Vishay Semiconductor Diodes Division Produkte

VS-ST700C16L0L

Vishay Semiconductor Diodes Division

SCR 1600V 1857A B-PUK

• Voltage - Off State: 1600V
• Voltage - Gate Trigger (Vgt) (Max): 3V
• Current - Gate Trigger (Igt) (Max): 200mA
• Voltage - On State (Vtm) (Max): 1.8V
• Current - On State (It (AV)) (Max): 910A
• Current - On State (It (RMS)) (Max): 1857A
• Current - Hold (Ih) (Max): 600mA
• Current - Off State (Max): 80mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 13200A, 13800A
• SCR Type: Standard Recovery
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: TO-200AC, B-PUK
• Supplier Device Package: TO-200AC, B-PUK

Paket: TO-200AC, B-PUK

GLL4740A-E3/96

Vishay Semiconductor Diodes Division

DIODE ZENER 10V 1W MELF DO213AB

• Voltage - Zener (Nom) (Vz): 10V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 7 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 7.6V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: MELF DO-213AB

Paket: DO-213AB, MELF

PLZ30D-HG3/H

Vishay Semiconductor Diodes Division

DIODE ZENER 30V 500MW DO219AC

• Voltage - Zener (Nom) (Vz): 30V
• Tolerance: ±3%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 55 Ohms
• Current - Reverse Leakage @ Vr: 200nA @ 23V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-219AC
• Supplier Device Package: DO-219AC (microSMF)

Paket: DO-219AC

BZX384C2V4-G3-08

Vishay Semiconductor Diodes Division

DIODE ZENER 2.4V 200MW SOD323

• Voltage - Zener (Nom) (Vz): 2.4V
• Tolerance: ±5%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 100 Ohms
• Current - Reverse Leakage @ Vr: 50µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323

Paket: SC-76, SOD-323

BZT52C36-E3-08

Vishay Semiconductor Diodes Division

DIODE ZENER 36V 410MW SOD123

• Voltage - Zener (Nom) (Vz): 36V
• Tolerance: ±5%
• Power - Max: 410mW
• Impedance (Max) (Zzt): 40 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 27V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

Paket: SOD-123

TZMB11-GS18

Vishay Semiconductor Diodes Division

DIODE ZENER 11V 500MW SOD80

• Voltage - Zener (Nom) (Vz): 11V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 20 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 8.2V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: SOD-80 MiniMELF

Paket: DO-213AC, MINI-MELF, SOD-80

TLZ3V6B-GS18

Vishay Semiconductor Diodes Division

DIODE ZENER 3.6V 500MW SOD80

• Voltage - Zener (Nom) (Vz): 3.6V
• Tolerance: -
• Power - Max: 500mW
• Impedance (Max) (Zzt): 60 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: SOD-80 MiniMELF

Paket: DO-213AC, MINI-MELF, SOD-80

AU2PDHM3/86A

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 1.6A TO277A

• Diode Type: Avalanche
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 1.6A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.9V @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75ns
• Current - Reverse Leakage @ Vr: 10µA @ 200V
• Capacitance @ Vr, F: 42pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A (SMPC)
• Operating Temperature - Junction: -55°C ~ 175°C

Paket: TO-277, 3-PowerDFN

RGP10BEHE3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO204AL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150ns
• Current - Reverse Leakage @ Vr: 5µA @ 100V
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -65°C ~ 175°C

Paket: DO-204AL, DO-41, Axial

FGP20CHE3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 2A DO204AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 150V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: 2µA @ 150V
• Capacitance @ Vr, F: 45pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)
• Operating Temperature - Junction: -65°C ~ 175°C

Paket: DO-204AC, DO-15, Axial

VS-25ETS10STRRPBF

Vishay Semiconductor Diodes Division

DIODE RECT 25A 1000V D2PAK

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io): 25A
• Voltage - Forward (Vf) (Max) @ If: 1.14V @ 25A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 1000V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB (D2PAK)
• Operating Temperature - Junction: -40°C ~ 150°C

Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FESB8BTHE3/81

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 8A TO263AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 950mV @ 8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: 10µA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB
• Operating Temperature - Junction: -55°C ~ 150°C

Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

BYM36B-TAP

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 400V 3A SOD64

• Diode Type: Avalanche
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 100ns
• Current - Reverse Leakage @ Vr: 5µA @ 400V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: SOD-64, Axial
• Supplier Device Package: SOD-64
• Operating Temperature - Junction: -55°C ~ 175°C

Paket: SOD-64, Axial

UH2BHE3_A/I

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 2A DO214AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.05V @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25ns
• Current - Reverse Leakage @ Vr: 2µA @ 100V
• Capacitance @ Vr, F: 42pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)
• Operating Temperature - Junction: -55°C ~ 175°C

Paket: DO-214AA, SMB

RS2KHE3_A/I

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 1.5A DO214AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 500ns
• Current - Reverse Leakage @ Vr: 5µA @ 800V
• Capacitance @ Vr, F: 17pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)
• Operating Temperature - Junction: -55°C ~ 150°C

Paket: DO-214AA, SMB

EGL34C-E3/83

Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 500MA DO213

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 150V
• Current - Average Rectified (Io): 500mA
• Voltage - Forward (Vf) (Max) @ If: 1.25V @ 500mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 5µA @ 150V
• Capacitance @ Vr, F: 7pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-213AA (Glass)
• Supplier Device Package: DO-213AA (GL34)
• Operating Temperature - Junction: -65°C ~ 175°C

Paket: DO-213AA (Glass)

VS-2EFH01HM3/I

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 2A DO-219AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 16ns
• Current - Reverse Leakage @ Vr: 2µA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: DO-219AB (SMF)
• Operating Temperature - Junction: -65°C ~ 175°C

Paket: DO-219AB

IRKD91/06A

Vishay Semiconductor Diodes Division

DIODE MODULE 600V 100A ADD-A-PAK

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io) (per Diode): 100A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10mA @ 600V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: ADD-A-PAK (3)
• Supplier Device Package: ADD-A-PAK?

Paket: ADD-A-PAK (3)

FEPE16HT-E3/45

Vishay Semiconductor Diodes Division

DIODE ARRAY GP 500V 16A TO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 500V
• Current - Average Rectified (Io) (per Diode): 8A
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 10µA @ 500V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

Paket: TO-220-3

SS10P3CLHM3_A/I

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 10A 30V TO277A

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io) (per Diode): 5A
• Voltage - Forward (Vf) (Max) @ If: 530mV @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 550µA @ 30V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A (SMPC)

Paket: TO-277, 3-PowerDFN

VS-40L40CW-N3

Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 40V TO247AC

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io) (per Diode): 20A
• Voltage - Forward (Vf) (Max) @ If: 530mV @ 20A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1.5mA @ 40V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

Paket: TO-247-3

VS-GBPC2512A

Vishay Semiconductor Diodes Division

RECT BRIDGE 1-PH 1200V 25A GBPCA

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1200V
• Current - Average Rectified (Io): 25A
• Voltage - Forward (Vf) (Max) @ If: -
• Current - Reverse Leakage @ Vr: 2mA @ 1200V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: QC Terminal
• Package / Case: 4-Square, GBPC-A
• Supplier Device Package: GBPC-A

Paket: 4-Square, GBPC-A

1.5KA27AHE3/51

Vishay Semiconductor Diodes Division

TVS DIODE 23.1VWM 37.5VC 1.5KA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 23.1V
• Voltage - Breakdown (Min): 25.7V
• Voltage - Clamping (Max) @ Ipp: 37.5V
• Current - Peak Pulse (10/1000µs): 40A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 185°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: 1.5KA

Paket: DO-201AA, DO-27, Axial

SMCJ51C-E3/9AT

Vishay Semiconductor Diodes Division

TVS DIODE 51VWM 91.1VC SMC

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 51V
• Voltage - Breakdown (Min): 56.7V
• Voltage - Clamping (Max) @ Ipp: 91.1V
• Current - Peak Pulse (10/1000µs): 16.5A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

Paket: DO-214AB, SMC

SMAJ5.0C-E3/5A

Vishay Semiconductor Diodes Division

TVS DIODE 5VWM 9.6VC SMA

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 5V
• Voltage - Breakdown (Min): 6.4V
• Voltage - Clamping (Max) @ Ipp: 9.6V
• Current - Peak Pulse (10/1000µs): 41.7A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

Paket: DO-214AC, SMA

SMCJ45CAHE3/9AT

Vishay Semiconductor Diodes Division

TVS DIODE 45VWM 72.7VC SMC

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 45V
• Voltage - Breakdown (Min): 50V
• Voltage - Clamping (Max) @ Ipp: 72.7V
• Current - Peak Pulse (10/1000µs): 20.6A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

Paket: DO-214AB, SMC

SM6T30AHE3/5B

Vishay Semiconductor Diodes Division

TVS DIODE 25.6VWM 41.5VC SMB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 25.6V
• Voltage - Breakdown (Min): 28.5V
• Voltage - Clamping (Max) @ Ipp: 41.5V
• Current - Peak Pulse (10/1000µs): 14.5A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMBJ)

Paket: DO-214AA, SMB

P4SMA150A-E3/5A

Vishay Semiconductor Diodes Division

TVS DIODE 128VWM 207VC SMA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 128V
• Voltage - Breakdown (Min): 143V
• Voltage - Clamping (Max) @ Ipp: 207V
• Current - Peak Pulse (10/1000µs): 1.4A
• Power - Peak Pulse: 300W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

Paket: DO-214AC, SMA