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Infineon Technologies |
IGBT 600V 11A 63W D2PAK
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 11A
- Current - Collector Pulsed (Icm): 22A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
- Power - Max: 63W
- Switching Energy: 73µJ (on), 47µJ (off)
- Input Type: Standard
- Gate Charge: 12nC
- Td (on/off) @ 25°C: 22ns/100ns
- Test Condition: 400V, 4A, 100 Ohm, 15V
- Reverse Recovery Time (trr): 93ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
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Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Lager24.816 |
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Infineon Technologies |
MOSFET N-CH 60V 90A TO263-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 90µA
- Gate Charge (Qg) (Max) @ Vgs: 128nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 10400pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 90A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Lager6.768 |
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Infineon Technologies |
MOSFET N-CH 55V 80A I2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 93µA
- Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 158W (Tc)
- Rds On (Max) @ Id, Vgs: 11 mOhm @ 40A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3-1
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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Paket: TO-262-3 Long Leads, I2Pak, TO-262AA |
Lager2.608 |
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Infineon Technologies |
MOSFET P-CH 60V 9.7A DPAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 42W (Tc)
- Rds On (Max) @ Id, Vgs: 250 mOhm @ 6.8A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager696.804 |
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Infineon Technologies |
MOSFET N-CH 100V 1.1A SOT223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 400µA
- Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 364pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.79W (Ta)
- Rds On (Max) @ Id, Vgs: 700 mOhm @ 1.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223-4
- Package / Case: TO-261-4, TO-261AA
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Paket: TO-261-4, TO-261AA |
Lager4.176 |
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Infineon Technologies |
MOSFET N-CH 30V 38A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 68W (Tc)
- Rds On (Max) @ Id, Vgs: 26 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Lager10.356 |
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Infineon Technologies |
MOSFET N-CH 40V 315A DIRECTFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 130A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 194nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7471pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.3W (Ta), 94W (Tc)
- Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 109A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET L6
- Package / Case: DirectFET? Isometric L6
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Paket: DirectFET? Isometric L6 |
Lager3.968 |
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Infineon Technologies |
MOSFET N-CH 75V 80A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 7.4 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
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Paket: TO-220-3 |
Lager3.536 |
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Infineon Technologies |
MOSFET N-CH TDSON-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
- Vgs(th) (Max) @ Id: 4.6V @ 91µA
- Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2770pF @ 75V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 11 mOhm @ 38A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8
- Package / Case: 8-PowerTDFN
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Paket: 8-PowerTDFN |
Lager2.240 |
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Infineon Technologies |
MOSFET N-CH 40V 14A DIRECTFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 41W (Tc)
- Rds On (Max) @ Id, Vgs: 6.95 mOhm @ 33A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET? SC
- Package / Case: DirectFET? Isometric SC
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Paket: DirectFET? Isometric SC |
Lager3.312 |
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Infineon Technologies |
CONSUMER
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Paket: - |
Lager2.800 |
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Infineon Technologies |
MOSFET N-CH 200V 13A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Rds On (Max) @ Id, Vgs: 235 mOhm @ 8A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager103.044 |
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Infineon Technologies |
MOSFET N-CH 55V 5.1A SOT223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 57.5 mOhm @ 3.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
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Paket: TO-261-4, TO-261AA |
Lager1.393.404 |
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Infineon Technologies |
RF MOSFET LDMOS 28V H-37248-2
- Transistor Type: LDMOS
- Frequency: 420MHz ~ 500MHz
- Gain: 21dB
- Voltage - Test: 28V
- Current Rating: 1µA
- Noise Figure: -
- Current - Test: 900mA
- Power - Output: 150W
- Voltage - Rated: 65V
- Package / Case: 2-Flatpack, Fin Leads
- Supplier Device Package: H-37248-2
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Paket: 2-Flatpack, Fin Leads |
Lager6.832 |
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Infineon Technologies |
MOSFET 2P-CH 20V 5.7A 8SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5.7A
- Rds On (Max) @ Id, Vgs: 45 mOhm @ 5.7A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 40µA
- Gate Charge (Qg) (Max) @ Vgs: 23.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1013pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: P-DSO-8
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Paket: 8-SOIC (0.154", 3.90mm Width) |
Lager7.856 |
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Infineon Technologies |
DIODE GEN PURP 600V 19.3A TO263
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 19.3A (DC)
- Voltage - Forward (Vf) (Max) @ If: 2V @ 9A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75ns
- Current - Reverse Leakage @ Vr: 50µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-3
- Operating Temperature - Junction: -55°C ~ 175°C
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Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Lager2.672 |
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Infineon Technologies |
DIODE SCHOTTKY 650V 9A TO220-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 9A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 9A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 160µA @ 650V
- Capacitance @ Vr, F: 270pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: PG-TO220-2-1
- Operating Temperature - Junction: -55°C ~ 175°C
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Paket: TO-220-2 |
Lager3.312 |
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Infineon Technologies |
DIODE ARRAY SCHOTTKY 70V SOT23
- Diode Configuration: 1 Pair Common Anode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 70V
- Current - Average Rectified (Io) (per Diode): 70mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 100ps
- Current - Reverse Leakage @ Vr: 100nA @ 50V
- Operating Temperature - Junction: 150°C (Max)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3
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Paket: TO-236-3, SC-59, SOT-23-3 |
Lager6.864 |
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Infineon Technologies |
IC REG LINEAR 5V 400MA TO263-3
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 40V
- Voltage - Output (Min/Fixed): 5V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.5V @ 250mA
- Current - Output: 400mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 220µA ~ 30mA
- PSRR: 60dB (100Hz)
- Control Features: -
- Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
- Supplier Device Package: PG-TO263-3-1
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Paket: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA |
Lager46.800 |
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Infineon Technologies |
IC REG LINEAR 5V 400MA TO263-3
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 40V
- Voltage - Output (Min/Fixed): 5V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.5V @ 250mA
- Current - Output: 400mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 220µA ~ 30mA
- PSRR: 60dB (100Hz)
- Control Features: -
- Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
- Supplier Device Package: PG-TO263-3-1
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Paket: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA |
Lager3.680 |
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Infineon Technologies |
IC PFC
- Mode: Critical Conduction (CRM)
- Frequency - Switching: -
- Current - Startup: 50µA
- Voltage - Supply: 11.5 V ~ 20 V
- Operating Temperature: -25°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Paket: 8-SOIC (0.154", 3.90mm Width) |
Lager6.768 |
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Infineon Technologies |
IC DRIVER HALF-BRIDGE 8-SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2.5V
- Current - Peak Output (Source, Sink): 290mA, 600mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 200V
- Rise / Fall Time (Typ): 70ns, 30ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Paket: - |
Lager2.688 |
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Infineon Technologies |
IC DRIVER HALF-BRIDGE 24SSOP
- Output Configuration: Half Bridge (8)
- Applications: AC Motors, DC Motors, General Purpose
- Interface: SPI
- Load Type: Inductive
- Technology: Power MOSFET
- Rds On (Typ): 850 mOhm LS, 850 mOhm HS
- Current - Output / Channel: 500mA
- Current - Peak Output: 2A
- Voltage - Supply: 3 V ~ 5.5 V
- Voltage - Load: 5.5 V ~ 20 V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Features: -
- Fault Protection: Over Temperature, Short Circuit, UVLO
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Paket: - |
Lager4.624 |
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Infineon Technologies |
IC MCU 16BIT 160KB FLASH 48VQFN
- Core Processor: C166SV2
- Core Size: 16/32-Bit
- Speed: 66MHz
- Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, UART/USART
- Peripherals: I2S, POR, PWM, WDT
- Number of I/O: 33
- Program Memory Size: 160KB (160K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 12K x 8
- Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
- Data Converters: A/D 10x12b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: -
- Package / Case: 48-VFQFN Exposed Pad
- Supplier Device Package: PG-VQFN-48-54
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Paket: 48-VFQFN Exposed Pad |
Lager7.520 |
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Infineon Technologies |
IC MCU 16BIT 160KB FLASH 64LQFP
- Core Processor: C166SV2
- Core Size: 16-Bit
- Speed: 80MHz
- Connectivity: CAN, I2C, LIN, SPI, SSC, UART/USART, USI
- Peripherals: DMA, I2S, POR, PWM, WDT
- Number of I/O: 48
- Program Memory Size: 160KB (160K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 12K x 8
- Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
- Data Converters: A/D 19x12b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: 64-LQFP
- Supplier Device Package: PG-LQFP-64-22
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Paket: 64-LQFP |
Lager2.640 |
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Infineon Technologies |
SENSOR MAGNETIC ANGLE 5V TDSO16
- For Measuring: Angle
- Technology: Magnetoresistive
- Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
- Linear Range: -
- Output: Analog Voltage
- Output Signal: Cosine, Sine
- Actuator Type: External Magnet Not Included
- Linearity: -
- Resistance: -
- Resistance Tolerance: -
- Voltage - Supply: 4.5 V ~ 5.5 V
- Mounting Type: Surface Mount
- Termination Style: SMD (SMT) Tab
- Operating Temperature: -40°C ~ 125°C
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Paket: - |
Lager4.014 |
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Infineon Technologies |
IC PHASE CONTROLLER OVP 20MLPQ
- Applications: Processor
- Current - Supply: 10mA
- Voltage - Supply: 8.4 V ~ 14 V
- Operating Temperature: 0°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 20-VFQFN Exposed Pad
- Supplier Device Package: 20-MLPQ (4x4)
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Paket: 20-VFQFN Exposed Pad |
Lager17.520 |
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Infineon Technologies |
IC REGULATOR PG-VQFN-56-901
- Applications: Controller, DDR, Intel VR12, AMD SVI, PVI
- Voltage - Input: 3.3V
- Number of Outputs: 2
- Voltage - Output: -
- Operating Temperature: -20°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 56-VFQFN Exposed Pad
- Supplier Device Package: 56-VQFN (8x8)
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Paket: 56-VFQFN Exposed Pad |
Lager2.128 |
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Infineon Technologies |
IC HIGH SIDE PWR SWITCH DPAK-5
- Switch Type: -
- Number of Outputs: -
- Ratio - Input:Output: -
- Output Configuration: -
- Output Type: -
- Interface: -
- Voltage - Load: -
- Voltage - Supply (Vcc/Vdd): -
- Current - Output (Max): -
- Rds On (Typ): -
- Input Type: -
- Features: -
- Fault Protection: -
- Operating Temperature: -
- Package / Case: -
- Supplier Device Package: -
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Paket: - |
Lager6.368 |
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Infineon Technologies |
IC REG LDO 5V 0.15A 14DSO
- Output Configuration: -
- Output Type: -
- Number of Regulators: -
- Voltage - Input (Max): -
- Voltage - Output (Min/Fixed): -
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: -
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: -
- Control Features: -
- Protection Features: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Paket: - |
Lager4.720 |
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