Vishay Semiconductor Diodes Division Produkte

FB180SA10

Vishay Semiconductor Diodes Division

MOSFET N-CH 100V 180A SOT-227

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 180A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 10700pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 480W (Tc)
• Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 108A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: SOT-227B
• Package / Case: SOT-227-4, miniBLOC

Paket: SOT-227-4, miniBLOC

VS-25RIA80

Vishay Semiconductor Diodes Division

SCR MED POWER 800V 25A TO-48

• Voltage - Off State: 800V
• Voltage - Gate Trigger (Vgt) (Max): 2V
• Current - Gate Trigger (Igt) (Max): 60mA
• Voltage - On State (Vtm) (Max): 1.7V
• Current - On State (It (AV)) (Max): 25A
• Current - On State (It (RMS)) (Max): 40A
• Current - Hold (Ih) (Max): 130mA
• Current - Off State (Max): 10mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 420A, 440A
• SCR Type: Standard Recovery
• Operating Temperature: -65°C ~ 125°C
• Mounting Type: Chassis, Stud Mount
• Package / Case: TO-208AA, TO-48-3, Stud
• Supplier Device Package: TO-208AA (TO-48)

Paket: TO-208AA, TO-48-3, Stud

VS-VSKV250-04PBF

Vishay Semiconductor Diodes Division

MODULE THYRISTOR 250A MAGN-A-PAK

• Structure: Common Anode - All SCRs
• Number of SCRs, Diodes: 2 SCRs
• Voltage - Off State: 400V
• Current - On State (It (AV)) (Max): 250A
• Current - On State (It (RMS)) (Max): 555A
• Voltage - Gate Trigger (Vgt) (Max): 3V
• Current - Gate Trigger (Igt) (Max): 200mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 8500A, 8900A
• Current - Hold (Ih) (Max): 500mA
• Operating Temperature: -40°C ~ 130°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: MAGN-A-PAK

Paket: MAGN-A-PAK

VS-VSKU56/12

Vishay Semiconductor Diodes Division

MODULE THYRISTOR 60A ADD-A-PAK

• Structure: Common Cathode - All SCRs
• Number of SCRs, Diodes: 2 SCRs
• Voltage - Off State: 1200V
• Current - On State (It (AV)) (Max): 60A
• Current - On State (It (RMS)) (Max): 95A
• Voltage - Gate Trigger (Vgt) (Max): 2.5V
• Current - Gate Trigger (Igt) (Max): 150mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 1200A, 1256A
• Current - Hold (Ih) (Max): 200mA
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: ADD-A-PAK (3 + 4)

Paket: ADD-A-PAK (3 + 4)

BZX55A24-TAP

Vishay Semiconductor Diodes Division

DIODE ZENER 24V 500MW DO35

• Voltage - Zener (Nom) (Vz): 24V
• Tolerance: ±1%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 80 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 18V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
• Operating Temperature: 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

Paket: DO-204AH, DO-35, Axial

SML4743-E3/5A

Vishay Semiconductor Diodes Division

DIODE ZENER 13V 1W DO214AC

• Voltage - Zener (Nom) (Vz): 13V
• Tolerance: ±10%
• Power - Max: 1W
• Impedance (Max) (Zzt): 10 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 9.9V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

Paket: DO-214AC, SMA

BZG05C6V2-HE3-TR3

Vishay Semiconductor Diodes Division

DIODE ZENER 6.2V 1.25W DO214AC

• Voltage - Zener (Nom) (Vz): 6.2V
• Tolerance: ±5%
• Power - Max: 1.25W
• Impedance (Max) (Zzt): 4 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 3V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC

Paket: DO-214AC, SMA

SMAZ5941B-E3/61

Vishay Semiconductor Diodes Division

DIODE ZENER 47V 500MW DO214AC

• Voltage - Zener (Nom) (Vz): 47V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 67 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 35.8V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC

Paket: DO-214AC, SMA

BZG05C12-E3-TR3

Vishay Semiconductor Diodes Division

DIODE ZENER 12V 1.25W DO214AC

• Voltage - Zener (Nom) (Vz): 12V
• Tolerance: ±5%
• Power - Max: 1.25W
• Impedance (Max) (Zzt): 9 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 9.1V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC

Paket: DO-214AC, SMA

BZX584C4V7-V-G-08

Vishay Semiconductor Diodes Division

DIODE ZENER 4.7V 200MW SOD523

• Voltage - Zener (Nom) (Vz): 4.7V
• Tolerance: ±5%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 80 Ohms
• Current - Reverse Leakage @ Vr: 3µA @ 2V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: SOD-523

Paket: SC-79, SOD-523

BZT52C20-G3-18

Vishay Semiconductor Diodes Division

DIODE ZENER 20V 410MW SOD123

• Voltage - Zener (Nom) (Vz): 20V
• Tolerance: ±5%
• Power - Max: 410mW
• Impedance (Max) (Zzt): 20 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 15V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

Paket: SOD-123

TZS4704-GS08

Vishay Semiconductor Diodes Division

DIODE ZENER 17V 500MW SOD80

• Voltage - Zener (Nom) (Vz): 17V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): -
• Current - Reverse Leakage @ Vr: 50nA @ 12.9V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 100mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: SOD-80 Variant
• Supplier Device Package: SOD-80 QuadroMELF

Paket: SOD-80 Variant

BZX55B3V6-TAP

Vishay Semiconductor Diodes Division

DIODE ZENER 3.6V 500MW DO35

• Voltage - Zener (Nom) (Vz): 3.6V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 90 Ohms
• Current - Reverse Leakage @ Vr: 2µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

Paket: DO-204AH, DO-35, Axial

1N5250B-TR

Vishay Semiconductor Diodes Division

DIODE ZENER 20V 500MW DO35

• Voltage - Zener (Nom) (Vz): 20V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 25 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 15V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

Paket: DO-204AH, DO-35, Axial

NSB8KTHE3/45

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 8A TO263AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 800V
• Capacitance @ Vr, F: 55pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB
• Operating Temperature - Junction: -55°C ~ 150°C

Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

ES3D/7T

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 3A DO214AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30ns
• Current - Reverse Leakage @ Vr: 10µA @ 200V
• Capacitance @ Vr, F: 45pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB, (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

Paket: DO-214AB, SMC

VS-70HFL40S05

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 70A DO203AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 70A
• Voltage - Forward (Vf) (Max) @ If: 1.85V @ 219.8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 500ns
• Current - Reverse Leakage @ Vr: 100µA @ 400V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-203AB
• Operating Temperature - Junction: -40°C ~ 125°C

Paket: DO-203AB, DO-5, Stud

VS-MBRB1635TRLPBF

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 16A 35V D2PAK

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 35V
• Current - Average Rectified (Io): 16A
• Voltage - Forward (Vf) (Max) @ If: 630mV @ 16A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200µA @ 35V
• Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB (D2PAK)
• Operating Temperature - Junction: -55°C ~ 150°C

Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FES8HT-E3/45

Vishay Semiconductor Diodes Division

DIODE GEN PURP 500V 8A TO220AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 500V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 10µA @ 500V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -55°C ~ 150°C

Paket: TO-220-2

SE30PAGHM3/I

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 3A DO-221BC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.16V @ 3A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.3µs
• Current - Reverse Leakage @ Vr: 5µA @ 400V
• Capacitance @ Vr, F: 13pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
• Supplier Device Package: DO-221BC (SMPA)
• Operating Temperature - Junction: -55°C ~ 175°C

Paket: DO-221BC, SMA Flat Leads Exposed Pad

GL41J-E3/96

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO213AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Capacitance @ Vr, F: 8pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF (Glass)
• Supplier Device Package: DO-213AB
• Operating Temperature - Junction: -65°C ~ 175°C

Paket: DO-213AB, MELF (Glass)

IRKD166/08

Vishay Semiconductor Diodes Division

DIODE MODULE 800V 165A INT-A-PAK

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io) (per Diode): 165A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 20mA @ 800V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3)
• Supplier Device Package: Module

Paket: INT-A-PAK (3)

MBRB30H50CTHE3_A/I

Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 50V TO263-3

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io) (per Diode): 15A
• Voltage - Forward (Vf) (Max) @ If: 680mV @ 15A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 60µA @ 50V
• Operating Temperature - Junction: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB

Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SMCG33-E3/57T

Vishay Semiconductor Diodes Division

TVS DIODE 33VWM 59VC SMC

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 33V
• Voltage - Breakdown (Min): 36.7V
• Voltage - Clamping (Max) @ Ipp: 59V
• Current - Peak Pulse (10/1000µs): 25.4A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AB, SMC Gull Wing
• Supplier Device Package: DO-215AB (SMCG)

Paket: DO-215AB, SMC Gull Wing

TGL41-62-E3/97

Vishay Semiconductor Diodes Division

TVS DIODE 50.2VWM 89VC MELF

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 50.2V
• Voltage - Breakdown (Min): 55.8V
• Voltage - Clamping (Max) @ Ipp: 89V
• Current - Peak Pulse (10/1000µs): 4.5A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: DO-213AB

Paket: DO-213AB, MELF

P4KE15A-E3/73

Vishay Semiconductor Diodes Division

TVS DIODE 12.8VWM 21.2VC AXIAL

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 12.8V
• Voltage - Breakdown (Min): 14.3V
• Voltage - Clamping (Max) @ Ipp: 21.2V
• Current - Peak Pulse (10/1000µs): 18.9A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

Paket: DO-204AL, DO-41, Axial

BZW04-17-E3/73

Vishay Semiconductor Diodes Division

TVS DIODE 17.1VWM 14.5VC DO204AL

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 17.1V
• Voltage - Breakdown (Min): 19V
• Voltage - Clamping (Max) @ Ipp: 27.7V
• Current - Peak Pulse (10/1000µs): 14.5A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

Paket: DO-204AL, DO-41, Axial

SMBG6.5A-M3/52

Vishay Semiconductor Diodes Division

TVS DIODE 6.5VWM 11.2VC DO-215AA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 6.5V
• Voltage - Breakdown (Min): 7.22V
• Voltage - Clamping (Max) @ Ipp: 11.2V
• Current - Peak Pulse (10/1000µs): 53.6A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AA, SMB Gull Wing
• Supplier Device Package: DO-215AA (SMBG)

Paket: DO-215AA, SMB Gull Wing