Bild |
Teilenummer |
Hersteller |
Beschreibung |
Paket |
Lager |
Anzahl |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET COOL MOS SAWED WAFER
|
Paket: - |
Lager2.560 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET P-CH 30V 22A DIRECTFET
|
Paket: DirectFET? Isometric MX |
Lager2.432 |
|
MOSFET (Metal Oxide) | 30V | 22A (Ta), 160A (Tc) | 4.5V, 10V | 2.4V @ 150µA | 130nC @ 10V | 7305pF @ 15V | ±20V | - | 2.1W (Ta), 113W (Tc) | 2.9 mOhm @ 22A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET? MX | DirectFET? Isometric MX |
||
Infineon Technologies |
MOSFET N-CH 60V 2.9A SOT-223
|
Paket: TO-261-4, TO-261AA |
Lager3.200 |
|
MOSFET (Metal Oxide) | 60V | 2.9A (Ta) | 10V | 4V @ 20µA | 12nC @ 10V | 340pF @ 25V | ±20V | - | 1.8W (Ta) | 120 mOhm @ 2.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
||
Infineon Technologies |
MOSFET N-CH 600V 120MA SOT-223
|
Paket: TO-261-4, TO-261AA |
Lager3.488 |
|
MOSFET (Metal Oxide) | 600V | 120mA (Ta) | 4.5V, 10V | 2.3V @ 94µA | 6.6nC @ 10V | 150pF @ 25V | ±20V | - | 1.8W (Ta) | 45 Ohm @ 120mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
||
Renesas Electronics America |
MOSFET N-CH 600V 10A LDPAK
|
Paket: SC-83 |
Lager7.840 |
|
MOSFET (Metal Oxide) | 600V | 10A (Ta) | 10V | - | 28nC @ 10V | 1050pF @ 25V | ±30V | - | 100W (Tc) | 1.1 Ohm @ 5A, 10V | 150°C (TJ) | Surface Mount | 4-LDPAK | SC-83 |
||
IXYS |
MOSFET N-CH 1000V 15A PLUS220
|
Paket: TO-220-3, Short Tab |
Lager3.232 |
|
MOSFET (Metal Oxide) | 1000V | 15A (Tc) | 10V | 6.5V @ 1mA | 97nC @ 10V | 5140pF @ 25V | ±30V | - | 543W (Tc) | 760 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | PLUS220 | TO-220-3, Short Tab |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 80V 9.3A D2PAK
|
Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Lager3.936 |
|
MOSFET (Metal Oxide) | 80V | 9.3A (Tc) | 10V | 4V @ 250µA | 7.7nC @ 10V | 250pF @ 25V | ±25V | - | 3.75W (Ta), 40W (Tc) | 210 mOhm @ 4.65A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 100V BARE DIE
|
Paket: Die |
Lager6.560 |
|
MOSFET (Metal Oxide) | 100V | 1A (Tj) | 10V | 3.5V @ 302µA | - | - | - | - | - | 100 mOhm @ 2A, 10V | - | Surface Mount | Sawn on foil | Die |
||
Infineon Technologies |
MOSFET N-CH 75V BARE DIE
|
Paket: Die |
Lager5.600 |
|
MOSFET (Metal Oxide) | 75V | 1A (Tj) | 10V | 3.8V @ 270µA | - | - | - | - | - | 100 mOhm @ 2A, 10V | - | Surface Mount | Sawn on foil | Die |
||
Infineon Technologies |
MOSFET N-CH TO252-3
|
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager5.648 |
|
MOSFET (Metal Oxide) | 250V | 5A (Tc) | 10V | 4V @ 13µA | 6.2nC @ 10V | 422pF @ 25V | ±20V | - | 41W (Tc) | 430 mOhm @ 5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Microsemi Corporation |
MOSFET N-CH 900V 59A SP1
|
Paket: SP1 |
Lager5.920 |
|
MOSFET (Metal Oxide) | 900V | 59A | 10V | 3.5V @ 6mA | 540nC @ 10V | 13600pF @ 100V | ±20V | Super Junction | 462W (Tc) | 60 mOhm @ 52A, 10V | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
||
Nexperia USA Inc. |
MOSFET N-CH 30V 120A D2PAK
|
Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Lager3.776 |
|
MOSFET (Metal Oxide) | 30V | 120A (Tc) | 4.5V, 10V | 2.8V @ 1mA | 168nC @ 10V | 10918pF @ 25V | ±16V | - | 263W (Tc) | 1.9 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
ON Semiconductor |
MOSFET N-CH 40V SO8FL
|
Paket: 8-PowerTDFN |
Lager7.360 |
|
MOSFET (Metal Oxide) | 40V | - | 4.5V, 10V | 2V @ 250µA | 7.3nC @ 10V | 570pF @ 25V | ±20V | - | 3.5W (Ta), 28W (Tc) | 10.3 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
||
Nexperia USA Inc. |
MOSFET N-CH 100V TO220AB
|
Paket: TO-220-3 |
Lager6.852 |
|
MOSFET (Metal Oxide) | 100V | 120A (Tj) | 10V | 4V @ 1mA | 278nC @ 10V | 14400pF @ 50V | ±20V | - | 405W (Tc) | 5 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Diodes Incorporated |
MOSFET N-CH 60V 100A TO220-3
|
Paket: TO-220-3 |
Lager4.304 |
|
MOSFET (Metal Oxide) | 60V | 100A (Tc) | 10V | 4V @ 250µA | 95.4nC @ 10V | 4556pF @ 30V | ±20V | - | 2.3W (Ta), 113W (Tc) | 3.65 mOhm @ 100A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
STMicroelectronics |
MOSFET N-CH 30V 80A IPAK
|
Paket: TO-251-3 Short Leads, IPak, TO-251AA |
Lager14.748 |
|
MOSFET (Metal Oxide) | 30V | 80A (Tc) | 5V, 10V | 2.5V @ 250µA | 14nC @ 5V | 1850pF @ 25V | ±22V | - | 70W (Tc) | 5.4 mOhm @ 40A, 10V | 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
Central Semiconductor Corp |
MOSFET N-CH 30V 11A 8SOIC
|
Paket: 8-SOIC (0.154", 3.90mm Width) |
Lager5.472 |
|
MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 3V @ 250µA | 6.3nC @ 5V | 860pF @ 15V | 20V | - | 2.5W (Ta) | 20 mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
||
Toshiba Semiconductor and Storage |
MOSFET N CH 30V 32A 8SOP
|
Paket: 8-PowerVDFN |
Lager28.476 |
|
MOSFET (Metal Oxide) | 30V | 32A (Ta) | 4.5V, 10V | 2.3V @ 100µA | 7.5nC @ 10V | 660pF @ 15V | ±20V | - | 1.6W (Ta), 21W (Tc) | 11 mOhm @ 5.5A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
||
Diodes Incorporated |
MOSFET P-CH 20V 4A SOT-23
|
Paket: TO-236-3, SC-59, SOT-23-3 |
Lager518.592 |
|
MOSFET (Metal Oxide) | 20V | 4A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 9.1nC @ 4.5V | 294pF @ 10V | ±8V | - | 900mW (Ta) | 39 mOhm @ 4A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
||
Micro Commercial Co |
N-CHANNEL MOSFET SOT-23
|
Paket: - |
Lager9.984 |
|
MOSFET (Metal Oxide) | 60 V | 115mA | 4.5V, 10V | 2.5V @ 250µA | - | 50 pF @ 25 V | ±30V | - | 300mW | 3Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
Nexperia USA Inc. |
PSMN1R9-40YSB/SOT669/LFPAK
|
Paket: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 200A (Ta) | 10V | 3.6V @ 1mA | 78 nC @ 10 V | 6297 pF @ 20 V | ±20V | Schottky Diode (Body) | 194W (Ta) | 1.9mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
||
Rohm Semiconductor |
1200V, 43A, 3-PIN THD, TRENCH-ST
|
Paket: - |
Request a Quote |
|
SiCFET (Silicon Carbide) | 1200 V | 43A (Tc) | 18V | 4.8V @ 11.1mA | 91 nC @ 18 V | 2335 pF @ 800 V | +21V, -4V | - | 176W | 47mOhm @ 21A, 18V | 175°C (TJ) | Through Hole | TO-247N | TO-247-3 |
||
EPC Space, LLC |
GAN FET HEMT 40V 8A 4FSMD-A
|
Paket: - |
Request a Quote |
|
GaNFET (Gallium Nitride) | 40 V | 8A (Tc) | 5V | 2.5V @ 2mA | 2.8 nC @ 5 V | 312 pF @ 20 V | +6V, -4V | - | - | 24mOhm @ 8A, 5V | -55°C ~ 150°C (TJ) | Surface Mount | 4-SMD | 4-SMD, No Lead |
||
Texas Instruments |
PROTOTYPE
|
Paket: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 25 V | 50A (Tc) | 4.5V, 10V | 2.3V @ 250µA | 3.8 nC @ 4.5 V | 570 pF @ 12.5 V | +16V, -12V | - | 35W (Tc) | 10mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON-CLIP (3.3x3.3) | 8-PowerTDFN |
||
Renesas Electronics Corporation |
N-CHANNEL POWER MOSFET
|
Paket: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Microchip Technology |
MOSFET SIC 1700 V 750 MOHM D2PAK
|
Paket: - |
Request a Quote |
|
SiCFET (Silicon Carbide) | 1700 V | 6A (Tc) | 20V | 3.25V @ 100µA (Typ) | 11 nC @ 20 V | 184 pF @ 1000 V | +23V, -10V | - | 63W (Tc) | 940mOhm @ 2.5A, 20V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK-7 | TO-263-8, DPak (7 Leads + Tab) |
||
STMicroelectronics |
MOSFET N-CH 600V TO220
|
Paket: - |
Lager1.869 |
|
MOSFET (Metal Oxide) | 600 V | 17A (Tj) | 10V | 4.75V @ 250µA | 23 nC @ 10 V | 960 pF @ 100 V | ±25V | - | 130W (Tc) | 190mOhm @ 8.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Taiwan Semiconductor Corporation |
600V, 9.5A, SINGLE N-CHANNEL POW
|
Paket: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 9.5A (Tc) | 10V | 4V @ 250µA | 19.4 nC @ 10 V | 795 pF @ 100 V | ±30V | - | 83W (Tc) | 380mOhm @ 2.85A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |