Page 22 - Rohm Semiconductor Produkte - Transistoren - FETs, MOSFET - Einzeln

RSL020P03FRATR

Rohm Semiconductor

MOSFET P-CH 30V 2A TUMT6

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2A, 10V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: TUMT6
Package / Case: 6-SMD, Flat Leads

Paket: -

Lager40.401

MOSFET (Metal Oxide)

30 V

2A (Ta)

10V

2.5V @ 1mA

3.9 nC @ 5 V

350 pF @ 10 V

±20V

-

1W (Ta)

120mOhm @ 2A, 10V

150°C

Surface Mount

TUMT6

6-SMD, Flat Leads

R6020ANZ8U7C8

Rohm Semiconductor

MOSFET N-CH 600V 20A TO3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 10V
Operating Temperature: 150°C
Mounting Type: Through Hole
Supplier Device Package: TO-3PF
Package / Case: TO-3P-3 Full Pack

Paket: -

Request a Quote

MOSFET (Metal Oxide)

600 V

20A (Tc)

10V

4.15V @ 1mA

65 nC @ 10 V

2040 pF @ 25 V

±30V

-

120W (Tc)

220mOhm @ 10A, 10V

150°C

Through Hole

TO-3PF

TO-3P-3 Full Pack

R6520ENXC7G

Rohm Semiconductor

650V 20A TO-220FM, LOW-NOISE POW

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 630µA
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 205mOhm @ 9.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220FM
Package / Case: TO-220-3 Full Pack

Paket: -

Lager2.907

MOSFET (Metal Oxide)

650 V

20A (Tc)

10V

4V @ 630µA

61 nC @ 10 V

1400 pF @ 25 V

±20V

-

68W (Tc)

205mOhm @ 9.5A, 10V

150°C (TJ)

Through Hole

TO-220FM

TO-220-3 Full Pack

RQ5E020SPTL

Rohm Semiconductor

MOSFET P-CH 30V 2A TSMT3

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 10 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TSMT3
Package / Case: SC-96

Paket: -

Lager8.055

MOSFET (Metal Oxide)

30 V

2A (Ta)

4V, 10V

2.5V @ 1mA

4.3 nC @ 5 V

370 pF @ 10 V

±20V

-

700mW (Ta)

120mOhm @ 2A, 10V

150°C (TJ)

Surface Mount

TSMT3

SC-96

RQ6G050ATTCR

Rohm Semiconductor

PCH -30V -5A POWER MOSFET - RQ6G

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TSMT6 (SC-95)
Package / Case: SOT-23-6 Thin, TSOT-23-6

Paket: -

Lager70.098

MOSFET (Metal Oxide)

40 V

5A (Ta)

4.5V, 10V

2.5V @ 1mA

22 nC @ 10 V

1100 pF @ 20 V

±20V

-

950mW (Ta)

40mOhm @ 5A, 10V

150°C (TJ)

Surface Mount

TSMT6 (SC-95)

SOT-23-6 Thin, TSOT-23-6

R6000ENHTB1

Rohm Semiconductor

600V 0.5A, SOP8, LOW-NOISE POWER

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 8.8Ohm @ 200mA, 10V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP
Package / Case: 8-SOIC (0.154", 3.90mm Width)

Paket: -

Lager6.555

MOSFET (Metal Oxide)

600 V

500mA (Ta)

10V

5V @ 1mA

4.3 nC @ 10 V

45 pF @ 25 V

±20V

-

2W (Ta)

8.8Ohm @ 200mA, 10V

150°C

Surface Mount

8-SOP

8-SOIC (0.154", 3.90mm Width)

RQ6E035SPTR

Rohm Semiconductor

MOSFET P-CH 30V 3.5A TSMT6

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 10 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TSMT6 (SC-95)
Package / Case: SOT-23-6 Thin, TSOT-23-6

Paket: -

Lager8.118

MOSFET (Metal Oxide)

30 V

3.5A (Ta)

4V, 10V

2.5V @ 1mA

9.2 nC @ 5 V

780 pF @ 10 V

±20V

-

950mW (Ta)

65mOhm @ 3.5A, 10V

150°C (TJ)

Surface Mount

TSMT6 (SC-95)

SOT-23-6 Thin, TSOT-23-6

SCT4013DEC11

Rohm Semiconductor

750V, 105A, 3-PIN THD, TRENCH-ST

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 750 V
Current - Continuous Drain (Id) @ 25°C: 105A (Tj)
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs(th) (Max) @ Id: 4.8V @ 30.8mA
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4580 pF @ 500 V
Vgs (Max): +21V, -4V
FET Feature: -
Power Dissipation (Max): 312W
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 58A, 18V
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247N
Package / Case: TO-247-3

Paket: -

Lager1.251

SiCFET (Silicon Carbide)

750 V

105A (Tj)

18V

4.8V @ 30.8mA

170 nC @ 18 V

4580 pF @ 500 V

+21V, -4V

-

312W

16.9mOhm @ 58A, 18V

175°C (TJ)

Through Hole

TO-247N

TO-247-3

RH6P040BHTB1

Rohm Semiconductor

NCH 100V 40A, HSMT8, POWER MOSFE

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 59W (Tc)
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 40A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-HSMT (3.2x3)
Package / Case: 8-PowerVDFN

Paket: -

Lager16.380

MOSFET (Metal Oxide)

100 V

40A (Tc)

6V, 10V

4V @ 1mA

16.7 nC @ 10 V

1080 pF @ 50 V

±20V

-

59W (Tc)

15.6mOhm @ 40A, 10V

150°C (TJ)

Surface Mount

8-HSMT (3.2x3)

8-PowerVDFN

R6004ENXC7G

Rohm Semiconductor

600V 4A TO-220FM, LOW-NOISE POWE

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220FM
Package / Case: TO-220-3 Full Pack

Paket: -

Lager2.460

MOSFET (Metal Oxide)

600 V

4A (Tc)

10V

4V @ 1mA

15 nC @ 10 V

250 pF @ 25 V

±20V

-

40W (Tc)

980mOhm @ 1.5A, 10V

150°C (TJ)

Through Hole

TO-220FM

TO-220-3 Full Pack

R6006KND3TL1

Rohm Semiconductor

MOSFET N-CH 600V 6A TO252

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 830mOhm @ 3A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

Paket: -

Lager7.989

MOSFET (Metal Oxide)

600 V

6A (Tc)

10V

5.5V @ 1mA

12 nC @ 10 V

350 pF @ 25 V

±20V

-

70W (Tc)

830mOhm @ 3A, 10V

150°C (TJ)

Surface Mount

TO-252

TO-252-3, DPAK (2 Leads + Tab), SC-63

RQ7L050ATTCR

Rohm Semiconductor

PCH -60V -5A SMALL SIGNAL POWER

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TSMT8
Package / Case: 8-SMD, Flat Lead

Paket: -

Lager6.255

MOSFET (Metal Oxide)

60 V

5A (Ta)

4.5V, 10V

2.5V @ 1mA

38 nC @ 10 V

2160 pF @ 30 V

±20V

-

1.1W (Ta)

39mOhm @ 5A, 10V

150°C (TJ)

Surface Mount

TSMT8

8-SMD, Flat Lead

LSS050P03FP8TB1

Rohm Semiconductor

MOSFET P-CH 30V 5A SOP8

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

Paket: -

Request a Quote

-

RTL035N03FRATR

Rohm Semiconductor

MOSFET N-CH 30V 3.5A TUMT6

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 3.5A, 4.5V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: TUMT6
Package / Case: 6-SMD, Flat Leads

Paket: -

Lager34.098

MOSFET (Metal Oxide)

30 V

3.5A (Ta)

2.5V, 4.5V

1.5V @ 1mA

6.4 nC @ 4.5 V

350 pF @ 10 V

-

1W (Ta)

56mOhm @ 3.5A, 4.5V

150°C

Surface Mount

TUMT6

6-SMD, Flat Leads

RF4G060ATTCR

Rohm Semiconductor

PCH -40V -6A POWER, DFN2020, MOS

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 6A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: HUML2020L8
Package / Case: 6-PowerUDFN

Paket: -

Lager8.898

MOSFET (Metal Oxide)

40 V

6A (Ta)

4.5V, 10V

2.5V @ 1mA

17.2 nC @ 10 V

880 pF @ 20 V

±20V

-

2W (Ta)

40mOhm @ 6A, 10V

150°C (TJ)

Surface Mount

HUML2020L8

6-PowerUDFN

SCT4045DW7HRTL

Rohm Semiconductor

750V, 31A, 7-PIN SMD, TRENCH-STR

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 750 V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs(th) (Max) @ Id: 4.8V @ 8.89mA
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 500 V
Vgs (Max): +21V, -4V
FET Feature: -
Power Dissipation (Max): 93W
Rds On (Max) @ Id, Vgs: 59mOhm @ 17A, 18V
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263-7L
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Paket: -

Lager2.967

SiCFET (Silicon Carbide)

750 V

31A (Tc)

18V

4.8V @ 8.89mA

63 nC @ 18 V

1460 pF @ 500 V

+21V, -4V

-

93W

59mOhm @ 17A, 18V

175°C (TJ)

Surface Mount

TO-263-7L

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

RQ6L020SPTCR

Rohm Semiconductor

MOSFET P-CH 60V 2A TSMT6

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 10 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 210mOhm @ 2A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TSMT6 (SC-95)
Package / Case: SOT-23-6 Thin, TSOT-23-6

Paket: -

Lager62.280

MOSFET (Metal Oxide)

60 V

2A (Ta)

4V, 10V

3V @ 1mA

7.2 nC @ 5 V

750 pF @ 10 V

±20V

-

1.25W (Ta)

210mOhm @ 2A, 10V

150°C (TJ)

Surface Mount

TSMT6 (SC-95)

SOT-23-6 Thin, TSOT-23-6

RTR025N03HZGTL

Rohm Semiconductor

MOSFET N-CH 30V 2.5A TSMT3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 92mOhm @ 2.5A, 4.5V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TSMT3
Package / Case: SC-96

Paket: -

Lager61.047

MOSFET (Metal Oxide)

30 V

2.5A (Ta)

2.5V, 4.5V

1.5V @ 1mA

4.6 nC @ 4.5 V

220 pF @ 10 V

±12V

-

700mW (Ta)

92mOhm @ 2.5A, 4.5V

150°C (TJ)

Surface Mount

TSMT3

SC-96

RS6N120BHTB1

Rohm Semiconductor

NCH 80V 120A, HSOP8, POWER MOSFE

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 60A, 6V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-HSOP
Package / Case: 8-PowerTDFN

Paket: -

Lager5.058

MOSFET (Metal Oxide)

80 V

120A (Tc)

6V, 10V

4V @ 1mA

53 nC @ 10 V

3420 pF @ 40 V

±20V

-

104W (Tc)

4.9mOhm @ 60A, 6V

150°C (TJ)

Surface Mount

8-HSOP

8-PowerTDFN

RD3P175SNTL1

Rohm Semiconductor

MOSFET N-CH 100V 17.5A TO252

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 8.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

Paket: -

Lager41.373

MOSFET (Metal Oxide)

100 V

17.5A (Ta)

4V, 10V

2.5V @ 1mA

24 nC @ 10 V

950 pF @ 25 V

±20V

-

20W (Tc)

105mOhm @ 8.8A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-252

TO-252-3, DPAK (2 Leads + Tab), SC-63

SCT3080ARHRC15

Rohm Semiconductor

650V, 30A, 4-PIN THD, TRENCH-STR

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 571 pF @ 500 V
Vgs (Max): +22V, -4V
FET Feature: -
Power Dissipation (Max): 134W
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-4L
Package / Case: TO-247-4

Paket: -

Lager1.335

MOSFET (Metal Oxide)

650 V

30A (Tc)

18V

5.6V @ 5mA

48 nC @ 18 V

571 pF @ 500 V

+22V, -4V

-

134W

104mOhm @ 10A, 18V

175°C (TJ)

Through Hole

TO-247-4L

TO-247-4

R8005ANJGTL

Rohm Semiconductor

NCH 800V 5A POWER MOSFET : R8005

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 2.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263S
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Paket: -

Lager5.952

MOSFET (Metal Oxide)

800 V

5A (Tc)

10V

5V @ 1mA

20 nC @ 10 V

500 pF @ 25 V

±30V

-

120W (Tc)

2.1Ohm @ 2.5A, 10V

150°C (TJ)

Surface Mount

TO-263S

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

RV5L030GNTCR1

Rohm Semiconductor

MOSFET N-CH 30V 3A DFN1616-6

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

Paket: -

Request a Quote

-

RUC002N05HZGT116

Rohm Semiconductor

MOSFET N-CH 50V 200MA SST3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 50 V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: -
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SST3
Package / Case: TO-236-3, SC-59, SOT-23-3

Paket: -

Lager2.610

MOSFET (Metal Oxide)

50 V

200mA (Ta)

1.2V, 4.5V

1V @ 1mA

-

25 pF @ 10 V

±8V

-

350mW (Ta)

-

150°C (TJ)

Surface Mount

SST3

TO-236-3, SC-59, SOT-23-3

R6006KND4TL1

Rohm Semiconductor

600V 2.8A SOT-223-3, HIGH-SPEED

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 12.3W (Tc)
Rds On (Max) @ Id, Vgs: 870mOhm @ 2A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-223-3
Package / Case: TO-261-3

Paket: -

Lager11.985

MOSFET (Metal Oxide)

600 V

2.8A (Tc)

10V

5.5V @ 1mA

12 nC @ 10 V

350 pF @ 25 V

±20V

-

12.3W (Tc)

870mOhm @ 2A, 10V

150°C (TJ)

Surface Mount

SOT-223-3

TO-261-3

R6024KNXC7G

Rohm Semiconductor

600V 24A TO-220FM, HIGH-SPEED SW

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220FM
Package / Case: TO-220-3 Full Pack

Paket: -

Lager2.910

MOSFET (Metal Oxide)

600 V

24A (Tc)

10V

5V @ 1mA

45 nC @ 10 V

2000 pF @ 25 V

±20V

-

74W (Tc)

165mOhm @ 11.3A, 10V

150°C (TJ)

Through Hole

TO-220FM

TO-220-3 Full Pack

R6009ENXC7G

Rohm Semiconductor

600V 9A TO-220FM, LOW-NOISE POWE

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 48W (Tc)
Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220FM
Package / Case: TO-220-3 Full Pack

Paket: -

Lager3.000

MOSFET (Metal Oxide)

600 V

9A (Ta)

10V

4V @ 1mA

23 nC @ 10 V

430 pF @ 25 V

±20V

-

48W (Tc)

535mOhm @ 2.8A, 10V

150°C (TJ)

Through Hole

TO-220FM

TO-220-3 Full Pack

RQ3L070ATTB

Rohm Semiconductor

PCH -60V -25A, HSMT8, POWER MOSF

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-HSMT (3.2x3)
Package / Case: 8-PowerVDFN

Paket: -

Lager19.728

MOSFET (Metal Oxide)

60 V

25A (Tc)

4.5V, 10V

2.5V @ 1mA

48 nC @ 10 V

2850 pF @ 30 V

±20V

-

2W (Ta)

28mOhm @ 7A, 10V

150°C (TJ)

Surface Mount

8-HSMT (3.2x3)

8-PowerVDFN

Teilenummer	Hersteller	Beschreibung	Paket	Lager	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
RSL020P03FRATR	Rohm Semiconductor	MOSFET P-CH 30V 2A TUMT6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 120mOhm @ 2A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: TUMT6 Package / Case: 6-SMD, Flat Leads	Paket: -	Lager40.401	MOSFET (Metal Oxide)	30 V	2A (Ta)	10V	2.5V @ 1mA	3.9 nC @ 5 V	350 pF @ 10 V	±20V	-	1W (Ta)	120mOhm @ 2A, 10V	150°C	Surface Mount	TUMT6	6-SMD, Flat Leads
R6020ANZ8U7C8	Rohm Semiconductor	MOSFET N-CH 600V 20A TO3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 120W (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 10V Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	Paket: -	Request a Quote	MOSFET (Metal Oxide)	600 V	20A (Tc)	10V	4.15V @ 1mA	65 nC @ 10 V	2040 pF @ 25 V	±30V	-	120W (Tc)	220mOhm @ 10A, 10V	150°C	Through Hole	TO-3PF	TO-3P-3 Full Pack
R6520ENXC7G	Rohm Semiconductor	650V 20A TO-220FM, LOW-NOISE POW FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 630µA Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 205mOhm @ 9.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	Paket: -	Lager2.907	MOSFET (Metal Oxide)	650 V	20A (Tc)	10V	4V @ 630µA	61 nC @ 10 V	1400 pF @ 25 V	±20V	-	68W (Tc)	205mOhm @ 9.5A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-3 Full Pack
RQ5E020SPTL	Rohm Semiconductor	MOSFET P-CH 30V 2A TSMT3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 120mOhm @ 2A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT3 Package / Case: SC-96	Paket: -	Lager8.055	MOSFET (Metal Oxide)	30 V	2A (Ta)	4V, 10V	2.5V @ 1mA	4.3 nC @ 5 V	370 pF @ 10 V	±20V	-	700mW (Ta)	120mOhm @ 2A, 10V	150°C (TJ)	Surface Mount	TSMT3	SC-96
RQ6G050ATTCR	Rohm Semiconductor	PCH -30V -5A POWER MOSFET - RQ6G FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 950mW (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT6 (SC-95) Package / Case: SOT-23-6 Thin, TSOT-23-6	Paket: -	Lager70.098	MOSFET (Metal Oxide)	40 V	5A (Ta)	4.5V, 10V	2.5V @ 1mA	22 nC @ 10 V	1100 pF @ 20 V	±20V	-	950mW (Ta)	40mOhm @ 5A, 10V	150°C (TJ)	Surface Mount	TSMT6 (SC-95)	SOT-23-6 Thin, TSOT-23-6
R6000ENHTB1	Rohm Semiconductor	600V 0.5A, SOP8, LOW-NOISE POWER FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 8.8Ohm @ 200mA, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Paket: -	Lager6.555	MOSFET (Metal Oxide)	600 V	500mA (Ta)	10V	5V @ 1mA	4.3 nC @ 10 V	45 pF @ 25 V	±20V	-	2W (Ta)	8.8Ohm @ 200mA, 10V	150°C	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
RQ6E035SPTR	Rohm Semiconductor	MOSFET P-CH 30V 3.5A TSMT6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 950mW (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 3.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT6 (SC-95) Package / Case: SOT-23-6 Thin, TSOT-23-6	Paket: -	Lager8.118	MOSFET (Metal Oxide)	30 V	3.5A (Ta)	4V, 10V	2.5V @ 1mA	9.2 nC @ 5 V	780 pF @ 10 V	±20V	-	950mW (Ta)	65mOhm @ 3.5A, 10V	150°C (TJ)	Surface Mount	TSMT6 (SC-95)	SOT-23-6 Thin, TSOT-23-6
SCT4013DEC11	Rohm Semiconductor	750V, 105A, 3-PIN THD, TRENCH-ST FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 750 V Current - Continuous Drain (Id) @ 25°C: 105A (Tj) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 4.8V @ 30.8mA Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 4580 pF @ 500 V Vgs (Max): +21V, -4V FET Feature: - Power Dissipation (Max): 312W Rds On (Max) @ Id, Vgs: 16.9mOhm @ 58A, 18V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	Paket: -	Lager1.251	SiCFET (Silicon Carbide)	750 V	105A (Tj)	18V	4.8V @ 30.8mA	170 nC @ 18 V	4580 pF @ 500 V	+21V, -4V	-	312W	16.9mOhm @ 58A, 18V	175°C (TJ)	Through Hole	TO-247N	TO-247-3
RH6P040BHTB1	Rohm Semiconductor	NCH 100V 40A, HSMT8, POWER MOSFE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 59W (Tc) Rds On (Max) @ Id, Vgs: 15.6mOhm @ 40A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSMT (3.2x3) Package / Case: 8-PowerVDFN	Paket: -	Lager16.380	MOSFET (Metal Oxide)	100 V	40A (Tc)	6V, 10V	4V @ 1mA	16.7 nC @ 10 V	1080 pF @ 50 V	±20V	-	59W (Tc)	15.6mOhm @ 40A, 10V	150°C (TJ)	Surface Mount	8-HSMT (3.2x3)	8-PowerVDFN
R6004ENXC7G	Rohm Semiconductor	600V 4A TO-220FM, LOW-NOISE POWE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	Paket: -	Lager2.460	MOSFET (Metal Oxide)	600 V	4A (Tc)	10V	4V @ 1mA	15 nC @ 10 V	250 pF @ 25 V	±20V	-	40W (Tc)	980mOhm @ 1.5A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-3 Full Pack
R6006KND3TL1	Rohm Semiconductor	MOSFET N-CH 600V 6A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 830mOhm @ 3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Paket: -	Lager7.989	MOSFET (Metal Oxide)	600 V	6A (Tc)	10V	5.5V @ 1mA	12 nC @ 10 V	350 pF @ 25 V	±20V	-	70W (Tc)	830mOhm @ 3A, 10V	150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
RQ7L050ATTCR	Rohm Semiconductor	PCH -60V -5A SMALL SIGNAL POWER FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 39mOhm @ 5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT8 Package / Case: 8-SMD, Flat Lead	Paket: -	Lager6.255	MOSFET (Metal Oxide)	60 V	5A (Ta)	4.5V, 10V	2.5V @ 1mA	38 nC @ 10 V	2160 pF @ 30 V	±20V	-	1.1W (Ta)	39mOhm @ 5A, 10V	150°C (TJ)	Surface Mount	TSMT8	8-SMD, Flat Lead
LSS050P03FP8TB1	Rohm Semiconductor	MOSFET P-CH 30V 5A SOP8 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RTL035N03FRATR	Rohm Semiconductor	MOSFET N-CH 30V 3.5A TUMT6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 56mOhm @ 3.5A, 4.5V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: TUMT6 Package / Case: 6-SMD, Flat Leads	Paket: -	Lager34.098	MOSFET (Metal Oxide)	30 V	3.5A (Ta)	2.5V, 4.5V	1.5V @ 1mA	6.4 nC @ 4.5 V	350 pF @ 10 V	-	-	1W (Ta)	56mOhm @ 3.5A, 4.5V	150°C	Surface Mount	TUMT6	6-SMD, Flat Leads
RF4G060ATTCR	Rohm Semiconductor	PCH -40V -6A POWER, DFN2020, MOS FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 6A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: HUML2020L8 Package / Case: 6-PowerUDFN	Paket: -	Lager8.898	MOSFET (Metal Oxide)	40 V	6A (Ta)	4.5V, 10V	2.5V @ 1mA	17.2 nC @ 10 V	880 pF @ 20 V	±20V	-	2W (Ta)	40mOhm @ 6A, 10V	150°C (TJ)	Surface Mount	HUML2020L8	6-PowerUDFN
SCT4045DW7HRTL	Rohm Semiconductor	750V, 31A, 7-PIN SMD, TRENCH-STR FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 750 V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 4.8V @ 8.89mA Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 500 V Vgs (Max): +21V, -4V FET Feature: - Power Dissipation (Max): 93W Rds On (Max) @ Id, Vgs: 59mOhm @ 17A, 18V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-7L Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Paket: -	Lager2.967	SiCFET (Silicon Carbide)	750 V	31A (Tc)	18V	4.8V @ 8.89mA	63 nC @ 18 V	1460 pF @ 500 V	+21V, -4V	-	93W	59mOhm @ 17A, 18V	175°C (TJ)	Surface Mount	TO-263-7L	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
RQ6L020SPTCR	Rohm Semiconductor	MOSFET P-CH 60V 2A TSMT6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 210mOhm @ 2A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT6 (SC-95) Package / Case: SOT-23-6 Thin, TSOT-23-6	Paket: -	Lager62.280	MOSFET (Metal Oxide)	60 V	2A (Ta)	4V, 10V	3V @ 1mA	7.2 nC @ 5 V	750 pF @ 10 V	±20V	-	1.25W (Ta)	210mOhm @ 2A, 10V	150°C (TJ)	Surface Mount	TSMT6 (SC-95)	SOT-23-6 Thin, TSOT-23-6
RTR025N03HZGTL	Rohm Semiconductor	MOSFET N-CH 30V 2.5A TSMT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 92mOhm @ 2.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT3 Package / Case: SC-96	Paket: -	Lager61.047	MOSFET (Metal Oxide)	30 V	2.5A (Ta)	2.5V, 4.5V	1.5V @ 1mA	4.6 nC @ 4.5 V	220 pF @ 10 V	±12V	-	700mW (Ta)	92mOhm @ 2.5A, 4.5V	150°C (TJ)	Surface Mount	TSMT3	SC-96
RS6N120BHTB1	Rohm Semiconductor	NCH 80V 120A, HSOP8, POWER MOSFE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 60A, 6V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSOP Package / Case: 8-PowerTDFN	Paket: -	Lager5.058	MOSFET (Metal Oxide)	80 V	120A (Tc)	6V, 10V	4V @ 1mA	53 nC @ 10 V	3420 pF @ 40 V	±20V	-	104W (Tc)	4.9mOhm @ 60A, 6V	150°C (TJ)	Surface Mount	8-HSOP	8-PowerTDFN
RD3P175SNTL1	Rohm Semiconductor	MOSFET N-CH 100V 17.5A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 8.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Paket: -	Lager41.373	MOSFET (Metal Oxide)	100 V	17.5A (Ta)	4V, 10V	2.5V @ 1mA	24 nC @ 10 V	950 pF @ 25 V	±20V	-	20W (Tc)	105mOhm @ 8.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
SCT3080ARHRC15	Rohm Semiconductor	650V, 30A, 4-PIN THD, TRENCH-STR FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 5.6V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 571 pF @ 500 V Vgs (Max): +22V, -4V FET Feature: - Power Dissipation (Max): 134W Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4L Package / Case: TO-247-4	Paket: -	Lager1.335	MOSFET (Metal Oxide)	650 V	30A (Tc)	18V	5.6V @ 5mA	48 nC @ 18 V	571 pF @ 500 V	+22V, -4V	-	134W	104mOhm @ 10A, 18V	175°C (TJ)	Through Hole	TO-247-4L	TO-247-4
R8005ANJGTL	Rohm Semiconductor	NCH 800V 5A POWER MOSFET : R8005 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 120W (Tc) Rds On (Max) @ Id, Vgs: 2.1Ohm @ 2.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263S Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Paket: -	Lager5.952	MOSFET (Metal Oxide)	800 V	5A (Tc)	10V	5V @ 1mA	20 nC @ 10 V	500 pF @ 25 V	±30V	-	120W (Tc)	2.1Ohm @ 2.5A, 10V	150°C (TJ)	Surface Mount	TO-263S	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
RV5L030GNTCR1	Rohm Semiconductor	MOSFET N-CH 30V 3A DFN1616-6 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RUC002N05HZGT116	Rohm Semiconductor	MOSFET N-CH 50V 200MA SST3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50 V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SST3 Package / Case: TO-236-3, SC-59, SOT-23-3	Paket: -	Lager2.610	MOSFET (Metal Oxide)	50 V	200mA (Ta)	1.2V, 4.5V	1V @ 1mA	-	25 pF @ 10 V	±8V	-	350mW (Ta)	-	150°C (TJ)	Surface Mount	SST3	TO-236-3, SC-59, SOT-23-3
R6006KND4TL1	Rohm Semiconductor	600V 2.8A SOT-223-3, HIGH-SPEED FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 12.3W (Tc) Rds On (Max) @ Id, Vgs: 870mOhm @ 2A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223-3 Package / Case: TO-261-3	Paket: -	Lager11.985	MOSFET (Metal Oxide)	600 V	2.8A (Tc)	10V	5.5V @ 1mA	12 nC @ 10 V	350 pF @ 25 V	±20V	-	12.3W (Tc)	870mOhm @ 2A, 10V	150°C (TJ)	Surface Mount	SOT-223-3	TO-261-3
R6024KNXC7G	Rohm Semiconductor	600V 24A TO-220FM, HIGH-SPEED SW FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	Paket: -	Lager2.910	MOSFET (Metal Oxide)	600 V	24A (Tc)	10V	5V @ 1mA	45 nC @ 10 V	2000 pF @ 25 V	±20V	-	74W (Tc)	165mOhm @ 11.3A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-3 Full Pack
R6009ENXC7G	Rohm Semiconductor	600V 9A TO-220FM, LOW-NOISE POWE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	Paket: -	Lager3.000	MOSFET (Metal Oxide)	600 V	9A (Ta)	10V	4V @ 1mA	23 nC @ 10 V	430 pF @ 25 V	±20V	-	48W (Tc)	535mOhm @ 2.8A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-3 Full Pack
RQ3L070ATTB	Rohm Semiconductor	PCH -60V -25A, HSMT8, POWER MOSF FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSMT (3.2x3) Package / Case: 8-PowerVDFN	Paket: -	Lager19.728	MOSFET (Metal Oxide)	60 V	25A (Tc)	4.5V, 10V	2.5V @ 1mA	48 nC @ 10 V	2850 pF @ 30 V	±20V	-	2W (Ta)	28mOhm @ 7A, 10V	150°C (TJ)	Surface Mount	8-HSMT (3.2x3)	8-PowerVDFN