Bild |
Teilenummer |
Hersteller |
Beschreibung |
Paket |
Lager |
Anzahl |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 100V 170MA SOT-23
|
Paket: TO-236-3, SC-59, SOT-23-3 |
Lager7.616 |
|
MOSFET (Metal Oxide) | 100V | 170mA (Ta) | 4.5V, 10V | 1.8V @ 50µA | 2.67nC @ 10V | 69pF @ 25V | ±20V | - | 360mW (Ta) | 6 Ohm @ 170mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 60V 45A TO263-3
|
Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Lager2.928 |
|
MOSFET (Metal Oxide) | 60V | 45A (Tc) | 10V | 4V @ 34µA | 47nC @ 10V | 3785pF @ 25V | ±20V | - | 71W (Tc) | 9.1 mOhm @ 45A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 40V 120A TO263-3
|
Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Lager48.000 |
|
MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 4V @ 230µA | 210nC @ 10V | 14300pF @ 25V | ±20V | - | 300W (Tc) | 2 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 30A TO-220
|
Paket: TO-220-3 |
Lager5.696 |
|
MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 2V @ 20µA | 10nC @ 5V | 1355pF @ 15V | ±20V | - | 52W (Tc) | 12.8 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 80A TO-262
|
Paket: TO-262-3 Long Leads, I2Pak, TO-262AA |
Lager7.936 |
|
MOSFET (Metal Oxide) | 55V | 80A (Tc) | 5V, 10V | 2.2V @ 55µA | 134nC @ 10V | 6475pF @ 25V | ±16V | - | 105W (Tc) | 7.9 mOhm @ 43A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 30V 11A 8-SOIC
|
Paket: 8-SOIC (0.154", 3.90mm Width) |
Lager39.084 |
|
MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 3V @ 250µA | 23nC @ 4.5V | 2100pF @ 15V | ±20V | - | 2.5W (Ta) | 12.5 mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET P-CH 60V 12A IPAK
|
Paket: TO-251-3 Short Leads, IPak, TO-251AA |
Lager3.536 |
|
MOSFET (Metal Oxide) | 60V | 12A (Ta) | 4V, 10V | 2.6V @ 1mA | 26nC @ 10V | 1150pF @ 20V | ±20V | - | 15W (Tc) | 62 mOhm @ 6A, 10V | 150°C (TJ) | Through Hole | IPAK/TP | TO-251-3 Short Leads, IPak, TO-251AA |
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Alpha & Omega Semiconductor Inc. |
MOSFET P-CH 30V 10.5A 8SOIC
|
Paket: 8-SOIC (0.154", 3.90mm Width) |
Lager4.432 |
|
MOSFET (Metal Oxide) | 30V | 10.5A (Ta) | 5V, 20V | 3V @ 250µA | 24nC @ 10V | 1400pF @ 15V | ±25V | - | 3.1W (Ta) | 14 mOhm @ 11A, 20V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Microsemi Corporation |
MOSFET N-CH 100V 38A TO-204AE
|
Paket: TO-204AE |
Lager6.992 |
|
MOSFET (Metal Oxide) | 100V | 38A (Tc) | 10V | 4V @ 250µA | 125nC @ 10V | - | ±20V | - | 4W (Ta), 150W (Tc) | 65 mOhm @ 38A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3 | TO-204AE |
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IXYS |
MOSFET N-CH 300V 24A ISOPLUS220
|
Paket: ISOPLUS220? |
Lager5.808 |
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MOSFET (Metal Oxide) | 300V | 24A (Tc) | 10V | 5V @ 4mA | 110nC @ 10V | 3490pF @ 25V | ±20V | - | 100W (Tc) | 75 mOhm @ 26A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS220? | ISOPLUS220? |
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Microsemi Corporation |
MOSFET N-CH 800V 42A SOT-227
|
Paket: SOT-227-4, miniBLOC |
Lager5.088 |
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MOSFET (Metal Oxide) | 800V | 42A | 10V | 5V @ 5mA | 285nC @ 10V | 7238pF @ 25V | ±30V | - | 595W (Tc) | 140 mOhm @ 21A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP? | SOT-227-4, miniBLOC |
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Fairchild/ON Semiconductor |
MOSFET P-CH 500V 1.2A DPAK
|
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager3.472 |
|
MOSFET (Metal Oxide) | 500V | 1.2A (Tc) | 10V | 5V @ 250µA | 14nC @ 10V | 350pF @ 25V | ±30V | - | 2.5W (Ta), 38W (Tc) | 10.5 Ohm @ 600mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 60V 36A D-PAK
|
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager335.316 |
|
MOSFET (Metal Oxide) | 60V | 7A (Ta), 36A (Tc) | 10V | 4V @ 250µA | 17nC @ 10V | 800pF @ 25V | ±20V | - | 75W (Tc) | 26 mOhm @ 36A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 200V 1.9A DPAK
|
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager11.340 |
|
MOSFET (Metal Oxide) | 200V | 1.9A (Tc) | 10V | 4V @ 250µA | 8.9nC @ 10V | 170pF @ 25V | ±20V | - | 2.5W (Ta), 25W (Tc) | 3 Ohm @ 1.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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IXYS |
MOSFET P-CH 500V 11A TO-247AD
|
Paket: TO-247-3 |
Lager5.440 |
|
MOSFET (Metal Oxide) | 500V | 11A (Tc) | 10V | 5V @ 250µA | 130nC @ 10V | 4700pF @ 25V | ±20V | - | 300W (Tc) | 750 mOhm @ 5.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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ON Semiconductor |
MOSFET N-CH 100V 15A SO8FL
|
Paket: 8-PowerTDFN |
Lager3.232 |
|
MOSFET (Metal Oxide) | 100V | - | 10V | 4V @ 250µA | 20nC @ 10V | 1300pF @ 50V | ±16V | - | 3.8W (Ta), 94W (Tc) | 15 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET P-CH 30V DPAK
|
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager5.696 |
|
MOSFET (Metal Oxide) | 60V | 80A (Ta) | 4.5V, 10V | 2.6V @ 1mA | 115nC @ 10V | 5400pF @ 20V | ±20V | - | 84W (Tc) | 13 mOhm @ 35A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | ATPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Rohm Semiconductor |
MOSFET N-CH 45V 20A TCPT3
|
Paket: 3-SMD, Flat Leads |
Lager7.600 |
|
MOSFET (Metal Oxide) | 45V | 20A (Ta) | 4.5V, 10V | - | - | - | ±20V | - | 20W (Ta) | - | 150°C (TJ) | Surface Mount | TCPT3 | 3-SMD, Flat Leads |
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STMicroelectronics |
MOSFET N-CH 600V 5A DPAK
|
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager914.652 |
|
MOSFET (Metal Oxide) | 600V | 5A (Tc) | 10V | 4.5V @ 50µA | 34nC @ 10V | 690pF @ 25V | ±30V | - | 90W (Tc) | 1.6 Ohm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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IXYS |
MOSFET N-CH 2000V 1A TO-247HV
|
Paket: TO-247-3 Variant |
Lager6.144 |
|
MOSFET (Metal Oxide) | 2000V | 1A (Tc) | 10V | 4V @ 250µA | 23.5nC @ 10V | 646pF @ 25V | ±20V | - | 125W (Tc) | 40 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247HV | TO-247-3 Variant |
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Fairchild/ON Semiconductor |
MOSFET N-CH 30V 8-MLP
|
Paket: 8-PowerWDFN |
Lager1.421.784 |
|
MOSFET (Metal Oxide) | 30V | 13.3A (Ta), 16A (Tc) | 4.5V, 10V | 3V @ 250µA | 29nC @ 10V | 1680pF @ 15V | ±20V | - | 2.3W (Ta), 29W (Tc) | 8.5 mOhm @ 13.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (3.3x3.3) | 8-PowerWDFN |
||
STMicroelectronics |
MOSFET P-CH 30V 12A DPAK
|
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager120.012 |
|
MOSFET (Metal Oxide) | 30V | 12A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 12nC @ 4.5V | 1450pF @ 25V | ±20V | - | 40W (Tc) | 30 mOhm @ 6A, 10V | 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 120V 20A/129A
|
Paket: 8-PowerVDFN |
Lager7.552 |
|
MOSFET (Metal Oxide) | 120V | 20A (Ta), 129A (Tc) | 6V, 10V | 4V @ 250µA | 107nC @ 10V | 7850pF @ 60V | ±20V | - | 3.2W (Ta), 156W (Tc) | 4.14 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-Dual Cool?88 | 8-PowerVDFN |
||
STMicroelectronics |
MOSFET N-CH 650V 5A DPAK
|
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager6.944 |
|
MOSFET (Metal Oxide) | 650V | 5A (Tc) | 10V | 4V @ 250µA | 9nC @ 10V | 270pF @ 100V | ±25V | - | 60W (Tc) | 1.15 Ohm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 38.8A TO-3P
|
Paket: TO-3P-3, SC-65-3 |
Lager6.072 |
|
MOSFET (Metal Oxide) | 600V | 38.8A (Ta) | 10V | 3.7V @ 1.9mA | 110nC @ 10V | 4100pF @ 300V | ±30V | Super Junction | 270W (Tc) | 65 mOhm @ 19.4A, 10V | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
||
Rohm Semiconductor |
MOSFET N-CH 250V 5A TO220
|
Paket: TO-220-2 Full Pack |
Lager9.804 |
|
MOSFET (Metal Oxide) | 250V | 5A (Tc) | 10V | 5.5V @ 1mA | 8.5nC @ 10V | 350pF @ 25V | ±30V | - | 2.23W (Ta), 30W (Tc) | 1.36 Ohm @ 2.5A, 10V | 150°C (TJ) | Through Hole | TO-220FM | TO-220-2 Full Pack |
||
Diodes Incorporated |
MOSFET P-CH 60V TSOT26
|
Paket: SOT-23-6 Thin, TSOT-23-6 |
Lager4.080 |
|
MOSFET (Metal Oxide) | 60V | 7.3A (Tc) | 4.5V, 10V | 3V @ 250µA | 17.2nC @ 10V | 969pF @ 30V | ±20V | - | 1.2W (Ta) | 105 mOhm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TSOT-26 | SOT-23-6 Thin, TSOT-23-6 |
||
Vishay Siliconix |
MOSFET P-CH 12V 31A SC70-6
|
Paket: PowerPAK? SC-70-6 |
Lager22.356 |
|
MOSFET (Metal Oxide) | 12V | 31A (Tc) | 1.8V, 4.5V | 1V @ 250µA | 72nC @ 8V | 2520pF @ 6V | ±8V | - | 3.5W (Ta), 19W (Tc) | 13 mOhm @ 5A, 4.5V | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SC-70-6 Single | PowerPAK? SC-70-6 |
||
Infineon Technologies |
MOSFET P-CH 55V 42A TO-262
|
Paket: TO-262-3 Long Leads, I2Pak, TO-262AA |
Lager3.600 |
|
MOSFET (Metal Oxide) | 55V | 42A (Tc) | 10V | 4V @ 250µA | 180nC @ 10V | 3500pF @ 25V | ±20V | - | 170W (Tc) | 20 mOhm @ 42A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Diodes Incorporated |
MOSFET P-CH 20V 820MA SOT323
|
Paket: SC-70, SOT-323 |
Lager464.280 |
|
MOSFET (Metal Oxide) | 20V | 820mA (Ta) | 1.8V, 4.5V | 1V @ 250µA | 0.622nC @ 4.5V | 59.76pF @ 16V | ±6V | - | 310mW (Ta) | 750 mOhm @ 430mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |