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Microsemi Corporation Produkte - Transistoren - FETs, MOSFET - Einzeln

Aufzeichnungen 588
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Beschreibung
Paket
Lager
Anzahl
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot APT40M75JN
Microsemi Corporation

MOSFET N-CH 400V 56A ISOTOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 370nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 520W (Tc)
  • Rds On (Max) @ Id, Vgs: 75 mOhm @ 28A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP?
  • Package / Case: SOT-227-4, miniBLOC
Paket: SOT-227-4, miniBLOC
Lager10.032
MOSFET (Metal Oxide)
400V
56A (Tc)
10V
4V @ 2.5mA
370nC @ 10V
6800pF @ 25V
±30V
-
520W (Tc)
75 mOhm @ 28A, 10V
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP?
SOT-227-4, miniBLOC
APT40M42JN
Microsemi Corporation

MOSFET N-CH 400V 86A ISOTOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 760nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 690W (Tc)
  • Rds On (Max) @ Id, Vgs: 42 mOhm @ 43A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP?
  • Package / Case: SOT-227-4, miniBLOC
Paket: SOT-227-4, miniBLOC
Lager5.888
MOSFET (Metal Oxide)
400V
86A (Tc)
10V
4V @ 5mA
760nC @ 10V
14000pF @ 25V
±30V
-
690W (Tc)
42 mOhm @ 43A, 10V
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP?
SOT-227-4, miniBLOC
APT4065BNG
Microsemi Corporation

MOSFET N-CH 400V 11A TO247AD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 180W (Tc)
  • Rds On (Max) @ Id, Vgs: 650 mOhm @ 5.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD
  • Package / Case: TO-247-3
Paket: TO-247-3
Lager2.752
MOSFET (Metal Oxide)
400V
11A (Tc)
10V
4V @ 1mA
55nC @ 10V
950pF @ 25V
±30V
-
180W (Tc)
650 mOhm @ 5.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD
TO-247-3
APT1002RBNG
Microsemi Corporation

MOSFET N-CH 1KV 8A TO247AD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 240W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD
  • Package / Case: TO-247-3
Paket: TO-247-3
Lager2.464
MOSFET (Metal Oxide)
1000V
8A (Tc)
10V
4V @ 1mA
105nC @ 10V
1800pF @ 25V
±30V
-
240W (Tc)
1.6 Ohm @ 4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD
TO-247-3
APT1001RBN
Microsemi Corporation

MOSFET N-CH 1KV 11A TO247AD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 310W (Tc)
  • Rds On (Max) @ Id, Vgs: 1 Ohm @ 5.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD
  • Package / Case: TO-247-3
Paket: TO-247-3
Lager2.512
MOSFET (Metal Oxide)
1000V
11A (Tc)
10V
4V @ 1mA
130nC @ 10V
2950pF @ 25V
±30V
-
310W (Tc)
1 Ohm @ 5.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD
TO-247-3
hot APT1001R1BN
Microsemi Corporation

MOSFET N-CH 1KV 10.5A TO247AD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 310W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 5.25A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD
  • Package / Case: TO-247-3
Paket: TO-247-3
Lager123.876
MOSFET (Metal Oxide)
1000V
10.5A (Tc)
10V
4V @ 1mA
130nC @ 10V
2950pF @ 25V
±30V
-
310W (Tc)
1.1 Ohm @ 5.25A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD
TO-247-3
JANTXV2N6898
Microsemi Corporation

P CHANNEL MOSFET

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 200 mOhm @ 15.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3
  • Package / Case: TO-204AA, TO-3
Paket: TO-204AA, TO-3
Lager7.984
MOSFET (Metal Oxide)
100V
25A (Tc)
10V
4V @ 250µA
-
3000pF @ 25V
±20V
-
150W (Tc)
200 mOhm @ 15.8A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-3
TO-204AA, TO-3
JANTX2N6898
Microsemi Corporation

P CHANNEL MOSFET

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 200 mOhm @ 15.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3
  • Package / Case: TO-204AA, TO-3
Paket: TO-204AA, TO-3
Lager5.088
MOSFET (Metal Oxide)
100V
25A (Tc)
10V
4V @ 250µA
-
3000pF @ 25V
±20V
-
150W (Tc)
200 mOhm @ 15.8A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-3
TO-204AA, TO-3
JAN2N6898
Microsemi Corporation

P CHANNEL MOSFET

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 200 mOhm @ 15.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3
  • Package / Case: TO-204AA, TO-3
Paket: TO-204AA, TO-3
Lager3.856
MOSFET (Metal Oxide)
100V
25A (Tc)
10V
4V @ 250µA
-
3000pF @ 25V
±20V
-
150W (Tc)
200 mOhm @ 15.8A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-3
TO-204AA, TO-3
APT25SM120B
Microsemi Corporation

POWER MOSFET - SIC

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 72nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 175W (Tc)
  • Rds On (Max) @ Id, Vgs: 175 mOhm @ 10A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
Paket: TO-247-3
Lager7.344
SiCFET (Silicon Carbide)
1200V
25A (Tc)
20V
2.5V @ 1mA
72nC @ 20V
-
+25V, -10V
-
175W (Tc)
175 mOhm @ 10A, 20V
-55°C ~ 175°C (TJ)
Through Hole
TO-247
TO-247-3
2N6770T1
Microsemi Corporation

MOSFET N-CH 500V 12A TO-254AA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 4W (Ta), 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 500 mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-254AA
  • Package / Case: TO-254-3, TO-254AA (Straight Leads)
Paket: TO-254-3, TO-254AA (Straight Leads)
Lager6.736
MOSFET (Metal Oxide)
500V
12A (Ta)
10V
4V @ 250µA
120nC @ 10V
-
±20V
-
4W (Ta), 150W (Tc)
500 mOhm @ 12A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-254AA
TO-254-3, TO-254AA (Straight Leads)
2N6768T1
Microsemi Corporation

MOSFET N-CH 400V 14A TO-254AA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 4W (Ta), 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 400 mOhm @ 14A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-254AA
  • Package / Case: TO-254-3, TO-254AA (Straight Leads)
Paket: TO-254-3, TO-254AA (Straight Leads)
Lager3.968
MOSFET (Metal Oxide)
400V
14A (Ta)
10V
4V @ 250µA
110nC @ 10V
-
±20V
-
4W (Ta), 150W (Tc)
400 mOhm @ 14A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-254AA
TO-254-3, TO-254AA (Straight Leads)
2N6764T1
Microsemi Corporation

MOSFET N-CH 100V 38A TO-204AE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 4W (Ta), 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 65 mOhm @ 38A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3
  • Package / Case: TO-204AE
Paket: TO-204AE
Lager6.992
MOSFET (Metal Oxide)
100V
38A (Tc)
10V
4V @ 250µA
125nC @ 10V
-
±20V
-
4W (Ta), 150W (Tc)
65 mOhm @ 38A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-3
TO-204AE
2N6849U
Microsemi Corporation

MOSFET P-CH 100V 18-LCC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 34.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta), 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 4.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 18-ULCC (9.14x7.49)
  • Package / Case: 18-BQFN Exposed Pad
Paket: 18-BQFN Exposed Pad
Lager6.288
MOSFET (Metal Oxide)
100V
6.5A (Tc)
10V
4V @ 250µA
34.8nC @ 10V
-
±20V
-
800mW (Ta), 25W (Tc)
300 mOhm @ 4.1A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
18-ULCC (9.14x7.49)
18-BQFN Exposed Pad
hot 2N6849
Microsemi Corporation

MOSFET P-CH 100V TO-205AF TO-39

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 34.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta), 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 320 mOhm @ 6.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-39
  • Package / Case: TO-205AF Metal Can
Paket: TO-205AF Metal Can
Lager7.408
MOSFET (Metal Oxide)
100V
6.5A (Tc)
10V
4V @ 250µA
34.8nC @ 10V
-
±20V
-
800mW (Ta), 25W (Tc)
320 mOhm @ 6.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-39
TO-205AF Metal Can
2N6802U
Microsemi Corporation

MOSFET N-CH 500V 18LCC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.46nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta), 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 18-ULCC (9.14x7.49)
  • Package / Case: 18-BQFN Exposed Pad
Paket: 18-BQFN Exposed Pad
Lager6.784
MOSFET (Metal Oxide)
500V
2.5A (Tc)
10V
4V @ 250µA
4.46nC @ 10V
-
±20V
-
800mW (Ta), 25W (Tc)
1.5 Ohm @ 1.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
18-ULCC (9.14x7.49)
18-BQFN Exposed Pad
hot 2N6802
Microsemi Corporation

MOSFET N-CH 500V TO-205AF TO-39

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.46nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta), 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-39
  • Package / Case: TO-205AD, TO-39-3 Metal Can
Paket: TO-205AD, TO-39-3 Metal Can
Lager5.376
MOSFET (Metal Oxide)
500V
2.5A (Tc)
10V
4V @ 250µA
4.46nC @ 10V
-
±20V
-
800mW (Ta), 25W (Tc)
1.5 Ohm @ 1.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-39
TO-205AD, TO-39-3 Metal Can
2N6800U
Microsemi Corporation

MOSFET N-CH 400V 18LCC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.75nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta), 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 1 Ohm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 18-ULCC (9.14x7.49)
  • Package / Case: 18-BQFN Exposed Pad
Paket: 18-BQFN Exposed Pad
Lager5.488
MOSFET (Metal Oxide)
400V
3A (Tc)
10V
4V @ 250µA
5.75nC @ 10V
-
±20V
-
800mW (Ta), 25W (Tc)
1 Ohm @ 2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
18-ULCC (9.14x7.49)
18-BQFN Exposed Pad
hot 2N6800
Microsemi Corporation

MOSFET N-CH 400V TO-205AF TO-39

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.75nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta), 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 1 Ohm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-39
  • Package / Case: TO-205AF Metal Can
Paket: TO-205AF Metal Can
Lager6.768
MOSFET (Metal Oxide)
400V
3A (Tc)
10V
4V @ 250µA
5.75nC @ 10V
-
±20V
-
800mW (Ta), 25W (Tc)
1 Ohm @ 2A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-39
TO-205AF Metal Can
2N6798U
Microsemi Corporation

MOSFET N-CH 200V 18LCC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.29nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta), 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 400 mOhm @ 3.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 18-ULCC (9.14x7.49)
  • Package / Case: 18-BQFN Exposed Pad
Paket: 18-BQFN Exposed Pad
Lager7.312
MOSFET (Metal Oxide)
200V
5.5A (Tc)
10V
4V @ 250µA
5.29nC @ 10V
-
±20V
-
800mW (Ta), 25W (Tc)
400 mOhm @ 3.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
18-ULCC (9.14x7.49)
18-BQFN Exposed Pad
hot 2N6798
Microsemi Corporation

MOSFET N-CH 200V TO-205AF TO-39

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.29nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta), 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 400 mOhm @ 3.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-39
  • Package / Case: TO-205AF Metal Can
Paket: TO-205AF Metal Can
Lager9.300
MOSFET (Metal Oxide)
200V
5.5A (Tc)
10V
4V @ 250µA
5.29nC @ 10V
-
±20V
-
800mW (Ta), 25W (Tc)
400 mOhm @ 3.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-39
TO-205AF Metal Can
hot 2N6796U
Microsemi Corporation

MOSFET N-CH 100V 18LCC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.34nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta), 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 180 mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 18-ULCC (9.14x7.49)
  • Package / Case: 18-BQFN Exposed Pad
Paket: 18-BQFN Exposed Pad
Lager4.432
MOSFET (Metal Oxide)
100V
8A (Tc)
10V
4V @ 250mA
6.34nC @ 10V
-
±20V
-
800mW (Ta), 25W (Tc)
180 mOhm @ 5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
18-ULCC (9.14x7.49)
18-BQFN Exposed Pad
hot 2N6796
Microsemi Corporation

MOSFET N-CH 100V TO-205AF TO-39

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.34nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta), 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 180 mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-39
  • Package / Case: TO-205AF Metal Can
Paket: TO-205AF Metal Can
Lager4.640
MOSFET (Metal Oxide)
100V
8A (Tc)
10V
4V @ 250mA
6.34nC @ 10V
-
±20V
-
800mW (Ta), 25W (Tc)
180 mOhm @ 5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-39
TO-205AF Metal Can
2N6790U
Microsemi Corporation

MOSFET N-CH 200V 18LCC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Tc)
  • Rds On (Max) @ Id, Vgs: 800 mOhm @ 2.25A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 18-ULCC (9.14x7.49)
  • Package / Case: 18-BQFN Exposed Pad
Paket: 18-BQFN Exposed Pad
Lager6.272
MOSFET (Metal Oxide)
200V
2.8A (Tc)
10V
4V @ 250µA
14.3nC @ 10V
-
±20V
-
800mW (Tc)
800 mOhm @ 2.25A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
18-ULCC (9.14x7.49)
18-BQFN Exposed Pad
hot 2N6790
Microsemi Corporation

MOSFET N-CH 200V TO-205AF

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Tc)
  • Rds On (Max) @ Id, Vgs: 800 mOhm @ 2.25A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-39
  • Package / Case: TO-205AF Metal Can
Paket: TO-205AF Metal Can
Lager4.768
MOSFET (Metal Oxide)
200V
3.5A (Tc)
10V
4V @ 250µA
14.3nC @ 10V
-
±20V
-
800mW (Tc)
800 mOhm @ 2.25A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-39
TO-205AF Metal Can
2N6788U
Microsemi Corporation

MOSFET N-CH 100V 18LCC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Tc)
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 3.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 18-ULCC (9.14x7.49)
  • Package / Case: 18-BQFN Exposed Pad
Paket: 18-BQFN Exposed Pad
Lager2.320
MOSFET (Metal Oxide)
100V
4.5A (Tc)
10V
4V @ 250µA
18nC @ 10V
-
±20V
-
800mW (Tc)
300 mOhm @ 3.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
18-ULCC (9.14x7.49)
18-BQFN Exposed Pad
hot 2N6788
Microsemi Corporation

MOSFET N-CH 100V TO-205AF

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Tc)
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 3.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-39
  • Package / Case: TO-205AF Metal Can
Paket: TO-205AF Metal Can
Lager7.600
MOSFET (Metal Oxide)
100V
6A (Tc)
10V
4V @ 250µA
18nC @ 10V
-
±20V
-
800mW (Tc)
300 mOhm @ 3.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-39
TO-205AF Metal Can
2N6784U
Microsemi Corporation

MOSFET N-CH 200V 18LCC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 2.25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta), 15W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.5A, 0V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 18-ULCC (9.14x7.49)
  • Package / Case: 18-BQFN Exposed Pad
Paket: 18-BQFN Exposed Pad
Lager7.456
MOSFET (Metal Oxide)
200V
2.25A (Tc)
10V
4V @ 250µA
8.6nC @ 10V
-
±20V
-
800mW (Ta), 15W (Tc)
1.5 Ohm @ 1.5A, 0V
-55°C ~ 150°C (TJ)
Surface Mount
18-ULCC (9.14x7.49)
18-BQFN Exposed Pad
hot 2N6784
Microsemi Corporation

MOSFET N-CH 200V TO-205AF

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 2.25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta), 15W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.5A, 0V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-39
  • Package / Case: TO-205AF Metal Can
Paket: TO-205AF Metal Can
Lager5.936
MOSFET (Metal Oxide)
200V
2.25A (Tc)
10V
4V @ 250µA
8.6nC @ 10V
-
±20V
-
800mW (Ta), 15W (Tc)
1.5 Ohm @ 1.5A, 0V
-55°C ~ 150°C (TJ)
Through Hole
TO-39
TO-205AF Metal Can
2N6782U
Microsemi Corporation

MOSFET N-CH 100V 18LCC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta), 15W (Tc)
  • Rds On (Max) @ Id, Vgs: 600 mOhm @ 2.25A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 18-ULCC (9.14x7.49)
  • Package / Case: 18-BQFN Exposed Pad
Paket: 18-BQFN Exposed Pad
Lager3.312
MOSFET (Metal Oxide)
100V
3.5A (Tc)
10V
4V @ 250µA
8.1nC @ 10V
-
±20V
-
800mW (Ta), 15W (Tc)
600 mOhm @ 2.25A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
18-ULCC (9.14x7.49)
18-BQFN Exposed Pad