Page 425 - Transistoren - FETs, MOSFET - Einzeln | Diskrete Halbleiterprodukte

IRF7477TR

Infineon Technologies

MOSFET N-CH 30V 14A 8-SOIC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2710pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 14A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

Paket: 8-SOIC (0.154", 3.90mm Width)

Lager3.568

MOSFET (Metal Oxide)

30V

14A (Ta)

4.5V, 10V

2.5V @ 250µA

38nC @ 4.5V

2710pF @ 15V

±20V

-

2.5W (Ta)

8.5 mOhm @ 14A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-SO

8-SOIC (0.154", 3.90mm Width)

AOY516

Alpha & Omega Semiconductor Inc.

MOSFET N-CH TO251B

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1333pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-251B
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

Paket: TO-251-3 Short Leads, IPak, TO-251AA

Lager4.112

MOSFET (Metal Oxide)

30V

46A (Tc)

4.5V, 10V

2.6V @ 250µA

33nC @ 10V

1333pF @ 15V

±20V

-

2.5W (Ta), 50W (Tc)

5 mOhm @ 20A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-251B

TO-251-3 Short Leads, IPak, TO-251AA

NTLUS3A18PZCTAG

ON Semiconductor

MOSFET P-CH 20V 8.2A UDFN

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2240pF @ 15V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 18 mOhm @ 7A, 4.5V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: 6-UDFN (2x2)
Package / Case: 6-UDFN Exposed Pad

Paket: 6-UDFN Exposed Pad

Lager3.856

MOSFET (Metal Oxide)

20V

5.1A (Ta)

1.5V, 4.5V

1V @ 250µA

28nC @ 4.5V

2240pF @ 15V

±8V

-

18 mOhm @ 7A, 4.5V

-

Surface Mount

6-UDFN (2x2)

6-UDFN Exposed Pad

ATP214-TL-H

ON Semiconductor

MOSFET N-CH 60V 75A ATPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 75A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4850pF @ 20V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 8.1 mOhm @ 38A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: ATPAK
Package / Case: ATPAK (2 leads+tab)

Paket: ATPAK (2 leads+tab)

Lager6.624

MOSFET (Metal Oxide)

60V

75A (Ta)

4V, 10V

-

96nC @ 10V

4850pF @ 20V

±20V

-

60W (Tc)

8.1 mOhm @ 38A, 10V

150°C (TJ)

Surface Mount

ATPAK

ATPAK (2 leads+tab)

AOT8N60

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 8A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 900 mOhm @ 4A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3

Paket: TO-220-3

Lager36.612

MOSFET (Metal Oxide)

600V

8A (Tc)

10V

4.5V @ 250µA

35nC @ 10V

1370pF @ 25V

±30V

-

208W (Tc)

900 mOhm @ 4A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220

TO-220-3

IRFI730G

Vishay Siliconix

MOSFET N-CH 400V 3.7A TO220FP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 400V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 1 Ohm @ 2.1A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Package / Case: TO-220-3 Full Pack, Isolated Tab

Paket: TO-220-3 Full Pack, Isolated Tab

Lager259.536

MOSFET (Metal Oxide)

400V

3.7A (Tc)

10V

4V @ 250µA

38nC @ 10V

700pF @ 25V

±20V

-

35W (Tc)

1 Ohm @ 2.1A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220-3 Full Pack, Isolated Tab

BUK95180-100A,127

NXP

MOSFET N-CH 100V 11A TO220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 619pF @ 25V
Vgs (Max): ±15V
FET Feature: -
Power Dissipation (Max): 54W (Tc)
Rds On (Max) @ Id, Vgs: 173 mOhm @ 5A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

Paket: TO-220-3

Lager7.200

MOSFET (Metal Oxide)

100V

11A (Tc)

4.5V, 10V

2V @ 1mA

-

619pF @ 25V

±15V

-

54W (Tc)

173 mOhm @ 5A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220AB

TO-220-3

STP6N52K3

STMicroelectronics

MOSFET N-CH 525V 5A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 525V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 50V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3

Paket: TO-220-3

Lager3.456

MOSFET (Metal Oxide)

525V

5A (Tc)

10V

4.5V @ 50µA

26nC @ 10V

670pF @ 50V

±30V

-

70W (Tc)

1.2 Ohm @ 2.5A, 10V

150°C (TJ)

Through Hole

TO-220

TO-220-3

DMN62D0LFD-7

Diodes Incorporated

MOSFET N-CH 60V 0.31A 3-DFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 500nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 31pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 480mW (Ta)
Rds On (Max) @ Id, Vgs: 2 Ohm @ 100mA, 4V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: X1-DFN1212-3
Package / Case: 3-UDFN

Paket: 3-UDFN

Lager4.368

MOSFET (Metal Oxide)

60V

310mA (Ta)

1.8V, 4V

1V @ 250µA

500nC @ 4.5V

31pF @ 25V

±20V

-

480mW (Ta)

2 Ohm @ 100mA, 4V

-55°C ~ 150°C (TJ)

Surface Mount

X1-DFN1212-3

3-UDFN

IXFN56N90P

IXYS

MOSFET N-CH 900V 56A SOT-227B

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 56A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 6.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 375nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 1000W (Tc)
Rds On (Max) @ Id, Vgs: 135 mOhm @ 28A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC

Paket: SOT-227-4, miniBLOC

Lager78.384

MOSFET (Metal Oxide)

900V

56A

10V

6.5V @ 3mA

375nC @ 10V

23000pF @ 25V

±30V

-

1000W (Tc)

135 mOhm @ 28A, 10V

-55°C ~ 150°C (TJ)

Chassis Mount

SOT-227B

SOT-227-4, miniBLOC

IPD65R250E6XTMA1

Infineon Technologies

MOSFET N-CH TO252-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 16.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 400µA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 1000V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 250 mOhm @ 4.4A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paket: TO-252-3, DPak (2 Leads + Tab), SC-63

Lager4.864

MOSFET (Metal Oxide)

650V

16.1A (Tc)

10V

3.5V @ 400µA

45nC @ 10V

950pF @ 1000V

±20V

-

208W (Tc)

250 mOhm @ 4.4A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO252-3

TO-252-3, DPak (2 Leads + Tab), SC-63

PMXB43UNE

Nexperia USA Inc.

MOSFET N-CH 20V 3.2A 3DFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 551pF @ 10V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 400mW (Ta), 8.33W (Tc)
Rds On (Max) @ Id, Vgs: 54 mOhm @ 3.2A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DFN1010D-3
Package / Case: 3-XDFN Exposed Pad

Paket: 3-XDFN Exposed Pad

Lager3.200

MOSFET (Metal Oxide)

20V

3.2A (Ta)

1.5V, 4.5V

900mV @ 250µA

10nC @ 4.5V

551pF @ 10V

±8V

-

400mW (Ta), 8.33W (Tc)

54 mOhm @ 3.2A, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

DFN1010D-3

3-XDFN Exposed Pad

BSZ42DN25NS3 G

Infineon Technologies

MOSFET N-CH 250V 5A TSDSON-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 13µA
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 33.8W (Tc)
Rds On (Max) @ Id, Vgs: 425 mOhm @ 2.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSDSON-8
Package / Case: 8-PowerTDFN

Paket: 8-PowerTDFN

Lager51.054

MOSFET (Metal Oxide)

250V

5A (Tc)

10V

4V @ 13µA

5.5nC @ 10V

430pF @ 100V

±20V

-

33.8W (Tc)

425 mOhm @ 2.5A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TSDSON-8

8-PowerTDFN

NDF0610

onsemi

MOSFET P-CH 60V 180MA TO92-3

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 1.43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: TO-92-3
Package / Case: TO-226-3, TO-92-3 (TO-226AA)

Paket: -

Request a Quote

MOSFET (Metal Oxide)

60 V

180mA (Ta)

-

3.5V @ 1mA

1.43 nC @ 10 V

60 pF @ 25 V

-

10Ohm @ 500mA, 10V

-

Through Hole

TO-92-3

TO-226-3, TO-92-3 (TO-226AA)

APT6025BLLG

Microchip Technology

MOSFET N-CH 600V 24A TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 250mOhm @ 12A, 10V
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: TO-247 [B]
Package / Case: TO-247-3

Paket: -

Request a Quote

MOSFET (Metal Oxide)

600 V

24A (Tc)

-

5V @ 1mA

65 nC @ 10 V

2910 pF @ 25 V

-

250mOhm @ 12A, 10V

-

Through Hole

TO-247 [B]

TO-247-3

BSH103BKR

Nexperia USA Inc.

BSH103BK - 30 V, N-CHANNEL TRENC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 79.3 pF @ 15 V
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 330mW (Ta), 2.1W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 1A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-236AB
Package / Case: TO-236-3, SC-59, SOT-23-3

Paket: -

Lager61.914

MOSFET (Metal Oxide)

30 V

1A (Ta)

1.8V, 4.5V

1.25V @ 250µA

1.2 nC @ 4.5 V

79.3 pF @ 15 V

±12V

-

330mW (Ta), 2.1W (Tc)

270mOhm @ 1A, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

TO-236AB

TO-236-3, SC-59, SOT-23-3

UJ4C075060L8SSR

Qorvo

750V/60MO,SICFET,G4,TOLL

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

Paket: -

Request a Quote

-

PJA3449-AU_R1_000A1

Panjit International Inc.

SOT-23, MOSFET

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 299 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 2.2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3

Paket: -

Lager80.910

MOSFET (Metal Oxide)

40 V

2.2A (Ta)

4.5V, 10V

2.1V @ 250µA

7.3 nC @ 10 V

299 pF @ 20 V

±20V

-

1.25W (Ta)

160mOhm @ 2.2A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23

TO-236-3, SC-59, SOT-23-3

ECH8607-TL-E

Sanyo

N-CHANNEL SILICON MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

Paket: -

Request a Quote

-

IRFH7440TR2PBF

Infineon Technologies

MOSFET N-CH 40V 85A 8PQFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4574 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: 8-PQFN (5x6)
Package / Case: 8-PowerTDFN

Paket: -

Request a Quote

MOSFET (Metal Oxide)

40 V

85A (Tc)

-

3.9V @ 100µA

138 nC @ 10 V

4574 pF @ 25 V

-

2.4mOhm @ 50A, 10V

-

Surface Mount

8-PQFN (5x6)

8-PowerTDFN

DMP4016SPSWQ-13

Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI506

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.9W (Ta), 119W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 9.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Supplier Device Package: PowerDI5060-8 (Type UX)
Package / Case: 8-PowerTDFN

Paket: -

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MOSFET (Metal Oxide)

40 V

86A (Tc)

4.5V, 10V

2.5V @ 250µA

112 nC @ 10 V

5697 pF @ 20 V

±20V

-

3.9W (Ta), 119W (Tc)

10mOhm @ 9.8A, 10V

-55°C ~ 150°C (TJ)

Surface Mount, Wettable Flank

PowerDI5060-8 (Type UX)

8-PowerTDFN

FQB7N60TM-WS

Fairchild Semiconductor

FQB7N60 - MOSFET N-CHANNEL SINGL

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 3.13W (Ta), 142W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.7A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2PAK)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Paket: -

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MOSFET (Metal Oxide)

600 V

7.4A (Tc)

10V

5V @ 250µA

38 nC @ 10 V

1430 pF @ 25 V

±30V

-

3.13W (Ta), 142W (Tc)

1Ohm @ 3.7A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-263 (D2PAK)

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

SCH1402-TL-E

onsemi

NCH 1.8V DRIVE SERIES

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

Paket: -

Request a Quote

-

DMN2990UFO-7B

Diodes Incorporated

MOSFET N-CH 20V 750MA 3DFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.41 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 15 V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 840mW (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: X2-DFN0604-3
Package / Case: 3-XFDFN

Paket: -

Lager25.089

MOSFET (Metal Oxide)

20 V

750mA (Ta)

1.5V, 4.5V

1V @ 250µA

0.41 nC @ 4.5 V

31 pF @ 15 V

±8V

-

840mW (Ta)

990mOhm @ 100mA, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

X2-DFN0604-3

3-XFDFN

IAUA200N04S5N010ATMA1

Infineon Technologies

MOSFET_(20V 40V)

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs(th) (Max) @ Id: 3.4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7650 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-5-1
Package / Case: 5-PowerSFN

Paket: -

Request a Quote

MOSFET (Metal Oxide)

40 V

200A (Tc)

7V, 10V

3.4V @ 100µA

132 nC @ 10 V

7650 pF @ 25 V

±20V

-

167W (Tc)

1mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-HSOF-5-1

5-PowerSFN

SSF6912

Good-Ark Semiconductor

MOSFET, N-CHANNEL, 60V, 5A, SOT-

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 725 pF @ 15 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2A, 10V
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-6L
Package / Case: SOT-23-6

Paket: -

Lager17.949

MOSFET (Metal Oxide)

60 V

2.9A (Ta)

4.5V, 10V

2.5V @ 250µA

14 nC @ 10 V

725 pF @ 15 V

±20V

-

1W (Ta)

75mOhm @ 2A, 10V

-50°C ~ 150°C (TJ)

Surface Mount

SOT-23-6L

SOT-23-6

SIHD6N65ET5-GE3

Vishay Siliconix

MOSFET N-CH 650V 7A TO252AA

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 78W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

Paket: -

Request a Quote

MOSFET (Metal Oxide)

650 V

7A (Tc)

10V

4V @ 250µA

48 nC @ 10 V

820 pF @ 100 V

±30V

-

78W (Tc)

600mOhm @ 3A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-252AA

TO-252-3, DPAK (2 Leads + Tab), SC-63

AP2P052N-HF-ML

MOSLEADER

Single P -20V -4A SOT-23S

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

Paket: -

Request a Quote

-

Teilenummer	Hersteller	Beschreibung	Paket	Lager	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF7477TR	Infineon Technologies	MOSFET N-CH 30V 14A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2710pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Paket: 8-SOIC (0.154", 3.90mm Width)	Lager3.568	MOSFET (Metal Oxide)	30V	14A (Ta)	4.5V, 10V	2.5V @ 250µA	38nC @ 4.5V	2710pF @ 15V	±20V	-	2.5W (Ta)	8.5 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
AOY516	Alpha & Omega Semiconductor Inc.	MOSFET N-CH TO251B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1333pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251B Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Paket: TO-251-3 Short Leads, IPak, TO-251AA	Lager4.112	MOSFET (Metal Oxide)	30V	46A (Tc)	4.5V, 10V	2.6V @ 250µA	33nC @ 10V	1333pF @ 15V	±20V	-	2.5W (Ta), 50W (Tc)	5 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-251B	TO-251-3 Short Leads, IPak, TO-251AA
NTLUS3A18PZCTAG	ON Semiconductor	MOSFET P-CH 20V 8.2A UDFN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2240pF @ 15V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 18 mOhm @ 7A, 4.5V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 6-UDFN (2x2) Package / Case: 6-UDFN Exposed Pad	Paket: 6-UDFN Exposed Pad	Lager3.856	MOSFET (Metal Oxide)	20V	5.1A (Ta)	1.5V, 4.5V	1V @ 250µA	28nC @ 4.5V	2240pF @ 15V	±8V	-	-	18 mOhm @ 7A, 4.5V	-	Surface Mount	6-UDFN (2x2)	6-UDFN Exposed Pad
ATP214-TL-H	ON Semiconductor	MOSFET N-CH 60V 75A ATPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 75A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4850pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 8.1 mOhm @ 38A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: ATPAK Package / Case: ATPAK (2 leads+tab)	Paket: ATPAK (2 leads+tab)	Lager6.624	MOSFET (Metal Oxide)	60V	75A (Ta)	4V, 10V	-	96nC @ 10V	4850pF @ 20V	±20V	-	60W (Tc)	8.1 mOhm @ 38A, 10V	150°C (TJ)	Surface Mount	ATPAK	ATPAK (2 leads+tab)
AOT8N60	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 8A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 900 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Paket: TO-220-3	Lager36.612	MOSFET (Metal Oxide)	600V	8A (Tc)	10V	4.5V @ 250µA	35nC @ 10V	1370pF @ 25V	±30V	-	208W (Tc)	900 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
IRFI730G	Vishay Siliconix	MOSFET N-CH 400V 3.7A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 1 Ohm @ 2.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Paket: TO-220-3 Full Pack, Isolated Tab	Lager259.536	MOSFET (Metal Oxide)	400V	3.7A (Tc)	10V	4V @ 250µA	38nC @ 10V	700pF @ 25V	±20V	-	35W (Tc)	1 Ohm @ 2.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
BUK95180-100A,127	NXP	MOSFET N-CH 100V 11A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 619pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 54W (Tc) Rds On (Max) @ Id, Vgs: 173 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Paket: TO-220-3	Lager7.200	MOSFET (Metal Oxide)	100V	11A (Tc)	4.5V, 10V	2V @ 1mA	-	619pF @ 25V	±15V	-	54W (Tc)	173 mOhm @ 5A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP6N52K3	STMicroelectronics	MOSFET N-CH 525V 5A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 525V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Paket: TO-220-3	Lager3.456	MOSFET (Metal Oxide)	525V	5A (Tc)	10V	4.5V @ 50µA	26nC @ 10V	670pF @ 50V	±30V	-	70W (Tc)	1.2 Ohm @ 2.5A, 10V	150°C (TJ)	Through Hole	TO-220	TO-220-3
DMN62D0LFD-7	Diodes Incorporated	MOSFET N-CH 60V 0.31A 3-DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 310mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 500nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 31pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 480mW (Ta) Rds On (Max) @ Id, Vgs: 2 Ohm @ 100mA, 4V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: X1-DFN1212-3 Package / Case: 3-UDFN	Paket: 3-UDFN	Lager4.368	MOSFET (Metal Oxide)	60V	310mA (Ta)	1.8V, 4V	1V @ 250µA	500nC @ 4.5V	31pF @ 25V	±20V	-	480mW (Ta)	2 Ohm @ 100mA, 4V	-55°C ~ 150°C (TJ)	Surface Mount	X1-DFN1212-3	3-UDFN
IXFN56N90P	IXYS	MOSFET N-CH 900V 56A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 56A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 375nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1000W (Tc) Rds On (Max) @ Id, Vgs: 135 mOhm @ 28A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Paket: SOT-227-4, miniBLOC	Lager78.384	MOSFET (Metal Oxide)	900V	56A	10V	6.5V @ 3mA	375nC @ 10V	23000pF @ 25V	±30V	-	1000W (Tc)	135 mOhm @ 28A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IPD65R250E6XTMA1	Infineon Technologies	MOSFET N-CH TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 16.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 400µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 1000V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 250 mOhm @ 4.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Paket: TO-252-3, DPak (2 Leads + Tab), SC-63	Lager4.864	MOSFET (Metal Oxide)	650V	16.1A (Tc)	10V	3.5V @ 400µA	45nC @ 10V	950pF @ 1000V	±20V	-	208W (Tc)	250 mOhm @ 4.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
PMXB43UNE	Nexperia USA Inc.	MOSFET N-CH 20V 3.2A 3DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 551pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 400mW (Ta), 8.33W (Tc) Rds On (Max) @ Id, Vgs: 54 mOhm @ 3.2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN1010D-3 Package / Case: 3-XDFN Exposed Pad	Paket: 3-XDFN Exposed Pad	Lager3.200	MOSFET (Metal Oxide)	20V	3.2A (Ta)	1.5V, 4.5V	900mV @ 250µA	10nC @ 4.5V	551pF @ 10V	±8V	-	400mW (Ta), 8.33W (Tc)	54 mOhm @ 3.2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	DFN1010D-3	3-XDFN Exposed Pad
BSZ42DN25NS3 G	Infineon Technologies	MOSFET N-CH 250V 5A TSDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 13µA Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 33.8W (Tc) Rds On (Max) @ Id, Vgs: 425 mOhm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8 Package / Case: 8-PowerTDFN	Paket: 8-PowerTDFN	Lager51.054	MOSFET (Metal Oxide)	250V	5A (Tc)	10V	4V @ 13µA	5.5nC @ 10V	430pF @ 100V	±20V	-	33.8W (Tc)	425 mOhm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSDSON-8	8-PowerTDFN
NDF0610	onsemi	MOSFET P-CH 60V 180MA TO92-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 180mA (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Paket: -	Request a Quote	MOSFET (Metal Oxide)	60 V	180mA (Ta)	-	3.5V @ 1mA	1.43 nC @ 10 V	60 pF @ 25 V	-	-	-	10Ohm @ 500mA, 10V	-	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
APT6025BLLG	Microchip Technology	MOSFET N-CH 600V 24A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 250mOhm @ 12A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-247 [B] Package / Case: TO-247-3	Paket: -	Request a Quote	MOSFET (Metal Oxide)	600 V	24A (Tc)	-	5V @ 1mA	65 nC @ 10 V	2910 pF @ 25 V	-	-	-	250mOhm @ 12A, 10V	-	Through Hole	TO-247 [B]	TO-247-3
BSH103BKR	Nexperia USA Inc.	BSH103BK - 30 V, N-CHANNEL TRENC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 79.3 pF @ 15 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 330mW (Ta), 2.1W (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB Package / Case: TO-236-3, SC-59, SOT-23-3	Paket: -	Lager61.914	MOSFET (Metal Oxide)	30 V	1A (Ta)	1.8V, 4.5V	1.25V @ 250µA	1.2 nC @ 4.5 V	79.3 pF @ 15 V	±12V	-	330mW (Ta), 2.1W (Tc)	270mOhm @ 1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	TO-236AB	TO-236-3, SC-59, SOT-23-3
UJ4C075060L8SSR	Qorvo	750V/60MO,SICFET,G4,TOLL FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
PJA3449-AU_R1_000A1	Panjit International Inc.	SOT-23, MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 299 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 160mOhm @ 2.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Paket: -	Lager80.910	MOSFET (Metal Oxide)	40 V	2.2A (Ta)	4.5V, 10V	2.1V @ 250µA	7.3 nC @ 10 V	299 pF @ 20 V	±20V	-	1.25W (Ta)	160mOhm @ 2.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
ECH8607-TL-E	Sanyo	N-CHANNEL SILICON MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFH7440TR2PBF	Infineon Technologies	MOSFET N-CH 40V 85A 8PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 3.9V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4574 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerTDFN	Paket: -	Request a Quote	MOSFET (Metal Oxide)	40 V	85A (Tc)	-	3.9V @ 100µA	138 nC @ 10 V	4574 pF @ 25 V	-	-	-	2.4mOhm @ 50A, 10V	-	Surface Mount	8-PQFN (5x6)	8-PowerTDFN
DMP4016SPSWQ-13	Diodes Incorporated	MOSFET BVDSS: 31V~40V POWERDI506 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 86A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.9W (Ta), 119W (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 9.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PowerDI5060-8 (Type UX) Package / Case: 8-PowerTDFN	Paket: -	Request a Quote	MOSFET (Metal Oxide)	40 V	86A (Tc)	4.5V, 10V	2.5V @ 250µA	112 nC @ 10 V	5697 pF @ 20 V	±20V	-	3.9W (Ta), 119W (Tc)	10mOhm @ 9.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount, Wettable Flank	PowerDI5060-8 (Type UX)	8-PowerTDFN
FQB7N60TM-WS	Fairchild Semiconductor	FQB7N60 - MOSFET N-CHANNEL SINGL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 142W (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 3.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Paket: -	Request a Quote	MOSFET (Metal Oxide)	600 V	7.4A (Tc)	10V	5V @ 250µA	38 nC @ 10 V	1430 pF @ 25 V	±30V	-	3.13W (Ta), 142W (Tc)	1Ohm @ 3.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SCH1402-TL-E	onsemi	NCH 1.8V DRIVE SERIES FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DMN2990UFO-7B	Diodes Incorporated	MOSFET N-CH 20V 750MA 3DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 750mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.41 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 15 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 840mW (Ta) Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: X2-DFN0604-3 Package / Case: 3-XFDFN	Paket: -	Lager25.089	MOSFET (Metal Oxide)	20 V	750mA (Ta)	1.5V, 4.5V	1V @ 250µA	0.41 nC @ 4.5 V	31 pF @ 15 V	±8V	-	840mW (Ta)	990mOhm @ 100mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	X2-DFN0604-3	3-XFDFN
IAUA200N04S5N010ATMA1	Infineon Technologies	MOSFET_(20V 40V) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: 3.4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7650 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-5-1 Package / Case: 5-PowerSFN	Paket: -	Request a Quote	MOSFET (Metal Oxide)	40 V	200A (Tc)	7V, 10V	3.4V @ 100µA	132 nC @ 10 V	7650 pF @ 25 V	±20V	-	167W (Tc)	1mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HSOF-5-1	5-PowerSFN
SSF6912	Good-Ark Semiconductor	MOSFET, N-CHANNEL, 60V, 5A, SOT- FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 725 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 2A, 10V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-6L Package / Case: SOT-23-6	Paket: -	Lager17.949	MOSFET (Metal Oxide)	60 V	2.9A (Ta)	4.5V, 10V	2.5V @ 250µA	14 nC @ 10 V	725 pF @ 15 V	±20V	-	1W (Ta)	75mOhm @ 2A, 10V	-50°C ~ 150°C (TJ)	Surface Mount	SOT-23-6L	SOT-23-6
SIHD6N65ET5-GE3	Vishay Siliconix	MOSFET N-CH 650V 7A TO252AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 78W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Paket: -	Request a Quote	MOSFET (Metal Oxide)	650 V	7A (Tc)	10V	4V @ 250µA	48 nC @ 10 V	820 pF @ 100 V	±30V	-	78W (Tc)	600mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
AP2P052N-HF-ML	MOSLEADER	Single P -20V -4A SOT-23S FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-