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Transistoren - FETs, MOSFET - Einzeln

Aufzeichnungen 42.029
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Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IRF7739L2TR1PBF
Infineon Technologies

MOSFET N-CH 40V 375A DIRECTFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 375A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 11880pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 1 mOhm @ 160A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET L8
  • Package / Case: DirectFET? Isometric L8
Paket: DirectFET? Isometric L8
Lager5.520
MOSFET (Metal Oxide)
40V
46A (Ta), 375A (Tc)
10V
4V @ 250µA
330nC @ 10V
11880pF @ 25V
±20V
-
3.8W (Ta), 125W (Tc)
1 mOhm @ 160A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DIRECTFET L8
DirectFET? Isometric L8
FDD45AN06LA0_F085
Fairchild/ON Semiconductor

MOSFET N-CH 60V 25A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 55W (Tc)
  • Rds On (Max) @ Id, Vgs: 36 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63
Lager5.440
MOSFET (Metal Oxide)
60V
5.2A (Ta), 25A (Tc)
5V, 10V
3V @ 250µA
11nC @ 5V
880pF @ 25V
±20V
-
55W (Tc)
36 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
hot SI1050X-T1-E3
Vishay Siliconix

MOSFET N-CH 8V 1.34A SOT563F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: 1.34A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.6nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 585pF @ 4V
  • Vgs (Max): ±5V
  • FET Feature: -
  • Power Dissipation (Max): 236mW (Ta)
  • Rds On (Max) @ Id, Vgs: 86 mOhm @ 1.34A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-89-6
  • Package / Case: SOT-563, SOT-666
Paket: SOT-563, SOT-666
Lager65.280
MOSFET (Metal Oxide)
8V
1.34A (Ta)
1.5V, 4.5V
900mV @ 250µA
11.6nC @ 5V
585pF @ 4V
±5V
-
236mW (Ta)
86 mOhm @ 1.34A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SC-89-6
SOT-563, SOT-666
IXFN38N100Q2
IXYS

MOSFET N-CH 1000V 38A SOT-227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 38A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 890W (Tc)
  • Rds On (Max) @ Id, Vgs: 250 mOhm @ 19A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227B
  • Package / Case: SOT-227-4, miniBLOC
Paket: SOT-227-4, miniBLOC
Lager7.168
MOSFET (Metal Oxide)
1000V
38A
10V
5V @ 8mA
250nC @ 10V
7200pF @ 25V
±30V
-
890W (Tc)
250 mOhm @ 19A, 10V
-55°C ~ 150°C (TJ)
Chassis Mount
SOT-227B
SOT-227-4, miniBLOC
NTP27N06
ON Semiconductor

MOSFET N-CH 60V 27A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 27A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1015pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 88.2W (Tc)
  • Rds On (Max) @ Id, Vgs: 46 mOhm @ 13.5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paket: TO-220-3
Lager4.896
MOSFET (Metal Oxide)
60V
27A (Ta)
10V
4V @ 250µA
30nC @ 10V
1015pF @ 25V
±20V
-
88.2W (Tc)
46 mOhm @ 13.5A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
BUK7513-75B,127
Nexperia USA Inc.

MOSFET N-CH 75V 75A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2644pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 157W (Tc)
  • Rds On (Max) @ Id, Vgs: 13 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paket: TO-220-3
Lager5.360
MOSFET (Metal Oxide)
75V
75A (Tc)
10V
4V @ 1mA
40nC @ 10V
2644pF @ 25V
±20V
-
157W (Tc)
13 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
IPW90R1K0C3FKSA1
Infineon Technologies

MOSFET N-CH 900V 5.7A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 370µA
  • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 89W (Tc)
  • Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-3
  • Package / Case: TO-247-3
Paket: TO-247-3
Lager6.432
MOSFET (Metal Oxide)
900V
5.7A (Tc)
10V
3.5V @ 370µA
34nC @ 10V
850pF @ 100V
±20V
-
89W (Tc)
1 Ohm @ 3.3A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-3
TO-247-3
IXTP02N120P
IXYS

MOSFET N-CH 1200V 0.2A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 104pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 33W (Tc)
  • Rds On (Max) @ Id, Vgs: 75 Ohm @ 100mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paket: TO-220-3
Lager4.576
MOSFET (Metal Oxide)
1200V
200mA (Tc)
10V
4V @ 100µA
4.7nC @ 10V
104pF @ 25V
±20V
-
33W (Tc)
75 Ohm @ 100mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
NVMFS5832NLWFT3G
ON Semiconductor

MOSFET N-CH 40V 120A SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 127W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN
Paket: 8-PowerTDFN
Lager7.968
MOSFET (Metal Oxide)
40V
21A (Ta)
4.5V, 10V
2.4V @ 250µA
51nC @ 10V
2700pF @ 25V
±20V
-
3.7W (Ta), 127W (Tc)
4.2 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN
hot RUE002N05TL
Rohm Semiconductor

MOSFET N-CH 50V 0.2A EMT3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: EMT3
  • Package / Case: SC-75, SOT-416
Paket: SC-75, SOT-416
Lager36.000
MOSFET (Metal Oxide)
50V
200mA (Ta)
1.2V, 4.5V
1V @ 1mA
-
25pF @ 10V
±8V
-
150mW (Ta)
2.2 Ohm @ 200mA, 4.5V
150°C (TJ)
Surface Mount
EMT3
SC-75, SOT-416
TSM2309CX RFG
TSC America Inc.

MOSFET, SINGLE, P-CHANNEL, -60V,

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.56W (Tc)
  • Rds On (Max) @ Id, Vgs: 190 mOhm @ 3A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Paket: TO-236-3, SC-59, SOT-23-3
Lager6.304
MOSFET (Metal Oxide)
60V
3.1A (Tc)
4.5V, 10V
2.5V @ 250µA
8.2nC @ 10V
425pF @ 30V
±20V
-
1.56W (Tc)
190 mOhm @ 3A, 10V
150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
CSD18511Q5AT
Texas Instruments

40V N-CHANNEL NEXFET POWER MOSF

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 100A
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.45V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5850pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 24A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-VSONP (5x6)
  • Package / Case: 8-PowerTDFN
Paket: 8-PowerTDFN
Lager3.840
MOSFET (Metal Oxide)
40V
100A
4.5V, 10V
2.45V @ 250µA
63nC @ 10V
5850pF @ 10V
±20V
-
3.1W (Ta)
3.5 mOhm @ 24A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
8-VSONP (5x6)
8-PowerTDFN
hot AOD476
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 20V 25A TO-252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta), 33.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 21 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63
Lager55.908
MOSFET (Metal Oxide)
20V
25A (Tc)
2.5V, 10V
2V @ 250µA
18nC @ 10V
900pF @ 10V
±16V
-
2.1W (Ta), 33.3W (Tc)
21 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
STF8N90K5
STMicroelectronics

N-CHANNEL 900 V, 0.60 OHM TYP.,

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±30V
  • FET Feature: Current Sensing
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
Paket: TO-220-3 Full Pack
Lager7.280
MOSFET (Metal Oxide)
900V
8A
10V
5V @ 100µA
-
-
±30V
Current Sensing
-
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
hot FDP8896
Fairchild/ON Semiconductor

MOSFET N-CH 30V 92A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 92A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2525pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 80W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 35A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paket: TO-220-3
Lager173.016
MOSFET (Metal Oxide)
30V
16A (Ta), 92A (Tc)
4.5V, 10V
2.5V @ 250µA
67nC @ 10V
2525pF @ 15V
±20V
-
80W (Tc)
5.9 mOhm @ 35A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
FDB082N15A
Fairchild/ON Semiconductor

MOSFET N-CH 150V 117A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 117A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 294W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263AB)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Lager7.568
MOSFET (Metal Oxide)
150V
117A (Tc)
10V
4V @ 250µA
84nC @ 10V
6040pF @ 25V
±20V
-
294W (Tc)
8.2 mOhm @ 75A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK (TO-263AB)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STWA20N95K5
STMicroelectronics

MOSFET N-CH 950V 17.5A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 950V
  • Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 330 mOhm @ 9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
Paket: TO-247-3
Lager16.320
MOSFET (Metal Oxide)
950V
17.5A (Tc)
10V
5V @ 100µA
40nC @ 10V
1500pF @ 100V
±30V
-
250W (Tc)
330 mOhm @ 9A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247
TO-247-3
hot IRLML2402GTRPBF
Infineon Technologies

MOSFET N-CH 20V 1.2A SOT-23-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 540mW (Ta)
  • Rds On (Max) @ Id, Vgs: 250 mOhm @ 930mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Micro3?/SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Paket: TO-236-3, SC-59, SOT-23-3
Lager910.800
MOSFET (Metal Oxide)
20V
1.2A (Ta)
2.7V, 4.5V
700mV @ 250µA
3.9nC @ 4.5V
110pF @ 15V
±12V
-
540mW (Ta)
250 mOhm @ 930mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
Micro3?/SOT-23
TO-236-3, SC-59, SOT-23-3
hot SI7113DN-T1-GE3
Vishay Siliconix

MOSFET P-CH 100V 13.2A 1212-8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 13.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
  • Rds On (Max) @ Id, Vgs: 134 mOhm @ 4A, 10V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? 1212-8
  • Package / Case: PowerPAK? 1212-8
Paket: PowerPAK? 1212-8
Lager3.808
MOSFET (Metal Oxide)
100V
13.2A (Tc)
4.5V, 10V
3V @ 250µA
55nC @ 10V
1480pF @ 50V
±20V
-
3.7W (Ta), 52W (Tc)
134 mOhm @ 4A, 10V
-50°C ~ 150°C (TJ)
Surface Mount
PowerPAK? 1212-8
PowerPAK? 1212-8
DMP1012USSQ-13
Diodes Incorporated

MOSFET BVDSS: 8V~24V SO-8 T&R 2.

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12 V
  • Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 8 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1344 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta)
  • Rds On (Max) @ Id, Vgs: 13.5mOhm @ 9A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
Paket: -
Request a Quote
MOSFET (Metal Oxide)
12 V
8.5A (Ta)
1.8V, 4.5V
1V @ 250µA
31 nC @ 8 V
1344 pF @ 10 V
±8V
-
1.3W (Ta)
13.5mOhm @ 9A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
2SK3287ANTL-E
Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
Paket: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
PSMN4R2-30MLD-2X
Nexperia USA Inc.

PSMN4R2-30MLD/SOT1210/MLFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 29.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1795 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: Schottky Diode (Body)
  • Power Dissipation (Max): 65W (Ta)
  • Rds On (Max) @ Id, Vgs: 4.3mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK33
  • Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Paket: -
Request a Quote
MOSFET (Metal Oxide)
30 V
70A (Ta)
4.5V, 10V
2.2V @ 1mA
29.3 nC @ 10 V
1795 pF @ 15 V
±20V
Schottky Diode (Body)
65W (Ta)
4.3mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
LFPAK33
SOT-1210, 8-LFPAK33 (5-Lead)
MCH6307-G-TL-E
onsemi

PCH 1.8V DRIVE SERIES

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
Paket: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
G3404B
Goford Semiconductor

N30V,RD(MAX)<22M@10V,RD(MAX)<35M

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 526 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Tc)
  • Rds On (Max) @ Id, Vgs: 22mOhm @ 4.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Paket: -
Lager44.991
MOSFET (Metal Oxide)
30 V
5.6A (Tc)
4.5V, 10V
2V @ 250µA
12.2 nC @ 10 V
526 pF @ 15 V
±20V
-
1.2W (Tc)
22mOhm @ 4.2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
TSM5NC50CF
Taiwan Semiconductor Corporation

500V, 5A, SINGLE N-CHANNEL POWER

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 586 pF @ 50 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.38Ohm @ 1.7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: ITO-220S
  • Package / Case: TO-220-3 Full Pack
Paket: -
Request a Quote
MOSFET (Metal Oxide)
500 V
5A (Tc)
10V
4.5V @ 250µA
15 nC @ 10 V
586 pF @ 50 V
±30V
-
40W (Tc)
1.38Ohm @ 1.7A, 10V
-55°C ~ 150°C (TJ)
Through Hole
ITO-220S
TO-220-3 Full Pack
IRFH5053TR2PBF
Infineon Technologies

MOSFET N-CH 100V 9.3A PQFN56

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 46A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4.9V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 50 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 18mOhm @ 9.3A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: PQFN (5x6) Single Die
  • Package / Case: 8-PowerVDFN
Paket: -
Request a Quote
MOSFET (Metal Oxide)
100 V
9.3A (Ta), 46A (Tc)
-
4.9V @ 100µA
36 nC @ 10 V
1510 pF @ 50 V
-
-
-
18mOhm @ 9.3A, 10V
-
Surface Mount
PQFN (5x6) Single Die
8-PowerVDFN
DIW012N65
Diotec Semiconductor

IC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1479 pF @ 34 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 190mOhm @ 40A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
Paket: -
Request a Quote
MOSFET (Metal Oxide)
650 V
12A (Tc)
10V
4V @ 250µA
45 nC @ 10 V
1479 pF @ 34 V
±30V
-
125W (Tc)
190mOhm @ 40A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247
TO-247-3
DMT8007LPSW-13
Diodes Incorporated

MOSFET BVDSS: 61V~100V POWERDI50

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 45.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2682 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta), 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI5060-8 (Type UX)
  • Package / Case: 8-PowerTDFN
Paket: -
Lager5.622
MOSFET (Metal Oxide)
80 V
100A (Tc)
4.5V, 10V
2.8V @ 1mA
45.3 nC @ 10 V
2682 pF @ 40 V
±20V
-
1.5W (Ta), 104W (Tc)
6.5mOhm @ 14A, 10V
-55°C ~ 150°C (TJ)
Surface Mount, Wettable Flank
PowerDI5060-8 (Type UX)
8-PowerTDFN
RJK03K6DPA-00-J5A
Renesas Electronics Corporation

N-CHANNEL POWER SWITCHING MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
Paket: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
NTHL160N120SC1
onsemi

SICFET N-CH 1200V 17A TO247-3

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 4.3V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 800 V
  • Vgs (Max): +25V, -15V
  • FET Feature: -
  • Power Dissipation (Max): 119W (Tc)
  • Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
Paket: -
Lager1.095
SiCFET (Silicon Carbide)
1200 V
17A (Tc)
20V
4.3V @ 2.5mA
34 nC @ 20 V
665 pF @ 800 V
+25V, -15V
-
119W (Tc)
224mOhm @ 12A, 20V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3