10V | 1680pF @ 50V | ±20V | - | 2.8W (Ta), 83W (Tc) | 14.5 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON (3.3x3.3) | 8-PowerVDFN |
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Vishay Siliconix |
MOSFET P-CH 20V 26.6A 8-SOIC
|
Paket: 8-SOIC (0.154", 3.90mm Width) |
Lager433.620 |
|
MOSFET (Metal Oxide) | 20V | 26.6A (Tc) | 2.5V, 4.5V | 1.5V @ 250µA | 190nC @ 10V | 4600pF @ 10V | ±12V | - | 3W (Ta), 6.6W (Tc) | 6.2 mOhm @ 18A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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STMicroelectronics |
MOSFET N-CH 60V 5A 8-SOIC
|
Paket: 8-SOIC (0.154", 3.90mm Width) |
Lager962.520 |
|
MOSFET (Metal Oxide) | 60V | 5A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 17nC @ 5V | 1250pF @ 25V | ±20V | - | 2.5W (Tc) | 55 mOhm @ 2.5A, 10V | 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
AUTOMOTIVE N-CHANNEL 30 V (D-S)
|
Paket: - |
Lager9.000 |
|
MOSFET (Metal Oxide) | 30 V | 9A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 12 nC @ 10 V | 535 pF @ 25 V | ±20V | - | 13.6W (Tc) | 19mOhm @ 3A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | PowerPAK®SC-70W-6 | PowerPAK® SC-70-6 |
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Micro Commercial Co |
P-CHANNEL MOSFET,SOT-23
|
Paket: - |
Lager6.825 |
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MOSFET (Metal Oxide) | 30 V | 4.1A | 4.5V, 10V | 3V @ 250µA | - | 700 pF @ 15 V | ±20V | - | 1.3W | 60mOhm @ 4.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Rohm Semiconductor |
MOSFET N-CH 60V 5.5A HUML2020L8
|
Paket: - |
Lager45.528 |
|
MOSFET (Metal Oxide) | 60 V | 5.5A (Ta) | 4.5V, 10V | 2.7V @ 1mA | 7.8 nC @ 10 V | 400 pF @ 30 V | ±20V | - | 2W (Ta) | 43mOhm @ 5.5A, 10V | 150°C (TJ) | Surface Mount | HUML2020L8 | 8-PowerUDFN |
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MOSLEADER |
N 20V SOT-23
|
Paket: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Cambridge GaN Devices |
650V GAN HEMT, 130MOHM, DFN5X6.
|
Paket: - |
Lager14.655 |
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GaNFET (Gallium Nitride) | 650 V | 12A (Tc) | 9V, 20V | 4.2V @ 4.2mA | 2.3 nC @ 12 V | - | +20V, -1V | Current Sensing | - | 182mOhm @ 900mA, 12V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerVDFN |
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Microchip Technology |
TRANS SJT 1700V D3PAK
|
Paket: - |
Lager1.548 |
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SiCFET (Silicon Carbide) | 1700 V | 6A (Tc) | - | - | - | - | - | - | - | - | - | Surface Mount | D3PAK | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
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Infineon Technologies |
MOSFET N-CH 600V 23A HDSOP-10
|
Paket: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 23A (Tc) | 10V | 4V @ 390µA | 34 nC @ 10 V | 1320 pF @ 400 V | ±20V | - | 139W (Tc) | 102mOhm @ 7.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-HDSOP-10-1 | 10-PowerSOP Module |
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YAGEO XSEMI |
MOSFET P-CH 30V 3.2A SOT23
|
Paket: - |
Lager3.000 |
|
MOSFET (Metal Oxide) | 30 V | 3.2A (Ta) | 2.5V, 10V | 1.2V @ 250µA | 13.6 nC @ 4.5 V | 1296 pF @ 15 V | ±12V | - | 1.25W (Ta) | 60mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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onsemi |
MOSFET N-CH 50V 220MA SOT23-3
|
Paket: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 50 V | 220mA (Ta) | 4.5V, 10V | 1.5V @ 1mA | 2.4 nC @ 10 V | 27 pF @ 25 V | ±20V | - | 360mW (Ta) | 3.5Ohm @ 220mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | EFCP1313-4CC-037 | 4-XFBGA |