Page 496 - Transistoren - FETs, MOSFET - Einzeln | Diskrete Halbleiterprodukte

IRFSL4410

Infineon Technologies

MOSFET N-CH 100V 96A TO-262

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5150pF @ 50V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 10 mOhm @ 58A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-262
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

Paket: TO-262-3 Long Leads, I2Pak, TO-262AA

Lager8.796

MOSFET (Metal Oxide)

100V

96A (Tc)

10V

4V @ 150µA

180nC @ 10V

5150pF @ 50V

±20V

-

250W (Tc)

10 mOhm @ 58A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-262

TO-262-3 Long Leads, I2Pak, TO-262AA

NTP18N06

ON Semiconductor

MOSFET N-CH 60V 15A TO220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 48.4W (Tc)
Rds On (Max) @ Id, Vgs: 90 mOhm @ 7.5A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

Paket: TO-220-3

Lager390.180

MOSFET (Metal Oxide)

60V

15A (Tc)

10V

4V @ 250µA

22nC @ 10V

450pF @ 25V

±20V

-

48.4W (Tc)

90 mOhm @ 7.5A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220AB

TO-220-3

IRFI9530G

Vishay Siliconix

MOSFET P-CH 100V 7.7A TO220FP

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 42W (Tc)
Rds On (Max) @ Id, Vgs: 300 mOhm @ 4.6A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Package / Case: TO-220-3 Full Pack, Isolated Tab

Paket: TO-220-3 Full Pack, Isolated Tab

Lager6.240

MOSFET (Metal Oxide)

100V

7.7A (Tc)

10V

4V @ 250µA

38nC @ 10V

860pF @ 25V

±20V

-

42W (Tc)

300 mOhm @ 4.6A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220-3

TO-220-3 Full Pack, Isolated Tab

IPC60R280E6X1SA1

Infineon Technologies

MOSFET N-CH BARE DIE

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

Paket: -

Lager7.296

-

IXTQ102N20T

IXYS

MOSFET N-CH 200V 102A TO3P

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 750W (Tc)
Rds On (Max) @ Id, Vgs: 23 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3P
Package / Case: TO-3P-3, SC-65-3

Paket: TO-3P-3, SC-65-3

Lager103.464

MOSFET (Metal Oxide)

200V

102A (Tc)

-

4.5V @ 1mA

114nC @ 10V

6800pF @ 25V

-

750W (Tc)

23 mOhm @ 500mA, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-3P

TO-3P-3, SC-65-3

AOW292

Alpha & Omega Semiconductor Inc.

MOSFET NCH 100V 105A TO262

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 105A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 126nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6775pF @ 50V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.9W (Ta), 300W (Tc)
Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-262
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

Paket: TO-262-3 Long Leads, I2Pak, TO-262AA

Lager6.016

MOSFET (Metal Oxide)

100V

14.5A (Ta), 105A (Tc)

10V

3.4V @ 250µA

126nC @ 10V

6775pF @ 50V

±20V

-

1.9W (Ta), 300W (Tc)

4.1 mOhm @ 20A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-262

TO-262-3 Long Leads, I2Pak, TO-262AA

SI7804DN-T1-E3

Vishay Siliconix

MOSFET N-CH 30V 6.5A 1212-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 18.5 mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK? 1212-8
Package / Case: PowerPAK? 1212-8

Paket: PowerPAK? 1212-8

Lager52.332

MOSFET (Metal Oxide)

30V

6.5A (Ta)

4.5V, 10V

1.8V @ 250µA

13nC @ 5V

-

±20V

-

1.5W (Ta)

18.5 mOhm @ 10A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? 1212-8

SVD14N03RT4G

ON Semiconductor

MOSFET N-CH 25V 14A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 20V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.04W (Ta), 20.8W (Tc)
Rds On (Max) @ Id, Vgs: 95 mOhm @ 5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paket: TO-252-3, DPak (2 Leads + Tab), SC-63

Lager7.120

MOSFET (Metal Oxide)

25V

2.5A (Ta)

4.5V, 10V

2V @ 250µA

1.8nC @ 5V

115pF @ 20V

±20V

-

1.04W (Ta), 20.8W (Tc)

95 mOhm @ 5A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

DPAK

TO-252-3, DPak (2 Leads + Tab), SC-63

CDM2206-800LR SL

Central Semiconductor Corp

MOSFET N-CH 800V 6A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): 30V
FET Feature: -
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 950 mOhm @ 3A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3

Paket: TO-220-3

Lager20.436

MOSFET (Metal Oxide)

800V

6A (Tc)

10V

4V @ 250µA

24.3nC @ 10V

-

30V

-

110W (Tc)

950 mOhm @ 3A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220

TO-220-3

APT50M75JLLU3

Microsemi Corporation

MOSFET N-CH 500V 51A SOT-227

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 51A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5590pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 290W (Tc)
Rds On (Max) @ Id, Vgs: 75 mOhm @ 25.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227
Package / Case: SOT-227-4, miniBLOC

Paket: SOT-227-4, miniBLOC

Lager7.952

MOSFET (Metal Oxide)

500V

51A

10V

5V @ 1mA

123nC @ 10V

5590pF @ 25V

±30V

-

290W (Tc)

75 mOhm @ 25.5A, 10V

-55°C ~ 150°C (TJ)

Chassis Mount

SOT-227

SOT-227-4, miniBLOC

IRF9Z30PBF

Vishay Siliconix

MOSFET P-CH 50V 18A TO-220AB

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 140 mOhm @ 9.3A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

Paket: TO-220-3

Lager103.464

MOSFET (Metal Oxide)

50V

18A (Tc)

10V

4V @ 250µA

39nC @ 10V

900pF @ 25V

±20V

-

74W (Tc)

140 mOhm @ 9.3A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220AB

TO-220-3

STW28NM60ND

STMicroelectronics

MOSFET N-CH 600V 23A TO-247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 62.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2090pF @ 100V
Vgs (Max): ±25V
FET Feature: -
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 150 mOhm @ 11.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247
Package / Case: TO-247-3

Paket: TO-247-3

Lager6.192

MOSFET (Metal Oxide)

600V

23A (Tc)

10V

5V @ 250µA

62.5nC @ 10V

2090pF @ 100V

±25V

-

190W (Tc)

150 mOhm @ 11.5A, 10V

150°C (TJ)

Through Hole

TO-247

TO-247-3

STP10N95K5

STMicroelectronics

MOSFET N-CH 950V 8A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 950V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 100V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 800 mOhm @ 4A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3

Paket: TO-220-3

Lager3.760

MOSFET (Metal Oxide)

950V

8A (Tc)

10V

5V @ 100µA

22nC @ 10V

630pF @ 100V

±30V

-

130W (Tc)

800 mOhm @ 4A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220

TO-220-3

FDD86102

Fairchild/ON Semiconductor

MOSFET N-CH 100V 8A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1035pF @ 50V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.1W (Ta), 62W (Tc)
Rds On (Max) @ Id, Vgs: 24 mOhm @ 8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paket: TO-252-3, DPak (2 Leads + Tab), SC-63

Lager169.236

MOSFET (Metal Oxide)

100V

8A (Ta), 36A (Tc)

6V, 10V

4V @ 250µA

19nC @ 10V

1035pF @ 50V

±20V

-

3.1W (Ta), 62W (Tc)

24 mOhm @ 8A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-252, (D-Pak)

TO-252-3, DPak (2 Leads + Tab), SC-63

FX6KMJ-3

Renesas Electronics Corporation

6A, 150V, 0.5

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 2420 pF @ 10 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 530mOhm @ 3A, 10V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Through Hole
Supplier Device Package: TO-220FN
Package / Case: TO-220-3 Full Pack

Paket: -

Request a Quote

MOSFET (Metal Oxide)

150 V

6A (Tc)

4V, 10V

2V @ 1mA

-

2420 pF @ 10 V

±20V

-

25W (Tc)

530mOhm @ 3A, 10V

-55°C ~ 150°C

Through Hole

TO-220FN

TO-220-3 Full Pack

RFP12N18

Harris Corporation

N-CHANNEL POWER MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 180 V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 12A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Package / Case: TO-220-3

Paket: -

Request a Quote

MOSFET (Metal Oxide)

180 V

12A (Tc)

10V

4V @ 250µA

-

1700 pF @ 25 V

±20V

-

75W (Tc)

250mOhm @ 12A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3

IXTM21N50L

IXYS

POWER MOSFET TO-3

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

Paket: -

Request a Quote

-

IXTM1630

IXYS

POWER MOSFET TO-3

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

Paket: -

Request a Quote

-

PJQ2405-AU_R1_000A1

Panjit International Inc.

20V P-CHANNEL ENHANCEMENT MODE M

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 7.2A
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1785 pF @ 10 V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 2.8W (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7.2A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DFN2020B-6
Package / Case: 6-WDFN Exposed Pad

Paket: -

Request a Quote

MOSFET (Metal Oxide)

20 V

7.2A

1.8V, 4.5V

900mV @ 250µA

18.9 nC @ 4.5 V

1785 pF @ 10 V

±8V

-

2.8W (Ta)

32mOhm @ 7.2A, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

DFN2020B-6

6-WDFN Exposed Pad

NVMFS5H610NLWFT1G

onsemi

T8 60V LOW COSS

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.6W (Tc), 52W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 8A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Package / Case: 8-PowerTDFN, 5 Leads

Paket: -

Request a Quote

MOSFET (Metal Oxide)

60 V

13A (Ta), 48A (Tc)

4.5V, 10V

2V @ 40µA

13.7 nC @ 10 V

880 pF @ 30 V

±20V

-

3.6W (Tc), 52W (Tc)

10mOhm @ 8A, 10V

-55°C ~ 175°C (TJ)

Surface Mount, Wettable Flank

5-DFNW (4.9x5.9) (8-SOFL-WF)

8-PowerTDFN, 5 Leads

MCTL320N04YQ-TP

Micro Commercial Co

MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 320A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6914 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 214W (Tj)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 75A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TOLL-8L
Package / Case: 8-PowerSFN

Paket: -

Request a Quote

MOSFET (Metal Oxide)

40 V

320A (Tc)

6V, 10V

3V @ 1mA

88 nC @ 10 V

6914 pF @ 25 V

±20V

-

214W (Tj)

1.1mOhm @ 75A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

TOLL-8L

8-PowerSFN

SI3134KL3B-TP

Micro Commercial Co

N-CHANNEL MOSFET,DFN1006-3A

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 16 V
Vgs (Max): ±10V
FET Feature: -
Power Dissipation (Max): 900mW (Tj)
Rds On (Max) @ Id, Vgs: 250mOhm @ 500mA, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DFN1006-3A
Package / Case: 3-XFDFN

Paket: -

Request a Quote

MOSFET (Metal Oxide)

20 V

750mA (Ta)

1.8V, 4.5V

1.2V @ 250µA

1.2 nC @ 4.5 V

33 pF @ 16 V

±10V

-

900mW (Tj)

250mOhm @ 500mA, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

DFN1006-3A

3-XFDFN

PCF8051LW

onsemi

MOSFET N-CH

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

Paket: -

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-

XP3P7R0EM

YAGEO XSEMI

MOSFET P-CH 30V 15.5A 8SO

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 52.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6880 pF @ 15 V
Vgs (Max): ±25V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 17A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC

Paket: -

Lager3.000

MOSFET (Metal Oxide)

30 V

15.5A (Ta)

4.5V, 10V

2V @ 250µA

52.8 nC @ 4.5 V

6880 pF @ 15 V

±25V

-

2.5W (Ta)

7mOhm @ 17A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-SO

8-SOIC

FW705-TL-E

Sanyo

P-CHANNEL SILICON MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

Paket: -

Request a Quote

-

RJ1L08CGNTLL

Rohm Semiconductor

MOSFET N-CH 60V 80A LPTL

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 80A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: LPTL
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Paket: -

Lager5.940

MOSFET (Metal Oxide)

60 V

80A (Tc)

4.5V, 10V

2.5V @ 50µA

55 nC @ 10 V

2600 pF @ 30 V

±20V

-

96W (Tc)

7.7mOhm @ 80A, 10V

150°C (TJ)

Surface Mount

LPTL

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TSM085NB03CV

Taiwan Semiconductor Corporation

30V, 58A, SINGLE N-CHANNEL

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1101 pF @ 15 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.92W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 11A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-PDFN (3.15x3.1)
Package / Case: 8-PowerWDFN

Paket: -

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MOSFET (Metal Oxide)

30 V

11A (Ta), 58A (Tc)

4.5V, 10V

2.5V @ 250µA

20 nC @ 10 V

1101 pF @ 15 V

±20V

-

1.92W (Ta), 52W (Tc)

8.5mOhm @ 11A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-PDFN (3.15x3.1)

8-PowerWDFN

STS2301-ML

MOSLEADER

Single-P -20V -3.4A SOT-23

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

Paket: -

Request a Quote

-

Teilenummer	Hersteller	Beschreibung	Paket	Lager	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRFSL4410	Infineon Technologies	MOSFET N-CH 100V 96A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 96A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5150pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 58A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Paket: TO-262-3 Long Leads, I2Pak, TO-262AA	Lager8.796	MOSFET (Metal Oxide)	100V	96A (Tc)	10V	4V @ 150µA	180nC @ 10V	5150pF @ 50V	±20V	-	250W (Tc)	10 mOhm @ 58A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
NTP18N06	ON Semiconductor	MOSFET N-CH 60V 15A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 48.4W (Tc) Rds On (Max) @ Id, Vgs: 90 mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Paket: TO-220-3	Lager390.180	MOSFET (Metal Oxide)	60V	15A (Tc)	10V	4V @ 250µA	22nC @ 10V	450pF @ 25V	±20V	-	48.4W (Tc)	90 mOhm @ 7.5A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFI9530G	Vishay Siliconix	MOSFET P-CH 100V 7.7A TO220FP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 4.6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Paket: TO-220-3 Full Pack, Isolated Tab	Lager6.240	MOSFET (Metal Oxide)	100V	7.7A (Tc)	10V	4V @ 250µA	38nC @ 10V	860pF @ 25V	±20V	-	42W (Tc)	300 mOhm @ 4.6A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
IPC60R280E6X1SA1	Infineon Technologies	MOSFET N-CH BARE DIE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Paket: -	Lager7.296	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTQ102N20T	IXYS	MOSFET N-CH 200V 102A TO3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 102A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V Vgs (Max): - FET Feature: - Power Dissipation (Max): 750W (Tc) Rds On (Max) @ Id, Vgs: 23 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Paket: TO-3P-3, SC-65-3	Lager103.464	MOSFET (Metal Oxide)	200V	102A (Tc)	-	4.5V @ 1mA	114nC @ 10V	6800pF @ 25V	-	-	750W (Tc)	23 mOhm @ 500mA, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
AOW292	Alpha & Omega Semiconductor Inc.	MOSFET NCH 100V 105A TO262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 105A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 126nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6775pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.9W (Ta), 300W (Tc) Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Paket: TO-262-3 Long Leads, I2Pak, TO-262AA	Lager6.016	MOSFET (Metal Oxide)	100V	14.5A (Ta), 105A (Tc)	10V	3.4V @ 250µA	126nC @ 10V	6775pF @ 50V	±20V	-	1.9W (Ta), 300W (Tc)	4.1 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
SI7804DN-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 6.5A 1212-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 18.5 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Paket: PowerPAK? 1212-8	Lager52.332	MOSFET (Metal Oxide)	30V	6.5A (Ta)	4.5V, 10V	1.8V @ 250µA	13nC @ 5V	-	±20V	-	1.5W (Ta)	18.5 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
SVD14N03RT4G	ON Semiconductor	MOSFET N-CH 25V 14A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.04W (Ta), 20.8W (Tc) Rds On (Max) @ Id, Vgs: 95 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Paket: TO-252-3, DPak (2 Leads + Tab), SC-63	Lager7.120	MOSFET (Metal Oxide)	25V	2.5A (Ta)	4.5V, 10V	2V @ 250µA	1.8nC @ 5V	115pF @ 20V	±20V	-	1.04W (Ta), 20.8W (Tc)	95 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
CDM2206-800LR SL	Central Semiconductor Corp	MOSFET N-CH 800V 6A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): 30V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 950 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Paket: TO-220-3	Lager20.436	MOSFET (Metal Oxide)	800V	6A (Tc)	10V	4V @ 250µA	24.3nC @ 10V	-	30V	-	110W (Tc)	950 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
APT50M75JLLU3	Microsemi Corporation	MOSFET N-CH 500V 51A SOT-227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 51A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5590pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 290W (Tc) Rds On (Max) @ Id, Vgs: 75 mOhm @ 25.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 Package / Case: SOT-227-4, miniBLOC	Paket: SOT-227-4, miniBLOC	Lager7.952	MOSFET (Metal Oxide)	500V	51A	10V	5V @ 1mA	123nC @ 10V	5590pF @ 25V	±30V	-	290W (Tc)	75 mOhm @ 25.5A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227	SOT-227-4, miniBLOC
IRF9Z30PBF	Vishay Siliconix	MOSFET P-CH 50V 18A TO-220AB FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 140 mOhm @ 9.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Paket: TO-220-3	Lager103.464	MOSFET (Metal Oxide)	50V	18A (Tc)	10V	4V @ 250µA	39nC @ 10V	900pF @ 25V	±20V	-	74W (Tc)	140 mOhm @ 9.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STW28NM60ND	STMicroelectronics	MOSFET N-CH 600V 23A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2090pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 150 mOhm @ 11.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Paket: TO-247-3	Lager6.192	MOSFET (Metal Oxide)	600V	23A (Tc)	10V	5V @ 250µA	62.5nC @ 10V	2090pF @ 100V	±25V	-	190W (Tc)	150 mOhm @ 11.5A, 10V	150°C (TJ)	Through Hole	TO-247	TO-247-3
STP10N95K5	STMicroelectronics	MOSFET N-CH 950V 8A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 800 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Paket: TO-220-3	Lager3.760	MOSFET (Metal Oxide)	950V	8A (Tc)	10V	5V @ 100µA	22nC @ 10V	630pF @ 100V	±30V	-	130W (Tc)	800 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
FDD86102	Fairchild/ON Semiconductor	MOSFET N-CH 100V 8A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1035pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 62W (Tc) Rds On (Max) @ Id, Vgs: 24 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Paket: TO-252-3, DPak (2 Leads + Tab), SC-63	Lager169.236	MOSFET (Metal Oxide)	100V	8A (Ta), 36A (Tc)	6V, 10V	4V @ 250µA	19nC @ 10V	1035pF @ 50V	±20V	-	3.1W (Ta), 62W (Tc)	24 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
FX6KMJ-3	Renesas Electronics Corporation	6A, 150V, 0.5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2420 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 530mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C Mounting Type: Through Hole Supplier Device Package: TO-220FN Package / Case: TO-220-3 Full Pack	Paket: -	Request a Quote	MOSFET (Metal Oxide)	150 V	6A (Tc)	4V, 10V	2V @ 1mA	-	2420 pF @ 10 V	±20V	-	25W (Tc)	530mOhm @ 3A, 10V	-55°C ~ 150°C	Through Hole	TO-220FN	TO-220-3 Full Pack
RFP12N18	Harris Corporation	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 180 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Paket: -	Request a Quote	MOSFET (Metal Oxide)	180 V	12A (Tc)	10V	4V @ 250µA	-	1700 pF @ 25 V	±20V	-	75W (Tc)	250mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
IXTM21N50L	IXYS	POWER MOSFET TO-3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTM1630	IXYS	POWER MOSFET TO-3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
PJQ2405-AU_R1_000A1	Panjit International Inc.	20V P-CHANNEL ENHANCEMENT MODE M FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 7.2A Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1785 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2.8W (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 7.2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN2020B-6 Package / Case: 6-WDFN Exposed Pad	Paket: -	Request a Quote	MOSFET (Metal Oxide)	20 V	7.2A	1.8V, 4.5V	900mV @ 250µA	18.9 nC @ 4.5 V	1785 pF @ 10 V	±8V	-	2.8W (Ta)	32mOhm @ 7.2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	DFN2020B-6	6-WDFN Exposed Pad
NVMFS5H610NLWFT1G	onsemi	T8 60V LOW COSS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 40µA Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Tc), 52W (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 8A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Package / Case: 8-PowerTDFN, 5 Leads	Paket: -	Request a Quote	MOSFET (Metal Oxide)	60 V	13A (Ta), 48A (Tc)	4.5V, 10V	2V @ 40µA	13.7 nC @ 10 V	880 pF @ 30 V	±20V	-	3.6W (Tc), 52W (Tc)	10mOhm @ 8A, 10V	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	5-DFNW (4.9x5.9) (8-SOFL-WF)	8-PowerTDFN, 5 Leads
MCTL320N04YQ-TP	Micro Commercial Co	MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 320A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6914 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 214W (Tj) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TOLL-8L Package / Case: 8-PowerSFN	Paket: -	Request a Quote	MOSFET (Metal Oxide)	40 V	320A (Tc)	6V, 10V	3V @ 1mA	88 nC @ 10 V	6914 pF @ 25 V	±20V	-	214W (Tj)	1.1mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TOLL-8L	8-PowerSFN
SI3134KL3B-TP	Micro Commercial Co	N-CHANNEL MOSFET,DFN1006-3A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 750mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 16 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 900mW (Tj) Rds On (Max) @ Id, Vgs: 250mOhm @ 500mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN1006-3A Package / Case: 3-XFDFN	Paket: -	Request a Quote	MOSFET (Metal Oxide)	20 V	750mA (Ta)	1.8V, 4.5V	1.2V @ 250µA	1.2 nC @ 4.5 V	33 pF @ 16 V	±10V	-	900mW (Tj)	250mOhm @ 500mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	DFN1006-3A	3-XFDFN
PCF8051LW	onsemi	MOSFET N-CH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
XP3P7R0EM	YAGEO XSEMI	MOSFET P-CH 30V 15.5A 8SO FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 52.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 6880 pF @ 15 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 7mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC	Paket: -	Lager3.000	MOSFET (Metal Oxide)	30 V	15.5A (Ta)	4.5V, 10V	2V @ 250µA	52.8 nC @ 4.5 V	6880 pF @ 15 V	±25V	-	2.5W (Ta)	7mOhm @ 17A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC
FW705-TL-E	Sanyo	P-CHANNEL SILICON MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RJ1L08CGNTLL	Rohm Semiconductor	MOSFET N-CH 60V 80A LPTL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 96W (Tc) Rds On (Max) @ Id, Vgs: 7.7mOhm @ 80A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTL Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Paket: -	Lager5.940	MOSFET (Metal Oxide)	60 V	80A (Tc)	4.5V, 10V	2.5V @ 50µA	55 nC @ 10 V	2600 pF @ 30 V	±20V	-	96W (Tc)	7.7mOhm @ 80A, 10V	150°C (TJ)	Surface Mount	LPTL	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TSM085NB03CV	Taiwan Semiconductor Corporation	30V, 58A, SINGLE N-CHANNEL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1101 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.92W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (3.15x3.1) Package / Case: 8-PowerWDFN	Paket: -	Request a Quote	MOSFET (Metal Oxide)	30 V	11A (Ta), 58A (Tc)	4.5V, 10V	2.5V @ 250µA	20 nC @ 10 V	1101 pF @ 15 V	±20V	-	1.92W (Ta), 52W (Tc)	8.5mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PDFN (3.15x3.1)	8-PowerWDFN
STS2301-ML	MOSLEADER	Single-P -20V -3.4A SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-