Cree/Wolfspeed Produkte

C3M0065090J-TR

Cree/Wolfspeed

MOSFET N-CH 900V 35A D2PAK-7

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 900V
• Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 15V
• Vgs(th) (Max) @ Id: 2.1V @ 5mA
• Gate Charge (Qg) (Max) @ Vgs: 30nC @ 15V
• Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 600V
• Vgs (Max): +19V, -8V
• FET Feature: -
• Power Dissipation (Max): 113W (Tc)
• Rds On (Max) @ Id, Vgs: 78 mOhm @ 20A, 15V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK-7
• Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

Paket: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

C3M0280090J-TR

Cree/Wolfspeed

MOSFET N-CH 900V 11A

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 900V
• Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 15V
• Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
• Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 15V
• Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 600V
• Vgs (Max): +18V, -8V
• FET Feature: -
• Power Dissipation (Max): 50W (Tc)
• Rds On (Max) @ Id, Vgs: 360 mOhm @ 7.5A, 15V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK-7
• Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

Paket: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

CGHV27100F

Cree/Wolfspeed

FET RF 50V 2.7GHZ 440162

• Transistor Type: HEMT
• Frequency: 2.5GHz ~ 2.7GHz
• Gain: 18dB
• Voltage - Test: 50V
• Current Rating: 6A
• Noise Figure: -
• Current - Test: 500mA
• Power - Output: 100W
• Voltage - Rated: 50V
• Package / Case: 440162
• Supplier Device Package: 440162

Paket: 440162

CGH60015D

Cree/Wolfspeed

RF MOSFET HEMT 28V DIE

• Transistor Type: HEMT
• Frequency: 6GHz
• Gain: 15dB
• Voltage - Test: 28V
• Current Rating: -
• Noise Figure: -
• Current - Test: 200mA
• Power - Output: 15W
• Voltage - Rated: 84V
• Package / Case: Die
• Supplier Device Package: Die

Paket: Die

CGHV40320D

Cree/Wolfspeed

RF MOSFET HEMT 50V DIE

• Transistor Type: HEMT
• Frequency: 4GHz
• Gain: 19dB
• Voltage - Test: 50V
• Current Rating: -
• Noise Figure: -
• Current - Test: 500mA
• Power - Output: 320W
• Voltage - Rated: 150V
• Package / Case: Die
• Supplier Device Package: Die

Paket: Die

CGH27030F

Cree/Wolfspeed

RF MOSFET HEMT 28V 440166

• Transistor Type: HEMT
• Frequency: 3GHz
• Gain: 14.5dB
• Voltage - Test: 28V
• Current Rating: -
• Noise Figure: -
• Current - Test: 150mA
• Power - Output: 30W
• Voltage - Rated: 84V
• Package / Case: 440166
• Supplier Device Package: 440166

Paket: 440166

CGHV40100F

Cree/Wolfspeed

FET RF 125V 3GHZ 440193

• Transistor Type: HEMT
• Frequency: 0Hz ~ 3GHz
• Gain: 11dB
• Voltage - Test: 50V
• Current Rating: 8.7A
• Noise Figure: -
• Current - Test: 600mA
• Power - Output: 116W
• Voltage - Rated: 125V
• Package / Case: 440193
• Supplier Device Package: 440193

Paket: 440193

CAS100H12AM1

Cree/Wolfspeed

MOSFET 2N-CH 1200V 168A MODULE

• FET Type: 2 N-Channel (Half Bridge)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 168A
• Rds On (Max) @ Id, Vgs: 20 mOhm @ 20A, 20V
• Vgs(th) (Max) @ Id: 3.1V @ 50mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 9500pF @ 800V
• Power - Max: 568W
• Operating Temperature: -
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

Paket: Module

CCS050M12CM2

Cree/Wolfspeed

MOSFET 6N-CH 1200V 87A MODULE

• FET Type: 6 N-Channel (3-Phase Bridge)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 87A
• Rds On (Max) @ Id, Vgs: 34 mOhm @ 50A, 20V
• Vgs(th) (Max) @ Id: 2.3V @ 2.5mA
• Gate Charge (Qg) (Max) @ Vgs: 180nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 2.810nF @ 800V
• Power - Max: 337W
• Operating Temperature: 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

Paket: Module

CSD04060A

Cree/Wolfspeed

DIODE SCHOTTKY 600V 7A TO220-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 7A
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 4A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 200µA @ 600V
• Capacitance @ Vr, F: 220pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220-2
• Operating Temperature - Junction: -55°C ~ 175°C

Paket: TO-220-2

C3D10060G-TR

Cree/Wolfspeed

DIODE SCHOTTKY 600V 29.5A TO263

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 29.5A
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50µA @ 600V
• Capacitance @ Vr, F: 480pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263-2
• Operating Temperature - Junction: -55°C ~ 175°C

Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

C4D02120E

Cree/Wolfspeed

DIODE SCHOTTKY 1.2KV 2A TO252-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 2A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 50µA @ 1200V
• Capacitance @ Vr, F: 167pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252-2
• Operating Temperature - Junction: -55°C ~ 175°C

Paket: TO-252-3, DPak (2 Leads + Tab), SC-63

C3D04060E-TR

Cree/Wolfspeed

DIODE SCHOTTKY 600V 15.5A TO252

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 15.5A
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 4A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50µA @ 600V
• Capacitance @ Vr, F: 251pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252-2
• Operating Temperature - Junction: -55°C ~ 175°C

Paket: TO-252-3, DPak (2 Leads + Tab), SC-63

C3D04065A

Cree/Wolfspeed

DIODE SCHOTTKY 650V 4A TO220-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 650V
• Current - Average Rectified (Io): 4A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 4A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 60µA @ 650V
• Capacitance @ Vr, F: 251pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220-2
• Operating Temperature - Junction: -55°C ~ 175°C

Paket: TO-220-2

C3D08065E

Cree/Wolfspeed

DIODE SCHOTTKY 650V 25.5A TO252

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 650V
• Current - Average Rectified (Io): 25.5A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 50µA @ 650V
• Capacitance @ Vr, F: 395pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252-2
• Operating Temperature - Junction: -55°C ~ 175°C

Paket: TO-252-3, DPak (2 Leads + Tab), SC-63

C3D1P7060Q

Cree/Wolfspeed

DIODE SCHOTTKY 600V 1.7A 10PQFN

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 1.7A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1.7A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 50µA @ 600V
• Capacitance @ Vr, F: 100pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 10-PowerTQFN
• Supplier Device Package: 10-Power QFN (3.3x3.3)
• Operating Temperature - Junction: -55°C ~ 160°C

Paket: 10-PowerTQFN

C3D12065A

Cree/Wolfspeed

DIODE SCHOTTKY 650V 35A TO220-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 650V
• Current - Average Rectified (Io): 35A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 12A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 74µA @ 650V
• Capacitance @ Vr, F: 641.5pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220-2
• Operating Temperature - Junction: -55°C ~ 175°C

Paket: TO-220-2

C3D04065E

Cree/Wolfspeed

DIODE SCHOTTKY 650V 4A TO252-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 650V
• Current - Average Rectified (Io): 4A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 4A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 60µA @ 650V
• Capacitance @ Vr, F: 251pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252-2
• Operating Temperature - Junction: -55°C ~ 175°C

Paket: TO-252-3, DPak (2 Leads + Tab), SC-63

C3D25170H

Cree/Wolfspeed

DIODE SCHOTTKY 1.7KV 26.3A TO247

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 1700V
• Current - Average Rectified (Io): 26.3A (DC)
• Voltage - Forward (Vf) (Max) @ If: 2.5V @ 25A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 100µA @ 1700V
• Capacitance @ Vr, F: 2079pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-247-2
• Supplier Device Package: TO-247-2
• Operating Temperature - Junction: -55°C ~ 175°C

Paket: TO-247-2

C4D05120E

Cree/Wolfspeed

DIODE SCHOTTKY 1.2KV 5A TO252-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 5A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 150µA @ 1200V
• Capacitance @ Vr, F: 390pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252-2
• Operating Temperature - Junction: -55°C ~ 175°C

Paket: TO-252-3, DPak (2 Leads + Tab), SC-63

C3D10060G

Cree/Wolfspeed

DIODE SCHOTTKY 600V 10A TO263-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 10A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 50µA @ 600V
• Capacitance @ Vr, F: 480pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263-2
• Operating Temperature - Junction: -55°C ~ 175°C

Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

C4D02120A

Cree/Wolfspeed

DIODE SCHOTTKY 1.2KV 2A TO220-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 2A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 50µA @ 1200V
• Capacitance @ Vr, F: 167pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220-2
• Operating Temperature - Junction: -55°C ~ 175°C

Paket: TO-220-2

C2D20120D

Cree/Wolfspeed

DIODE ARRAY SCHOTTKY 1200V TO247

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io) (per Diode): 22A
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 200µA @ 1200V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

Paket: TO-247-3

C4D40120D

Cree/Wolfspeed

DIODE ARRAY SCHOTTKY 1200V TO247

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io) (per Diode): 27A
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 200µA @ 1200V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

Paket: TO-247-3

CGHV27060MP-AMP1

Cree/Wolfspeed

EVAL BOARD FOR CGHV27060

• Type: HEMT
• Frequency: 0Hz ~ 2.7GHz
• For Use With/Related Products: CGHV27060
• Supplied Contents: Board

Paket: -

CGHV40050F-TB

Cree/Wolfspeed

TEST BOARD FOR CGHV40050F

• Type: Transistor
• Frequency: 0Hz ~ 4GHz
• For Use With/Related Products: CGHV40050
• Supplied Contents: Partially Populated Board - Main IC Not Included

Paket: -

CMPA1D1E025F

Cree/Wolfspeed

IC AMP GAN HEMT MMIC 440208

• Frequency: 13.75GHz ~ 14.5GHz
• P1dB: -
• Gain: 24dB
• Noise Figure: -
• RF Type: -
• Voltage - Supply: 40V
• Current - Supply: -
• Test Frequency: -
• Package / Case: 440208
• Supplier Device Package: 440208

Paket: 440208

CMPA2560025F

Cree/Wolfspeed

IC AMP GAN HEMT MMIC 780019

• Frequency: 2.5GHz ~ 6GHz
• P1dB: -
• Gain: 24dB
• Noise Figure: -
• RF Type: -
• Voltage - Supply: 6 V ~ 28 V
• Current - Supply: 20mA ~ 10A
• Test Frequency: 2.5GHz ~ 6GHz
• Package / Case: 780019
• Supplier Device Package: 780019

Paket: 780019