Vishay Semiconductor Diodes Division Produkte

VS-40TTS12-M3

Vishay Semiconductor Diodes Division

SCR 1200V 40A TO-220

• Voltage - Off State: 1200V
• Voltage - Gate Trigger (Vgt) (Max): 1.3V
• Current - Gate Trigger (Igt) (Max): 35mA
• Voltage - On State (Vtm) (Max): 1.6V
• Current - On State (It (AV)) (Max): 25A
• Current - On State (It (RMS)) (Max): 40A
• Current - Hold (Ih) (Max): 100mA
• Current - Off State (Max): 500µA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 300A @ 50Hz
• SCR Type: Standard Recovery
• Operating Temperature: -40°C ~ 140°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

Paket: TO-220-3

SMBZ5924B-E3/5B

Vishay Semiconductor Diodes Division

DIODE ZENER 9.1V 3W DO214AA

• Voltage - Zener (Nom) (Vz): 9.1V
• Tolerance: ±5%
• Power - Max: 3W
• Impedance (Max) (Zzt): 4 Ohms
• Current - Reverse Leakage @ Vr: 25µA @ 7V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMBJ)

Paket: DO-214AA, SMB

GDZ3V0B-E3-18

Vishay Semiconductor Diodes Division

DIODE ZENER 3V 200MW SOD323

• Voltage - Zener (Nom) (Vz): 3V
• Tolerance: ±4%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 120 Ohms
• Current - Reverse Leakage @ Vr: 50µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323

Paket: SC-76, SOD-323

BZX384C18-E3-08

Vishay Semiconductor Diodes Division

DIODE ZENER 18V 200MW SOD323

• Voltage - Zener (Nom) (Vz): 18V
• Tolerance: ±5%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 45 Ohms
• Current - Reverse Leakage @ Vr: 50nA @ 12.6V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323

Paket: SC-76, SOD-323

DZ23C6V8-G3-18

Vishay Semiconductor Diodes Division

DIODE ZENER 6.8V 300MW SOT23

• Configuration: 1 Pair Common Cathode
• Voltage - Zener (Nom) (Vz): 6.8V
• Tolerance: ±5%
• Power - Max: 300mW
• Impedance (Max) (Zzt): 8 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 3V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

Paket: TO-236-3, SC-59, SOT-23-3

AU3PGHM3/87A

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 400V 1.7A TO277A

• Diode Type: Avalanche
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 1.7A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.9V @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75ns
• Current - Reverse Leakage @ Vr: 10µA @ 400V
• Capacitance @ Vr, F: 72pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A (SMPC)
• Operating Temperature - Junction: -55°C ~ 175°C

Paket: TO-277, 3-PowerDFN

VS-85HFR100

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 85A DO203AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io): 85A
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 267A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 9mA @ 1000V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-203AB
• Operating Temperature - Junction: -65°C ~ 180°C

Paket: DO-203AB, DO-5, Stud

SL04-M3-18

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V DO219-M

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 1.1A
• Voltage - Forward (Vf) (Max) @ If: 530mV @ 1.1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 20µA @ 40V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: DO-219AB (SMF)
• Operating Temperature - Junction: -55°C ~ 150°C

Paket: DO-219AB

ES2B/1

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 2A DO214AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30ns
• Current - Reverse Leakage @ Vr: 10µA @ 100V
• Capacitance @ Vr, F: 18pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)
• Operating Temperature - Junction: -55°C ~ 150°C

Paket: DO-214AA, SMB

SF4005-TR

Vishay Semiconductor Diodes Division

DIODE AVAL 1A 600V SOD-57

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75ns
• Current - Reverse Leakage @ Vr: 5µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: SOD-57, Axial
• Supplier Device Package: SOD-57
• Operating Temperature - Junction: -55°C ~ 175°C

Paket: SOD-57, Axial

MURS120HE3_A/H

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 2A DO214AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: 2µA @ 200V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)
• Operating Temperature - Junction: -65°C ~ 175°C

Paket: DO-214AA, SMB

BYG21M-E3/TR3

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 1KV 1.5A

• Diode Type: Avalanche
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1.5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 120ns
• Current - Reverse Leakage @ Vr: 1µA @ 1000V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -55°C ~ 150°C

Paket: DO-214AC, SMA

MPG06GHE3_A/100

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A MPG06

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 600ns
• Current - Reverse Leakage @ Vr: 5µA @ 400V
• Capacitance @ Vr, F: 10pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: MPG06, Axial
• Supplier Device Package: MPG06
• Operating Temperature - Junction: -55°C ~ 150°C

Paket: MPG06, Axial

SS3P5HM3/84A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 50V 3A DO220AA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 780mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 50V
• Capacitance @ Vr, F: 80pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-220AA
• Supplier Device Package: DO-220AA (SMP)
• Operating Temperature - Junction: -55°C ~ 150°C

Paket: DO-220AA

VS-60EPS08PBF

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 60A TO247AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 60A
• Voltage - Forward (Vf) (Max) @ If: 1.09V @ 60A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 800V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-247-2
• Supplier Device Package: TO-247AC Modified
• Operating Temperature - Junction: -40°C ~ 150°C

Paket: TO-247-2

1N4148W-E3-18

Vishay Semiconductor Diodes Division

DIODE GEN PURP 75V 150MA SOD123

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 75V
• Current - Average Rectified (Io): 150mA
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4ns
• Current - Reverse Leakage @ Vr: 100µA @ 100V
• Capacitance @ Vr, F: 4pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123
• Operating Temperature - Junction: 150°C (Max)

Paket: SOD-123

VB60100C-E3/8W

Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 100V TO263

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io) (per Diode): 30A
• Voltage - Forward (Vf) (Max) @ If: 790mV @ 30A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 100V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB

Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

VF20120C-E3/4W

Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 120V ITO220

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 120V
• Current - Average Rectified (Io) (per Diode): 10A
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 700µA @ 120V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack, Isolated Tab
• Supplier Device Package: ITO-220AB

Paket: TO-220-3 Full Pack, Isolated Tab

VS-4CSH02-M3/86A

Vishay Semiconductor Diodes Division

DIODE HFAST REC 200V 2A TO277A

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io) (per Diode): 2A
• Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 16ns
• Current - Reverse Leakage @ Vr: 2µA @ 200V
• Operating Temperature - Junction: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A (SMPC)

Paket: TO-277, 3-PowerDFN

GBU6D-E3/51

Vishay Semiconductor Diodes Division

DIODE GPP 6A 200V GPP INLINE GBU

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 200V
• Current - Average Rectified (Io): 3.8A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
• Current - Reverse Leakage @ Vr: 5µA @ 200V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, GBU
• Supplier Device Package: GBU

Paket: 4-SIP, GBU

SA7.0CHE3/54

Vishay Semiconductor Diodes Division

TVS DIODE 7VWM 13.3VC DO204AC

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 7V
• Voltage - Breakdown (Min): 7.78V
• Voltage - Clamping (Max) @ Ipp: 13.3V
• Current - Peak Pulse (10/1000µs): 37.6A
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)

Paket: DO-204AC, DO-15, Axial

1.5KE8.2CA/54

Vishay Semiconductor Diodes Division

TVS DIODE 7.02VWM 12.1VC 1.5KE

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 7.02V
• Voltage - Breakdown (Min): 7.79V
• Voltage - Clamping (Max) @ Ipp: 12.1V
• Current - Peak Pulse (10/1000µs): 124A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: 1.5KE

Paket: DO-201AA, DO-27, Axial

TPSMC20AHE3_A/I

Vishay Semiconductor Diodes Division

TVS DIODE 17.1VWM 27.7VC SMC

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 17.1V
• Voltage - Breakdown (Min): 19V
• Voltage - Clamping (Max) @ Ipp: 27.7V
• Current - Peak Pulse (10/1000µs): 54.2A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 185°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

Paket: DO-214AB, SMC

SMBJ170CHE3/52

Vishay Semiconductor Diodes Division

TVS DIODE 170VWM 304VC SMB

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 170V
• Voltage - Breakdown (Min): 189V
• Voltage - Clamping (Max) @ Ipp: 304V
• Current - Peak Pulse (10/1000µs): 2A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMBJ)

Paket: DO-214AA, SMB

BZT03D20-TAP

Vishay Semiconductor Diodes Division

TVS DIODE 15.8VWM 29.2VC SOD57

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 15.8V
• Voltage - Breakdown (Min): 18V
• Voltage - Clamping (Max) @ Ipp: 29.2V
• Current - Peak Pulse (10/1000µs): 10.6A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: SOD-57, Axial
• Supplier Device Package: SOD-57

Paket: SOD-57, Axial

P4KE100AHE3/54

Vishay Semiconductor Diodes Division

TVS DIODE 85.5VWM 137VC AXIAL

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 85.5V
• Voltage - Breakdown (Min): 95V
• Voltage - Clamping (Max) @ Ipp: 137V
• Current - Peak Pulse (10/1000µs): 2.9A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

Paket: DO-204AL, DO-41, Axial

SMCG7.5CA-M3/57T

Vishay Semiconductor Diodes Division

TVS DIODE 7.5VWM 12.9VC DO-215AB

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 7.5V
• Voltage - Breakdown (Min): 8.33V
• Voltage - Clamping (Max) @ Ipp: 12.9V
• Current - Peak Pulse (10/1000µs): 116.3A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AB, SMC Gull Wing
• Supplier Device Package: DO-215AB (SMCG)

Paket: DO-215AB, SMC Gull Wing

1.5SMC75A-E3/9AT

Vishay Semiconductor Diodes Division

TVS DIODE 64.1VWM 104VC DO214AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 64.1V
• Voltage - Breakdown (Min): 71.3V
• Voltage - Clamping (Max) @ Ipp: 104V
• Current - Peak Pulse (10/1000µs): 14.6A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

Paket: DO-214AB, SMC