Bild |
Teilenummer |
Hersteller |
Beschreibung |
Paket |
Lager |
Anzahl |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N CH 40V 90A DIRECTFET MX
|
Paket: DirectFET? Isometric MX |
Lager6.096 |
|
MOSFET (Metal Oxide) | 40V | 90A (Tc) | 6V, 10V | 3.9V @ 150µA | 212nC @ 10V | 6852pF @ 25V | ±20V | - | 96W (Tc) | 1.4 mOhm @ 90A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DIRECTFET? MX | DirectFET? Isometric MX |
||
Infineon Technologies |
MOSFET N-CH 80V 45A TO262-3
|
Paket: TO-262-3 Long Leads, I2Pak, TO-262AA |
Lager3.456 |
|
MOSFET (Metal Oxide) | 80V | 45A (Tc) | 6V, 10V | 3.5V @ 33µA | 25nC @ 10V | 1730pF @ 40V | ±20V | - | 79W (Tc) | 13.9 mOhm @ 45A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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NXP |
MOSFET N-CH 25V 33A LFPAK
|
Paket: SC-100, SOT-669 |
Lager6.288 |
|
MOSFET (Metal Oxide) | 25V | 33A (Tc) | 4.5V, 10V | 1.95V @ 1mA | 8.3nC @ 10V | 528pF @ 12V | ±20V | - | 26W (Tc) | 12.6 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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ON Semiconductor |
MOSFET N-CH 24V 90A D2PAK
|
Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Lager17.400 |
|
MOSFET (Metal Oxide) | 24V | 90A (Ta) | 4.5V, 10V | 3V @ 250µA | 29nC @ 4.5V | 2120pF @ 20V | ±20V | - | 85W (Tc) | 5.8 mOhm @ 90A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 700V 7.5A I2PAK
|
Paket: TO-262-3 Long Leads, I2Pak, TO-262AA |
Lager22.020 |
|
MOSFET (Metal Oxide) | 700V | 7.5A (Tc) | 10V | 4.5V @ 100µA | 68nC @ 10V | 1370pF @ 25V | ±30V | - | 115W (Tc) | 1.2 Ohm @ 4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH TO252-3
|
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager3.872 |
|
MOSFET (Metal Oxide) | 650V | 8.7A (Tc) | 10V | 4.5V @ 345µA | 32nC @ 10V | 870pF @ 100V | ±20V | - | 83.3W (Tc) | 420 mOhm @ 3.4A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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IXYS |
MOSFET N-CH 1200V 26A PLUS247
|
Paket: TO-247-3 |
Lager5.840 |
|
MOSFET (Metal Oxide) | 1200V | 26A (Tc) | 10V | 6.5V @ 1mA | 225nC @ 10V | 16000pF @ 25V | ±30V | - | 960W (Tc) | 500 mOhm @ 13A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PLUS247?-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 600V 30A TO-247AD
|
Paket: TO-247-3 |
Lager391.296 |
|
MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 4.5V @ 4mA | 125nC @ 10V | 4700pF @ 25V | ±20V | - | 500W (Tc) | 230 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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ON Semiconductor |
MOSFET N-CH 40V 46A DFN5
|
Paket: 8-PowerTDFN, 5 Leads |
Lager5.696 |
|
MOSFET (Metal Oxide) | 40V | 46A (Ta), 330A (Tc) | 4.5V, 10V | 2V @ 250µA | 120nC @ 10V | 7700pF @ 20V | ±20V | - | 3.3W (Ta), 160W (Tc) | 0.8 mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Nexperia USA Inc. |
NX138BK/SOT23/TO-236AB
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Paket: - |
Lager4.448 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET N-CH 500V 12A TO220FP
|
Paket: TO-220-3 Full Pack |
Lager5.264 |
|
MOSFET (Metal Oxide) | 500V | 12A (Tc) | 10V | 4.5V @ 100µA | 69nC @ 10V | 1645pF @ 25V | ±30V | - | 39W (Tc) | 520 mOhm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Nexperia USA Inc. |
MOSFET N-CH 20V TO-236AB
|
Paket: TO-236-3, SC-59, SOT-23-3 |
Lager2.464 |
|
MOSFET (Metal Oxide) | 40V | 2.7A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 6nC @ 10V | 160pF @ 20V | ±20V | - | 490mW (Ta), 6.25W (Tc) | 75 mOhm @ 2.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB (SOT23) | TO-236-3, SC-59, SOT-23-3 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 600V TO-220-3
|
Paket: TO-220-3 |
Lager390.000 |
|
MOSFET (Metal Oxide) | 600V | 20.2A (Tc) | 10V | 3.5V @ 250µA | 74nC @ 10V | 2950pF @ 25V | ±20V | - | 208W (Tc) | 199 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 30V 15A 8SOIC
|
Paket: 8-SOIC (0.154", 3.90mm Width) |
Lager1.027.488 |
|
MOSFET (Metal Oxide) | 30V | 15A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 67nC @ 10V | 2525pF @ 15V | ±20V | - | 2.5W (Ta) | 6 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 20V 200MA SC89-3
|
Paket: SC-89, SOT-490 |
Lager463.188 |
|
MOSFET (Metal Oxide) | 20V | 200mA (Ta) | 1.5V, 4.5V | 1.2V @ 250µA | 0.75nC @ 4.5V | - | ±6V | - | 300mW (Ta) | 5 Ohm @ 200mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SC-89-3 | SC-89, SOT-490 |
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IXYS |
MOSFET N-CH 650V 48A TO-247
|
Paket: TO-247-3 |
Lager6.996 |
|
MOSFET (Metal Oxide) | 650V | 48A (Tc) | 10V | 4.5V @ 4mA | 77nC @ 10V | 4420pF @ 25V | ±30V | - | 660W (Tc) | 68 mOhm @ 24A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 55V 42A DPAK
|
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager365.100 |
|
MOSFET (Metal Oxide) | 55V | 42A (Tc) | 4.5V, 10V | 3V @ 250µA | 35nC @ 5V | 1570pF @ 25V | ±16V | - | 110W (Tc) | 13.5 mOhm @ 36A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 600V 52A TO247-4
|
Paket: TO-247-4 |
Lager9.576 |
|
MOSFET (Metal Oxide) | 600V | 52A (Tc) | 10V | 4V @ 250µA | 91nC @ 10V | 3750pF @ 100V | ±25V | - | 350W (Tc) | 55 mOhm @ 26A, 10V | 150°C (TJ) | Through Hole | TO-247-4L | TO-247-4 |
||
STMicroelectronics |
MOSFET N-CH 800V 9A TO-220FP
|
Paket: TO-220-3 Full Pack |
Lager4.464 |
|
MOSFET (Metal Oxide) | 800V | 9A (Tc) | 10V | 5V @ 100µA | 22nC @ 10V | 635pF @ 100V | ±30V | - | 30W (Tc) | 600 mOhm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 6A
|
Paket: SOT-23-3 Flat Leads |
Lager27.114 |
|
MOSFET (Metal Oxide) | 60V | 6A (Ta) | 4V, 10V | 2.5V @ 100µA | 9.3nC @ 10V | 550pF @ 10V | ±20V | - | 1.2W (Ta) | 36 mOhm @ 5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 600V 11A TO252
|
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager235.560 |
|
MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 4.1V @ 250µA | 11nC @ 10V | 545pF @ 100V | ±30V | - | 208W (Tc) | 399 mOhm @ 3.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia USA Inc. |
PSMN2R0-55YLH/SOT1023/4 LEADS
|
Paket: - |
Lager57.702 |
|
MOSFET (Metal Oxide) | 55 V | 200A (Ta) | 4.5V, 10V | 2.2V @ 1mA | 184 nC @ 10 V | 11353 pF @ 27 V | ±20V | - | 333W (Ta) | 2.1mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SOT-1023, 4-LFPAK |
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STMicroelectronics |
HIP247 IN LINE
|
Paket: - |
Lager1.707 |
|
SiCFET (Silicon Carbide) | 1700 V | 7A (Tc) | 20V | 3.5V @ 1mA | 13.3 nC @ 20 V | 133 pF @ 1000 V | +22V, -10V | - | 96W (Tc) | 1.3Ohm @ 3A, 20V | -55°C ~ 200°C (TJ) | Through Hole | HiP247™ | TO-247-3 |
||
Nuvoton Technology Corporation |
SINGLE NCH MOSFET 12V, 3.4A, 27M
|
Paket: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 12 V | 3.4A (Ta) | 1.5V, 4.5V | 1V @ 236µA | 5.8 nC @ 4.5 V | 275 pF @ 10 V | ±8V | - | 360mW (Ta) | 30mOhm @ 1.5A, 4.5V | 150°C | Surface Mount | 4-CSP (0.8x0.8) | 4-XFLGA, CSP |
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Goford Semiconductor |
P-CH,-100V,-24A,RD(MAX)<85M@-10V
|
Paket: - |
Lager2.694 |
|
MOSFET (Metal Oxide) | 100 V | 24A (Tc) | 10V | 3V @ 250µA | 40 nC @ 10 V | 1940 pF @ 50 V | ±20V | - | 79W (Tc) | 85mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 600V 31A TO263-3
|
Paket: - |
Lager3.063 |
|
MOSFET (Metal Oxide) | 600 V | 31A (Tc) | 10V | 4.5V @ 760µA | 67 nC @ 10 V | 2721 pF @ 400 V | ±20V | - | 156W (Tc) | 70mOhm @ 15.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
650V DTMOS VI TO-220 110MOHM
|
Paket: - |
Lager318 |
|
MOSFET (Metal Oxide) | 650 V | 24A (Ta) | 10V | 4V @ 1.02mA | 40 nC @ 10 V | 2250 pF @ 300 V | ±30V | - | 190W (Tc) | 110mOhm @ 12A, 10V | 150°C | Through Hole | TO-220 | TO-220-3 |
||
Vishay Siliconix |
N-CHANNEL 20-V (D-S) MOSFET
|
Paket: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 6.2A (Ta), 7.9A (Tc) | 1.8V, 4.5V | 1V @ 250µA | 18 nC @ 8 V | 666 pF @ 10 V | ±8V | - | 1.7W (Ta), 2.7W (Tc) | 28mOhm @ 5.1A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
||
Rohm Semiconductor |
650V 35A, TO-220AB, HIGH-SPEED S
|
Paket: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 35A (Tc) | 10V | 5V @ 1.3mA | 72 nC @ 10 V | 3000 pF @ 25 V | ±20V | - | 370W (Tc) | 115mOhm @ 18.1A, 10V | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 40V 64A 6VSON
|
Paket: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 64A (Tc) | 4.5V, 10V | 2.3V @ 250µA | 12 nC @ 10 V | 870 pF @ 20 V | ±20V | - | 2.1W (Ta), 39.1W (Tc) | 5.75mOhm @ 20A, 10V | -55°C ~ 155°C (TJ) | Surface Mount | PG-VSON-6-1 | 6-PowerVDFN |