Bild |
Teilenummer |
Hersteller |
Beschreibung |
Paket |
Lager |
Anzahl |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Infineon Technologies |
MOSFET P-CH 14V 11A 8-SOIC
|
Paket: 8-SOIC (0.154", 3.90mm Width) |
Lager6.984 |
|
MOSFET (Metal Oxide) | 14V | 11A (Ta) | 2.5V, 4.5V | 600mV @ 250µA | 125nC @ 5V | 8075pF @ 10V | ±12V | - | 2.5W (Ta) | 12 mOhm @ 11A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 650V 21.7A TO-220
|
Paket: TO-220-3 |
Lager3.584 |
|
MOSFET (Metal Oxide) | 650V | 21.7A (Tc) | 10V | 5V @ 1.2mA | 143nC @ 10V | 3160pF @ 25V | ±20V | - | 240W (Tc) | 185 mOhm @ 15.4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 30V 21A 8-SOIC
|
Paket: 8-SOIC (0.154", 3.90mm Width) |
Lager5.312 |
|
MOSFET (Metal Oxide) | 30V | 21A (Ta) | 4.5V, 10V | 2.35V @ 250µA | 60nC @ 4.5V | 6240pF @ 15V | ±12V | - | 2.5W (Ta) | 3.6 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 30A DPAK
|
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager297.888 |
|
MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 2V @ 85µA | 68nC @ 10V | 2530pF @ 25V | ±20V | - | 136W (Tc) | 6.7 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Microsemi Corporation |
MOSFET N-CH TO-204AA TO-3
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Paket: TO-204AA, TO-3 |
Lager7.952 |
|
MOSFET (Metal Oxide) | 100V | 14A (Tc) | 10V | 4V @ 250µA | 35nC @ 10V | - | ±20V | - | 4W (Ta), 75W (Tc) | 210 mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-204AA | TO-204AA, TO-3 |
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Renesas Electronics America |
MOSFET N-CH 40V 75A 8HSON
|
Paket: 8-SMD, Flat Lead Exposed Pad |
Lager5.552 |
|
MOSFET (Metal Oxide) | 40V | 75A (Tc) | 10V | 4V @ 250µA | 96nC @ 10V | 5430pF @ 25V | ±20V | - | 1W (Ta), 120W (Tc) | 5.5 mOhm @ 37.5A, 10V | 175°C (TJ) | Surface Mount | 8-HSON | 8-SMD, Flat Lead Exposed Pad |
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Nexperia USA Inc. |
MOSFET N-CH 30V 100A LFPAK
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Paket: SOT-1023, 4-LFPAK |
Lager2.016 |
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MOSFET (Metal Oxide) | 30V | 100A (Tc) | - | 2.15V @ 1mA | 100nC @ 10V | 6227pF @ 12V | - | - | - | 1.3 mOhm @ 15A, 10V | - | Surface Mount | LFPAK56, Power-SO8 | SOT-1023, 4-LFPAK |
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ON Semiconductor |
MOSFET N-CH 25V 49A SGL IPAK
|
Paket: TO-251-3 Stub Leads, IPak |
Lager6.336 |
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MOSFET (Metal Oxide) | 25V | 9.2A (Ta), 49A (Tc) | - | 2.5V @ 250µA | 17.8nC @ 10V | 990pF @ 12V | - | - | 1.27W (Ta), 36.6W (Tc) | 9.3 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Stub Leads, IPak |
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Fairchild/ON Semiconductor |
MOSFET N-CH 200V 18A TO-220F
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Paket: TO-220-3 Full Pack, Formed Leads |
Lager73.320 |
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MOSFET (Metal Oxide) | 200V | 18A (Tc) | 10V | 5V @ 250µA | 26nC @ 10V | 1080pF @ 25V | ±30V | - | 40W (Tc) | 140 mOhm @ 9A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F-3 (Y-Forming) | TO-220-3 Full Pack, Formed Leads |
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Fairchild/ON Semiconductor |
MOSFET N-CH 100V 6.3A 8-SOIC
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Paket: 8-SOIC (0.154", 3.90mm Width) |
Lager203.748 |
|
MOSFET (Metal Oxide) | 100V | 6.3A (Ta) | 6V, 10V | 4V @ 250µA | 80nC @ 10V | 2490pF @ 50V | ±20V | - | 2.5W (Ta) | 32 mOhm @ 6.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 900V 3A TO-3PN
|
Paket: TO-3P-3, SC-65-3 |
Lager5.696 |
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MOSFET (Metal Oxide) | 900V | 3A (Ta) | 10V | 4V @ 1mA | 25nC @ 10V | 750pF @ 25V | ±30V | - | 125W (Tc) | 4.3 Ohm @ 1.5A, 10V | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 150V 6.9A TO-220F
|
Paket: TO-220-3 Full Pack |
Lager2.192 |
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MOSFET (Metal Oxide) | 150V | 6.9A (Tc) | 10V | 4V @ 250µA | 13nC @ 10V | 410pF @ 25V | ±25V | - | 44W (Tc) | 400 mOhm @ 3.45A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Fairchild/ON Semiconductor |
MOSFET N-CH 200V 5.3A DPAK
|
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager161.100 |
|
MOSFET (Metal Oxide) | 200V | 5.3A (Tc) | 10V | 5V @ 250µA | 10nC @ 10V | 400pF @ 25V | ±30V | - | 2.5W (Ta), 45W (Tc) | 690 mOhm @ 2.65A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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IXYS |
MOSFET N-CH 500V 20A TO-247AD
|
Paket: TO-3P-3 Full Pack |
Lager15.828 |
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MOSFET (Metal Oxide) | 500V | 20A (Tc) | 10V | 4V @ 250µA | 210nC @ 10V | 4200pF @ 25V | ±20V | - | 260W (Tc) | 270 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD | TO-3P-3 Full Pack |
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Vishay Siliconix |
MOSFET P-CH 60V 11A D2PAK
|
Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Lager7.696 |
|
MOSFET (Metal Oxide) | 60V | 11A (Tc) | 10V | 4V @ 250µA | 19nC @ 10V | 570pF @ 25V | ±20V | - | 3.7W (Ta), 60W (Tc) | 280 mOhm @ 6.6A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 500V 14A TO-247AC
|
Paket: TO-247-3 |
Lager14.988 |
|
MOSFET (Metal Oxide) | 500V | 14A (Tc) | 10V | 4V @ 250µA | 150nC @ 10V | 2600pF @ 25V | ±20V | - | 190W (Tc) | 400 mOhm @ 8.4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 55V 18A D2PAK
|
Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Lager16.224 |
|
MOSFET (Metal Oxide) | 55V | 18A (Tc) | 4V, 10V | 2V @ 250µA | 15nC @ 5V | 480pF @ 25V | ±16V | - | 3.8W (Ta), 45W (Tc) | 60 mOhm @ 11A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 1200V 17A PLUS247
|
Paket: TO-247-3 |
Lager6.912 |
|
MOSFET (Metal Oxide) | 1200V | 17A (Tc) | 20V | 5V @ 250µA | 155nC @ 15V | 8300pF @ 25V | ±30V | - | 700W (Tc) | 900 mOhm @ 8.5A, 20V | -55°C ~ 150°C (TJ) | Through Hole | PLUS247?-3 | TO-247-3 |
||
Renesas Electronics America |
MOSFET N-CH 500V 6A TO220
|
Paket: TO-220-3 Full Pack |
Lager3.616 |
|
MOSFET (Metal Oxide) | 500V | 6A (Ta) | 10V | - | - | 600pF @ 25V | ±30V | - | 27.4W (Tc) | 1.3 Ohm @ 3A, 10V | 150°C (TJ) | Through Hole | TO-220FL | TO-220-3 Full Pack |
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Diodes Incorporated |
MOSFET NCH 40V 13A POWERDI
|
Paket: 8-PowerTDFN |
Lager3.248 |
|
MOSFET (Metal Oxide) | 40V | 13A (Ta), 80A (Tc) | 10V | 4V @ 250µA | 25.5nC @ 10V | 1405pF @ 20V | ±20V | - | 1.5W (Ta), 100W (Tc) | 10 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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STMicroelectronics |
MOSFET N-CH 150V 5A 8SO
|
Paket: 8-SOIC (0.154", 3.90mm Width) |
Lager30.000 |
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MOSFET (Metal Oxide) | 150V | 5A (Tc) | 10V | 4V @ 250µA | 48nC @ 10V | 2710pF @ 25V | ±20V | - | 2.5W (Tc) | 63 mOhm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
MOSFET P-CH 45V 6A 8-SOIC
|
Paket: 8-SOIC (0.154", 3.90mm Width) |
Lager16.356 |
|
MOSFET (Metal Oxide) | 45V | 6A (Ta) | 4V, 10V | - | 32.2nC @ 5V | 2700pF @ 10V | ±20V | - | 2W (Ta) | 36 mOhm @ 6A, 10V | - | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET N-CH 100V 58A TO220-3
|
Paket: TO-220-3 |
Lager16.656 |
|
MOSFET (Metal Oxide) | 100V | 58A (Tc) | 6V, 10V | 3.5V @ 46µA | 35nC @ 10V | 2500pF @ 50V | ±20V | - | 94W (Tc) | 12.3 mOhm @ 46A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 100V 50A TO-220
|
Paket: TO-220-3 |
Lager8.040 |
|
MOSFET (Metal Oxide) | 100V | 50A (Tc) | 7.5V, 10V | 4V @ 250µA | 50nC @ 10V | 1950pF @ 50V | ±20V | - | 125W (Tc) | 8.9 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Nexperia USA Inc. |
MOSFET N-CH 100V 57A D2PAK
|
Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Lager29.046 |
|
MOSFET (Metal Oxide) | 100V | 57A (Tj) | 10V | 4V @ 1mA | 49nC @ 10V | 2404pF @ 50V | ±20V | - | 148W (Tc) | 16 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Diodes Incorporated |
MOSFET N-CH 30V PWRDI3333-8
|
Paket: 8-PowerWDFN |
Lager18.846 |
|
MOSFET (Metal Oxide) | 30V | 5.3A (Ta) | 4.5V, 10V | 2.1V @ 250µA | 17.4nC @ 10V | 751pF @ 10V | ±25V | - | 900mW (Ta) | 18 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerWDFN |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 600V 22A TO-220F
|
Paket: TO-220-3 Full Pack |
Lager15.012 |
|
MOSFET (Metal Oxide) | 600V | 22A (Tc) | 10V | 4V @ 250µA | 45nC @ 10V | 1950pF @ 100V | ±45V | - | 39W (Tc) | 165 mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
||
STMicroelectronics |
MOSFET N-CH 800V 6A TO220
|
Paket: TO-220-3 |
Lager15.804 |
|
MOSFET (Metal Oxide) | 800V | 6A (Tc) | 10V | 5V @ 100µA | 13.4nC @ 10V | 360pF @ 100V | ±30V | - | 110W (Tc) | 1.2 Ohm @ 3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Texas Instruments |
MOSFET N-CH 30V 87A 8SON
|
Paket: 8-PowerTDFN |
Lager19.620 |
|
MOSFET (Metal Oxide) | 30V | 16A (Ta), 87A (Tc) | 3V, 8V | 1.7V @ 250µA | 7nC @ 4.5V | 950pF @ 15V | +10V, -8V | - | 3W (Ta) | 7.9 mOhm @ 14A, 8V | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON (5x6) | 8-PowerTDFN |
||
Texas Instruments |
MOSFET N-CH 30V 5A 6SON
|
Paket: 6-WDFN Exposed Pad |
Lager1.425.960 |
|
MOSFET (Metal Oxide) | 30V | 5A (Tc) | 3V, 8V | 1.8V @ 250µA | 2.7nC @ 4.5V | 340pF @ 15V | +10V, -8V | - | 2.3W (Ta) | 30 mOhm @ 4A, 8V | -55°C ~ 150°C (TJ) | Surface Mount | 6-WSON (2x2) | 6-WDFN Exposed Pad |