Bild |
Teilenummer |
Hersteller |
Beschreibung |
Paket |
Lager |
Anzahl |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Infineon Technologies |
MOSFET 2N-CH 20V 10A/12A 8-SOIC
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Paket: 8-SOIC |
Lager3.456 |
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MOSFET (Metal Oxide) | 20V | 10A (Ta), 12A (Tc) | 10V | 2.55V @ 250µA | 11nC @ 4.5V | 900pF @ 10V | - | - | 2W | 13.4 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | - | 8-SOIC |
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Infineon Technologies |
MOSFET N-CH 650V 15A TO262-3
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Paket: TO-262-3 Long Leads, I2Pak, TO-262AA |
Lager7.568 |
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MOSFET (Metal Oxide) | 650V | 15A (Tc) | 10V | 3.9V @ 675µA | 63nC @ 10V | 1600pF @ 25V | ±20V | - | 156W (Tc) | 280 mOhm @ 9.4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 40V 104A TO-262
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Paket: TO-262-3 Long Leads, I2Pak, TO-262AA |
Lager3.168 |
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MOSFET (Metal Oxide) | 40V | 104A (Tc) | 4.5V, 10V | 1V @ 250µA | 68nC @ 4.5V | 3445pF @ 25V | ±16V | - | 2.4W (Ta), 167W (Tc) | 8 mOhm @ 62A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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ON Semiconductor |
MOSFET N-CH 28V 14A 8SO
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Paket: 8-SOIC (0.154", 3.90mm Width) |
Lager3.568 |
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- | - | - | - | - | - | - | - | - | - | - | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET P-CH 20V 5.3A 6-TSOP
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Paket: SOT-23-6 Thin, TSOT-23-6 |
Lager384.144 |
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MOSFET (Metal Oxide) | 20V | 5.3A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 32nC @ 4.5V | - | ±8V | - | 1.1W (Ta) | 27 mOhm @ 7A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
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Vishay Siliconix |
MOSFET P-CH 60V 2.2A 8-TSSOP
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Paket: 8-TSSOP (0.173", 4.40mm Width) |
Lager3.120 |
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MOSFET (Metal Oxide) | 60V | 2.2A (Ta) | 4.5V, 10V | 3V @ 250µA | 22nC @ 10V | - | ±20V | - | 1W (Ta) | 115 mOhm @ 2.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
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IXYS |
MOSFET N-CH 150V 160A TO-247
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Paket: TO-247-3 |
Lager423.696 |
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MOSFET (Metal Oxide) | 150V | 160A (Tc) | 10V | 5V @ 1mA | 160nC @ 10V | 8800pF @ 25V | ±30V | - | 830W (Tc) | 9.6 mOhm @ 500mA, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 30V 71A D2PAK
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Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Lager19.200 |
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MOSFET (Metal Oxide) | 30V | 71A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 45nC @ 10V | 1700pF @ 15V | ±20V | - | 70W (Tc) | 8.5 mOhm @ 40A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 60V 6.7A D2PAK
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Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Lager6.224 |
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MOSFET (Metal Oxide) | 60V | 6.7A (Tc) | 10V | 4V @ 250µA | 12nC @ 10V | 270pF @ 25V | ±20V | - | 3.7W (Ta), 43W (Tc) | 500 mOhm @ 4A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 650V TO-220-3
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Paket: TO-220-3 |
Lager3.392 |
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MOSFET (Metal Oxide) | 650V | 17.5A (Tc) | 10V | 4.5V @ 700µA | 68nC @ 10V | 1850pF @ 100V | ±20V | - | 151W (Tc) | 190 mOhm @ 7.3A, 10V | -40°C ~ 150°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 200V 21A TO-263
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Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Lager4.400 |
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MOSFET (Metal Oxide) | 200V | 21A (Tc) | 10V | 4V @ 1mA | - | 1900pF @ 25V | ±20V | - | 125W (Tc) | 130 mOhm @ 13.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Fairchild/ON Semiconductor |
MV8 40V NCH DUAL COOL POWERTRENC
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Paket: 8-PowerVDFN |
Lager4.320 |
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MOSFET (Metal Oxide) | 40V | 420A (Tc) | 6V, 10V | 4V @ 250µA | 338nC @ 10V | - | ±20V | - | 156W (Tc) | - | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (8x8) | 8-PowerVDFN |
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IXYS |
MOSFET N-CH 600V 10A TO-220
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Paket: TO-220-3 |
Lager4.864 |
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MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 5.5V @ 1mA | 32nC @ 10V | 1610pF @ 25V | ±30V | - | 200W (Tc) | 740 mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Diodes Incorporated |
MOSFET NCH 40V 13A POWERDI
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Paket: 8-PowerTDFN |
Lager3.248 |
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MOSFET (Metal Oxide) | 40V | 13A (Ta), 80A (Tc) | 10V | 4V @ 250µA | 25.5nC @ 10V | 1405pF @ 20V | ±20V | - | 1.5W (Ta), 100W (Tc) | 10 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CH 30V 16A 1212-8
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Paket: PowerPAK? 1212-8 |
Lager3.808 |
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MOSFET (Metal Oxide) | 30V | 16A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 39nC @ 10V | 1865pF @ 25V | ±20V | - | 62W (Tc) | 8.5 mOhm @ 16.4A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK? 1212-8 | PowerPAK? 1212-8 |
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Infineon Technologies |
MOSFET N-CH 40V 100A PQFN5X6
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Paket: 8-PowerVDFN |
Lager7.136 |
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MOSFET (Metal Oxide) | 40V | 100A (Tc) | 6V, 10V | 3.7V @ 150µA | 152nC @ 10V | 5406pF @ 25V | ±20V | - | 125W (Tc) | 1.7 mOhm @ 100A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
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Nexperia USA Inc. |
MOSFET P-CH 30V 2.4A 3DFN
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Paket: 3-XDFN Exposed Pad |
Lager5.696 |
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MOSFET (Metal Oxide) | 30V | 2.4A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 11nC @ 10V | 309pF @ 15V | ±20V | - | 400mW (Ta), 8.3W (Tc) | 120 mOhm @ 2.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DFN1010D-3 | 3-XDFN Exposed Pad |
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Fairchild/ON Semiconductor |
MOSFET P-CH 20V 8-SOIC
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Paket: 8-SOIC (0.154", 3.90mm Width) |
Lager3.216 |
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MOSFET (Metal Oxide) | 20V | 13.5A (Ta) | 1.8V, 4.5V | 1.5V @ 250µA | 120nC @ 4.5V | 8237pF @ 10V | ±8V | - | 2.5W (Ta) | 8.5 mOhm @ 13.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 60V 30A TO252
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Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager4.736 |
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MOSFET (Metal Oxide) | 60V | 6.5A (Ta), 30A (Tc) | 4.5V, 10V | 2.8V @ 250µA | 34nC @ 10V | 1900pF @ 30V | ±20V | - | 2.5W (Ta), 52W (Tc) | 24 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 200V 17A DPAK
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Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager14.988 |
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MOSFET (Metal Oxide) | 200V | 17A (Tc) | 10V | 5.5V @ 250µA | 41nC @ 10V | 910pF @ 25V | ±30V | - | 3W (Ta), 140W (Tc) | 165 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET N-CH 30V 7A POWERDI
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Paket: 8-PowerWDFN |
Lager22.926 |
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MOSFET (Metal Oxide) | 30V | 7A (Ta) | 4.5V, 10V | 2.4V @ 250µA | 17nC @ 10V | 478.9pF @ 15V | ±20V | - | 1W (Ta) | 23 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerWDFN |
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Infineon Technologies |
MOSFET N-CH 100V 80A TO263-3
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Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Lager17.958 |
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MOSFET (Metal Oxide) | 100V | 80A (Tc) | 6V, 10V | 3.5V @ 75µA | 55nC @ 10V | 3980pF @ 50V | ±20V | - | 125W (Tc) | 8.3 mOhm @ 73A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 600V 4.4A TO263
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Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Lager390.000 |
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MOSFET (Metal Oxide) | 600V | 4.4A (Tc) | 10V | 3.5V @ 130µA | 13nC @ 10V | 280pF @ 100V | ±20V | - | 37W (Tc) | 950 mOhm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
MOSFET P CH 30V 4A SOT-23F
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Paket: SOT-23-3 Flat Leads |
Lager209.658 |
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MOSFET (Metal Oxide) | 30V | 4A (Ta) | 4V, 10V | 2V @ 100µA | 5.9nC @ 10V | 280pF @ 15V | ±20V | - | 1W (Ta) | 71 mOhm @ 3A, 10V | 150°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Renesas |
HAT1044M-EL-E - SILICON P CHANNE
|
Paket: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 4.5A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 13 nC @ 10 V | 600 pF @ 10 V | ±20V | - | 1.05W (Ta) | 60mOhm @ 3A, 10V | 150°C | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
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Diodes Incorporated |
MOSFET BVDSS: 31V~40V POWERDI506
|
Paket: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 43.5A (Tc) | 10V | 4V @ 250µA | 10.6 nC @ 10 V | 805 pF @ 20 V | ±20V | - | 4W (Ta), 46.9W (Tc) | 14.8mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | PowerDI5060-8 (Type UX) | 8-PowerTDFN |
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onsemi |
N-CHANNEL POWER MOSFET
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Paket: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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onsemi |
MOSFET N-CH 60V 11A IPAK
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Paket: - |
Lager97.767 |
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MOSFET (Metal Oxide) | 60 V | 11A (Tc) | 5V, 10V | 2.5V @ 250µA | 6.4 nC @ 5 V | 350 pF @ 25 V | ±20V | - | 2.5W (Ta), 28W (Tc) | 115mOhm @ 5.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | IPAK | TO-251-3 Short Leads, IPAK, TO-251AA |
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Infineon Technologies |
HIGH POWER_NEW PG-HDSOP-22
|
Paket: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-HDSOP-22-1 | 22-PowerBSOP Module |
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Micro Commercial Co |
N-CHANNEL MOSFET,SOT-323
|
Paket: - |
Lager8.799 |
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MOSFET (Metal Oxide) | 50 V | 370mA | 2.5V, 10V | 1.5V @ 250µA | 1.5 nC @ 10 V | 58 pF @ 30 V | ±20V | - | 250mW (Ta) | 1.5Ohm @ 300mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |