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Transistoren - FETs, MOSFET - Einzeln

Aufzeichnungen 42.029
Page  762/1.401
Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IPI45N06S409AKSA1
Infineon Technologies

MOSFET N-CH 60V 45A TO262-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 34µA
  • Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3785pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 71W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 45A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO262-3
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
Paket: TO-262-3 Long Leads, I2Pak, TO-262AA
Lager5.520
MOSFET (Metal Oxide)
60V
45A (Tc)
10V
4V @ 34µA
47nC @ 10V
3785pF @ 25V
±20V
-
71W (Tc)
9.4 mOhm @ 45A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO262-3
TO-262-3 Long Leads, I2Pak, TO-262AA
IRLR8103TR
Infineon Technologies

MOSFET N-CH 30V 89A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 89A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 89W (Tc)
  • Rds On (Max) @ Id, Vgs: 7 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63
Lager7.552
MOSFET (Metal Oxide)
30V
89A (Ta)
4.5V, 10V
2V @ 250µA (Min)
50nC @ 5V
-
±20V
-
89W (Tc)
7 mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
PHB108NQ03LT,118
NXP

MOSFET N-CH 25V 75A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 16.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1375pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 187W (Tc)
  • Rds On (Max) @ Id, Vgs: 6 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Lager4.512
MOSFET (Metal Oxide)
25V
75A (Tc)
5V, 10V
2V @ 1mA
16.3nC @ 4.5V
1375pF @ 12V
±20V
-
187W (Tc)
6 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQPF14N30
Fairchild/ON Semiconductor

MOSFET N-CH 300V 8.5A TO-220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 290 mOhm @ 4.25A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
Paket: TO-220-3 Full Pack
Lager2.976
MOSFET (Metal Oxide)
300V
8.5A (Tc)
10V
5V @ 250µA
40nC @ 10V
1360pF @ 25V
±30V
-
50W (Tc)
290 mOhm @ 4.25A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
hot SFP9634
Fairchild/ON Semiconductor

MOSFET P-CH 250V 5A TO-220

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 70W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 2.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
Paket: TO-220-3
Lager537.648
MOSFET (Metal Oxide)
250V
5A (Tc)
10V
4V @ 250µA
37nC @ 10V
975pF @ 25V
±30V
-
70W (Tc)
1.3 Ohm @ 2.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
2SK3566(STA4,Q,M)
Toshiba Semiconductor and Storage

MOSFET N-CH 900V 2.5A TO-220SIS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.4 Ohm @ 1.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
Paket: TO-220-3 Full Pack
Lager7.680
MOSFET (Metal Oxide)
900V
2.5A (Ta)
10V
4V @ 1mA
12nC @ 10V
470pF @ 25V
±30V
-
40W (Tc)
6.4 Ohm @ 1.5A, 10V
150°C (TJ)
Through Hole
TO-220SIS
TO-220-3 Full Pack
hot SI3460DV-T1-GE3
Vishay Siliconix

MOSFET N-CH 20V 5.1A 6TSOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 450mV @ 1mA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 27 mOhm @ 5.1A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
Paket: SOT-23-6 Thin, TSOT-23-6
Lager522.240
MOSFET (Metal Oxide)
20V
5.1A (Ta)
1.8V, 4.5V
450mV @ 1mA (Min)
20nC @ 4.5V
-
±8V
-
1.1W (Ta)
27 mOhm @ 5.1A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
6-TSOP
SOT-23-6 Thin, TSOT-23-6
ZXMN2F30FHQTA
Diodes Incorporated

MOSFET BVDSS: 8V 24V SOT23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 452pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.4W
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 2.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Paket: TO-236-3, SC-59, SOT-23-3
Lager3.424
MOSFET (Metal Oxide)
20V
4.9A (Ta)
2.5V, 4.5V
1.5V @ 250µA
4.8nC @ 10V
452pF @ 10V
±12V
-
1.4W
45 mOhm @ 2.5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
FQPF47P06YDTU
Fairchild/ON Semiconductor

MOSFET P-CH 60V 30A TO-220F

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 62W (Tc)
  • Rds On (Max) @ Id, Vgs: 26 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F-3 (Y-Forming)
  • Package / Case: TO-220-3 Full Pack, Formed Leads
Paket: TO-220-3 Full Pack, Formed Leads
Lager7.692
MOSFET (Metal Oxide)
60V
30A (Tc)
10V
4V @ 250µA
110nC @ 10V
3600pF @ 25V
±25V
-
62W (Tc)
26 mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220F-3 (Y-Forming)
TO-220-3 Full Pack, Formed Leads
hot FDPF10N60ZUT
Fairchild/ON Semiconductor

MOSFET N-CH 600V TO-220F-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1980pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 800 mOhm @ 4.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
Paket: TO-220-3 Full Pack
Lager8.868
MOSFET (Metal Oxide)
600V
9A (Tc)
10V
5V @ 250µA
40nC @ 10V
1980pF @ 25V
±30V
-
42W (Tc)
800 mOhm @ 4.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
STF7N90K5
STMicroelectronics

N-CHANNEL 800 V, 0.5 OHM TYP., 7

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 7A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±30V
  • FET Feature: Current Sensing
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
Paket: TO-220-3 Full Pack
Lager7.152
MOSFET (Metal Oxide)
900V
7A
10V
5V @ 100µA
-
-
±30V
Current Sensing
-
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
hot SIHP15N60E-GE3
Vishay Siliconix

MOSFET N-CH 600V 15A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 180W (Tc)
  • Rds On (Max) @ Id, Vgs: 280 mOhm @ 8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paket: TO-220-3
Lager16.872
MOSFET (Metal Oxide)
600V
15A (Tc)
10V
4V @ 250µA
78nC @ 10V
1350pF @ 100V
±30V
-
180W (Tc)
280 mOhm @ 8A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot SI4776DY-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 11.9A 8SO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 11.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 521pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 4.1W (Tc)
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TA)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager594.936
MOSFET (Metal Oxide)
30V
11.9A (Tc)
4.5V, 10V
2.3V @ 1mA
17.5nC @ 10V
521pF @ 15V
±20V
-
4.1W (Tc)
16 mOhm @ 10A, 10V
-55°C ~ 150°C (TA)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
FDP65N06
Fairchild/ON Semiconductor

MOSFET N-CH 60V 65A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2170pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 135W (Tc)
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 32.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
Paket: TO-220-3
Lager17.544
MOSFET (Metal Oxide)
60V
65A (Tc)
10V
4V @ 250µA
43nC @ 10V
2170pF @ 25V
±20V
-
135W (Tc)
16 mOhm @ 32.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
hot IPW60R041C6
Infineon Technologies

MOSFET N-CH 600V 77.5A TO 247-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 77.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 2.96mA
  • Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6530pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 481W (Tc)
  • Rds On (Max) @ Id, Vgs: 41 mOhm @ 44.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-3
  • Package / Case: TO-247-3
Paket: TO-247-3
Lager156.504
MOSFET (Metal Oxide)
600V
77.5A (Tc)
10V
3.5V @ 2.96mA
290nC @ 10V
6530pF @ 10V
±20V
-
481W (Tc)
41 mOhm @ 44.4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-3
TO-247-3
BSC057N08NS3GATMA1
Infineon Technologies

MOSFET N-CH 80V 100A TDSON-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 73µA
  • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 40V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 114W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8
  • Package / Case: 8-PowerTDFN
Paket: 8-PowerTDFN
Lager290.142
MOSFET (Metal Oxide)
80V
16A (Ta), 100A (Tc)
6V, 10V
3.5V @ 73µA
56nC @ 10V
3900pF @ 40V
±20V
-
2.5W (Ta), 114W (Tc)
5.7 mOhm @ 50A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8
8-PowerTDFN
BSH202,215
Nexperia USA Inc.

MOSFET P-CH 30V 520MA SOT23

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 520mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1.9V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 24V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 417mW (Ta)
  • Rds On (Max) @ Id, Vgs: 900 mOhm @ 280mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-236AB (SOT23)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Paket: TO-236-3, SC-59, SOT-23-3
Lager154.974
MOSFET (Metal Oxide)
30V
520mA (Ta)
4.5V, 10V
1.9V @ 1mA
2.9nC @ 10V
80pF @ 24V
±20V
-
417mW (Ta)
900 mOhm @ 280mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-236AB (SOT23)
TO-236-3, SC-59, SOT-23-3
STP315N10F7
STMicroelectronics

MOSFET N-CH 100V 180A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 12800pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 315W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 60A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
Paket: TO-220-3
Lager20.616
MOSFET (Metal Oxide)
100V
180A (Tc)
10V
4.5V @ 250µA
180nC @ 10V
12800pF @ 25V
±20V
-
315W (Tc)
2.7 mOhm @ 60A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220
TO-220-3
DMP31D7LT-13
Diodes Incorporated

MOSFET BVDSS: 25V~30V SOT523 T&R

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 260mW (Ta)
  • Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-523
  • Package / Case: SOT-523
Paket: -
Request a Quote
MOSFET (Metal Oxide)
30 V
360mA (Ta)
4.5V, 10V
2.6V @ 250µA
0.36 nC @ 4.5 V
19 pF @ 15 V
±20V
-
260mW (Ta)
900mOhm @ 420mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-523
SOT-523
RF1S640SM
Harris Corporation

MOSFET N-CH 200V 18A TO263AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1275 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263AB
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Paket: -
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MOSFET (Metal Oxide)
200 V
18A (Tc)
-
4V @ 250µA
64 nC @ 10 V
1275 pF @ 25 V
±20V
-
125W (Tc)
180mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-263AB
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
STL18N60M6
STMicroelectronics

MOSFET N-CH 600V 9A POWERFLAT HV

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 57W (Tc)
  • Rds On (Max) @ Id, Vgs: 308mOhm @ 6.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerFlat™ (5x6) HV
  • Package / Case: 8-PowerVDFN
Paket: -
Request a Quote
MOSFET (Metal Oxide)
600 V
9A (Tc)
10V
4.75V @ 250µA
16.8 nC @ 10 V
650 pF @ 100 V
±25V
-
57W (Tc)
308mOhm @ 6.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerFlat™ (5x6) HV
8-PowerVDFN
HUF76409D3
Fairchild Semiconductor

N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 25 V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 49W (Tc)
  • Rds On (Max) @ Id, Vgs: 63mOhm @ 18A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: IPAK
  • Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA
Paket: -
Request a Quote
MOSFET (Metal Oxide)
60 V
18A (Tc)
4.5V, 10V
3V @ 250µA
15 nC @ 10 V
485 pF @ 25 V
±16V
-
49W (Tc)
63mOhm @ 18A, 10V
-55°C ~ 175°C (TJ)
Through Hole
IPAK
TO-251-3 Short Leads, IPAK, TO-251AA
FDWS9509L-F085
onsemi

MOSFET P-CH 40V 65A 8DFN

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 20 V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 107W (Tj)
  • Rds On (Max) @ Id, Vgs: 8mOhm @ 65A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DFN (5.1x6.3)
  • Package / Case: 8-PowerTDFN
Paket: -
Request a Quote
MOSFET (Metal Oxide)
40 V
65A (Tc)
4.5V, 10V
3V @ 250µA
67 nC @ 10 V
3360 pF @ 20 V
±16V
-
107W (Tj)
8mOhm @ 65A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-DFN (5.1x6.3)
8-PowerTDFN
MCU50P06Y-TP
Micro Commercial Co

P-CHANNEL MOSFET,DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4260 pF @ 30 V
  • Vgs (Max): ±18V
  • FET Feature: -
  • Power Dissipation (Max): 89W
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Paket: -
Lager10.083
MOSFET (Metal Oxide)
60 V
50A (Tc)
4.5V, 10V
3V @ 250µA
79 nC @ 10 V
4260 pF @ 30 V
±18V
-
89W
12mOhm @ 25A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
RFD20N03SM
Harris Corporation

N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 90W (Tc)
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Paket: -
Request a Quote
MOSFET (Metal Oxide)
30 V
20A (Tc)
10V
4V @ 250µA
75 nC @ 20 V
1150 pF @ 25 V
±20V
-
90W (Tc)
25mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
IPN60R1K0PFD7SATMA1
Infineon Technologies

CONSUMER PG-SOT223-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 6W (Tc)
  • Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT223-4
  • Package / Case: TO-261-4, TO-261AA
Paket: -
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MOSFET (Metal Oxide)
600 V
4.7A (Tc)
10V
4.5V @ 50µA
6 nC @ 10 V
230 pF @ 400 V
±20V
-
6W (Tc)
1Ohm @ 1A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
PG-SOT223-4
TO-261-4, TO-261AA
SSM3K16FV-L3F
Toshiba Semiconductor and Storage

PB-F VESM S-MOS (LF) TRANSISTOR

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
  • Vgs(th) (Max) @ Id: 1.1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: VESM
  • Package / Case: SOT-723
Paket: -
Lager26.736
MOSFET (Metal Oxide)
20 V
100mA (Ta)
1.5V, 4V
1.1V @ 100µA
-
9.3 pF @ 3 V
±10V
-
150mW (Ta)
3Ohm @ 10mA, 4V
150°C
Surface Mount
VESM
SOT-723
DMP510DLQ-13
Diodes Incorporated

MOSFET BVDSS: 41V~60V SOT23 T&R

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50 V
  • Current - Continuous Drain (Id) @ 25°C: 196mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 520mW (Ta)
  • Rds On (Max) @ Id, Vgs: 9.5Ohm @ 100mA, 5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Paket: -
Request a Quote
MOSFET (Metal Oxide)
50 V
196mA (Ta)
5V
2V @ 1mA
0.5 nC @ 10 V
40 pF @ 25 V
±30V
-
520mW (Ta)
9.5Ohm @ 100mA, 5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
IXTP12N65X2M
IXYS

MOSFET N-CH 650V 12A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220 Isolated Tab
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
Paket: -
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MOSFET (Metal Oxide)
650 V
12A (Tc)
10V
4.5V @ 250µA
17.7 nC @ 10 V
1100 pF @ 25 V
±30V
-
40W (Tc)
300mOhm @ 6A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220 Isolated Tab
TO-220-3 Full Pack, Isolated Tab
SM2321PSAC-TRG-ML
MOSLEADER

P -30V -4.3A SOT-23

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
Paket: -
Request a Quote
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