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Transistoren - FETs, MOSFET - Einzeln

Aufzeichnungen 42.029
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Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IRF7834PBF
Infineon Technologies

MOSFET N-CH 30V 19A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3710pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 19A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager3.488
MOSFET (Metal Oxide)
30V
19A (Ta)
4.5V, 10V
2.25V @ 250µA
44nC @ 4.5V
3710pF @ 15V
±20V
-
2.5W (Ta)
4.5 mOhm @ 19A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot BUZ73
Infineon Technologies

MOSFET N-CH 200V 7A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 400 mOhm @ 4.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO-220-3
  • Package / Case: TO-220-3
Paket: TO-220-3
Lager17.316
MOSFET (Metal Oxide)
200V
7A (Tc)
10V
4V @ 1mA
-
530pF @ 25V
±20V
-
40W (Tc)
400 mOhm @ 4.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO-220-3
TO-220-3
hot IRL3302S
Infineon Technologies

MOSFET N-CH 20V 39A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 31nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 57W (Tc)
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 23A, 7V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Lager232.776
MOSFET (Metal Oxide)
20V
39A (Tc)
4.5V, 7V
700mV @ 250µA
31nC @ 4.5V
1300pF @ 15V
±10V
-
57W (Tc)
20 mOhm @ 23A, 7V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
AON6266_101
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 60V 24A 8DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 38W (Tc)
  • Rds On (Max) @ Id, Vgs: 15 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DFN (5x6)
  • Package / Case: 8-PowerVDFN
Paket: 8-PowerVDFN
Lager3.568
MOSFET (Metal Oxide)
60V
30A (Tc)
4.5V, 10V
2.5V @ 250µA
15nC @ 4.5V
1340pF @ 30V
±20V
-
38W (Tc)
15 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-DFN (5x6)
8-PowerVDFN
PSMN1R6-40YLC,115
Nexperia USA Inc.

MOSFET N-CH 40V 100A LFPAK-SO8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1.95V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 126nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7790pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 288W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.55 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SOT-1023, 4-LFPAK
Paket: SOT-1023, 4-LFPAK
Lager4.624
MOSFET (Metal Oxide)
40V
100A (Tc)
4.5V, 10V
1.95V @ 1mA
126nC @ 10V
7790pF @ 20V
±20V
-
288W (Tc)
1.55 mOhm @ 25A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
LFPAK56, Power-SO8
SOT-1023, 4-LFPAK
HUF75545S3
Fairchild/ON Semiconductor

MOSFET N-CH 80V 75A TO-262AA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 235nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 270W (Tc)
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262AA
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
Paket: TO-262-3 Long Leads, I2Pak, TO-262AA
Lager2.128
MOSFET (Metal Oxide)
80V
75A (Tc)
10V
4V @ 250µA
235nC @ 20V
3750pF @ 25V
±20V
-
270W (Tc)
10 mOhm @ 75A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-262AA
TO-262-3 Long Leads, I2Pak, TO-262AA
STY30NK90Z
STMicroelectronics

MOSFET N-CH 900V 26A MAX247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 490nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 450W (Tc)
  • Rds On (Max) @ Id, Vgs: 260 mOhm @ 14A, 10V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: MAX247?
  • Package / Case: TO-247-3
Paket: TO-247-3
Lager5.424
MOSFET (Metal Oxide)
900V
26A (Tc)
10V
4.5V @ 150µA
490nC @ 10V
12000pF @ 25V
±30V
-
450W (Tc)
260 mOhm @ 14A, 10V
-65°C ~ 150°C (TJ)
Through Hole
MAX247?
TO-247-3
hot IRFL9110
Vishay Siliconix

MOSFET P-CH 100V 1.1A SOT223

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 1.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 660mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
Paket: TO-261-4, TO-261AA
Lager711.876
MOSFET (Metal Oxide)
100V
1.1A (Tc)
10V
4V @ 250µA
8.7nC @ 10V
200pF @ 25V
±20V
-
2W (Ta), 3.1W (Tc)
1.2 Ohm @ 660mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
NVMFS6B03NT3G
ON Semiconductor

MOSFET N-CH 100V 132A SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 50V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 3.9W (Ta), 198W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN
Paket: 8-PowerTDFN
Lager3.376
MOSFET (Metal Oxide)
100V
-
10V
4V @ 250µA
58nC @ 10V
4200pF @ 50V
±16V
-
3.9W (Ta), 198W (Tc)
4.8 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN
BUK7C08-55AITE,118
Nexperia USA Inc.

MOSFET N-CH 55V 75A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 116nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Current Sensing
  • Power Dissipation (Max): 272W (Tc)
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Paket: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Lager4.384
MOSFET (Metal Oxide)
55V
75A (Tc)
10V
4V @ 1mA
116nC @ 10V
4200pF @ 25V
±20V
Current Sensing
272W (Tc)
8 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
STI33N65M2
STMicroelectronics

MOSFET N-CH 650V 24A I2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 41.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1790pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 190W (Tc)
  • Rds On (Max) @ Id, Vgs: 140 mOhm @ 12A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAK
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
Paket: TO-262-3 Long Leads, I2Pak, TO-262AA
Lager3.504
MOSFET (Metal Oxide)
650V
24A (Tc)
10V
4V @ 250µA
41.5nC @ 10V
1790pF @ 100V
±25V
-
190W (Tc)
140 mOhm @ 12A, 10V
150°C (TJ)
Through Hole
I2PAK
TO-262-3 Long Leads, I2Pak, TO-262AA
STP7LN80K5
STMicroelectronics

MOSFET N-CH 800V 5A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 85W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.15 Ohm @ 2.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
Paket: TO-220-3
Lager19.680
MOSFET (Metal Oxide)
800V
5A (Tc)
10V
5V @ 100µA
12nC @ 10V
270pF @ 100V
±30V
-
85W (Tc)
1.15 Ohm @ 2.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
BSZ110N08NS5ATMA1
Infineon Technologies

MOSFET N-CH 80V 40A 8TSDSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 22µA
  • Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 40V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 11 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TSDSON-8-FL
  • Package / Case: 8-PowerTDFN
Paket: 8-PowerTDFN
Lager5.632
MOSFET (Metal Oxide)
80V
40A (Tc)
6V, 10V
3.8V @ 22µA
18.5nC @ 10V
1300pF @ 40V
±20V
-
50W (Tc)
11 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8-FL
8-PowerTDFN
TK17E65W,S1X
Toshiba Semiconductor and Storage

MOSFET N-CH 650V 17.3A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 900µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 300V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 165W (Tc)
  • Rds On (Max) @ Id, Vgs: 200 mOhm @ 8.7A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
Paket: TO-220-3
Lager8.172
MOSFET (Metal Oxide)
650V
17.3A (Ta)
10V
3.5V @ 900µA
45nC @ 10V
1800pF @ 300V
±30V
-
165W (Tc)
200 mOhm @ 8.7A, 10V
150°C (TJ)
Through Hole
TO-220
TO-220-3
SQD50P08-25L_GE3
Vishay Siliconix

MOSFET P-CHAN 80V TO252

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 137nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5350pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 136W (Tc)
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 10.5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63
Lager4.032
MOSFET (Metal Oxide)
80V
50A (Tc)
4.5V, 10V
2.5V @ 250µA
137nC @ 10V
5350pF @ 25V
±20V
-
136W (Tc)
25 mOhm @ 10.5A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPak (2 Leads + Tab), SC-63
SSM6J801R,LF
Toshiba Semiconductor and Storage

SMALL-SIGNAL PCH MOSFET UMOSVI

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 12.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 10V
  • Vgs (Max): +6V, -8V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 32.5 mOhm @ 3A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: -
  • Package / Case: -
Paket: -
Lager52.074
MOSFET (Metal Oxide)
20V
6A (Ta)
1.5V, 4.5V
1V @ 1mA
12.8nC @ 4.5V
840pF @ 10V
+6V, -8V
-
1.5W (Ta)
32.5 mOhm @ 3A, 4.5V
150°C (TJ)
Surface Mount
-
-
hot IRLS4030-7PPBF
Infineon Technologies

MOSFET N-CH 100V 190A D2PAK-7

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 190A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 11490pF @ 50V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 370W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 110A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (7-Lead)
  • Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Paket: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Lager6.336
MOSFET (Metal Oxide)
100V
190A (Tc)
4.5V, 10V
2.5V @ 250µA
140nC @ 4.5V
11490pF @ 50V
±16V
-
370W (Tc)
3.9 mOhm @ 110A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK (7-Lead)
TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
EC4307KF-TR
onsemi

PCH 1.8V DRIVE SERIES

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
Paket: -
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FCPF11N65_G
onsemi

INTEGRATED CIRCUIT

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
Paket: -
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AOTL66810
Alpha & Omega Semiconductor Inc.

DESC: MOSFET N-CH 80V 65A TOLLA

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: TOLLA
  • Package / Case: 8-PowerSFN
Paket: -
Request a Quote
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Surface Mount
TOLLA
8-PowerSFN
RD3P100SNTL1
Rohm Semiconductor

MOSFET N-CH 100V 10A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 20W (Tc)
  • Rds On (Max) @ Id, Vgs: 133mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Paket: -
Lager50.049
MOSFET (Metal Oxide)
100 V
10A (Ta)
4V, 10V
2.5V @ 1mA
18 nC @ 10 V
700 pF @ 25 V
±20V
-
20W (Tc)
133mOhm @ 5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
FBG10N05ASH
EPC Space, LLC

GAN FET HEMT 100V 5A 4FSMD-A

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 1.2mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 233 pF @ 50 V
  • Vgs (Max): +6V, -4V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 4-SMD
  • Package / Case: 4-SMD, No Lead
Paket: -
Lager147
GaNFET (Gallium Nitride)
100 V
5A (Tc)
5V
2.5V @ 1.2mA
2.2 nC @ 5 V
233 pF @ 50 V
+6V, -4V
-
-
45mOhm @ 5A, 5V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD
4-SMD, No Lead
2N7002W-HF
Comchip Technology

MOSFET N-CH 60V 0.115A SOT323

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 200mW (Ta)
  • Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-323
  • Package / Case: SC-70, SOT-323
Paket: -
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MOSFET (Metal Oxide)
60 V
115mA (Ta)
5V, 10V
2.5V @ 250µA
-
50 pF @ 25 V
±20V
-
200mW (Ta)
5Ohm @ 500mA, 10V
150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
PMV28XPEAR
Nexperia USA Inc.

SMALL SIGNAL MOSFET FOR AUTOMOTI

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 610mW (Ta), 8.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 33mOhm @ 5A, 8V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-236AB
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Paket: -
Lager9.000
MOSFET (Metal Oxide)
20 V
5A (Ta)
2.5V, 8V
1.3V @ 250µA
16 nC @ 4.5 V
1025 pF @ 10 V
±12V
-
610mW (Ta), 8.3W (Tc)
33mOhm @ 5A, 8V
-55°C ~ 175°C (TJ)
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
DMP4016SSS-13
Diodes Incorporated

MOSFET BVDSS: 31V~40V SO-8 T&R 2

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W
  • Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
Paket: -
Request a Quote
MOSFET (Metal Oxide)
40 V
10.8A (Ta)
4.5V, 10V
2.5V @ 250µA
112 nC @ 10 V
5697 pF @ 20 V
±20V
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1.6W
11mOhm @ 9.8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
APT5020BVFRG
Microchip Technology

MOSFET N-CH 500V 26A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 200mOhm @ 500mA, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 [B]
  • Package / Case: TO-247-3
Paket: -
Lager2.544
MOSFET (Metal Oxide)
500 V
26A (Tc)
-
4V @ 1mA
225 nC @ 10 V
4440 pF @ 25 V
-
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200mOhm @ 500mA, 10V
-
Through Hole
TO-247 [B]
TO-247-3
IRF9Z10PBF-BE3
Vishay Siliconix

MOSFET P-CH 60V 6.7A TO220AB

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 43W (Tc)
  • Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paket: -
Lager486
MOSFET (Metal Oxide)
60 V
6.7A (Tc)
-
4V @ 250µA
12 nC @ 10 V
270 pF @ 25 V
±20V
-
43W (Tc)
500mOhm @ 4A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
RQ7G080ATTCR
Rohm Semiconductor

PCH -40V -8A SMALL SIGNAL POWER

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 18.2mOhm @ 8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT8
  • Package / Case: 8-SMD, Flat Lead
Paket: -
Lager13.065
MOSFET (Metal Oxide)
40 V
8A (Ta)
4.5V, 10V
2.5V @ 1mA
37 nC @ 10 V
2060 pF @ 20 V
±20V
-
1.1W (Ta)
18.2mOhm @ 8A, 10V
150°C (TJ)
Surface Mount
TSMT8
8-SMD, Flat Lead