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Rohm Semiconductor Produkte - Transistoren - FETs, MOSFET - Einzeln

Aufzeichnungen 1.247
Page  25/45
Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot RRH140P03TB1
Rohm Semiconductor

MOSFET P-CH 30V 14A SOP8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 80nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 650mW (Ta)
  • Rds On (Max) @ Id, Vgs: 7 mOhm @ 14A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager10.716
MOSFET (Metal Oxide)
30V
14A (Ta)
4V, 10V
2.5V @ 1mA
80nC @ 5V
8000pF @ 10V
±20V
-
650mW (Ta)
7 mOhm @ 14A, 10V
150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
hot RSD160P05TL
Rohm Semiconductor

MOSFET P-CH 45V 16A CPT3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 45V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 20W (Tc)
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 16A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: CPT3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63
Lager14.568
MOSFET (Metal Oxide)
45V
16A (Ta)
4V, 10V
3V @ 1mA
16nC @ 5V
2000pF @ 10V
±20V
-
20W (Tc)
50 mOhm @ 16A, 10V
150°C (TJ)
Surface Mount
CPT3
TO-252-3, DPak (2 Leads + Tab), SC-63
hot RHP020N06T100
Rohm Semiconductor

MOSFET N-CH 60V 2A SOT-89

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 200 mOhm @ 2A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: MPT3
  • Package / Case: TO-243AA
Paket: TO-243AA
Lager404.676
MOSFET (Metal Oxide)
60V
2A (Ta)
4V, 10V
2.5V @ 1mA
14nC @ 10V
140pF @ 10V
±20V
-
500mW (Ta)
200 mOhm @ 2A, 10V
150°C (TJ)
Surface Mount
MPT3
TO-243AA
hot RTQ045N03TR
Rohm Semiconductor

MOSFET N-CH 30V 4.5A TSMT6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 10V
  • Vgs (Max): 12V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta)
  • Rds On (Max) @ Id, Vgs: 43 mOhm @ 4.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT6 (SC-95)
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
Paket: SOT-23-6 Thin, TSOT-23-6
Lager2.417.496
MOSFET (Metal Oxide)
30V
4.5A (Ta)
2.5V, 4.5V
1.5V @ 1mA
10.7nC @ 4.5V
540pF @ 10V
12V
-
1.25W (Ta)
43 mOhm @ 4.5A, 4.5V
150°C (TJ)
Surface Mount
TSMT6 (SC-95)
SOT-23-6 Thin, TSOT-23-6
RQ3E120ATTB
Rohm Semiconductor

MOSFET P-CH 30V 12A HSMT8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 12A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSMT (3.2x3)
  • Package / Case: 8-PowerVDFN
Paket: 8-PowerVDFN
Lager28.284
MOSFET (Metal Oxide)
30V
12A (Ta)
4.5V, 10V
2.5V @ 1mA
62nC @ 10V
3200pF @ 15V
±20V
-
2W (Ta)
8 mOhm @ 12A, 10V
150°C (TJ)
Surface Mount
8-HSMT (3.2x3)
8-PowerVDFN
hot RTR020P02TL
Rohm Semiconductor

MOSFET P-CH 20V 2A TSMT3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 135 mOhm @ 2A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT3
  • Package / Case: SC-96
Paket: SC-96
Lager301.620
MOSFET (Metal Oxide)
20V
2A (Ta)
2.5V, 4.5V
2V @ 1mA
4.9nC @ 4.5V
430pF @ 10V
±12V
-
1W (Ta)
135 mOhm @ 2A, 4.5V
150°C (TJ)
Surface Mount
TSMT3
SC-96
hot RTR030P02TL
Rohm Semiconductor

MOSFET P-CH 20V 3A TSMT3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 75 mOhm @ 3A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT3
  • Package / Case: SC-96
Paket: SC-96
Lager2.122.752
MOSFET (Metal Oxide)
20V
3A (Ta)
2.5V, 4.5V
2V @ 1mA
9.3nC @ 4.5V
840pF @ 10V
±12V
-
1W (Ta)
75 mOhm @ 3A, 4.5V
150°C (TJ)
Surface Mount
TSMT3
SC-96
hot RRR015P03TL
Rohm Semiconductor

MOSFET P-CH 30V 1.5A TSMT3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 540mW (Ta)
  • Rds On (Max) @ Id, Vgs: 160 mOhm @ 1.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT3
  • Package / Case: SC-96
Paket: SC-96
Lager983.412
MOSFET (Metal Oxide)
30V
1.5A (Ta)
4V, 10V
2.5V @ 1mA
6.5nC @ 10V
230pF @ 10V
±20V
-
540mW (Ta)
160 mOhm @ 1.5A, 10V
150°C (TJ)
Surface Mount
TSMT3
SC-96
hot RTM002P02T2L
Rohm Semiconductor

MOSFET P-CH 20V 0.2A VMT3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 200mA, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: VMT3
  • Package / Case: SOT-723
Paket: SOT-723
Lager885.816
MOSFET (Metal Oxide)
20V
200mA (Ta)
2.5V, 4.5V
2V @ 1mA
-
50pF @ 10V
±12V
-
150mW (Ta)
1.5 Ohm @ 200mA, 4.5V
150°C (TJ)
Surface Mount
VMT3
SOT-723
hot RUF020N02TL
Rohm Semiconductor

MOSFET N-CH 20V 2A TUMT3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 320mW (Ta)
  • Rds On (Max) @ Id, Vgs: 105 mOhm @ 2A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TUMT3
  • Package / Case: 3-SMD, Flat Leads
Paket: 3-SMD, Flat Leads
Lager72.000
MOSFET (Metal Oxide)
20V
2A (Ta)
1.5V, 4.5V
1V @ 1mA
2nC @ 4.5V
180pF @ 10V
±10V
-
320mW (Ta)
105 mOhm @ 2A, 4.5V
150°C (TJ)
Surface Mount
TUMT3
3-SMD, Flat Leads
hot RJU002N06T106
Rohm Semiconductor

MOSFET N-CH 60V 200MA SOT-323

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 200mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2.3 Ohm @ 200mA, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: UMT3
  • Package / Case: SC-70, SOT-323
Paket: SC-70, SOT-323
Lager1.575.444
MOSFET (Metal Oxide)
60V
200mA (Ta)
2.5V, 4.5V
1.5V @ 1mA
-
18pF @ 10V
±12V
-
200mW (Ta)
2.3 Ohm @ 200mA, 4.5V
150°C (TJ)
Surface Mount
UMT3
SC-70, SOT-323
hot RUE003N02TL
Rohm Semiconductor

MOSFET N-CH 20V 300MA EMT3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1 Ohm @ 300mA, 4V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: EMT3
  • Package / Case: SC-75, SOT-416
Paket: SC-75, SOT-416
Lager1.504.116
MOSFET (Metal Oxide)
20V
300mA (Ta)
1.8V, 4V
1V @ 1mA
-
25pF @ 10V
±8V
-
150mW (Ta)
1 Ohm @ 300mA, 4V
150°C (TJ)
Surface Mount
EMT3
SC-75, SOT-416
hot RZE002P02TL
Rohm Semiconductor

MOSFET P-CH 20V 0.2A EMT3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 200mA, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: EMT3
  • Package / Case: SC-75, SOT-416
Paket: SC-75, SOT-416
Lager3.873.168
MOSFET (Metal Oxide)
20V
200mA (Ta)
1.2V, 4.5V
1V @ 100µA
1.4nC @ 4.5V
115pF @ 10V
±10V
-
150mW (Ta)
1.2 Ohm @ 200mA, 4.5V
150°C (TJ)
Surface Mount
EMT3
SC-75, SOT-416
hot RJU003N03T106
Rohm Semiconductor

MOSFET N-CH 30V 300MA SOT-323

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 24pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 200mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 300mA, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: UMT3
  • Package / Case: SC-70, SOT-323
Paket: SC-70, SOT-323
Lager1.508.232
MOSFET (Metal Oxide)
30V
300mA (Ta)
2.5V, 4.5V
1.5V @ 1mA
-
24pF @ 10V
±12V
-
200mW (Ta)
1.1 Ohm @ 300mA, 4.5V
150°C (TJ)
Surface Mount
UMT3
SC-70, SOT-323
hot RUE002N02TL
Rohm Semiconductor

MOSFET N-CH 20V .2A EMT3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 200mA, 2.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: EMT3
  • Package / Case: SC-75, SOT-416
Paket: SC-75, SOT-416
Lager324.000
MOSFET (Metal Oxide)
20V
200mA (Ta)
1.2V, 2.5V
1V @ 1mA
-
25pF @ 10V
±8V
-
150mW (Ta)
1.2 Ohm @ 200mA, 2.5V
150°C (TJ)
Surface Mount
EMT3
SC-75, SOT-416
hot RYM002N05T2CL
Rohm Semiconductor

MOSFET N-CH 50V 0.2A VMT3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 0.9V, 4.5V
  • Vgs(th) (Max) @ Id: 800mV @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: VMT3
  • Package / Case: SOT-723
Paket: SOT-723
Lager171.360
MOSFET (Metal Oxide)
50V
200mA (Ta)
0.9V, 4.5V
800mV @ 1mA
-
26pF @ 10V
±8V
-
150mW (Ta)
2.2 Ohm @ 200mA, 4.5V
150°C (TJ)
Surface Mount
VMT3
SOT-723
hot RSE002N06TL
Rohm Semiconductor

MOSFET N-CH 60V 0.25A EMT3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: EMT3
  • Package / Case: SC-75, SOT-416
Paket: SC-75, SOT-416
Lager36.000
MOSFET (Metal Oxide)
60V
250mA (Ta)
2.5V, 10V
2.3V @ 1mA
-
15pF @ 25V
±20V
-
150mW (Ta)
2.4 Ohm @ 250mA, 10V
150°C (TJ)
Surface Mount
EMT3
SC-75, SOT-416
hot RHU002N06T106
Rohm Semiconductor

MOSFET N-CH 60V 200MA SOT-323

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 200mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 200mA, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: UMT3
  • Package / Case: SC-70, SOT-323
Paket: SC-70, SOT-323
Lager1.231.968
MOSFET (Metal Oxide)
60V
200mA (Ta)
4V, 10V
-
4.4nC @ 10V
15pF @ 10V
±20V
-
200mW (Ta)
2.4 Ohm @ 200mA, 10V
150°C (TJ)
Surface Mount
UMT3
SC-70, SOT-323
hot RUM002N02T2L
Rohm Semiconductor

MOSFET N-CH 20V 0.2A VMT3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 200mA, 2.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: VMT3
  • Package / Case: SOT-723
Paket: SOT-723
Lager1.493.088
MOSFET (Metal Oxide)
20V
200mA (Ta)
1.2V, 2.5V
1V @ 1mA
-
25pF @ 10V
±8V
-
150mW (Ta)
1.2 Ohm @ 200mA, 2.5V
150°C (TJ)
Surface Mount
VMT3
SOT-723
hot RV1C001ZPT2L
Rohm Semiconductor

MOSFET P-CH 20V 0.1A VML0806

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 100mW (Ta)
  • Rds On (Max) @ Id, Vgs: 3.8 Ohm @ 100mA, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: VML0806
  • Package / Case: 3-SMD, No Lead
Paket: 3-SMD, No Lead
Lager96.000
MOSFET (Metal Oxide)
20V
100mA (Ta)
1.2V, 4.5V
1V @ 100µA
-
15pF @ 10V
±10V
-
100mW (Ta)
3.8 Ohm @ 100mA, 4.5V
150°C (TJ)
Surface Mount
VML0806
3-SMD, No Lead
hot RSC002P03T316
Rohm Semiconductor

MOSFET P-CH 30V 0.25A SST3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 200mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 250mA, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SST3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Paket: TO-236-3, SC-59, SOT-23-3
Lager456.372
MOSFET (Metal Oxide)
30V
250mA (Ta)
4V, 10V
2.5V @ 1mA
-
30pF @ 10V
±20V
-
200mW (Ta)
1.4 Ohm @ 250mA, 10V
150°C (TJ)
Surface Mount
SST3
TO-236-3, SC-59, SOT-23-3
hot RUC002N05T116
Rohm Semiconductor

MOSFET N-CH 50V 0.2A SST3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 200mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SST3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Paket: TO-236-3, SC-59, SOT-23-3
Lager1.218.000
MOSFET (Metal Oxide)
50V
200mA (Ta)
1.2V, 4.5V
1V @ 1mA
-
25pF @ 10V
±8V
-
200mW (Ta)
2.2 Ohm @ 200mA, 4.5V
150°C (TJ)
Surface Mount
SST3
TO-236-3, SC-59, SOT-23-3
hot RYE002N05TCL
Rohm Semiconductor

MOSFET N-CH 50V 0.2A EMT3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 0.9V, 4.5V
  • Vgs(th) (Max) @ Id: 800mV @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: EMT3
  • Package / Case: SC-75, SOT-416
Paket: SC-75, SOT-416
Lager2.160.000
MOSFET (Metal Oxide)
50V
200mA (Ta)
0.9V, 4.5V
800mV @ 1mA
-
26pF @ 10V
±8V
-
150mW (Ta)
2.2 Ohm @ 200mA, 4.5V
150°C (TJ)
Surface Mount
EMT3
SC-75, SOT-416
hot RK7002BMT116
Rohm Semiconductor

MOSFET N-CH 60V 0.25A SST3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 200mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SST3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Paket: TO-236-3, SC-59, SOT-23-3
Lager1.684.536
MOSFET (Metal Oxide)
60V
250mA (Ta)
2.5V, 10V
2.3V @ 1mA
-
15pF @ 25V
±20V
-
200mW (Ta)
2.4 Ohm @ 250mA, 10V
150°C (TJ)
Surface Mount
SST3
TO-236-3, SC-59, SOT-23-3
SCT3030KLGC11
Rohm Semiconductor

MOSFET NCH 1.2KV 72A TO247N

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
  • Gate Charge (Qg) (Max) @ Vgs: 131nC @ 18V
  • Input Capacitance (Ciss) (Max) @ Vds: 2222pF @ 800V
  • Vgs (Max): +22V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 339W (Tc)
  • Rds On (Max) @ Id, Vgs: 39 mOhm @ 27A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247N
  • Package / Case: TO-247-3
Paket: TO-247-3
Lager15.876
SiCFET (Silicon Carbide)
1200V
72A (Tc)
18V
5.6V @ 13.3mA
131nC @ 18V
2222pF @ 800V
+22V, -4V
-
339W (Tc)
39 mOhm @ 27A, 18V
175°C (TJ)
Through Hole
TO-247N
TO-247-3
SCT3022ALGC11
Rohm Semiconductor

MOSFET NCH 650V 93A TO247N

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5.6V @ 18.2mA
  • Gate Charge (Qg) (Max) @ Vgs: 133nC @ 18V
  • Input Capacitance (Ciss) (Max) @ Vds: 2208pF @ 500V
  • Vgs (Max): +22V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 339W (Tc)
  • Rds On (Max) @ Id, Vgs: 28.6 mOhm @ 36A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247N
  • Package / Case: TO-247-3
Paket: TO-247-3
Lager14.586
SiCFET (Silicon Carbide)
650V
93A (Tc)
18V
5.6V @ 18.2mA
133nC @ 18V
2208pF @ 500V
+22V, -4V
-
339W (Tc)
28.6 mOhm @ 36A, 18V
175°C (TJ)
Through Hole
TO-247N
TO-247-3
SCH2080KEC
Rohm Semiconductor

MOSFET N-CH 1200V 40A TO-247

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 4V @ 4.4mA
  • Gate Charge (Qg) (Max) @ Vgs: 106nC @ 18V
  • Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 800V
  • Vgs (Max): +22V, -6V
  • FET Feature: -
  • Power Dissipation (Max): 262W (Tc)
  • Rds On (Max) @ Id, Vgs: 117 mOhm @ 10A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
Paket: TO-247-3
Lager22.500
SiCFET (Silicon Carbide)
1200V
40A (Tc)
18V
4V @ 4.4mA
106nC @ 18V
1850pF @ 800V
+22V, -6V
-
262W (Tc)
117 mOhm @ 10A, 18V
175°C (TJ)
Through Hole
TO-247
TO-247-3
SCT3040KLGC11
Rohm Semiconductor

MOSFET NCH 1.2KV 55A TO247N

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5.6V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 107nC @ 18V
  • Input Capacitance (Ciss) (Max) @ Vds: 1337pF @ 800V
  • Vgs (Max): +22V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 262W (Tc)
  • Rds On (Max) @ Id, Vgs: 52 mOhm @ 20A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247N
  • Package / Case: TO-247-3
Paket: TO-247-3
Lager16.116
SiCFET (Silicon Carbide)
1200V
55A (Tc)
18V
5.6V @ 10mA
107nC @ 18V
1337pF @ 800V
+22V, -4V
-
262W (Tc)
52 mOhm @ 20A, 18V
175°C (TJ)
Through Hole
TO-247N
TO-247-3