Bild |
Teilenummer |
Hersteller |
Beschreibung |
Paket |
Lager |
Anzahl |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 650V 15A TO-262
|
Paket: TO-262-3 Long Leads, I2Pak, TO-262AA |
Lager4.592 |
|
MOSFET (Metal Oxide) | 650V | 15A (Tc) | 10V | 3.9V @ 675µA | 63nC @ 10V | 1660pF @ 25V | ±20V | - | 156W (Tc) | 280 mOhm @ 9.4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 150V 1.9A 8-SOIC
|
Paket: 8-SOIC (0.154", 3.90mm Width) |
Lager42.540 |
|
MOSFET (Metal Oxide) | 150V | 1.9A (Ta) | 10V | 5.5V @ 250µA | 15nC @ 10V | 330pF @ 25V | ±30V | - | 2.5W (Ta) | 280 mOhm @ 1.14A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 200V 16A TO-262
|
Paket: TO-262-3 Long Leads, I2Pak, TO-262AA |
Lager3.712 |
|
MOSFET (Metal Oxide) | 200V | 16A (Tc) | 10V | 5.5V @ 250µA | 50nC @ 10V | 1100pF @ 25V | ±30V | - | 3.8W (Ta), 140W (Tc) | 170 mOhm @ 9.8A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Microsemi Corporation |
MOSFET N-CH 100V 34A SMD1
|
Paket: TO-267AB |
Lager7.904 |
|
MOSFET (Metal Oxide) | 100V | 34A (Tc) | 10V | 4V @ 250µA | 125nC @ 10V | - | ±20V | - | 4W (Ta), 150W (Tc) | 81 mOhm @ 34A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-267AB | TO-267AB |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 50A TO-220AB
|
Paket: TO-220-3 |
Lager3.552 |
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MOSFET (Metal Oxide) | 60V | 50A | - | - | 54nC @ 10V | - | - | - | - | 8.5 mOhm @ 25A, 10V | - | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 30V 5A 8WDFN
|
Paket: 8-PowerWDFN |
Lager72.012 |
|
MOSFET (Metal Oxide) | 30V | 5A (Ta), 32A (Tc) | 4.5V, 11.5V | 3V @ 250µA | 16.6nC @ 10V | 964pF @ 15V | ±20V | - | 860mW (Ta), 33.8W (Tc) | 20 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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Vishay Siliconix |
MOSFET N-CH 40V 110A D2PAK
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Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Lager18.600 |
|
MOSFET (Metal Oxide) | 40V | 110A (Tc) | 4.5V, 10V | 3V @ 250µA | 360nC @ 10V | 13600pF @ 25V | ±20V | - | 3.75W (Ta), 375W (Tc) | 2.3 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 75V 220A TO-247
|
Paket: TO-247-3 |
Lager2.400 |
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MOSFET (Metal Oxide) | 75V | 220A (Tc) | 10V | 4V @ 250µA | 165nC @ 10V | 7700pF @ 25V | ±20V | - | 480W (Tc) | 4.5 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 100V 6.7A 8-SOIC
|
Paket: 8-SOIC (0.154", 3.90mm Width) |
Lager5.088 |
|
MOSFET (Metal Oxide) | 100V | 6.7A (Ta) | 6V, 10V | 4V @ 250µA | 77nC @ 10V | 2714pF @ 50V | ±20V | - | 3W (Ta) | 26 mOhm @ 6.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET P-CH 100V 5.6A I-PAK
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Paket: TO-251-3 Short Leads, IPak, TO-251AA |
Lager42.600 |
|
MOSFET (Metal Oxide) | 100V | 5.6A (Tc) | 10V | 4V @ 250µA | 18nC @ 10V | 390pF @ 25V | ±20V | - | 2.5W (Ta), 42W (Tc) | 600 mOhm @ 3.4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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IXYS |
MOSFET N-CH 200V 170A PLUS247
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Paket: TO-247-3 |
Lager5.328 |
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MOSFET (Metal Oxide) | 200V | 170A (Tc) | 10V | 5V @ 4mA | 265nC @ 10V | 19600pF @ 25V | ±20V | - | 1150W (Tc) | 11 mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PLUS247?-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 30V 11A 8-SOIC
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Paket: 8-SOIC (0.154", 3.90mm Width) |
Lager3.680 |
|
MOSFET (Metal Oxide) | 30V | - | 4.5V, 10V | 800mV @ 250µA (Min) | 20nC @ 5V | - | ±25V | - | 2.5W (Ta) | 12 mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 30V 6.5A PPAK 1212-8
|
Paket: PowerPAK? 1212-8 |
Lager1.157.052 |
|
MOSFET (Metal Oxide) | 30V | 6.5A (Ta) | 4.5V, 10V | 1.8V @ 250µA | 13nC @ 5V | - | ±25V | - | 1.5W (Ta) | 19.5 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? 1212-8 | PowerPAK? 1212-8 |
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ON Semiconductor |
MOSFET N-CH 30V 116A SO8FL
|
Paket: 8-PowerTDFN |
Lager2.832 |
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MOSFET (Metal Oxide) | 30V | 24.7A (Ta), 116A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 30nC @ 10V | 1972pF @ 15V | ±20V | - | 3.61W (Ta), 79W (Tc) | 3.4 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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Nexperia USA Inc. |
MOSFET P-CH 12V 8.2A 6DFN
|
Paket: 6-UDFN Exposed Pad |
Lager5.904 |
|
MOSFET (Metal Oxide) | 12V | 8.2A (Ta) | 1.8V, 4.5V | 900mV @ 250µA | 100nC @ 4.5V | 2875pF @ 6V | ±12V | - | 1.7W (Ta), 12.5W (Tc) | 19 mOhm @ 8.2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-DFN2020MD (2x2) | 6-UDFN Exposed Pad |
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Nexperia USA Inc. |
MOSFET N-CH 30V 70A LFPAK33
|
Paket: SOT-1210, 8-LFPAK33 (5-Lead) |
Lager5.664 |
|
MOSFET (Metal Oxide) | 30V | 70A (Tc) | 4.5V, 10V | 2.15V @ 1mA | 23nC @ 10V | 1515pF @ 15V | ±20V | - | 69W (Tc) | 4.65 Ohm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK33 | SOT-1210, 8-LFPAK33 (5-Lead) |
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Rohm Semiconductor |
MOSFET N-CH 250V 8A TO220
|
Paket: TO-220-2 Full Pack |
Lager90.000 |
|
MOSFET (Metal Oxide) | 250V | 8A (Tc) | 10V | 5V @ 1mA | 15nC @ 10V | 840pF @ 25V | ±30V | - | 2.23W (Ta), 35W (Tc) | 600 mOhm @ 4A, 10V | 150°C (TJ) | Through Hole | TO-220FM | TO-220-2 Full Pack |
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STMicroelectronics |
N-CHANNEL 900 V, 0.24 OHM TYP.,
|
Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Lager6.256 |
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MOSFET (Metal Oxide) | 900V | 20A | 10V | 5V @ 100µA | 40nC @ 10V | 1500pF @ 100V | ±30V | Current Sensing | 250W (Tc) | 250 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK (TO-263) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Diodes Incorporated |
MOSFET N-CH 100V 1.7A SOT223
|
Paket: TO-261-4, TO-261AA |
Lager152.256 |
|
MOSFET (Metal Oxide) | 100V | 1.7A (Ta) | 6V, 10V | 4V @ 250µA | 5.4nC @ 10V | 274pF @ 50V | ±20V | - | 2W (Ta) | 350 mOhm @ 2.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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STMicroelectronics |
MOSFET N-CH 600V 17A I2PAK FP
|
Paket: TO-262-3 Full Pack, I2Pak |
Lager23.940 |
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MOSFET (Metal Oxide) | 600V | 17A (Tc) | 10V | 4V @ 250µA | 46nC @ 10V | 1400pF @ 50V | ±30V | - | 30W (Tc) | 190 mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I2PAKFP (TO-281) | TO-262-3 Full Pack, I2Pak |
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Infineon Technologies |
MOSFET N-CH 55V 131A D2PAK
|
Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Lager88.464 |
|
MOSFET (Metal Oxide) | 55V | 131A (Tc) | 10V | 4V @ 250µA | 260nC @ 10V | 5480pF @ 25V | ±20V | - | 200W (Tc) | 5.3 mOhm @ 101A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 600V 4.8A TO220FP
|
Paket: TO-220-3 Full Pack |
Lager134.304 |
|
MOSFET (Metal Oxide) | 600V | 4.8A (Tc) | 10V | 4.5V @ 50µA | 29nC @ 10V | 640pF @ 25V | ±30V | - | 30W (Tc) | 2 Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Diodes Incorporated |
MOSFET N-CH 100V 230MA SOT23
|
Paket: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 230mA (Ta) | 4.5V, 10V | 2V @ 1mA | 1.3 nC @ 10 V | 38 pF @ 50 V | ±20V | - | 500mW | 6Ohm @ 170mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Microchip Technology |
MOSFET N-CH 600V 77A D3PAK
|
Paket: - |
Lager771 |
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MOSFET (Metal Oxide) | 600 V | 77A (Tc) | 10V | 3.6V @ 2.96mA | 260 nC @ 10 V | 13600 pF @ 25 V | ±20V | - | 481W (Tc) | 41mOhm @ 44.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D3PAK | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
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Rohm Semiconductor |
SICFET N-CH 650V 29A TO263-7
|
Paket: - |
Lager2.757 |
|
SiCFET (Silicon Carbide) | 650 V | 29A (Tc) | - | 5.6V @ 5mA | 48 nC @ 18 V | 571 pF @ 500 V | +22V, -4V | - | 125W | 104mOhm @ 10A, 18V | 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
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STMicroelectronics |
N-CHANNEL 650 V, 33 MOHM TYP., 7
|
Paket: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 75A (Tc) | 10V | 4.75V @ 250µA | 118 nC @ 10 V | 5700 pF @ 100 V | ±25V | - | 480W (Tc) | 36mOhm @ 37.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4 | TO-247-4 |
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YAGEO XSEMI |
MOSFET P-CH 40V 60A TO252
|
Paket: - |
Lager2.991 |
|
MOSFET (Metal Oxide) | 40 V | 60A (Tc) | 4.5V, 10V | 3V @ 250µA | 70 nC @ 4.5 V | 5050 pF @ 25 V | ±20V | - | 69W (Tc) | 12.3mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Panjit International Inc. |
60V N-CHANNEL ENHANCEMENT MODE M
|
Paket: - |
Lager390 |
|
MOSFET (Metal Oxide) | 60 V | 250mA (Ta) | 5V, 10V | 3V @ 250µA | 1.3 nC @ 4.5 V | 22 pF @ 25 V | ±20V | - | 350mW (Ta) | 5Ohm @ 300mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |
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Rohm Semiconductor |
MOSFET N-CH 650V 9A LPTS
|
Paket: - |
Lager264 |
|
MOSFET (Metal Oxide) | 650 V | 9A (Tc) | 10V | 4V @ 230µA | 24 nC @ 10 V | 430 pF @ 25 V | ±20V | - | 94W (Tc) | 585mOhm @ 2.8A, 10V | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
NCH 30V 4.5A POWER MOSFET: RW4E0
|
Paket: - |
Lager7.356 |
|
MOSFET (Metal Oxide) | 30 V | 4.5A (Ta) | 2.5V, 4.5V | 1.5V @ 1mA | 4 nC @ 4.5 V | 450 pF @ 15 V | ±12V | - | 1.5W (Ta) | 40mOhm @ 4.5A, 4.5V | 150°C (TJ) | Surface Mount | DFN1616-7T | 6-PowerUFDFN |