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IPS031N03L G

Infineon Technologies

MOSFET N-CH 30V 90A TO251-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO251-3
Package / Case: TO-251-3 Stub Leads, IPak

Paket: TO-251-3 Stub Leads, IPak

Lager36.012

MOSFET (Metal Oxide)

30V

90A (Tc)

4.5V, 10V

2.2V @ 250µA

51nC @ 10V

5300pF @ 15V

±20V

-

94W (Tc)

3.1 mOhm @ 30A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO251-3

TO-251-3 Stub Leads, IPak

SPD30N06S2L-13

Infineon Technologies

MOSFET N-CH 55V 30A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 80µA
Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 13 mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: P-TO252-3
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paket: TO-252-3, DPak (2 Leads + Tab), SC-63

Lager377.688

MOSFET (Metal Oxide)

55V

30A (Tc)

4.5V, 10V

2V @ 80µA

69nC @ 10V

2300pF @ 25V

±20V

-

136W (Tc)

13 mOhm @ 30A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

P-TO252-3

TO-252-3, DPak (2 Leads + Tab), SC-63

AOB2906

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 100V TO-263

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2Pak)
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Lager4.416

-

Surface Mount

TO-263 (D2Pak)

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TPCC8065-H,LQ(S

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 13A 8TSON-ADV

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 700mW (Ta), 18W (Tc)
Rds On (Max) @ Id, Vgs: 11.4 mOhm @ 6.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Package / Case: 8-PowerVDFN

Paket: 8-PowerVDFN

Lager273.600

MOSFET (Metal Oxide)

30V

13A (Ta)

4.5V, 10V

2.3V @ 200µA

20nC @ 10V

1350pF @ 10V

±20V

-

700mW (Ta), 18W (Tc)

11.4 mOhm @ 6.5A, 10V

150°C (TJ)

Surface Mount

8-TSON Advance (3.3x3.3)

8-PowerVDFN

MCH6331-TL-E

ON Semiconductor

MOSFET P-CH 30V 3.5A MCPH6

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 98 mOhm @ 1.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-MCPH
Package / Case: 6-SMD, Flat Leads

Paket: 6-SMD, Flat Leads

Lager3.536

MOSFET (Metal Oxide)

30V

3.5A (Ta)

4V, 10V

-

5nC @ 10V

250pF @ 10V

±20V

-

1.5W (Ta)

98 mOhm @ 1.5A, 10V

150°C (TJ)

Surface Mount

6-MCPH

6-SMD, Flat Leads

NTTFS4943NTWG

ON Semiconductor

MOSFET N-CH 30V 8A 8WDFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 41A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1386pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 840mW (Ta), 22.3W (Tc)
Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-WDFN (3.3x3.3)
Package / Case: 8-PowerWDFN

Paket: 8-PowerWDFN

Lager5.296

MOSFET (Metal Oxide)

30V

8A (Ta), 41A (Tc)

4.5V, 10V

2.2V @ 250µA

20.4nC @ 10V

1386pF @ 15V

±20V

-

840mW (Ta), 22.3W (Tc)

7.2 mOhm @ 20A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-WDFN (3.3x3.3)

8-PowerWDFN

BS170

ON Semiconductor

MOSFET N-CH 60V 500MA TO-92

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-92-3
Package / Case: TO-226-3, TO-92-3 (TO-226AA)

Paket: TO-226-3, TO-92-3 (TO-226AA)

Lager563.184

MOSFET (Metal Oxide)

60V

500mA (Ta)

10V

3V @ 1mA

-

60pF @ 10V

±20V

-

350mW (Ta)

5 Ohm @ 200mA, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-92-3

TO-226-3, TO-92-3 (TO-226AA)

PH3855L,115

NXP

MOSFET N-CH 55V 24A LFPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 11.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 765pF @ 25V
Vgs (Max): ±15V
FET Feature: -
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 36 mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: LFPAK56, Power-SO8
Package / Case: SC-100, SOT-669

Paket: SC-100, SOT-669

Lager7.168

MOSFET (Metal Oxide)

55V

24A (Tc)

4.5V, 10V

2V @ 1mA

11.7nC @ 5V

765pF @ 25V

±15V

-

50W (Tc)

36 mOhm @ 15A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

LFPAK56, Power-SO8

SC-100, SOT-669

FQPF3P50

Fairchild/ON Semiconductor

MOSFET P-CH 500V 1.9A TO-220F

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 39W (Tc)
Rds On (Max) @ Id, Vgs: 4.9 Ohm @ 950mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220F
Package / Case: TO-220-3 Full Pack

Paket: TO-220-3 Full Pack

Lager4.352

MOSFET (Metal Oxide)

500V

1.9A (Tc)

10V

5V @ 250µA

23nC @ 10V

660pF @ 25V

±30V

-

39W (Tc)

4.9 Ohm @ 950mA, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220F

TO-220-3 Full Pack

ZVN4306ASTOB

Diodes Incorporated

MOSFET N-CH 60V 1.1A TO92-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 850mW (Ta)
Rds On (Max) @ Id, Vgs: 330 mOhm @ 3A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: E-Line (TO-92 compatible)
Package / Case: E-Line-3

Paket: E-Line-3

Lager6.864

MOSFET (Metal Oxide)

60V

1.1A (Ta)

5V, 10V

3V @ 1mA

-

350pF @ 25V

±20V

-

850mW (Ta)

330 mOhm @ 3A, 10V

-55°C ~ 150°C (TJ)

Through Hole

E-Line (TO-92 compatible)

E-Line-3

AUIRF7478QTR

Infineon Technologies

MOSFET N-CH 60V 7A 8SOIC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1740pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 26 mOhm @ 4.2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

Paket: 8-SOIC (0.154", 3.90mm Width)

Lager48.000

MOSFET (Metal Oxide)

60V

7A (Ta)

4.5V, 10V

3V @ 250µA

31nC @ 4.5V

1740pF @ 25V

±20V

-

2.5W (Ta)

26 mOhm @ 4.2A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-SO

8-SOIC (0.154", 3.90mm Width)

DKI10751

Sanken

MOSFET N-CH 100V 15A TO-252

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 32W (Tc)
Rds On (Max) @ Id, Vgs: 70.4 mOhm @ 7.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paket: TO-252-3, DPak (2 Leads + Tab), SC-63

Lager4.928

MOSFET (Metal Oxide)

100V

15A (Tc)

4.5V, 10V

2.5V @ 250µA

15.8nC @ 10V

1050pF @ 25V

±20V

-

32W (Tc)

70.4 mOhm @ 7.5A, 10V

150°C (TJ)

Surface Mount

TO-252

TO-252-3, DPak (2 Leads + Tab), SC-63

RSJ151P10TL

Rohm Semiconductor

MOSFET P-CH 100V 15A SC83

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.35W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 120 mOhm @ 15A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: LPTS (SC-83)
Package / Case: SC-83

Paket: SC-83

Lager5.744

MOSFET (Metal Oxide)

100V

15A (Tc)

4V, 10V

2.5V @ 1mA

64nC @ 10V

3800pF @ 25V

±20V

-

1.35W (Ta), 50W (Tc)

120 mOhm @ 15A, 10V

150°C (TJ)

Surface Mount

LPTS (SC-83)

SC-83

AON6407

Alpha & Omega Semiconductor Inc.

MOSFET P-CH 30V 32A 8DFN

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3505pF @ 15V
Vgs (Max): ±25V
FET Feature: -
Power Dissipation (Max): 7.3W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-DFN (5x6)
Package / Case: 8-PowerSMD, Flat Leads

Paket: 8-PowerSMD, Flat Leads

Lager93.426

MOSFET (Metal Oxide)

30V

32A (Ta), 85A (Tc)

6V, 10V

2.6V @ 250µA

105nC @ 10V

3505pF @ 15V

±25V

-

7.3W (Ta), 83W (Tc)

4.5 mOhm @ 20A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-DFN (5x6)

8-PowerSMD, Flat Leads

AOTF10N60CL

Alpha & Omega Semiconductor Inc.

N

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 10A (Tj)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220F
Package / Case: TO-220-3 Full Pack

Paket: -

Request a Quote

MOSFET (Metal Oxide)

600 V

10A (Tj)

10V

4.5V @ 250µA

40 nC @ 10 V

1600 pF @ 25 V

±30V

-

50W (Tc)

750mOhm @ 5A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220F

TO-220-3 Full Pack

DMG3415UQ-7

Diodes Incorporated

MOSFET BVDSS: 8V~24V SOT23 T&R 3

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 294 pF @ 10 V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 900mW (Ta)
Rds On (Max) @ Id, Vgs: 42.5mOhm @ 4A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3

Paket: -

Lager9.288

MOSFET (Metal Oxide)

20 V

4A (Ta)

1.8V, 4.5V

1V @ 250µA

9.1 nC @ 4.5 V

294 pF @ 10 V

±8V

-

900mW (Ta)

42.5mOhm @ 4A, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-3

TO-236-3, SC-59, SOT-23-3

2SK3481-0-Z-E1-AZ

Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

Paket: -

Request a Quote

-

PJA3440-AU_R1_000A1

Panjit International Inc.

SOT-23, MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 4.3A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3

Paket: -

Lager19.800

MOSFET (Metal Oxide)

40 V

4.3A (Ta)

4.5V, 10V

2.5V @ 250µA

4.8 nC @ 4.5 V

410 pF @ 20 V

±20V

-

1.25W (Ta)

42mOhm @ 4.3A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23

TO-236-3, SC-59, SOT-23-3

SI1401EDH-T1-BE3

Vishay Siliconix

MOSFET P-CH 12V 4A/4A SC70-6

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12 V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±10V
FET Feature: -
Power Dissipation (Max): 1.6W (Ta), 2.8W (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.5A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-70-6
Package / Case: 6-TSSOP, SC-88, SOT-363

Paket: -

Lager7.500

MOSFET (Metal Oxide)

12 V

4A (Ta), 4A (Tc)

-

1V @ 250µA

36 nC @ 8 V

-

±10V

-

1.6W (Ta), 2.8W (Tc)

34mOhm @ 5.5A, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

SC-70-6

6-TSSOP, SC-88, SOT-363

IPL60R185CFD7AUMA1

Infineon Technologies

MOSFET N-CH 600V 14A 4VSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1199 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 85W (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 6A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-VSON-4
Package / Case: 4-PowerTSFN

Paket: -

Lager8.919

MOSFET (Metal Oxide)

600 V

14A (Tc)

10V

4.5V @ 300µA

28 nC @ 10 V

1199 pF @ 400 V

±20V

-

85W (Tc)

185mOhm @ 6A, 10V

-40°C ~ 150°C (TJ)

Surface Mount

PG-VSON-4

4-PowerTSFN

CPH5805-TL-E

onsemi

NCH+SBD 4V DRIVE SERIES

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

Paket: -

Request a Quote

-

GSFP0446

Good-Ark Semiconductor

MOSFET, N-CH, SINGLE, 45A, 40V,

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-PPAK (3.1x3.05)
Package / Case: 8-PowerVDFN

Paket: -

Lager17.928

MOSFET (Metal Oxide)

40 V

45A (Tc)

4.5V, 10V

2.5V @ 250µA

20 nC @ 10 V

1400 pF @ 20 V

±20V

-

33W (Tc)

7.2mOhm @ 8A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-PPAK (3.1x3.05)

8-PowerVDFN

DI050P02PT

Diotec Semiconductor

IC

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4596 pF @ 10 V
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 35.7W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-QFN (3x3)
Package / Case: 8-PowerVDFN

Paket: -

Request a Quote

MOSFET (Metal Oxide)

20 V

50A (Tc)

4.5V, 10V

1V @ 250µA

102 nC @ 10 V

4596 pF @ 10 V

±12V

-

35.7W (Tc)

10mOhm @ 15A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-QFN (3x3)

8-PowerVDFN

FCI25N60N-F102

onsemi

MOSFET N-CH 600V 25A I2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3352 pF @ 100 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 216W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-262 (I2PAK)
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA

Paket: -

Request a Quote

MOSFET (Metal Oxide)

600 V

25A (Tc)

10V

4V @ 250µA

74 nC @ 10 V

3352 pF @ 100 V

±30V

-

216W (Tc)

125mOhm @ 12.5A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-262 (I2PAK)

TO-262-3 Long Leads, I2PAK, TO-262AA

NVB150N65S3F

onsemi

MOSFET N-CH 650V 24A D2PAK-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 540µA
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1999 pF @ 400 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 192W
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2PAK)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Paket: -

Lager2.169

MOSFET (Metal Oxide)

650 V

24A (Tc)

10V

5V @ 540µA

43 nC @ 10 V

1999 pF @ 400 V

±30V

-

192W

150mOhm @ 12A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-263 (D2PAK)

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

NVH4L040N65S3F

onsemi

MOSFET N-CH 650V 65A TO247-4

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 5V @ 2.1mA
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5665 pF @ 400 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 446W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 32.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-4L
Package / Case: TO-247-4

Paket: -

Lager1.344

MOSFET (Metal Oxide)

650 V

65A (Tc)

-

5V @ 2.1mA

160 nC @ 10 V

5665 pF @ 400 V

±30V

-

446W (Tc)

40mOhm @ 32.5A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-247-4L

TO-247-4

UPA2790GR-E2-A

Renesas Electronics Corporation

P-CHANNEL POWER MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

Paket: -

Request a Quote

-

CPH6614-TL-E

onsemi

P-CHANNEL SILICON MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

Paket: -

Request a Quote

-

DMNH6021SPSW-13

Diodes Incorporated

MOSFET BVDSS: 41V~60V POWERDI506

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1132 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.6W
Rds On (Max) @ Id, Vgs: 23mOhm @ 12A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Supplier Device Package: PowerDI5060-8 (Type UX)
Package / Case: 8-PowerTDFN

Paket: -

Request a Quote

MOSFET (Metal Oxide)

60 V

44A (Tc)

4.5V, 10V

3V @ 250µA

20.1 nC @ 10 V

1132 pF @ 30 V

±20V

-

1.6W

23mOhm @ 12A, 10V

-55°C ~ 175°C (TJ)

Surface Mount, Wettable Flank

PowerDI5060-8 (Type UX)

8-PowerTDFN

NTR3A052PZT1G-ML

MOSLEADER

P-Channel -20V 3.6A SOT-23-3

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

Paket: -

Request a Quote

-

Teilenummer	Hersteller	Beschreibung	Paket	Lager	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPS031N03L G	Infineon Technologies	MOSFET N-CH 30V 90A TO251-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 94W (Tc) Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Stub Leads, IPak	Paket: TO-251-3 Stub Leads, IPak	Lager36.012	MOSFET (Metal Oxide)	30V	90A (Tc)	4.5V, 10V	2.2V @ 250µA	51nC @ 10V	5300pF @ 15V	±20V	-	94W (Tc)	3.1 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO251-3	TO-251-3 Stub Leads, IPak
SPD30N06S2L-13	Infineon Technologies	MOSFET N-CH 55V 30A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 80µA Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: P-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Paket: TO-252-3, DPak (2 Leads + Tab), SC-63	Lager377.688	MOSFET (Metal Oxide)	55V	30A (Tc)	4.5V, 10V	2V @ 80µA	69nC @ 10V	2300pF @ 25V	±20V	-	136W (Tc)	13 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	P-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
AOB2906	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 100V TO-263 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Lager4.416	-	-	-	-	-	-	-	-	-	-	-	-	Surface Mount	TO-263 (D2Pak)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TPCC8065-H,LQ(S	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 13A 8TSON-ADV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta), 18W (Tc) Rds On (Max) @ Id, Vgs: 11.4 mOhm @ 6.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance (3.3x3.3) Package / Case: 8-PowerVDFN	Paket: 8-PowerVDFN	Lager273.600	MOSFET (Metal Oxide)	30V	13A (Ta)	4.5V, 10V	2.3V @ 200µA	20nC @ 10V	1350pF @ 10V	±20V	-	700mW (Ta), 18W (Tc)	11.4 mOhm @ 6.5A, 10V	150°C (TJ)	Surface Mount	8-TSON Advance (3.3x3.3)	8-PowerVDFN
MCH6331-TL-E	ON Semiconductor	MOSFET P-CH 30V 3.5A MCPH6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 98 mOhm @ 1.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-MCPH Package / Case: 6-SMD, Flat Leads	Paket: 6-SMD, Flat Leads	Lager3.536	MOSFET (Metal Oxide)	30V	3.5A (Ta)	4V, 10V	-	5nC @ 10V	250pF @ 10V	±20V	-	1.5W (Ta)	98 mOhm @ 1.5A, 10V	150°C (TJ)	Surface Mount	6-MCPH	6-SMD, Flat Leads
NTTFS4943NTWG	ON Semiconductor	MOSFET N-CH 30V 8A 8WDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 41A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1386pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 840mW (Ta), 22.3W (Tc) Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Paket: 8-PowerWDFN	Lager5.296	MOSFET (Metal Oxide)	30V	8A (Ta), 41A (Tc)	4.5V, 10V	2.2V @ 250µA	20.4nC @ 10V	1386pF @ 15V	±20V	-	840mW (Ta), 22.3W (Tc)	7.2 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
BS170	ON Semiconductor	MOSFET N-CH 60V 500MA TO-92 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Paket: TO-226-3, TO-92-3 (TO-226AA)	Lager563.184	MOSFET (Metal Oxide)	60V	500mA (Ta)	10V	3V @ 1mA	-	60pF @ 10V	±20V	-	350mW (Ta)	5 Ohm @ 200mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
PH3855L,115	NXP	MOSFET N-CH 55V 24A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 765pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 36 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Paket: SC-100, SOT-669	Lager7.168	MOSFET (Metal Oxide)	55V	24A (Tc)	4.5V, 10V	2V @ 1mA	11.7nC @ 5V	765pF @ 25V	±15V	-	50W (Tc)	36 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
FQPF3P50	Fairchild/ON Semiconductor	MOSFET P-CH 500V 1.9A TO-220F FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 39W (Tc) Rds On (Max) @ Id, Vgs: 4.9 Ohm @ 950mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Paket: TO-220-3 Full Pack	Lager4.352	MOSFET (Metal Oxide)	500V	1.9A (Tc)	10V	5V @ 250µA	23nC @ 10V	660pF @ 25V	±30V	-	39W (Tc)	4.9 Ohm @ 950mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
ZVN4306ASTOB	Diodes Incorporated	MOSFET N-CH 60V 1.1A TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 850mW (Ta) Rds On (Max) @ Id, Vgs: 330 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	Paket: E-Line-3	Lager6.864	MOSFET (Metal Oxide)	60V	1.1A (Ta)	5V, 10V	3V @ 1mA	-	350pF @ 25V	±20V	-	850mW (Ta)	330 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	E-Line (TO-92 compatible)	E-Line-3
AUIRF7478QTR	Infineon Technologies	MOSFET N-CH 60V 7A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1740pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 26 mOhm @ 4.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Paket: 8-SOIC (0.154", 3.90mm Width)	Lager48.000	MOSFET (Metal Oxide)	60V	7A (Ta)	4.5V, 10V	3V @ 250µA	31nC @ 4.5V	1740pF @ 25V	±20V	-	2.5W (Ta)	26 mOhm @ 4.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
DKI10751	Sanken	MOSFET N-CH 100V 15A TO-252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 32W (Tc) Rds On (Max) @ Id, Vgs: 70.4 mOhm @ 7.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Paket: TO-252-3, DPak (2 Leads + Tab), SC-63	Lager4.928	MOSFET (Metal Oxide)	100V	15A (Tc)	4.5V, 10V	2.5V @ 250µA	15.8nC @ 10V	1050pF @ 25V	±20V	-	32W (Tc)	70.4 mOhm @ 7.5A, 10V	150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPak (2 Leads + Tab), SC-63
RSJ151P10TL	Rohm Semiconductor	MOSFET P-CH 100V 15A SC83 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.35W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 120 mOhm @ 15A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS (SC-83) Package / Case: SC-83	Paket: SC-83	Lager5.744	MOSFET (Metal Oxide)	100V	15A (Tc)	4V, 10V	2.5V @ 1mA	64nC @ 10V	3800pF @ 25V	±20V	-	1.35W (Ta), 50W (Tc)	120 mOhm @ 15A, 10V	150°C (TJ)	Surface Mount	LPTS (SC-83)	SC-83
AON6407	Alpha & Omega Semiconductor Inc.	MOSFET P-CH 30V 32A 8DFN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3505pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 7.3W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerSMD, Flat Leads	Paket: 8-PowerSMD, Flat Leads	Lager93.426	MOSFET (Metal Oxide)	30V	32A (Ta), 85A (Tc)	6V, 10V	2.6V @ 250µA	105nC @ 10V	3505pF @ 15V	±25V	-	7.3W (Ta), 83W (Tc)	4.5 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (5x6)	8-PowerSMD, Flat Leads
AOTF10N60CL	Alpha & Omega Semiconductor Inc.	N FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 10A (Tj) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Paket: -	Request a Quote	MOSFET (Metal Oxide)	600 V	10A (Tj)	10V	4.5V @ 250µA	40 nC @ 10 V	1600 pF @ 25 V	±30V	-	50W (Tc)	750mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
DMG3415UQ-7	Diodes Incorporated	MOSFET BVDSS: 8V~24V SOT23 T&R 3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 294 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 900mW (Ta) Rds On (Max) @ Id, Vgs: 42.5mOhm @ 4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Paket: -	Lager9.288	MOSFET (Metal Oxide)	20 V	4A (Ta)	1.8V, 4.5V	1V @ 250µA	9.1 nC @ 4.5 V	294 pF @ 10 V	±8V	-	900mW (Ta)	42.5mOhm @ 4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
2SK3481-0-Z-E1-AZ	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
PJA3440-AU_R1_000A1	Panjit International Inc.	SOT-23, MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 4.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Paket: -	Lager19.800	MOSFET (Metal Oxide)	40 V	4.3A (Ta)	4.5V, 10V	2.5V @ 250µA	4.8 nC @ 4.5 V	410 pF @ 20 V	±20V	-	1.25W (Ta)	42mOhm @ 4.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
SI1401EDH-T1-BE3	Vishay Siliconix	MOSFET P-CH 12V 4A/4A SC70-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12 V Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 1.6W (Ta), 2.8W (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 5.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-6 Package / Case: 6-TSSOP, SC-88, SOT-363	Paket: -	Lager7.500	MOSFET (Metal Oxide)	12 V	4A (Ta), 4A (Tc)	-	1V @ 250µA	36 nC @ 8 V	-	±10V	-	1.6W (Ta), 2.8W (Tc)	34mOhm @ 5.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-70-6	6-TSSOP, SC-88, SOT-363
IPL60R185CFD7AUMA1	Infineon Technologies	MOSFET N-CH 600V 14A 4VSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 300µA Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1199 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 6A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-VSON-4 Package / Case: 4-PowerTSFN	Paket: -	Lager8.919	MOSFET (Metal Oxide)	600 V	14A (Tc)	10V	4.5V @ 300µA	28 nC @ 10 V	1199 pF @ 400 V	±20V	-	85W (Tc)	185mOhm @ 6A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-VSON-4	4-PowerTSFN
CPH5805-TL-E	onsemi	NCH+SBD 4V DRIVE SERIES FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
GSFP0446	Good-Ark Semiconductor	MOSFET, N-CH, SINGLE, 45A, 40V, FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 33W (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PPAK (3.1x3.05) Package / Case: 8-PowerVDFN	Paket: -	Lager17.928	MOSFET (Metal Oxide)	40 V	45A (Tc)	4.5V, 10V	2.5V @ 250µA	20 nC @ 10 V	1400 pF @ 20 V	±20V	-	33W (Tc)	7.2mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PPAK (3.1x3.05)	8-PowerVDFN
DI050P02PT	Diotec Semiconductor	IC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4596 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 35.7W (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-QFN (3x3) Package / Case: 8-PowerVDFN	Paket: -	Request a Quote	MOSFET (Metal Oxide)	20 V	50A (Tc)	4.5V, 10V	1V @ 250µA	102 nC @ 10 V	4596 pF @ 10 V	±12V	-	35.7W (Tc)	10mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-QFN (3x3)	8-PowerVDFN
FCI25N60N-F102	onsemi	MOSFET N-CH 600V 25A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3352 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 216W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 12.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 (I2PAK) Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA	Paket: -	Request a Quote	MOSFET (Metal Oxide)	600 V	25A (Tc)	10V	4V @ 250µA	74 nC @ 10 V	3352 pF @ 100 V	±30V	-	216W (Tc)	125mOhm @ 12.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-262 (I2PAK)	TO-262-3 Long Leads, I2PAK, TO-262AA
NVB150N65S3F	onsemi	MOSFET N-CH 650V 24A D2PAK-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 540µA Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1999 pF @ 400 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 192W Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Paket: -	Lager2.169	MOSFET (Metal Oxide)	650 V	24A (Tc)	10V	5V @ 540µA	43 nC @ 10 V	1999 pF @ 400 V	±30V	-	192W	150mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
NVH4L040N65S3F	onsemi	MOSFET N-CH 650V 65A TO247-4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 2.1mA Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5665 pF @ 400 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 446W (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 32.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4L Package / Case: TO-247-4	Paket: -	Lager1.344	MOSFET (Metal Oxide)	650 V	65A (Tc)	-	5V @ 2.1mA	160 nC @ 10 V	5665 pF @ 400 V	±30V	-	446W (Tc)	40mOhm @ 32.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-4L	TO-247-4
UPA2790GR-E2-A	Renesas Electronics Corporation	P-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
CPH6614-TL-E	onsemi	P-CHANNEL SILICON MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DMNH6021SPSW-13	Diodes Incorporated	MOSFET BVDSS: 41V~60V POWERDI506 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1132 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W Rds On (Max) @ Id, Vgs: 23mOhm @ 12A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PowerDI5060-8 (Type UX) Package / Case: 8-PowerTDFN	Paket: -	Request a Quote	MOSFET (Metal Oxide)	60 V	44A (Tc)	4.5V, 10V	3V @ 250µA	20.1 nC @ 10 V	1132 pF @ 30 V	±20V	-	1.6W	23mOhm @ 12A, 10V	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	PowerDI5060-8 (Type UX)	8-PowerTDFN
NTR3A052PZT1G-ML	MOSLEADER	P-Channel -20V 3.6A SOT-23-3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-