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Infineon Technologies |
IGBT 600V TO247 COPAK
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Paket: - |
Lager3.488 |
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Infineon Technologies |
IGBT 600V 34A 100W D2PAK
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 34A
- Current - Collector Pulsed (Icm): 68A
- Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
- Power - Max: 100W
- Switching Energy: 260µJ (on), 3.45mJ (off)
- Input Type: Standard
- Gate Charge: 50nC
- Td (on/off) @ 25°C: 22ns/540ns
- Test Condition: 480V, 18A, 23 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
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Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Lager132.456 |
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Infineon Technologies |
IGBT 1200V 60A 349W TO247-3
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 60A
- Current - Collector Pulsed (Icm): 90A
- Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 30A
- Power - Max: 349W
- Switching Energy: 1.47mJ (off)
- Input Type: Standard
- Gate Charge: 263nC
- Td (on/off) @ 25°C: -/326ns
- Test Condition: 600V, 30A, 10 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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Paket: TO-247-3 |
Lager7.224 |
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Infineon Technologies |
MOSFET N-CH 30V 44A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 62W (Tc)
- Rds On (Max) @ Id, Vgs: 16 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager36.000 |
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Infineon Technologies |
MOSFET N-CH 25V 50A TO-263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 30µA
- Gate Charge (Qg) (Max) @ Vgs: 19nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 2390pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 71W (Tc)
- Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Lager3.760 |
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Infineon Technologies |
MOSFET N-CH 20V 54A I-PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 71W (Tc)
- Rds On (Max) @ Id, Vgs: 14 mOhm @ 26A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Paket: TO-251-3 Short Leads, IPak, TO-251AA |
Lager5.984 |
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Infineon Technologies |
MOSFET N-CH 40V 75A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4340pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 220W (Tc)
- Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 75A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Lager7.120 |
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Infineon Technologies |
MOSFET N-CH 20V 11A DIRECTFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 48A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1420pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.3W (Ta), 42W (Tc)
- Rds On (Max) @ Id, Vgs: 13 mOhm @ 11A, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET? MQ
- Package / Case: DirectFET? Isometric MQ
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Paket: DirectFET? Isometric MQ |
Lager9.120 |
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Infineon Technologies |
MOSFET N-CH 650V 8.7A TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 300µA
- Gate Charge (Qg) (Max) @ Vgs: 31.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 83.3W (Tc)
- Rds On (Max) @ Id, Vgs: 420 mOhm @ 3.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager6.592 |
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Infineon Technologies |
MOSFET P-CH 30V 12.6A 8DSO
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 136nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5890pF @ 25V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 1.79W (Ta)
- Rds On (Max) @ Id, Vgs: 8 mOhm @ 14.9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: P-DSO-8
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Paket: 8-SOIC (0.154", 3.90mm Width) |
Lager204.072 |
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Infineon Technologies |
MOSFET 2P-CH 20V 2.2A 6TSOP
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2.2A
- Rds On (Max) @ Id, Vgs: 135 mOhm @ 2.2A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V
- Power - Max: 960mW
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: 6-TSOP
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Paket: SOT-23-6 Thin, TSOT-23-6 |
Lager31.200 |
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Infineon Technologies |
DIODE GEN PURP 600V 100A WAFER
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 100A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.9V @ 100A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 27µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Sawn on foil
- Operating Temperature - Junction: -40°C ~ 175°C
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Paket: Die |
Lager6.288 |
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Infineon Technologies |
DIODE SCHOTTKY 1200V 8A TO252-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 8A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.95V @ 8A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 40µA @ 1200V
- Capacitance @ Vr, F: 365pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager3.648 |
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Infineon Technologies |
DIODE ARRAY GP 80V 200MA SOT323
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 80V
- Current - Average Rectified (Io) (per Diode): 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 150nA @ 70V
- Operating Temperature - Junction: 150°C (Max)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: PG-SOT323-3
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Paket: SC-70, SOT-323 |
Lager7.216 |
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Infineon Technologies |
IC REG LINEAR POS ADJ 6A TO263-5
- Output Configuration: Positive
- Output Type: Adjustable
- Number of Regulators: 1
- Voltage - Input (Max): 7V
- Voltage - Output (Min/Fixed): 1.25V
- Voltage - Output (Max): 5.5V
- Voltage Dropout (Max): 1.3V @ 6A
- Current - Output: 6A
- Current - Quiescent (Iq): -
- Current - Supply (Max): 10mA
- PSRR: 70dB (120Hz)
- Control Features: -
- Protection Features: Over Current, Over Temperature
- Operating Temperature: 0°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
- Supplier Device Package: TO-263-5
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Paket: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA |
Lager5.552 |
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Infineon Technologies |
IC REG LINEAR POS ADJ 5A DPAK
- Output Configuration: Positive
- Output Type: Adjustable
- Number of Regulators: 1
- Voltage - Input (Max): 7V
- Voltage - Output (Min/Fixed): 2.5V
- Voltage - Output (Max): 3.3V
- Voltage Dropout (Max): 1.3V @ 5A
- Current - Output: 5A
- Current - Quiescent (Iq): -
- Current - Supply (Max): 10mA
- PSRR: 70dB (120Hz)
- Control Features: -
- Protection Features: Over Current, Over Temperature
- Operating Temperature: 0°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: D-Pak
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Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager54.252 |
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Infineon Technologies |
IC BALLAST CTRL 600V 16-SOIC
- Type: Fluorescent Lamp Controller
- Frequency: 43.7kHz ~ 48.3kHz
- Voltage - Supply: 11.5 V ~ 16.6 V
- Current - Supply: 10mA
- Current - Output Source/Sink: -
- Dimming: Yes
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 16-SOIC
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Paket: 16-SOIC (0.154", 3.90mm Width) |
Lager85.272 |
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Infineon Technologies |
IC LED DRVR DCDC CTRLR 48VQFN
- Type: DC DC Controller
- Topology: Half-Bridge
- Internal Switch(s): No
- Number of Outputs: 4
- Voltage - Supply (Min): 4.5V
- Voltage - Supply (Max): 40V
- Voltage - Output: 55V
- Current - Output / Channel: -
- Frequency: 200kHz ~ 700kHz
- Dimming: Analog, PWM
- Applications: Automotive
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 48-VFQFN Exposed Pad
- Supplier Device Package: PG-VQFN-48-31
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Paket: 48-VFQFN Exposed Pad |
Lager2.896 |
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Infineon Technologies |
IC DVR LOW SIDE DUAL 8-SOIC
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 6 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2.5V
- Current - Peak Output (Source, Sink): 2.3A, 3.3A
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 25ns, 25ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Paket: 8-SOIC (0.154", 3.90mm Width) |
Lager30.000 |
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Infineon Technologies |
IC DRIVER BRIDGE 3-PHASE 28-DIP
- Driven Configuration: Half-Bridge
- Channel Type: 3-Phase
- Number of Drivers: 6
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2.2V
- Current - Peak Output (Source, Sink): 250mA, 500mA
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 90ns, 40ns
- Operating Temperature: 125°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 28-DIP (0.600", 15.24mm)
- Supplier Device Package: 28-DIP
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Paket: 28-DIP (0.600", 15.24mm) |
Lager4.592 |
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Infineon Technologies |
IC DRIVER BRIDGE 3PHASE 28SOIC
- Driven Configuration: Half-Bridge
- Channel Type: 3-Phase
- Number of Drivers: 6
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2.2V
- Current - Peak Output (Source, Sink): 250mA, 500mA
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 80ns, 35ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 28-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 28-SOIC
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Paket: 28-SOIC (0.295", 7.50mm Width) |
Lager54.720 |
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Infineon Technologies |
IC MCU 16BIT 192KB FLASH 64LQFP
- Core Processor: C166SV2
- Core Size: 16-Bit
- Speed: 80MHz
- Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
- Peripherals: I2S, POR, PWM, WDT
- Number of I/O: 40
- Program Memory Size: 192KB (192K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 26K x 8
- Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
- Data Converters: A/D 9x10b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: -
- Package / Case: 64-LQFP Exposed Pad
- Supplier Device Package: PG-LQFP-64-6
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Paket: 64-LQFP Exposed Pad |
Lager6.976 |
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Infineon Technologies |
IC MCU 16BIT 128KB FLASH 64LQFP
- Core Processor: C166SV2
- Core Size: 16-Bit
- Speed: 40MHz
- Connectivity: CAN, EBI/EMI, SPI, UART/USART
- Peripherals: PWM, WDT
- Number of I/O: 47
- Program Memory Size: 128KB (128K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 8K x 8
- Voltage - Supply (Vcc/Vdd): 2.35 V ~ 2.7 V
- Data Converters: A/D 14x8/10b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: 64-LQFP
- Supplier Device Package: 64-LQFP (10x10)
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Paket: 64-LQFP |
Lager4.176 |
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Infineon Technologies |
IC RELAY PHOTOVO 400V 6-DIP
- Circuit: SPST-NO (1 Form A)
- Output Type: AC, DC
- On-State Resistance (Max): 6 Ohm
- Load Current: 240mA
- Voltage - Input: 1.2VDC
- Voltage - Load: 0 ~ 400 V
- Mounting Type: Through Hole
- Termination Style: PC Pin
- Package / Case: 6-DIP (0.300", 7.62mm)
- Supplier Device Package: 6-DIP
- Relay Type: Relay
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Paket: 6-DIP (0.300", 7.62mm) |
Lager14.028 |
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Infineon Technologies |
DIODE GP 600V 5140A D-ELEM-1
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 5140A
- Voltage - Forward (Vf) (Max) @ If: 960 mV @ 4500 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 mA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Clamp On
- Package / Case: DO-200AC, K-PUK
- Supplier Device Package: BG-D-ELEM-1
- Operating Temperature - Junction: 180°C (Max)
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Paket: - |
Lager54 |
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Infineon Technologies |
MOSFET N-CH HI POWER WAFER
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Paket: - |
Request a Quote |
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Infineon Technologies |
IC REG LINEAR FIXED LDO REG
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 40V
- Voltage - Output (Min/Fixed): 10V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.5V @ 250mA
- Current - Output: 400mA
- Current - Quiescent (Iq): 220 µA
- Current - Supply (Max): 25 mA
- PSRR: 54dB (100Hz)
- Control Features: Inhibit
- Protection Features: Antisaturation, Over Temperature, Reverse Polarity, Short Circuit
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
- Supplier Device Package: PG-TO263-5-1
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Paket: - |
Request a Quote |
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Infineon Technologies |
DIODE MODULE GP 1KV 261A
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000 V
- Current - Average Rectified (Io) (per Diode): 261A
- Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 800 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200 mA @ 1000 V
- Operating Temperature - Junction: 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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Paket: - |
Request a Quote |
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Infineon Technologies |
IGBT MODULE 1200V 400A
- IGBT Type: Trench Field Stop
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 400 A
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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Paket: - |
Request a Quote |
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Infineon Technologies |
IC MCU 32BIT 256KB FLASH 100TQFP
- Core Processor: ARM® Cortex®-M0+
- Core Size: 32-Bit
- Speed: 48MHz
- Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART
- Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, Temp Sensor, WDT
- Number of I/O: 54
- Program Memory Size: 256KB (256K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 32K x 8
- Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
- Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7/8b
- Oscillator Type: External, Internal
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x14)
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