Bild |
Teilenummer |
Hersteller |
Beschreibung |
Paket |
Lager |
Anzahl |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET P-CH 60V 18.6A TO-252
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Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager1.109.232 |
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MOSFET (Metal Oxide) | 60V | 18.6A (Tc) | 10V | 4V @ 1mA | 33nC @ 10V | 860pF @ 25V | ±20V | - | 80W (Tc) | 130 mOhm @ 13.2A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 30V 3.4A 6TSOP
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Paket: SOT-23-6 Thin, TSOT-23-6 |
Lager457.188 |
|
MOSFET (Metal Oxide) | 30V | 3.4A (Ta) | 4.5V, 10V | 3V @ 250µA | 15nC @ 10V | - | ±20V | - | 1.14W (Ta) | 60 mOhm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
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ON Semiconductor |
MOSFET N-CH 25V 9.5A DPAK
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Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager30.036 |
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MOSFET (Metal Oxide) | 25V | 9.5A (Ta), 32A (Tc) | 4.5V, 10V | 2V @ 250µA | 16nC @ 5V | 1400pF @ 20V | ±20V | - | 1.3W (Ta), 50W (Tc) | 8.4 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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IXYS |
MOSFET N-CH 500V 26A PLUS220-SMD
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Paket: PLUS-220SMD |
Lager6.384 |
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MOSFET (Metal Oxide) | 500V | 26A (Tc) | 10V | 5.5V @ 250µA | 65nC @ 10V | 3600pF @ 25V | ±30V | - | 460W (Tc) | 230 mOhm @ 13A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PLUS-220SMD | PLUS-220SMD |
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Fairchild/ON Semiconductor |
MOSFET N-CH 60V 31A TO-220F
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Paket: TO-220-3 Full Pack |
Lager58.644 |
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MOSFET (Metal Oxide) | 60V | 31A (Tc) | 10V | 4V @ 250µA | 41nC @ 10V | 1540pF @ 25V | ±25V | - | 47W (Tc) | 22 mOhm @ 15.5A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Diodes Incorporated |
MOSFET N-CH 100V 170MA SOT23-3
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Paket: TO-236-3, SC-59, SOT-23-3 |
Lager4.928 |
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MOSFET (Metal Oxide) | 100V | 170mA (Ta) | 4.5V, 10V | 2V @ 1mA | - | 25pF @ 25V | ±20V | - | 360mW (Ta) | 6 Ohm @ 170mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET N-CH 100V 9.2A D2PAK
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Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Lager6.688 |
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MOSFET (Metal Oxide) | 100V | 9.2A (Tc) | 4V, 5V | 2V @ 250µA | 12nC @ 5V | 490pF @ 25V | ±10V | - | 3.7W (Ta), 60W (Tc) | 270 mOhm @ 5.5A, 5V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 10A 8-SOIC
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Paket: 8-SOIC (0.154", 3.90mm Width) |
Lager37.332 |
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MOSFET (Metal Oxide) | 30V | 10A (Ta) | 4.5V, 10V | 1V @ 250µA | 45nC @ 10V | 1585pF @ 15V | ±20V | - | 2.5W (Ta) | 13.5 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Sanken |
MOSFET N-CH 250V 50A TO-3PF
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Paket: TO-3P-3 Full Pack |
Lager6.780 |
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MOSFET (Metal Oxide) | 250V | 50A (Ta) | 10V | 4.5V @ 1mA | - | 3800pF @ 25V | ±30V | - | 85W (Tc) | 43 mOhm @ 25A, 10V | 150°C (TJ) | Through Hole | TO-3P | TO-3P-3 Full Pack |
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Fairchild/ON Semiconductor |
MOSFET N-CH 200V 70A TO-3P
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Paket: TO-3P-3, SC-65-3 |
Lager6.176 |
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MOSFET (Metal Oxide) | 200V | 70A (Tc) | 10V | 5V @ 250µA | 86nC @ 10V | 3970pF @ 25V | ±30V | - | 417W (Tc) | 35 mOhm @ 35A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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IXYS |
MOSFET N-CH 200V 36A TO-220
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Paket: TO-220-3 |
Lager4.768 |
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MOSFET (Metal Oxide) | 200V | 36A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole | TO-220AB | TO-220-3 |
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Renesas Electronics America |
MOSFET N-CH 30V 45A WPAK
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Paket: 8-WFDFN Exposed Pad |
Lager28.740 |
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MOSFET (Metal Oxide) | 30V | 45A (Ta) | 4.5V, 10V | - | 21.2nC @ 4.5V | 3850pF @ 10V | ±20V | - | 40W (Tc) | 2.8 mOhm @ 22.5A, 10V | 150°C (TJ) | Surface Mount | 8-WPAK | 8-WFDFN Exposed Pad |
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STMicroelectronics |
MOSFET N-CH 200V 140A ISOTOP
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Paket: ISOTOP |
Lager3.904 |
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MOSFET (Metal Oxide) | 200V | 140A | 10V | 4V @ 250µA | 338nC @ 10V | 11100pF @ 25V | ±20V | - | 500W (Tc) | 12 mOhm @ 70A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP? | ISOTOP |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 5.8A IPAK-OS
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Paket: TO-251-3 Stub Leads, IPak |
Lager8.172 |
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MOSFET (Metal Oxide) | 650V | 5.8A (Ta) | 10V | 3.5V @ 180µA | 11nC @ 10V | 390pF @ 300V | ±30V | - | 60W (Tc) | 1.05 Ohm @ 2.9A, 10V | 150°C (TJ) | Through Hole | I-Pak | TO-251-3 Stub Leads, IPak |
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Diodes Incorporated |
MOSFET N-CH 20V 8.3A 8-SOIC
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Paket: 8-SOIC (0.154", 3.90mm Width) |
Lager397.968 |
|
MOSFET (Metal Oxide) | 20V | 8.3A (Ta) | 2.5V, 4.5V | 700mV @ 250µA | 18.9nC @ 4.5V | 1900pF @ 10V | ±12V | - | 1.56W (Ta) | 20 mOhm @ 11A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 30V 26.5A SO8FL
|
Paket: 8-PowerTDFN |
Lager5.200 |
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MOSFET (Metal Oxide) | 30V | 26.5A (Ta), 207A (Tc) | 4.5V, 10V | 2.2V @ 1mA | 84nC @ 10V | 6000pF @ 15V | ±20V | - | 1.5W (Ta) | 1.3 mOhm @ 25A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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EPC |
TRANS GAN 100V 1A BUMPED DIE
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Paket: Die |
Lager5.327.856 |
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GaNFET (Gallium Nitride) | 100V | 1A (Ta) | 5V | 2.5V @ 600µA | 0.91nC @ 5V | 90pF @ 50V | +6V, -4V | - | - | 65 mOhm @ 1A, 5V | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Vishay Siliconix |
MOSFET N-CH 60V 45.6A/2.4A PPAK
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Paket: - |
Lager46.914 |
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MOSFET (Metal Oxide) | 60 V | 45.6A (Ta), 2.4A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 135 nC @ 10 V | 5900 pF @ 30 V | ±20V | - | 6.25W (Ta), 125W (Tc) | 1.5mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8DC | PowerPAK® SO-8 |
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Micro Commercial Co |
MOSFET
|
Paket: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 280mA (Ta) | 4.5V, 10V | 2.8V @ 250µA | 2 nC @ 10 V | 60 pF @ 25 V | ±20V | - | 780mW (Tj) | 6Ohm @ 170mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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onsemi |
MOSFET N-CH 40V 50A/300A 8HPSOF
|
Paket: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 50A (Ta), 300A (Tc) | 10V | 4V @ 250µA | 108 nC @ 10 V | 6985 pF @ 25 V | +20V, -16V | - | 4.3W (Ta), 159.6W (Tc) | 0.95mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-HPSOF | 8-PowerSFN |
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Micro Commercial Co |
MOSFET N-CH 60VDS 20VGS 20A 4.1N
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Paket: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 20A | 10V | 3V @ 250µA | 12 nC @ 10 V | 500 pF @ 30 V | ±20V | - | - | 45mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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UMW |
30V 2.6A 130MR@10V,2.6A 1.4W 3V@
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Paket: - |
Lager8.970 |
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MOSFET (Metal Oxide) | 30 V | 2.6A (Ta) | 4.5V, 10V | 3V @ 250µA | 9 nC @ 10 V | 370 pF @ 15 V | ±20V | - | 1.4W (Ta) | 130mOhm @ 2.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Comchip Technology |
MOSFET N-CH 40V 70A DFN5X6
|
Paket: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 70A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 19.7 nC @ 10 V | 1278 pF @ 25 V | ±20V | - | 2W (Ta), 72.3W (Tc) | 8.5mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DFN5x6 (PR-PAK) | 8-PowerTDFN |
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EPC Space, LLC |
GAN FET HEMT 200V 80A 5UB
|
Paket: - |
Request a Quote |
|
GaNFET (Gallium Nitride) | 200 V | 80A (Tc) | 5V | 2.5V @ 7mA | 13.5 nC @ 100 V | 1313 pF @ 100 V | +6V, -4V | - | - | 14.5mOhm @ 30A, 5V | -55°C ~ 150°C (TJ) | Surface Mount | 5-SMD | 5-SMD, No Lead |
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UMW |
TO-252 N-CHANNEL POWER MOSFET
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Paket: - |
Lager7.407 |
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MOSFET (Metal Oxide) | 600 V | 1A (Tj) | 10V | 4V @ 250µA | 4.8 nC @ 10 V | 150 pF @ 25 V | ±30V | - | - | 11Ohm @ 500mA, 10V | 150°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Infineon Technologies |
SIC_DISCRETE
|
Paket: - |
Request a Quote |
|
SiC (Silicon Carbide Junction Transistor) | 1200 V | 22A (Tc) | 18V, 20V | 5.1V @ 2.2mA | 18 nC @ 20 V | 458 pF @ 800 V | +23V, -5V | - | 133W (Tc) | 150mOhm @ 7A, 20V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-4-14 | TO-247-4 |
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STMicroelectronics |
SICFET N-CH 1200V 20A H2PAK-2
|
Paket: - |
Request a Quote |
|
SiCFET (Silicon Carbide) | 1200 V | 20A (Tc) | 20V | 3.5V @ 1mA | 45 nC @ 20 V | 650 pF @ 400 V | +25V, -10V | - | 175W (Tc) | 290mOhm @ 10A, 20V | -55°C ~ 200°C (TJ) | Surface Mount | H2PAK-2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Nexperia USA Inc. |
MOSFET N-CH 30V 6A TO236AB
|
Paket: - |
Lager9.981 |
|
MOSFET (Metal Oxide) | 30 V | 6A (Ta) | 1.8V, 4.5V | 900mV @ 250µA | 18.6 nC @ 4.5 V | 1150 pF @ 15 V | ±8V | - | 610mW (Ta), 8.3W (Tc) | 24mOhm @ 6A, 4.5V | -55°C ~ 175°C (TJ) | Surface Mount | TO-236AB | TO-236-3, SC-59, SOT-23-3 |