Page 120 - Toshiba Semiconductor and Storage Produkte

Teilenummer	Hersteller	Beschreibung	Paket	Lager
2SK2995(F)	Toshiba Semiconductor and Storage	MOSFET N-CH 250V 30A TO-3PN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 132nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 68 mOhm @ 15A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P(N)IS Package / Case: TO-3P-3, SC-65-3	Paket: TO-3P-3, SC-65-3	Lager5.440
TK2P60D(TE16L1,NQ)	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 2A PW-MOLD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 4.3 Ohm @ 1A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PW-MOLD Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Paket: TO-252-3, DPak (2 Leads + Tab), SC-63	Lager2.160
2SA965-Y(T6CANO,FM	Toshiba Semiconductor and Storage	TRANS PNP 800MA 120V TO226-3 Transistor Type: PNP Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V Power - Max: 900mW Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: LSTM	Paket: TO-226-3, TO-92-3 Long Body	Lager6.208
2SC2712-GR,LF	Toshiba Semiconductor and Storage	TRANS NPN 50V 0.15A S-MINI Transistor Type: NPN Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V Power - Max: 150mW Frequency - Transition: 80MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	Paket: TO-236-3, SC-59, SOT-23-3	Lager28.122
RN1105CT(TPL3)	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 0.05W CST3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 20V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 50mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: CST3	Paket: SC-101, SOT-883	Lager2.736
HN2S03T(TE85L)	Toshiba Semiconductor and Storage	DIODE ARRAY SCHOTTKY 20V TESQ Diode Configuration: 2 Independent Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io) (per Diode): 50mA Voltage - Forward (Vf) (Max) @ If: 550mV @ 50mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500nA @ 20V Operating Temperature - Junction: 125°C (Max) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: TESQ	Paket: 4-SMD, Flat Leads	Lager1.824.000
TRS24N65D,S1F	Toshiba Semiconductor and Storage	DIODE ARRAY SCHOTTKY 650V TO247 Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io) (per Diode): 12A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 12A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 90µA @ 650V Operating Temperature - Junction: 175°C (Max) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	Paket: TO-247-3	Lager3.600
TA58L05S,ALPSAQ(J	Toshiba Semiconductor and Storage	IC REG LINEAR 250MA 3HSIP Output Configuration: - Output Type: - Number of Regulators: 1 Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 250mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: -40°C ~ 105°C Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: 3-HSIP	Paket: TO-220-3 Full Pack	Lager6.416
TCR2EF12,LM(CT	Toshiba Semiconductor and Storage	IC REG LINEAR 1.2V 200MA SMV Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 1.2V Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 200mA Current - Quiescent (Iq): - Current - Supply (Max): 60µA PSRR: 73dB (1kHz) Control Features: Enable Protection Features: Over Current Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	Paket: SC-74A, SOT-753	Lager153.318
TB7102AF(TE85L,F)	Toshiba Semiconductor and Storage	IC REG BUCK ADJ 1A SYNC 8SON Function: Step-Down Output Configuration: Positive Topology: Buck Output Type: Adjustable Number of Outputs: 1 Voltage - Input (Min): 2.7V Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 0.8V Voltage - Output (Max): 4.5V Current - Output: 1A Frequency - Switching: 1MHz Synchronous Rectifier: Yes Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: PS-8 (2.9x2.4)	Paket: 8-SMD, Flat Lead	Lager7.712
TC62D722CFG,EL	Toshiba Semiconductor and Storage	IC LED DRVR CONST CURR 24SSOP Type: Linear Topology: Shift Register Internal Switch(s): Yes Number of Outputs: 16 Voltage - Supply (Min): 3V Voltage - Supply (Max): 5.5V Voltage - Output: 17V Current - Output / Channel: 90mA Frequency: - Dimming: - Applications: - Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-SOP (0.236", 6.00mm Width) Supplier Device Package: 24-SSOP	Paket: 24-SOP (0.236", 6.00mm Width)	Lager4.176
TC74AC04FTEL	Toshiba Semiconductor and Storage	IC INVERTER HEX 14TSSOP Logic Type: Inverter Number of Circuits: 6 Number of Inputs: 6 Features: - Voltage - Supply: 2 V ~ 5.5 V Current - Quiescent (Max): 4µA Current - Output High, Low: 24mA, 24mA Logic Level - Low: 0.5 V ~ 1.65 V Logic Level - High: 1.5 V ~ 3.85 V Max Propagation Delay @ V, Max CL: 6.6ns @ 5V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: 14-TSSOP Package / Case: 14-TSSOP (0.173", 4.40mm Width)	Paket: 14-TSSOP (0.173", 4.40mm Width)	Lager6.976
74HC132D(BJ)	Toshiba Semiconductor and Storage	IC GATE NAND 4CH 2-INP 14SOIC Logic Type: NAND Gate Number of Circuits: 4 Number of Inputs: 2 Features: Schmitt Trigger Voltage - Supply: 2 V ~ 6 V Current - Quiescent (Max): 1µA Current - Output High, Low: 5.2mA, 5.2mA Logic Level - Low: - Logic Level - High: - Max Propagation Delay @ V, Max CL: 19ns @ 5V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: 14-SOIC Package / Case: 14-SOIC (0.154", 3.90mm Width)	Paket: 14-SOIC (0.154", 3.90mm Width)	Lager26.298
TC74VHC540FTELM	Toshiba Semiconductor and Storage	IC INVERTER 8-INPUT 20TSSOP Logic Type: Buffer, Inverting Number of Elements: 1 Number of Bits per Element: 8 Input Type: - Output Type: Push-Pull Current - Output High, Low: 8mA, 8mA Voltage - Supply: 2 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 20-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 20-TSSOP	Paket: 20-TSSOP (0.173", 4.40mm Width)	Lager6.592
TL1F2-DW0,L	Toshiba Semiconductor and Storage	LED LETERAS COOL WHT 6500K 2SMD Color: White, Cool CCT (K): 6500K Flux @ 85°C, Current - Test: - Flux @ 25°C, Current - Test: 133 lm (120 lm ~ 145 lm) Current - Test: 350mA Voltage - Forward (Vf) (Typ): 2.85V Lumens/Watt @ Current - Test: 133 lm/W CRI (Color Rendering Index): 70 Current - Max: 550mA Viewing Angle: 120° Mounting Type: Surface Mount Package / Case: 2020 (5050 Metric) Supplier Device Package: 6450 Size / Dimension: 0.197" L x 0.197" W (5.00mm x 5.00mm) Height - Seated (Max): 0.057" (1.45mm)	Paket: 2020 (5050 Metric)	Lager3.726
DF3D36FU,LF	Toshiba Semiconductor and Storage	ESD PROTECTION DIODE (BI-DIRECTI Type: - Unidirectional Channels: - Bidirectional Channels: 2 Voltage - Reverse Standoff (Typ): 28V Voltage - Breakdown (Min): 32V Voltage - Clamping (Max) @ Ipp: - Current - Peak Pulse (10/1000µs): - Power - Peak Pulse: - Power Line Protection: No Applications: Automotive Capacitance @ Frequency: 7pF @ 1MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	Paket: SC-70, SOT-323	Lager47.022
TCS40DLR,LF	Toshiba Semiconductor and Storage	MAGNETIC SWITCH OMNIPOLAR SOT23F Function: Omnipolar Switch Technology: Hall Effect Polarization: Either Sensing Range: ±4.4mT Trip, ±0.9mT Release Test Condition: 25°C Voltage - Supply: 2.3 V ~ 5.5 V Current - Supply (Max): 1.6mA (Typ) Current - Output (Max): 5mA Output Type: Open Drain Features: - Operating Temperature: -40°C ~ 85°C (TA) Package / Case: SOT-23-3 Flat Leads Supplier Device Package: SOT-23F	Paket: SOT-23-3 Flat Leads	Lager589.350
TLP161J(TPR,U,C,F)	Toshiba Semiconductor and Storage	OPTOISOLATOR 2.5KV TRIAC 6MFSOP Output Type: Triac Zero Crossing Circuit: Yes Number of Channels: 1 Voltage - Isolation: 2500Vrms Voltage - Off State: 600V Static dV/dt (Min): 200V/µs Current - LED Trigger (Ift) (Max): 10mA Current - On State (It (RMS)) (Max): 70mA Current - Hold (Ih): 600µA (Typ) Turn On Time: - Voltage - Forward (Vf) (Typ): 1.15V Current - DC Forward (If) (Max): 50mA Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.173", 4.40mm Width) 4 Leads Supplier Device Package: 6-MFSOP, 4 Lead Approvals: UR	Paket: 6-SOIC (0.173", 4.40mm Width) 4 Leads	Lager2.700
TC7SET126F,LJ(CT	Toshiba Semiconductor and Storage	IC BUFFER NON-INVERT 5.5V SMV Logic Type: Buffer, Non-Inverting Number of Elements: 1 Number of Bits per Element: 1 Input Type: - Output Type: 3-State Current - Output High, Low: 8mA, 8mA Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	Paket: SC-74A, SOT-753	Lager4.128
TCR2LE15,LM(CT	Toshiba Semiconductor and Storage	200MA LDO VOUT1.5V DROPOUT220MV Output Configuration: - Output Type: - Number of Regulators: - Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: - Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Paket: -	Lager6.816
RN1907FE-LF-CT	Toshiba Semiconductor and Storage	TRANS 2NPN PREBIAS 0.1W ES6 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	Paket: -	Request a Quote
2SA1832-Y-LXHF	Toshiba Semiconductor and Storage	TRANS PNP 50V 0.15A SSM Transistor Type: PNP Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 120 mW Frequency - Transition: 80MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	Paket: -	Lager2.070
TPH4R803PL-LQ	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 48A 8SOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 830mW (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 24A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	Paket: -	Lager14.982
CMZ36-TE12L-Q-M	Toshiba Semiconductor and Storage	PB-F ZENER DIODE M-FLAT MOQ=3000 Voltage - Zener (Nom) (Vz): 36 V Tolerance: ±10% Power - Max: 2 W Impedance (Max) (Zzt): 30 Ohms Current - Reverse Leakage @ Vr: 10 µA @ 28.8 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: M-FLAT (2.4x3.8)	Paket: -	Lager14.358
TC74LCX74FT-EL	Toshiba Semiconductor and Storage	IC D-TYPE POS TRG DUAL 14TSSOP Function: Set(Preset) and Reset Type: D-Type Output Type: Complementary Number of Elements: 2 Number of Bits per Element: 1 Clock Frequency: 150 MHz Max Propagation Delay @ V, Max CL: 7ns @ 3.3V, 50pF Trigger Type: Positive Edge Current - Output High, Low: 24mA, 24mA Voltage - Supply: 1.65V ~ 3.6V Current - Quiescent (Iq): 10 µA Input Capacitance: 7 pF Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 14-TSSOP (0.173", 4.40mm Width)	Paket: -	Request a Quote
TK110P10PL-RQ	Toshiba Semiconductor and Storage	X35 PB-F POWER MOSFET TRANSISTOR FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 300µA Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 10.6mOhm @ 20A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Paket: -	Lager4.038
RN4905-LXHF-CT	Toshiba Semiconductor and Storage	AUTO AEC-Q 2-IN-1 (POINT-SYM) PN Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz, 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	Paket: -	Lager9.000
2SC2712-BL-LXHF	Toshiba Semiconductor and Storage	TRANS NPN 50V 0.15A SMINI Transistor Type: NPN Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V Power - Max: 200 mW Frequency - Transition: 80MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	Paket: -	Lager14.247

2SK2995(F)

Toshiba Semiconductor and Storage

MOSFET N-CH 250V 30A TO-3PN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 132nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 68 mOhm @ 15A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3P(N)IS
Package / Case: TO-3P-3, SC-65-3

Paket: TO-3P-3, SC-65-3

Lager5.440

TK2P60D(TE16L1,NQ)

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 2A PW-MOLD

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 4.3 Ohm @ 1A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PW-MOLD
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paket: TO-252-3, DPak (2 Leads + Tab), SC-63

Lager2.160

2SA965-Y(T6CANO,FM

Toshiba Semiconductor and Storage

TRANS PNP 800MA 120V TO226-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
Power - Max: 900mW
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: LSTM

Paket: TO-226-3, TO-92-3 Long Body

Lager6.208

2SC2712-GR,LF

Toshiba Semiconductor and Storage

TRANS NPN 50V 0.15A S-MINI

Transistor Type: NPN
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Power - Max: 150mW
Frequency - Transition: 80MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini

Paket: TO-236-3, SC-59, SOT-23-3

Lager28.122

RN1105CT(TPL3)

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.05W CST3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 20V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 50mW
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: CST3

Paket: SC-101, SOT-883

Lager2.736

HN2S03T(TE85L)

Toshiba Semiconductor and Storage

DIODE ARRAY SCHOTTKY 20V TESQ

Diode Configuration: 2 Independent
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io) (per Diode): 50mA
Voltage - Forward (Vf) (Max) @ If: 550mV @ 50mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500nA @ 20V
Operating Temperature - Junction: 125°C (Max)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Supplier Device Package: TESQ

Paket: 4-SMD, Flat Leads

Lager1.824.000

TRS24N65D,S1F

Toshiba Semiconductor and Storage

DIODE ARRAY SCHOTTKY 650V TO247

Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io) (per Diode): 12A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 12A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 90µA @ 650V
Operating Temperature - Junction: 175°C (Max)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

Paket: TO-247-3

Lager3.600

TA58L05S,ALPSAQ(J

Toshiba Semiconductor and Storage

IC REG LINEAR 250MA 3HSIP

Output Configuration: -
Output Type: -
Number of Regulators: 1
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 250mA
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -40°C ~ 105°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: 3-HSIP

Paket: TO-220-3 Full Pack

Lager6.416

TCR2EF12,LM(CT

Toshiba Semiconductor and Storage

IC REG LINEAR 1.2V 200MA SMV

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 1.2V
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 200mA
Current - Quiescent (Iq): -
Current - Supply (Max): 60µA
PSRR: 73dB (1kHz)
Control Features: Enable
Protection Features: Over Current
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: SMV

Paket: SC-74A, SOT-753

Lager153.318

TB7102AF(TE85L,F)

Toshiba Semiconductor and Storage

IC REG BUCK ADJ 1A SYNC 8SON

Function: Step-Down
Output Configuration: Positive
Topology: Buck
Output Type: Adjustable
Number of Outputs: 1
Voltage - Input (Min): 2.7V
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 0.8V
Voltage - Output (Max): 4.5V
Current - Output: 1A
Frequency - Switching: 1MHz
Synchronous Rectifier: Yes
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: PS-8 (2.9x2.4)

Paket: 8-SMD, Flat Lead

Lager7.712

TC62D722CFG,EL

Toshiba Semiconductor and Storage

IC LED DRVR CONST CURR 24SSOP

Type: Linear
Topology: Shift Register
Internal Switch(s): Yes
Number of Outputs: 16
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Voltage - Output: 17V
Current - Output / Channel: 90mA
Frequency: -
Dimming: -
Applications: -
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-SOP (0.236", 6.00mm Width)
Supplier Device Package: 24-SSOP

Paket: 24-SOP (0.236", 6.00mm Width)

Lager4.176

TC74AC04FTEL

Toshiba Semiconductor and Storage

IC INVERTER HEX 14TSSOP

Logic Type: Inverter
Number of Circuits: 6
Number of Inputs: 6
Features: -
Voltage - Supply: 2 V ~ 5.5 V
Current - Quiescent (Max): 4µA
Current - Output High, Low: 24mA, 24mA
Logic Level - Low: 0.5 V ~ 1.65 V
Logic Level - High: 1.5 V ~ 3.85 V
Max Propagation Delay @ V, Max CL: 6.6ns @ 5V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: 14-TSSOP
Package / Case: 14-TSSOP (0.173", 4.40mm Width)

Paket: 14-TSSOP (0.173", 4.40mm Width)

Lager6.976

74HC132D(BJ)

Toshiba Semiconductor and Storage

IC GATE NAND 4CH 2-INP 14SOIC

Logic Type: NAND Gate
Number of Circuits: 4
Number of Inputs: 2
Features: Schmitt Trigger
Voltage - Supply: 2 V ~ 6 V
Current - Quiescent (Max): 1µA
Current - Output High, Low: 5.2mA, 5.2mA
Logic Level - Low: -
Logic Level - High: -
Max Propagation Delay @ V, Max CL: 19ns @ 5V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: 14-SOIC
Package / Case: 14-SOIC (0.154", 3.90mm Width)

Paket: 14-SOIC (0.154", 3.90mm Width)

Lager26.298

TC74VHC540FTELM

Toshiba Semiconductor and Storage

IC INVERTER 8-INPUT 20TSSOP

Logic Type: Buffer, Inverting
Number of Elements: 1
Number of Bits per Element: 8
Input Type: -
Output Type: Push-Pull
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 20-TSSOP

Paket: 20-TSSOP (0.173", 4.40mm Width)

Lager6.592

TL1F2-DW0,L

Toshiba Semiconductor and Storage

LED LETERAS COOL WHT 6500K 2SMD

Color: White, Cool
CCT (K): 6500K
Flux @ 85°C, Current - Test: -
Flux @ 25°C, Current - Test: 133 lm (120 lm ~ 145 lm)
Current - Test: 350mA
Voltage - Forward (Vf) (Typ): 2.85V
Lumens/Watt @ Current - Test: 133 lm/W
CRI (Color Rendering Index): 70
Current - Max: 550mA
Viewing Angle: 120°
Mounting Type: Surface Mount
Package / Case: 2020 (5050 Metric)
Supplier Device Package: 6450
Size / Dimension: 0.197" L x 0.197" W (5.00mm x 5.00mm)
Height - Seated (Max): 0.057" (1.45mm)

Paket: 2020 (5050 Metric)

Lager3.726

DF3D36FU,LF

Toshiba Semiconductor and Storage

ESD PROTECTION DIODE (BI-DIRECTI

Type: -
Unidirectional Channels: -
Bidirectional Channels: 2
Voltage - Reverse Standoff (Typ): 28V
Voltage - Breakdown (Min): 32V
Voltage - Clamping (Max) @ Ipp: -
Current - Peak Pulse (10/1000µs): -
Power - Peak Pulse: -
Power Line Protection: No
Applications: Automotive
Capacitance @ Frequency: 7pF @ 1MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: USM

Paket: SC-70, SOT-323

Lager47.022

TCS40DLR,LF

Toshiba Semiconductor and Storage

MAGNETIC SWITCH OMNIPOLAR SOT23F

Function: Omnipolar Switch
Technology: Hall Effect
Polarization: Either
Sensing Range: ±4.4mT Trip, ±0.9mT Release
Test Condition: 25°C
Voltage - Supply: 2.3 V ~ 5.5 V
Current - Supply (Max): 1.6mA (Typ)
Current - Output (Max): 5mA
Output Type: Open Drain
Features: -
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: SOT-23-3 Flat Leads
Supplier Device Package: SOT-23F

Paket: SOT-23-3 Flat Leads

Lager589.350

TLP161J(TPR,U,C,F)

Toshiba Semiconductor and Storage

OPTOISOLATOR 2.5KV TRIAC 6MFSOP

Output Type: Triac
Zero Crossing Circuit: Yes
Number of Channels: 1
Voltage - Isolation: 2500Vrms
Voltage - Off State: 600V
Static dV/dt (Min): 200V/µs
Current - LED Trigger (Ift) (Max): 10mA
Current - On State (It (RMS)) (Max): 70mA
Current - Hold (Ih): 600µA (Typ)
Turn On Time: -
Voltage - Forward (Vf) (Typ): 1.15V
Current - DC Forward (If) (Max): 50mA
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.173", 4.40mm Width) 4 Leads
Supplier Device Package: 6-MFSOP, 4 Lead
Approvals: UR

Paket: 6-SOIC (0.173", 4.40mm Width) 4 Leads

Lager2.700

TC7SET126F,LJ(CT

Toshiba Semiconductor and Storage

IC BUFFER NON-INVERT 5.5V SMV

Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Number of Bits per Element: 1
Input Type: -
Output Type: 3-State
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: SMV

Paket: SC-74A, SOT-753

Lager4.128

TCR2LE15,LM(CT

Toshiba Semiconductor and Storage

200MA LDO VOUT1.5V DROPOUT220MV

Output Configuration: -
Output Type: -
Number of Regulators: -
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: -
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

Paket: -

Lager6.816

RN1907FE-LF-CT

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.1W ES6

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

Paket: -

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2SA1832-Y-LXHF

Toshiba Semiconductor and Storage

TRANS PNP 50V 0.15A SSM

Transistor Type: PNP
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Power - Max: 120 mW
Frequency - Transition: 80MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM

Paket: -

Lager2.070

TPH4R803PL-LQ

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 48A 8SOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.1V @ 200µA
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 15 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 830mW (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 24A, 10V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP Advance (5x5)
Package / Case: 8-PowerVDFN

Paket: -

Lager14.982

CMZ36-TE12L-Q-M

Toshiba Semiconductor and Storage

PB-F ZENER DIODE M-FLAT MOQ=3000

Voltage - Zener (Nom) (Vz): 36 V
Tolerance: ±10%
Power - Max: 2 W
Impedance (Max) (Zzt): 30 Ohms
Current - Reverse Leakage @ Vr: 10 µA @ 28.8 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: M-FLAT (2.4x3.8)

Paket: -

Lager14.358

TC74LCX74FT-EL

Toshiba Semiconductor and Storage

IC D-TYPE POS TRG DUAL 14TSSOP

Function: Set(Preset) and Reset
Type: D-Type
Output Type: Complementary
Number of Elements: 2
Number of Bits per Element: 1
Clock Frequency: 150 MHz
Max Propagation Delay @ V, Max CL: 7ns @ 3.3V, 50pF
Trigger Type: Positive Edge
Current - Output High, Low: 24mA, 24mA
Voltage - Supply: 1.65V ~ 3.6V
Current - Quiescent (Iq): 10 µA
Input Capacitance: 7 pF
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)

Paket: -

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TK110P10PL-RQ

Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 20A, 10V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

Paket: -

Lager4.038

RN4905-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYM) PN

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz, 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

Paket: -

Lager9.000

2SC2712-BL-LXHF

Toshiba Semiconductor and Storage

TRANS NPN 50V 0.15A SMINI

Transistor Type: NPN
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Power - Max: 200 mW
Frequency - Transition: 80MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini

Paket: -

Lager14.247