Bild |
Teilenummer |
Hersteller |
Beschreibung |
Paket |
Lager |
Anzahl |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 30V 4.6A SOT223
|
Paket: TO-261-4, TO-261AA |
Lager559.200 |
|
MOSFET (Metal Oxide) | 30V | 4.6A (Ta) | 4.5V, 10V | 1V @ 250µA | 50nC @ 10V | 840pF @ 25V | ±16V | - | 1W (Ta) | 31 mOhm @ 4.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Vishay Siliconix |
MOSFET N-CH 30V 42A TO252
|
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager42.876 |
|
MOSFET (Metal Oxide) | 30V | 42A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 100nC @ 10V | 3535pF @ 15V | ±20V | - | 2.5W (Ta), 73.5W (Tc) | 3.9 mOhm @ 22A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Renesas Electronics America |
MOSFET N-CH 40V 60A TO-263
|
Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Lager6.160 |
|
MOSFET (Metal Oxide) | 40V | 60A (Tc) | 10V | 4V @ 250µA | 95nC @ 10V | 5100pF @ 25V | ±20V | - | 1.8W (Ta), 88W (Tc) | 6.1 mOhm @ 30A, 10V | 175°C (TJ) | Surface Mount | TO-263 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 30V 2.5A SOT-23
|
Paket: TO-236-3, SC-59, SOT-23-3 |
Lager555.084 |
|
MOSFET (Metal Oxide) | 30V | 2.5A (Ta) | 4.5V, 10V | 3V @ 250µA | 15nC @ 10V | 400pF @ 15V | ±20V | - | 710mW (Ta) | 72 mOhm @ 2.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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IXYS |
MOSFET N-CH 85V 80A ISOPLUS220
|
Paket: ISOPLUS220? |
Lager7.104 |
|
MOSFET (Metal Oxide) | 85V | 80A (Tc) | 10V | 4V @ 4mA | 180nC @ 10V | 4800pF @ 25V | ±20V | - | 230W (Tc) | 11 mOhm @ 40A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS220? | ISOPLUS220? |
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ON Semiconductor |
MOSFET N-CH 60V 60A TO220AB
|
Paket: TO-220-3 |
Lager390.000 |
|
MOSFET (Metal Oxide) | 60V | 60A (Ta) | 5V | 2V @ 250µA | 65nC @ 5V | 3075pF @ 25V | ±15V | - | 2.4W (Ta), 150W (Tj) | 16 mOhm @ 30A, 5V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 60V 27A TO220AB
|
Paket: TO-220-3 |
Lager2.864 |
|
MOSFET (Metal Oxide) | 60V | 27A (Ta) | 10V | 4V @ 250µA | 30nC @ 10V | 1015pF @ 25V | ±20V | - | 88.2W (Tc) | 46 mOhm @ 13.5A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 600V 13.5A TO-247
|
Paket: TO-247-3 |
Lager3.856 |
|
MOSFET (Metal Oxide) | 600V | 13.5A (Tc) | 10V | 4.5V @ 100µA | 75nC @ 10V | 2220pF @ 25V | ±30V | - | 160W (Tc) | 500 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 650V 8.7A TO252
|
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager2.832 |
|
MOSFET (Metal Oxide) | 650V | 8.7A (Tc) | 10V | 4.5V @ 340µA | 32nC @ 10V | 870pF @ 100V | ±20V | - | 83.3W (Tc) | 420 mOhm @ 3.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 60V 45A TO263-3
|
Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Lager7.712 |
|
MOSFET (Metal Oxide) | 60V | 45A (Tc) | 10V | 4V @ 34µA | 47nC @ 10V | 3785pF @ 25V | ±20V | - | 71W (Tc) | 9.4 mOhm @ 45A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 1200V 15A ISOPLUS247
|
Paket: ISOPLUS247? |
Lager3.952 |
|
MOSFET (Metal Oxide) | 1200V | 15A (Tc) | 10V | 6.5V @ 1mA | 225nC @ 10V | 14000pF @ 25V | ±30V | - | 320W (Tc) | 500 mOhm @ 13A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247? | ISOPLUS247? |
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Vishay Siliconix |
MOSFET N-CH 100V 17A TO220FP
|
Paket: TO-220-3 Full Pack, Isolated Tab |
Lager4.896 |
|
MOSFET (Metal Oxide) | 100V | 17A (Tc) | 4V, 5V | 2V @ 250µA | 64nC @ 5V | 2200pF @ 25V | ±10V | - | 48W (Tc) | 77 mOhm @ 10A, 5V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 34A 8SOP-ADV
|
Paket: 8-PowerVDFN |
Lager4.400 |
|
MOSFET (Metal Oxide) | 30V | 34A (Ta) | 4.5V, 10V | 2V @ 500µA | 115nC @ 10V | 4800pF @ 10V | +20V, -25V | - | 1.6W (Ta), 45W (Tc) | 4.8 mOhm @ 17A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Microchip Technology |
MOSFET N-CH 300V 0.085A SOT23-3
|
Paket: TO-236-3, SC-59, SOT-23-3 |
Lager20.160 |
|
MOSFET (Metal Oxide) | 300V | 85mA (Tj) | 4.5V | 2.4V @ 1mA | - | 50pF @ 25V | ±20V | - | 360mW (Tc) | 25 Ohm @ 120mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB (SOT23) | TO-236-3, SC-59, SOT-23-3 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH
|
Paket: 8-PowerSMD, Flat Leads |
Lager17.760 |
|
MOSFET (Metal Oxide) | 30V | 36A (Ta), 85A (Tc) | 4.5V, 10V | 2V @ 250µA | 65nC @ 10V | 3290pF @ 15V | ±12V | - | 6.2W (Ta), 48W (Tc) | 3.2 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
||
IXYS |
MOSFET N-CH 650V 12A TO-220
|
Paket: TO-220-3 |
Lager5.344 |
|
MOSFET (Metal Oxide) | 650V | 12A (Tc) | 10V | 5V @ 250µA | 17nC @ 10V | 1100pF @ 25V | ±30V | - | 180W (Tc) | 300 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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TSC America Inc. |
MOSFET, SINGLE, N-CHANNEL, TRENC
|
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager3.312 |
|
MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 7.7nC @ 4.5V | 680pF @ 25V | ±20V | - | 40W (Tc) | 9 mOhm @ 16A, 10V | 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 60V 13A 8DFN
|
Paket: 8-PowerSMD, Flat Leads |
Lager11.064 |
|
MOSFET (Metal Oxide) | 60V | 13A (Ta), 80A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 40nC @ 10V | 3420pF @ 30V | ±20V | - | 2.3W (Ta), 83W (Tc) | 6.4 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
||
Infineon Technologies |
MOSFET N-CH 600V TO-252-3
|
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager4.416 |
|
MOSFET (Metal Oxide) | 600V | 4.3A (Tc) | 10V | 3.5V @ 130µA | 13nC @ 10V | 280pF @ 100V | ±20V | - | 37W (Tc) | 1 Ohm @ 1.5A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 30V 3.9A SOT223
|
Paket: TO-261-4, TO-261AA |
Lager16.548 |
|
MOSFET (Metal Oxide) | 30V | 3.9A (Ta) | 4V, 10V | 2.4V @ 250µA | 14nC @ 5V | 530pF @ 25V | ±16V | - | 1W (Ta) | 45 mOhm @ 3.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Fairchild/ON Semiconductor |
MOSFET N-CH 600V 25A TO-247
|
Paket: TO-247-3 |
Lager72.000 |
|
MOSFET (Metal Oxide) | 600V | 25A (Tc) | 10V | 4V @ 250µA | 74nC @ 10V | 3352pF @ 100V | ±30V | - | 216W (Tc) | 126 mOhm @ 12.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
Infineon Technologies |
MOSFET N-CH 300V 38A TO-220PAK
|
Paket: TO-220-3 |
Lager15.006 |
|
MOSFET (Metal Oxide) | 300V | 38A (Tc) | 10V | 5V @ 250µA | 125nC @ 10V | 5168pF @ 50V | ±20V | - | 341W (Tc) | 69 mOhm @ 24A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
STMicroelectronics |
MOSFET N CH 200V 30A D2PAK
|
Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Lager22.728 |
|
MOSFET (Metal Oxide) | 200V | 30A (Tc) | 5V | 3V @ 250µA | 65nC @ 10V | 1990pF @ 25V | ±20V | - | 150W (Tc) | 75 mOhm @ 15A, 5V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Diodes Incorporated |
MOSFET N-CH 60V 35A POWERDI3333
|
Paket: - |
Lager6.000 |
|
MOSFET (Metal Oxide) | 60 V | 35A (Tc) | 4.5V, 10V | 3V @ 250µA | 55 nC @ 10 V | 2711 pF @ 15 V | ±20V | - | 1W (Ta) | 18mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 (Type UX) | 8-PowerVDFN |
||
Diodes Incorporated |
MOSFET P-CH 20V 530MA 3DFN
|
Paket: - |
Lager92.553 |
|
MOSFET (Metal Oxide) | 20 V | 530mA (Ta) | 1.5V, 4.5V | 1V @ 250µA | 0.4 nC @ 4.5 V | 28.7 pF @ 15 V | ±8V | - | 820mW (Ta) | 1.9Ohm @ 100mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | X2-DFN0604-3 | 3-XFDFN |
||
Toshiba Semiconductor and Storage |
UMOS10 DPAK 80V 5.1MOHM
|
Paket: - |
Lager46.704 |
|
MOSFET (Metal Oxide) | 80 V | 84A (Tc) | 6V, 10V | 3.5V @ 700µA | 56 nC @ 10 V | 3980 pF @ 40 V | ±20V | - | 104W (Tc) | 5.1mOhm @ 42A, 10V | 175°C | Surface Mount | DPAK | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
International Rectifier |
N-CHANNEL HERMETIC MOS HEXFET
|
Paket: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 250 V | 8.4A | - | - | - | - | - | - | 74W | - | - | Through Hole | TO-204AA (TO-3) | TO-204AA, TO-3 |
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Vishay Siliconix |
MOSFET N-CH 40V 100A PPAK SO-8
|
Paket: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 4.5V, 10V | 2.3V @ 250µA | 204 nC @ 10 V | 10500 pF @ 20 V | +20V, -16V | - | 104W (Tc) | 0.88mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |