Bild |
Teilenummer |
Hersteller |
Beschreibung |
Paket |
Lager |
Anzahl |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Infineon Technologies |
MOSFET N-CH 20V 180A D2PAK
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Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Lager4.592 |
|
MOSFET (Metal Oxide) | 20V | 180A (Tc) | 4.5V, 10V | 3V @ 250µA | 79nC @ 4.5V | 5090pF @ 10V | ±20V | - | 210W (Tc) | 4 mOhm @ 90A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 9A 8-SOIC
|
Paket: 8-SOIC (0.154", 3.90mm Width) |
Lager187.104 |
|
MOSFET (Metal Oxide) | 40V | 9A (Ta) | 4.5V, 10V | 3V @ 250µA | 23nC @ 4.5V | 2000pF @ 20V | ±20V | - | 2.5W (Ta) | 17 mOhm @ 9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 100V 59A TO-262
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Paket: TO-262-3 Long Leads, I2Pak, TO-262AA |
Lager4.608 |
|
MOSFET (Metal Oxide) | 100V | 59A (Tc) | 10V | 5.5V @ 250µA | 114nC @ 10V | 2450pF @ 25V | ±30V | - | 3.8W (Ta), 200W (Tc) | 25 mOhm @ 35.4A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 600V 2A DPAK
|
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager54.504 |
|
MOSFET (Metal Oxide) | 600V | 2A (Tc) | 10V | 4V @ 250µA | 18nC @ 10V | 350pF @ 25V | ±20V | - | 2.5W (Ta), 42W (Tc) | 4.4 Ohm @ 1.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 30V 3.2A SSOT6
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Paket: SOT-23-6 Thin, TSOT-23-6 |
Lager585.360 |
|
MOSFET (Metal Oxide) | 30V | 3.2A (Ta) | 4.5V, 10V | 3V @ 250µA | 20nC @ 10V | 290pF @ 15V | 20V | - | 1.6W (Ta) | 60 mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT?-6 | SOT-23-6 Thin, TSOT-23-6 |
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Microsemi Corporation |
MOSFET N-CH 1000V 35A T-MAX
|
Paket: TO-247-3 Variant |
Lager5.936 |
|
MOSFET (Metal Oxide) | 1000V | 35A (Tc) | 10V | 5V @ 2.5mA | 305nC @ 10V | 9835pF @ 25V | ±30V | - | 1135W (Tc) | 380 mOhm @ 18A, 10V | -55°C ~ 150°C (TJ) | Through Hole | T-MAX? [B2] | TO-247-3 Variant |
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IXYS |
MOSFET N-CH 300V 52A TO-247
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Paket: TO-247-3 |
Lager167.064 |
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MOSFET (Metal Oxide) | 300V | 52A (Tc) | 10V | 5V @ 4mA | 110nC @ 10V | 3490pF @ 25V | ±20V | - | 400W (Tc) | 66 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 20A 8SOP-ADV
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Paket: 8-PowerVDFN |
Lager6.288 |
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MOSFET (Metal Oxide) | 30V | 20A (Ta) | 4.5V, 10V | 2.3V @ 200µA | 23nC @ 10V | 1900pF @ 10V | ±20V | - | 1.6W (Ta), 32W (Tc) | 8.2 mOhm @ 10A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Vishay Siliconix |
MOSFET N-CH 25V 16.2A 8-SOIC
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Paket: 8-SOIC (0.154", 3.90mm Width) |
Lager378.300 |
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MOSFET (Metal Oxide) | 25V | 16.2A (Tc) | 4.5V, 10V | 2.6V @ 250µA | 42nC @ 10V | 1654pF @ 15V | ±16V | - | 2.5W (Ta), 5W (Tc) | 10.5 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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IXYS |
MOSFET N-CH 250V 80A TO263AA
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Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Lager7.648 |
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MOSFET (Metal Oxide) | 250V | 80A (Tc) | 10V | 4.5V @ 1.5mA | 83nC @ 10V | 5430pF @ 25V | ±20V | - | 390W (Tc) | 16 mOhm @ 40A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263AA | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
POWER MOSFET
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Paket: - |
Lager3.344 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 30V 21A PQFN
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Paket: 8-VQFN Exposed Pad |
Lager9.252 |
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MOSFET (Metal Oxide) | 30V | 21A (Ta), 40A (Tc) | 2.5V, 10V | 1.1V @ 50µA | 62nC @ 4.5V | 3170pF @ 25V | ±12V | - | 2.7W (Ta), 37W (Tc) | 3.5 mOhm @ 20A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (3x3) | 8-VQFN Exposed Pad |
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Infineon Technologies |
MOSFET N-CH 560V 16A TO-247
|
Paket: TO-247-3 |
Lager16.692 |
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MOSFET (Metal Oxide) | 560V | 16A (Tc) | 10V | 3.9V @ 675µA | 66nC @ 10V | 1600pF @ 25V | ±20V | - | 160W (Tc) | 280 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Rohm Semiconductor |
MOSFET N-CH 250V 5A TO220
|
Paket: TO-220-2 Full Pack |
Lager9.804 |
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MOSFET (Metal Oxide) | 250V | 5A (Tc) | 10V | 5.5V @ 1mA | 8.5nC @ 10V | 350pF @ 25V | ±30V | - | 2.23W (Ta), 30W (Tc) | 1.36 Ohm @ 2.5A, 10V | 150°C (TJ) | Through Hole | TO-220FM | TO-220-2 Full Pack |
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STMicroelectronics |
MOSFET N-CH 100V 35A TO-220
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Paket: TO-220-3 |
Lager1.129.572 |
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MOSFET (Metal Oxide) | 100V | 35A (Tc) | 10V | 4V @ 250µA | 55nC @ 10V | 1180pF @ 25V | ±20V | - | 115W (Tc) | 45 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 15A TO-3PN
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Paket: TO-3P-3, SC-65-3 |
Lager23.100 |
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MOSFET (Metal Oxide) | 600V | 15A (Ta) | 10V | 5V @ 1mA | 17nC @ 10V | 950pF @ 10V | ±30V | - | 170W (Tc) | 300 mOhm @ 7.5A, 10V | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
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Nexperia USA Inc. |
MOSFET N-CH 55V 75A TO220AB
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Paket: TO-220-5 |
Lager34.410 |
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MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 4V @ 1mA | 116nC @ 10V | 4500pF @ 25V | ±20V | - | 272W (Tc) | 7 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
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Texas Instruments |
MOSFET N-CH 25V 52A 8-SON
|
Paket: 8-PowerTDFN |
Lager182.904 |
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MOSFET (Metal Oxide) | 25V | 14A (Ta), 52A (Tc) | 4.5V, 10V | 2.3V @ 250µA | 3.8nC @ 4.5V | 530pF @ 12.5V | +16V, -12V | - | 3W (Ta) | 11 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON (5x6) | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CH 250V 7.9A TO220FP
|
Paket: TO-220-3 Full Pack, Isolated Tab |
Lager9.924 |
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MOSFET (Metal Oxide) | 250V | 7.9A (Tc) | 10V | 4V @ 250µA | 68nC @ 10V | 1300pF @ 25V | ±20V | - | 40W (Tc) | 280 mOhm @ 4.7A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Nexperia USA Inc. |
MOSFET N-CH 100V 75A D2PAK
|
Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Lager14.706 |
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MOSFET (Metal Oxide) | 100V | 75A (Tc) | 10V | 4V @ 1mA | 80nC @ 10V | 6773pF @ 25V | ±20V | - | 300W (Tc) | 10 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET P-CH 20V 5.6A 8-SOIC
|
Paket: 8-SOIC (0.154", 3.90mm Width) |
Lager470.016 |
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MOSFET (Metal Oxide) | 20V | 5.6A (Ta) | 4.5V, 10V | 2V @ 250µA | 46nC @ 10V | 1400pF @ 16V | ±20V | - | 2.5W (Ta) | 75 mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Nexperia USA Inc. |
MOSFET N-CH 30V 70A LFPAK33
|
Paket: SOT-1210, 8-LFPAK33 (5-Lead) |
Lager105.720 |
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MOSFET (Metal Oxide) | 30V | 70A (Tc) | 4.5V, 10V | 2.2V @ 1mA | 51nC @ 10V | 3264pF @ 15V | ±20V | - | 91W (Tc) | 2.4 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK33 | SOT-1210, 8-LFPAK33 (5-Lead) |
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onsemi |
MOSFET N-CH 40V 19A/82A DPAK
|
Paket: - |
Lager14.697 |
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MOSFET (Metal Oxide) | 40 V | 19A (Ta), 82A (Tc) | 10V | 4V @ 70µA | 32 nC @ 10 V | 1900 pF @ 25 V | ±20V | - | 3.1W (Ta), 56W (Tc) | 4.2mOhm @ 40A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR TO-
|
Paket: - |
Lager150 |
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MOSFET (Metal Oxide) | 650 V | 27.6A (Ta) | 10V | 3.5V @ 1.6mA | 75 nC @ 10 V | 3000 pF @ 300 V | ±30V | - | 230W (Tc) | 110mOhm @ 13.8A, 10V | 150°C | Through Hole | TO-220 | TO-220-3 |
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Infineon Technologies |
TRENCH <= 40V
|
Paket: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 15A (Ta) | 4.5V, 10V | 2.4V @ 50µA | 98 nC @ 10 V | 2590 pF @ 25 V | ±20V | - | 2.5W (Ta) | 7.2mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Alpha & Omega Semiconductor Inc. |
N
|
Paket: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 80 V | 39A (Ta), 80A (Tc) | 8V, 10V | 3.8V @ 250µA | 110 nC @ 10 V | 5750 pF @ 40 V | ±20V | - | 8.3W (Ta), 34W (Tc) | 3mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 600V 25A TO220-3
|
Paket: - |
Lager1.428 |
|
MOSFET (Metal Oxide) | 600 V | 25A (Tc) | 10V | 4.5V @ 570µA | 51 nC @ 10 V | 2103 pF @ 400 V | ±20V | - | 125W (Tc) | 90mOhm @ 11.4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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IceMOS Technology |
Superjunction MOSFET
|
Paket: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 22A (Tc) | 10V | 3.9V @ 250µA | 72 nC @ 10 V | 2730 pF @ 25 V | ±20V | - | 208W (Tc) | 160mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 | TO-263-3, D2PAK (2 Leads + Tab), Variant |
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Panjit International Inc. |
40V P-CHANNEL ENHANCEMENT MODE M
|
Paket: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 8.5A (Ta), 45A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 19 nC @ 4.5 V | 2030 pF @ 25 V | ±20V | - | 2W (Ta), 63W (Tc) | 17mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DFN5060-8 | 8-PowerVDFN |
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Nexperia USA Inc. |
PMPB12R5EP - 30 V, P-CHANNEL TRE
|
Paket: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 8.8A (Ta) | 4.5V, 10V | 2V @ 250µA | 44 nC @ 10 V | 1392 pF @ 15 V | ±20V | - | 1.9W (Ta), 12.5W (Tc) | 15mOhm @ 8.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DFN2020M-6 | 6-UDFN Exposed Pad |