Page 117 - Toshiba Semiconductor and Storage Produkte

Teilenummer	Hersteller	Beschreibung	Paket	Lager
TK12P60W,RVQ	Toshiba Semiconductor and Storage	MOSFET N CH 600V 11.5A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.7V @ 600µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 300V Vgs (Max): ±30V FET Feature: Super Junction Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 340 mOhm @ 5.8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Paket: TO-252-3, DPak (2 Leads + Tab), SC-63	Lager240.000
SSM3K7002BSU,LF	Toshiba Semiconductor and Storage	MOSFET N-CH 60V .2A USM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 500mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: USM Package / Case: SC-70, SOT-323	Paket: SC-70, SOT-323	Lager926.040
TK100A10N1,S4X	Toshiba Semiconductor and Storage	MOSFET N-CH 100V 100A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 50A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack, Isolated Tab	Paket: TO-220-3 Full Pack, Isolated Tab	Lager6.216
2SC4682,T6F(J	Toshiba Semiconductor and Storage	TRANS NPN 3A 15V TO226-3 Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 15V Vce Saturation (Max) @ Ib, Ic: 500mV @ 30mA, 3A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 800 @ 500mA, 1V Power - Max: 900mW Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	Paket: TO-226-3, TO-92-3 Long Body	Lager7.728
2SC2655-Y(T6ND2,AF	Toshiba Semiconductor and Storage	TRANS NPN 2A 50V TO226-3 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	Paket: TO-226-3, TO-92-3 Long Body	Lager5.712
1SS193,LF	Toshiba Semiconductor and Storage	DIODE GEN PURP 80V 100MA SMINI Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 500nA @ 80V Capacitance @ Vr, F: 3pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini Operating Temperature - Junction: 125°C (Max)	Paket: TO-236-3, SC-59, SOT-23-3	Lager157.440
TA58M06S,SUMISQ(M	Toshiba Semiconductor and Storage	IC REG LINEAR 500MA LSTM Output Configuration: - Output Type: - Number of Regulators: 1 Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 500mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: -40°C ~ 105°C Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: LSTM	Paket: TO-220-3 Full Pack	Lager2.100
TA58M08F(TE16L1,NQ	Toshiba Semiconductor and Storage	IC REG LINEAR 8V 500MA PW-MOLD Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 29V Voltage - Output (Min/Fixed): 8V Voltage - Output (Max): - Voltage Dropout (Max): 0.65V @ 500mA Current - Output: 500mA Current - Quiescent (Iq): - Current - Supply (Max): 1mA ~ 80mA PSRR: - Control Features: - Protection Features: Over Current, Over Temperature, Reverse Polarity Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: PW-MOLD	Paket: TO-252-3, DPak (2 Leads + Tab), SC-63	Lager4.416
TA48M025F(T6L1,SNQ	Toshiba Semiconductor and Storage	IC REG LINEAR 2.5V 500MA PW-MOLD Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 29V Voltage - Output (Min/Fixed): 2.5V Voltage - Output (Max): - Voltage Dropout (Max): 0.65V @ 500mA Current - Output: 500mA Current - Quiescent (Iq): - Current - Supply (Max): 1.4mA ~ 25mA PSRR: 72dB (120Hz) Control Features: - Protection Features: Over Current, Over Temperature, Over Voltage, Reverse Polarity Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: PW-MOLD	Paket: TO-252-3, DPak (2 Leads + Tab), SC-63	Lager2.768
TBD62783AFNG	Toshiba Semiconductor and Storage	IC LOAD SWITCH 18SSOP Switch Type: General Purpose Number of Outputs: 8 Ratio - Input:Output: 1:1 Output Configuration: High Side Output Type: N-Channel Interface: On/Off Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 500mA Rds On (Typ): - Input Type: Non-Inverting Features: - Fault Protection: - Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 18-LSSOP (0.173", 4.40mm Width) Supplier Device Package: 18-SSOP	Paket: 18-LSSOP (0.173", 4.40mm Width)	Lager7.264
TC62D776CFG,EL	Toshiba Semiconductor and Storage	IC LED DRIVER LINEAR 90MA 24SSOP Type: Linear Topology: Shift Register Internal Switch(s): Yes Number of Outputs: 16 Voltage - Supply (Min): 3V Voltage - Supply (Max): 5.5V Voltage - Output: 17V Current - Output / Channel: 90mA Frequency: - Dimming: - Applications: - Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: - Supplier Device Package: 24-SSOP	Paket: -	Lager6.448
TH58NVG3S0HTAI0	Toshiba Semiconductor and Storage	IC EEPROM 8GBIT 25NS 48TSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM - NAND Memory Size: 8Gb (1G x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	Paket: 48-TFSOP (0.724", 18.40mm Width)	Lager4.160
TC74VHC04FK(EL,K)	Toshiba Semiconductor and Storage	IC INVERTER HEX 14VSSOP Logic Type: Inverter Number of Circuits: 6 Number of Inputs: 6 Features: - Voltage - Supply: 2 V ~ 5.5 V Current - Quiescent (Max): 2µA Current - Output High, Low: 8mA, 8mA Logic Level - Low: - Logic Level - High: - Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: 14-VSSOP, US14 Package / Case: 14-VFSOP (0.118", 3.00mm Width)	Paket: 14-VFSOP (0.118", 3.00mm Width)	Lager23.490
TC74LCX244F(EL,K,F	Toshiba Semiconductor and Storage	IC BUFF/DVR DUAL LV 20SOP Logic Type: Buffer, Non-Inverting Number of Elements: 2 Number of Bits per Element: 4 Input Type: - Output Type: Push-Pull Current - Output High, Low: 24mA, 24mA Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 20-SOIC (0.209", 5.30mm Width) Supplier Device Package: 20-SOP	Paket: 20-SOIC (0.209", 5.30mm Width)	Lager22.380
DF5A3.3F(TE85L,F)	Toshiba Semiconductor and Storage	TVS DIODE 1VWM SMV Type: Zener Unidirectional Channels: 4 Bidirectional Channels: - Voltage - Reverse Standoff (Typ): 1V Voltage - Breakdown (Min): 3.1V Voltage - Clamping (Max) @ Ipp: - Current - Peak Pulse (10/1000µs): - Power - Peak Pulse: - Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: 115pF @ 1MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	Paket: SC-74A, SOT-753	Lager6.948
DF3A6.2FUTE85LF	Toshiba Semiconductor and Storage	TVS DIODE 3VWM USM Type: Zener Unidirectional Channels: 2 Bidirectional Channels: - Voltage - Reverse Standoff (Typ): 3V Voltage - Breakdown (Min): 5.8V Voltage - Clamping (Max) @ Ipp: - Current - Peak Pulse (10/1000µs): - Power - Peak Pulse: - Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: 55pF @ 1MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	Paket: SC-70, SOT-323	Lager21.966
TLP4192G(F)	Toshiba Semiconductor and Storage	PHOTORELAY 350V DUAL 6SOP Circuit: SPST-NC (1 Form B) Output Type: AC, DC On-State Resistance (Max): 50 Ohm Load Current: 90mA Voltage - Input: 1.15VDC Voltage - Load: 0 ~ 350 V Mounting Type: Surface Mount Termination Style: Gull Wing Package / Case: 6-SOP (0.173", 4.40mm) Supplier Device Package: 6-SOP (2.54mm) Relay Type: Relay	Paket: 6-SOP (0.173", 4.40mm)	Lager7.722
TLP3217(TP15,F)	Toshiba Semiconductor and Storage	PHOTORELAY MOSFET OUT 5MA 4-SSOP Circuit: SPST-NO (1 Form A) Output Type: AC, DC On-State Resistance (Max): 12 Ohm Load Current: 120mA Voltage - Input: 1.15VDC Voltage - Load: 0 ~ 80 V Mounting Type: Surface Mount Termination Style: SMD (SMT) Tab Package / Case: 4-SMD (0.165", 4.20mm) Supplier Device Package: 4-SSOP Relay Type: Relay	Paket: 4-SMD (0.165", 4.20mm)	Lager6.426
TLP183(GRL-TPL,E	Toshiba Semiconductor and Storage	OPTOISO 3.75KV TRANS 6-SO 4 LEAD Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 500µA Current Transfer Ratio (Max): 200% @ 500µA Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55°C ~ 125°C Mounting Type: Surface Mount Package / Case: 6-SMD (4 Leads), Gull Wing Supplier Device Package: 6-SO, 4 Lead	Paket: 6-SMD (4 Leads), Gull Wing	Lager8.964
TC74LCX32FT-EL	Toshiba Semiconductor and Storage	IC GATE OR 4CH 2-INP 14-TSSOP Logic Type: OR Gate Number of Circuits: 4 Number of Inputs: 2 Features: - Voltage - Supply: 1.65V ~ 3.6V Current - Quiescent (Max): 10 µA Current - Output High, Low: 24mA, 24mA Logic Level - Low: 0.8V Logic Level - High: 2V Max Propagation Delay @ V, Max CL: 5.5ns @ 3.3V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: 14-TSSOP Package / Case: 14-TSSOP (0.173", 4.40mm Width)	Paket: -	Request a Quote
TPD7107F-BXH	Toshiba Semiconductor and Storage	IPD MOSFET IC WSON10 PD=1.84W VD Driven Configuration: High-Side Channel Type: Single Number of Drivers: 1 Gate Type: N-Channel MOSFET Voltage - Supply: 5.75V ~ 26V Logic Voltage - VIL, VIH: 0.6V, 2.4V Current - Peak Output (Source, Sink): 5mA Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): - Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 10-WFDFN Exposed Pad Supplier Device Package: 10-WSON (3x3)	Paket: -	Lager11.985
RN4911FE-LXHF-CT	Toshiba Semiconductor and Storage	AUTO AEC-Q 2-IN-1 (POINT-SYMMETR Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz, 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	Paket: -	Lager24.000
TK110A65Z-S4X	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 24A TO220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 24A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1.02mA Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	Paket: -	Lager126
RN1911FE-LF-CT	Toshiba Semiconductor and Storage	NPN X 2 BRT Q1BSR=10KOHM Q1BER=I Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	Paket: -	Lager540
RN4991FE-LF-CT	Toshiba Semiconductor and Storage	NPN + PNP BRT Q1BSR10KOHM Q1BERI Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz, 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	Paket: -	Request a Quote
TW083N65C-S1F	Toshiba Semiconductor and Storage	G3 650V SIC-MOSFET TO-247 83MOH FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 5V @ 600µA Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 873 pF @ 400 V Vgs (Max): +25V, -10V FET Feature: - Power Dissipation (Max): 111W (Tc) Rds On (Max) @ Id, Vgs: 113mOhm @ 15A, 18V Operating Temperature: 175°C Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Paket: -	Lager426
TRS20N65FB-S1F-S	Toshiba Semiconductor and Storage	DIODE ARR SIC SCHOT 650V TO247 Diode Configuration: 1 Pair Common Cathode Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io) (per Diode): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 90 µA @ 650 V Operating Temperature - Junction: 175°C (Max) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	Paket: -	Request a Quote
TCR2EN12-LF-SE	Toshiba Semiconductor and Storage	LDO REG VOUT=1.2V IOUT=200MA Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 1.2V Voltage - Output (Max): - Voltage Dropout (Max): 0.55V @ 150mA Current - Output: 200mA Current - Quiescent (Iq): 60 µA Current - Supply (Max): - PSRR: - Control Features: Enable Protection Features: Over Current Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-XFDFN Exposed Pad Supplier Device Package: 4-SDFN (0.8x0.8)	Paket: -	Lager29.859

TK12P60W,RVQ

Toshiba Semiconductor and Storage

MOSFET N CH 600V 11.5A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.7V @ 600µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 300V
Vgs (Max): ±30V
FET Feature: Super Junction
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 340 mOhm @ 5.8A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paket: TO-252-3, DPak (2 Leads + Tab), SC-63

Lager240.000

SSM3K7002BSU,LF

Toshiba Semiconductor and Storage

MOSFET N-CH 60V .2A USM

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 500mA, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: USM
Package / Case: SC-70, SOT-323

Paket: SC-70, SOT-323

Lager926.040

TK100A10N1,S4X

Toshiba Semiconductor and Storage

MOSFET N-CH 100V 100A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 50V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 50A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack, Isolated Tab

Paket: TO-220-3 Full Pack, Isolated Tab

Lager6.216

2SC4682,T6F(J

Toshiba Semiconductor and Storage

TRANS NPN 3A 15V TO226-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 15V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 30mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 800 @ 500mA, 1V
Power - Max: 900mW
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

Paket: TO-226-3, TO-92-3 Long Body

Lager7.728

2SC2655-Y(T6ND2,AF

Toshiba Semiconductor and Storage

TRANS NPN 2A 50V TO226-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Power - Max: 900mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

Paket: TO-226-3, TO-92-3 Long Body

Lager5.712

1SS193,LF

Toshiba Semiconductor and Storage

DIODE GEN PURP 80V 100MA SMINI

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 500nA @ 80V
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)

Paket: TO-236-3, SC-59, SOT-23-3

Lager157.440

TA58M06S,SUMISQ(M

Toshiba Semiconductor and Storage

IC REG LINEAR 500MA LSTM

Output Configuration: -
Output Type: -
Number of Regulators: 1
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 500mA
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -40°C ~ 105°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: LSTM

Paket: TO-220-3 Full Pack

Lager2.100

TA58M08F(TE16L1,NQ

Toshiba Semiconductor and Storage

IC REG LINEAR 8V 500MA PW-MOLD

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 29V
Voltage - Output (Min/Fixed): 8V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.65V @ 500mA
Current - Output: 500mA
Current - Quiescent (Iq): -
Current - Supply (Max): 1mA ~ 80mA
PSRR: -
Control Features: -
Protection Features: Over Current, Over Temperature, Reverse Polarity
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PW-MOLD

Paket: TO-252-3, DPak (2 Leads + Tab), SC-63

Lager4.416

TA48M025F(T6L1,SNQ

Toshiba Semiconductor and Storage

IC REG LINEAR 2.5V 500MA PW-MOLD

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 29V
Voltage - Output (Min/Fixed): 2.5V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.65V @ 500mA
Current - Output: 500mA
Current - Quiescent (Iq): -
Current - Supply (Max): 1.4mA ~ 25mA
PSRR: 72dB (120Hz)
Control Features: -
Protection Features: Over Current, Over Temperature, Over Voltage, Reverse Polarity
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PW-MOLD

Paket: TO-252-3, DPak (2 Leads + Tab), SC-63

Lager2.768

TBD62783AFNG

Toshiba Semiconductor and Storage

IC LOAD SWITCH 18SSOP

Switch Type: General Purpose
Number of Outputs: 8
Ratio - Input:Output: 1:1
Output Configuration: High Side
Output Type: N-Channel
Interface: On/Off
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Rds On (Typ): -
Input Type: Non-Inverting
Features: -
Fault Protection: -
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 18-LSSOP (0.173", 4.40mm Width)
Supplier Device Package: 18-SSOP

Paket: 18-LSSOP (0.173", 4.40mm Width)

Lager7.264

TC62D776CFG,EL

Toshiba Semiconductor and Storage

IC LED DRIVER LINEAR 90MA 24SSOP

Type: Linear
Topology: Shift Register
Internal Switch(s): Yes
Number of Outputs: 16
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Voltage - Output: 17V
Current - Output / Channel: 90mA
Frequency: -
Dimming: -
Applications: -
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: -
Supplier Device Package: 24-SSOP

Paket: -

Lager6.448

TH58NVG3S0HTAI0

Toshiba Semiconductor and Storage

IC EEPROM 8GBIT 25NS 48TSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM - NAND
Memory Size: 8Gb (1G x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I

Paket: 48-TFSOP (0.724", 18.40mm Width)

Lager4.160

TC74VHC04FK(EL,K)

Toshiba Semiconductor and Storage

IC INVERTER HEX 14VSSOP

Logic Type: Inverter
Number of Circuits: 6
Number of Inputs: 6
Features: -
Voltage - Supply: 2 V ~ 5.5 V
Current - Quiescent (Max): 2µA
Current - Output High, Low: 8mA, 8mA
Logic Level - Low: -
Logic Level - High: -
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: 14-VSSOP, US14
Package / Case: 14-VFSOP (0.118", 3.00mm Width)

Paket: 14-VFSOP (0.118", 3.00mm Width)

Lager23.490

TC74LCX244F(EL,K,F

Toshiba Semiconductor and Storage

IC BUFF/DVR DUAL LV 20SOP

Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Number of Bits per Element: 4
Input Type: -
Output Type: Push-Pull
Current - Output High, Low: 24mA, 24mA
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 20-SOP

Paket: 20-SOIC (0.209", 5.30mm Width)

Lager22.380

DF5A3.3F(TE85L,F)

Toshiba Semiconductor and Storage

TVS DIODE 1VWM SMV

Type: Zener
Unidirectional Channels: 4
Bidirectional Channels: -
Voltage - Reverse Standoff (Typ): 1V
Voltage - Breakdown (Min): 3.1V
Voltage - Clamping (Max) @ Ipp: -
Current - Peak Pulse (10/1000µs): -
Power - Peak Pulse: -
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: 115pF @ 1MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: SMV

Paket: SC-74A, SOT-753

Lager6.948

DF3A6.2FUTE85LF

Toshiba Semiconductor and Storage

TVS DIODE 3VWM USM

Type: Zener
Unidirectional Channels: 2
Bidirectional Channels: -
Voltage - Reverse Standoff (Typ): 3V
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: -
Current - Peak Pulse (10/1000µs): -
Power - Peak Pulse: -
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: 55pF @ 1MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: USM

Paket: SC-70, SOT-323

Lager21.966

TLP4192G(F)

Toshiba Semiconductor and Storage

PHOTORELAY 350V DUAL 6SOP

Circuit: SPST-NC (1 Form B)
Output Type: AC, DC
On-State Resistance (Max): 50 Ohm
Load Current: 90mA
Voltage - Input: 1.15VDC
Voltage - Load: 0 ~ 350 V
Mounting Type: Surface Mount
Termination Style: Gull Wing
Package / Case: 6-SOP (0.173", 4.40mm)
Supplier Device Package: 6-SOP (2.54mm)
Relay Type: Relay

Paket: 6-SOP (0.173", 4.40mm)

Lager7.722

TLP3217(TP15,F)

Toshiba Semiconductor and Storage

PHOTORELAY MOSFET OUT 5MA 4-SSOP

Circuit: SPST-NO (1 Form A)
Output Type: AC, DC
On-State Resistance (Max): 12 Ohm
Load Current: 120mA
Voltage - Input: 1.15VDC
Voltage - Load: 0 ~ 80 V
Mounting Type: Surface Mount
Termination Style: SMD (SMT) Tab
Package / Case: 4-SMD (0.165", 4.20mm)
Supplier Device Package: 4-SSOP
Relay Type: Relay

Paket: 4-SMD (0.165", 4.20mm)

Lager6.426

TLP183(GRL-TPL,E

Toshiba Semiconductor and Storage

OPTOISO 3.75KV TRANS 6-SO 4 LEAD

Number of Channels: 1
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 500µA
Current Transfer Ratio (Max): 200% @ 500µA
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Input Type: DC
Output Type: Transistor
Voltage - Output (Max): 80V
Current - Output / Channel: 50mA
Voltage - Forward (Vf) (Typ): 1.25V
Current - DC Forward (If) (Max): 50mA
Vce Saturation (Max): 300mV
Operating Temperature: -55°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-SMD (4 Leads), Gull Wing
Supplier Device Package: 6-SO, 4 Lead

Paket: 6-SMD (4 Leads), Gull Wing

Lager8.964

TC74LCX32FT-EL

Toshiba Semiconductor and Storage

IC GATE OR 4CH 2-INP 14-TSSOP

Logic Type: OR Gate
Number of Circuits: 4
Number of Inputs: 2
Features: -
Voltage - Supply: 1.65V ~ 3.6V
Current - Quiescent (Max): 10 µA
Current - Output High, Low: 24mA, 24mA
Logic Level - Low: 0.8V
Logic Level - High: 2V
Max Propagation Delay @ V, Max CL: 5.5ns @ 3.3V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: 14-TSSOP
Package / Case: 14-TSSOP (0.173", 4.40mm Width)

Paket: -

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TPD7107F-BXH

Toshiba Semiconductor and Storage

IPD MOSFET IC WSON10 PD=1.84W VD

Driven Configuration: High-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Voltage - Supply: 5.75V ~ 26V
Logic Voltage - VIL, VIH: 0.6V, 2.4V
Current - Peak Output (Source, Sink): 5mA
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): -
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-WFDFN Exposed Pad
Supplier Device Package: 10-WSON (3x3)

Paket: -

Lager11.985

RN4911FE-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYMMETR

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz, 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

Paket: -

Lager24.000

TK110A65Z-S4X

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 24A TO220SIS

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1.02mA
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V
Operating Temperature: 150°C
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack

Paket: -

Lager126

RN1911FE-LF-CT

Toshiba Semiconductor and Storage

NPN X 2 BRT Q1BSR=10KOHM Q1BER=I

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

Paket: -

Lager540

RN4991FE-LF-CT

Toshiba Semiconductor and Storage

NPN + PNP BRT Q1BSR10KOHM Q1BERI

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz, 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

Paket: -

Request a Quote

TW083N65C-S1F

Toshiba Semiconductor and Storage

G3 650V SIC-MOSFET TO-247 83MOH

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs(th) (Max) @ Id: 5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 873 pF @ 400 V
Vgs (Max): +25V, -10V
FET Feature: -
Power Dissipation (Max): 111W (Tc)
Rds On (Max) @ Id, Vgs: 113mOhm @ 15A, 18V
Operating Temperature: 175°C
Mounting Type: Through Hole
Supplier Device Package: TO-247
Package / Case: TO-247-3

Paket: -

Lager426

TRS20N65FB-S1F-S

Toshiba Semiconductor and Storage

DIODE ARR SIC SCHOT 650V TO247

Diode Configuration: 1 Pair Common Cathode
Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io) (per Diode): 10A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Operating Temperature - Junction: 175°C (Max)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

Paket: -

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TCR2EN12-LF-SE

Toshiba Semiconductor and Storage

LDO REG VOUT=1.2V IOUT=200MA

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 1.2V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.55V @ 150mA
Current - Output: 200mA
Current - Quiescent (Iq): 60 µA
Current - Supply (Max): -
PSRR: -
Control Features: Enable
Protection Features: Over Current
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-XFDFN Exposed Pad
Supplier Device Package: 4-SDFN (0.8x0.8)

Paket: -

Lager29.859