Bild |
Teilenummer |
Hersteller |
Beschreibung |
Paket |
Lager |
Anzahl |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Infineon Technologies |
MOSFET N-CH 40V 375A DIRECTFET
|
Paket: DirectFET? Isometric L8 |
Lager5.520 |
|
MOSFET (Metal Oxide) | 40V | 46A (Ta), 375A (Tc) | 10V | 4V @ 250µA | 330nC @ 10V | 11880pF @ 25V | ±20V | - | 3.8W (Ta), 125W (Tc) | 1 mOhm @ 160A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET L8 | DirectFET? Isometric L8 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 60V 25A DPAK
|
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager5.440 |
|
MOSFET (Metal Oxide) | 60V | 5.2A (Ta), 25A (Tc) | 5V, 10V | 3V @ 250µA | 11nC @ 5V | 880pF @ 25V | ±20V | - | 55W (Tc) | 36 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 8V 1.34A SOT563F
|
Paket: SOT-563, SOT-666 |
Lager65.280 |
|
MOSFET (Metal Oxide) | 8V | 1.34A (Ta) | 1.5V, 4.5V | 900mV @ 250µA | 11.6nC @ 5V | 585pF @ 4V | ±5V | - | 236mW (Ta) | 86 mOhm @ 1.34A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SC-89-6 | SOT-563, SOT-666 |
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IXYS |
MOSFET N-CH 1000V 38A SOT-227
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Paket: SOT-227-4, miniBLOC |
Lager7.168 |
|
MOSFET (Metal Oxide) | 1000V | 38A | 10V | 5V @ 8mA | 250nC @ 10V | 7200pF @ 25V | ±30V | - | 890W (Tc) | 250 mOhm @ 19A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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ON Semiconductor |
MOSFET N-CH 60V 27A TO220AB
|
Paket: TO-220-3 |
Lager4.896 |
|
MOSFET (Metal Oxide) | 60V | 27A (Ta) | 10V | 4V @ 250µA | 30nC @ 10V | 1015pF @ 25V | ±20V | - | 88.2W (Tc) | 46 mOhm @ 13.5A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia USA Inc. |
MOSFET N-CH 75V 75A TO220AB
|
Paket: TO-220-3 |
Lager5.360 |
|
MOSFET (Metal Oxide) | 75V | 75A (Tc) | 10V | 4V @ 1mA | 40nC @ 10V | 2644pF @ 25V | ±20V | - | 157W (Tc) | 13 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 900V 5.7A TO-247
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Paket: TO-247-3 |
Lager6.432 |
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MOSFET (Metal Oxide) | 900V | 5.7A (Tc) | 10V | 3.5V @ 370µA | 34nC @ 10V | 850pF @ 100V | ±20V | - | 89W (Tc) | 1 Ohm @ 3.3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 1200V 0.2A TO-220
|
Paket: TO-220-3 |
Lager4.576 |
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MOSFET (Metal Oxide) | 1200V | 200mA (Tc) | 10V | 4V @ 100µA | 4.7nC @ 10V | 104pF @ 25V | ±20V | - | 33W (Tc) | 75 Ohm @ 100mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 40V 120A SO8FL
|
Paket: 8-PowerTDFN |
Lager7.968 |
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MOSFET (Metal Oxide) | 40V | 21A (Ta) | 4.5V, 10V | 2.4V @ 250µA | 51nC @ 10V | 2700pF @ 25V | ±20V | - | 3.7W (Ta), 127W (Tc) | 4.2 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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Rohm Semiconductor |
MOSFET N-CH 50V 0.2A EMT3
|
Paket: SC-75, SOT-416 |
Lager36.000 |
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MOSFET (Metal Oxide) | 50V | 200mA (Ta) | 1.2V, 4.5V | 1V @ 1mA | - | 25pF @ 10V | ±8V | - | 150mW (Ta) | 2.2 Ohm @ 200mA, 4.5V | 150°C (TJ) | Surface Mount | EMT3 | SC-75, SOT-416 |
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TSC America Inc. |
MOSFET, SINGLE, P-CHANNEL, -60V,
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Paket: TO-236-3, SC-59, SOT-23-3 |
Lager6.304 |
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MOSFET (Metal Oxide) | 60V | 3.1A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 8.2nC @ 10V | 425pF @ 30V | ±20V | - | 1.56W (Tc) | 190 mOhm @ 3A, 10V | 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Texas Instruments |
40V N-CHANNEL NEXFET POWER MOSF
|
Paket: 8-PowerTDFN |
Lager3.840 |
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MOSFET (Metal Oxide) | 40V | 100A | 4.5V, 10V | 2.45V @ 250µA | 63nC @ 10V | 5850pF @ 10V | ±20V | - | 3.1W (Ta) | 3.5 mOhm @ 24A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 20V 25A TO-252
|
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager55.908 |
|
MOSFET (Metal Oxide) | 20V | 25A (Tc) | 2.5V, 10V | 2V @ 250µA | 18nC @ 10V | 900pF @ 10V | ±16V | - | 2.1W (Ta), 33.3W (Tc) | 21 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
N-CHANNEL 900 V, 0.60 OHM TYP.,
|
Paket: TO-220-3 Full Pack |
Lager7.280 |
|
MOSFET (Metal Oxide) | 900V | 8A | 10V | 5V @ 100µA | - | - | ±30V | Current Sensing | - | - | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Fairchild/ON Semiconductor |
MOSFET N-CH 30V 92A TO-220AB
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Paket: TO-220-3 |
Lager173.016 |
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MOSFET (Metal Oxide) | 30V | 16A (Ta), 92A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 67nC @ 10V | 2525pF @ 15V | ±20V | - | 80W (Tc) | 5.9 mOhm @ 35A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 150V 117A D2PAK
|
Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Lager7.568 |
|
MOSFET (Metal Oxide) | 150V | 117A (Tc) | 10V | 4V @ 250µA | 84nC @ 10V | 6040pF @ 25V | ±20V | - | 294W (Tc) | 8.2 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 950V 17.5A TO-247
|
Paket: TO-247-3 |
Lager16.320 |
|
MOSFET (Metal Oxide) | 950V | 17.5A (Tc) | 10V | 5V @ 100µA | 40nC @ 10V | 1500pF @ 100V | ±30V | - | 250W (Tc) | 330 mOhm @ 9A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 20V 1.2A SOT-23-3
|
Paket: TO-236-3, SC-59, SOT-23-3 |
Lager910.800 |
|
MOSFET (Metal Oxide) | 20V | 1.2A (Ta) | 2.7V, 4.5V | 700mV @ 250µA | 3.9nC @ 4.5V | 110pF @ 15V | ±12V | - | 540mW (Ta) | 250 mOhm @ 930mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | Micro3?/SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET P-CH 100V 13.2A 1212-8
|
Paket: PowerPAK? 1212-8 |
Lager3.808 |
|
MOSFET (Metal Oxide) | 100V | 13.2A (Tc) | 4.5V, 10V | 3V @ 250µA | 55nC @ 10V | 1480pF @ 50V | ±20V | - | 3.7W (Ta), 52W (Tc) | 134 mOhm @ 4A, 10V | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK? 1212-8 | PowerPAK? 1212-8 |
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Diodes Incorporated |
MOSFET BVDSS: 8V~24V SO-8 T&R 2.
|
Paket: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 12 V | 8.5A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 31 nC @ 8 V | 1344 pF @ 10 V | ±8V | - | 1.3W (Ta) | 13.5mOhm @ 9A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Renesas Electronics Corporation |
N-CHANNEL POWER MOSFET
|
Paket: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Nexperia USA Inc. |
PSMN4R2-30MLD/SOT1210/MLFPAK
|
Paket: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 70A (Ta) | 4.5V, 10V | 2.2V @ 1mA | 29.3 nC @ 10 V | 1795 pF @ 15 V | ±20V | Schottky Diode (Body) | 65W (Ta) | 4.3mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK33 | SOT-1210, 8-LFPAK33 (5-Lead) |
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onsemi |
PCH 1.8V DRIVE SERIES
|
Paket: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Goford Semiconductor |
N30V,RD(MAX)<22M@10V,RD(MAX)<35M
|
Paket: - |
Lager44.991 |
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MOSFET (Metal Oxide) | 30 V | 5.6A (Tc) | 4.5V, 10V | 2V @ 250µA | 12.2 nC @ 10 V | 526 pF @ 15 V | ±20V | - | 1.2W (Tc) | 22mOhm @ 4.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Taiwan Semiconductor Corporation |
500V, 5A, SINGLE N-CHANNEL POWER
|
Paket: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 500 V | 5A (Tc) | 10V | 4.5V @ 250µA | 15 nC @ 10 V | 586 pF @ 50 V | ±30V | - | 40W (Tc) | 1.38Ohm @ 1.7A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ITO-220S | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 100V 9.3A PQFN56
|
Paket: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 9.3A (Ta), 46A (Tc) | - | 4.9V @ 100µA | 36 nC @ 10 V | 1510 pF @ 50 V | - | - | - | 18mOhm @ 9.3A, 10V | - | Surface Mount | PQFN (5x6) Single Die | 8-PowerVDFN |
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Diotec Semiconductor |
IC
|
Paket: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 12A (Tc) | 10V | 4V @ 250µA | 45 nC @ 10 V | 1479 pF @ 34 V | ±30V | - | 125W (Tc) | 190mOhm @ 40A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Diodes Incorporated |
MOSFET BVDSS: 61V~100V POWERDI50
|
Paket: - |
Lager5.622 |
|
MOSFET (Metal Oxide) | 80 V | 100A (Tc) | 4.5V, 10V | 2.8V @ 1mA | 45.3 nC @ 10 V | 2682 pF @ 40 V | ±20V | - | 1.5W (Ta), 104W (Tc) | 6.5mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Surface Mount, Wettable Flank | PowerDI5060-8 (Type UX) | 8-PowerTDFN |
||
Renesas Electronics Corporation |
N-CHANNEL POWER SWITCHING MOSFET
|
Paket: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
onsemi |
SICFET N-CH 1200V 17A TO247-3
|
Paket: - |
Lager1.095 |
|
SiCFET (Silicon Carbide) | 1200 V | 17A (Tc) | 20V | 4.3V @ 2.5mA | 34 nC @ 20 V | 665 pF @ 800 V | +25V, -15V | - | 119W (Tc) | 224mOhm @ 12A, 20V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |