Cree/Wolfspeed Produkte

C3M0075120J

Cree/Wolfspeed

1200V, 75 MOHM, G3 SIC MOSFET

• FET Type: N-Channel
• Technology: SiC (Silicon Carbide Junction Transistor)
• Drain to Source Voltage (Vdss): 1200V
• Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 15V
• Vgs(th) (Max) @ Id: 4V @ 5mA
• Gate Charge (Qg) (Max) @ Vgs: 51nC @ 15V
• Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 1000V
• Vgs (Max): +19V, -8V
• FET Feature: -
• Power Dissipation (Max): 113.6W (Tc)
• Rds On (Max) @ Id, Vgs: 90 mOhm @ 20A, 15V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK-7
• Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

Paket: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

C2M0040120D

Cree/Wolfspeed

MOSFET N-CH 1200V 60A TO-247

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 1200V
• Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 20V
• Vgs(th) (Max) @ Id: 2.8V @ 10mA
• Gate Charge (Qg) (Max) @ Vgs: 115nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 1893pF @ 1000V
• Vgs (Max): +25V, -10V
• FET Feature: -
• Power Dissipation (Max): 330W (Tc)
• Rds On (Max) @ Id, Vgs: 52 mOhm @ 40A, 20V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247-3
• Package / Case: TO-247-3

Paket: TO-247-3

C3M0280090D

Cree/Wolfspeed

MOSFET N-CH 900V 11.5A

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 900V
• Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 15V
• Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
• Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 15V
• Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 600V
• Vgs (Max): +18V, -8V
• FET Feature: -
• Power Dissipation (Max): 54W (Tc)
• Rds On (Max) @ Id, Vgs: 360 mOhm @ 7.5A, 15V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247-3
• Package / Case: TO-247-3

Paket: TO-247-3

CGHV27015S

Cree/Wolfspeed

RF MOSFET HEMT 50V 12VFDFN

• Transistor Type: HEMT
• Frequency: 6GHz
• Gain: 21dB
• Voltage - Test: 50V
• Current Rating: -
• Noise Figure: -
• Current - Test: 60mA
• Power - Output: 15W
• Voltage - Rated: 125V
• Package / Case: 12-VFDFN Exposed Pad
• Supplier Device Package: 12-DFN (4x3)

Paket: 12-VFDFN Exposed Pad

CGHV22100F

Cree/Wolfspeed

FET RF 125V 2.2GHZ 440162

• Transistor Type: HEMT
• Frequency: 1.8GHz ~ 2.2GHz
• Gain: 20dB
• Voltage - Test: 50V
• Current Rating: 6A
• Noise Figure: -
• Current - Test: 500mA
• Power - Output: 100W
• Voltage - Rated: 125V
• Package / Case: 440162
• Supplier Device Package: 440162

Paket: 440162

CGHV1F025S

Cree/Wolfspeed

FET RF 100V 6GHZ 12DFN

• Transistor Type: HEMT
• Frequency: 6GHz
• Gain: 16dB
• Voltage - Test: 40V
• Current Rating: 2A
• Noise Figure: -
• Current - Test: 150mA
• Power - Output: 29W
• Voltage - Rated: 100V
• Package / Case: 12-VFDFN Exposed Pad
• Supplier Device Package: 12-DFN (4x3)

Paket: 12-VFDFN Exposed Pad

CGH60030D-GP4

Cree/Wolfspeed

RF MOSFET HEMT 28V DIE

• Transistor Type: HEMT
• Frequency: 6GHz
• Gain: 15dB
• Voltage - Test: 28V
• Current Rating: -
• Noise Figure: -
• Current - Test: 250mA
• Power - Output: 30W
• Voltage - Rated: 84V
• Package / Case: Die
• Supplier Device Package: Die

Paket: Die

CGHV59350F

Cree/Wolfspeed

FET RF 125V 5.9GHZ 440217

• Transistor Type: HEMT
• Frequency: 5.2GHz ~ 5.9GHz
• Gain: 11.2dB
• Voltage - Test: 50V
• Current Rating: 24A
• Noise Figure: -
• Current - Test: 1A
• Power - Output: 450W
• Voltage - Rated: 125V
• Package / Case: 440217
• Supplier Device Package: 440217

Paket: 440217

CGHV31500F

Cree/Wolfspeed

FET RF 125V 24A 440217

• Transistor Type: HEMT
• Frequency: 2.7GHz ~ 3.1GHz
• Gain: 13.5dB
• Voltage - Test: 50V
• Current Rating: 24A
• Noise Figure: -
• Current - Test: 500mA
• Power - Output: 500W
• Voltage - Rated: 125V
• Package / Case: 440217
• Supplier Device Package: 440217

Paket: 440217

CGH40090PP

Cree/Wolfspeed

FET RF 84V 4GHZ 440199

• Transistor Type: HEMT
• Frequency: 0Hz ~ 4GHz
• Gain: 12.5dB
• Voltage - Test: 28V
• Current Rating: 28A
• Noise Figure: -
• Current - Test: 1A
• Power - Output: 100W
• Voltage - Rated: 84V
• Package / Case: 440199
• Supplier Device Package: 440199

Paket: 440199

CGHV40050F

Cree/Wolfspeed

FET RF 150V 4GHZ 440193

• Transistor Type: HEMT
• Frequency: 0Hz ~ 4GHz
• Gain: 12.5dB
• Voltage - Test: 50V
• Current Rating: 6.3A
• Noise Figure: -
• Current - Test: 300mA
• Power - Output: 50W
• Voltage - Rated: 150V
• Package / Case: 440193
• Supplier Device Package: 440193

Paket: 440193

CGH27060F

Cree/Wolfspeed

RF MOSFET HEMT 28V 440193

• Transistor Type: HEMT
• Frequency: 3GHz
• Gain: 13dB
• Voltage - Test: 28V
• Current Rating: -
• Noise Figure: -
• Current - Test: 300mA
• Power - Output: 60W
• Voltage - Rated: 84V
• Package / Case: 440193
• Supplier Device Package: 440193

Paket: 440193

CGH55030F1

Cree/Wolfspeed

FET RF 84V 5.8GHZ 440166

• Transistor Type: HEMT
• Frequency: 5.5GHz ~ 5.8GHz
• Gain: 10dB
• Voltage - Test: 28V
• Current Rating: 3A
• Noise Figure: -
• Current - Test: 250mA
• Power - Output: 30W
• Voltage - Rated: 84V
• Package / Case: 440166
• Supplier Device Package: 440166

Paket: 440166

C4D05120E-TR

Cree/Wolfspeed

DIODE SCHOTTKY 1.2KV 19A TO252-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 19A
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 150µA @ 1200V
• Capacitance @ Vr, F: 390pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252-2
• Operating Temperature - Junction: -55°C ~ 175°C

Paket: TO-252-3, DPak (2 Leads + Tab), SC-63

C4D02120E-TR

Cree/Wolfspeed

DIODE SCHOTTKY 1.2KV 9A TO252-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 9A
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 50µA @ 1200V
• Capacitance @ Vr, F: 167pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252-2
• Operating Temperature - Junction: -55°C ~ 175°C

Paket: TO-252-3, DPak (2 Leads + Tab), SC-63

C3D06060A

Cree/Wolfspeed

DIODE SCHOTTKY 600V 6A TO220-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 6A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 6A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 50µA @ 600V
• Capacitance @ Vr, F: 294pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220-2
• Operating Temperature - Junction: -55°C ~ 175°C

Paket: TO-220-2

C3D03060A

Cree/Wolfspeed

DIODE SCHOTTKY 600V 3A TO220-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 3A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 50µA @ 600V
• Capacitance @ Vr, F: 155pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220-2
• Operating Temperature - Junction: -55°C ~ 175°C

Paket: TO-220-2

C3D04060A

Cree/Wolfspeed

DIODE SCHOTTKY 600V 4A TO220-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 4A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 4A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 50µA @ 600V
• Capacitance @ Vr, F: 251pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220-2
• Operating Temperature - Junction: -55°C ~ 175°C

Paket: TO-220-2

C3D02060F

Cree/Wolfspeed

DIODE SCHOTTKY 600V 4A TO220-F2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 4A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 50µA @ 600V
• Capacitance @ Vr, F: 120pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Full Pack, Isolated Tab
• Supplier Device Package: TO-220-F2
• Operating Temperature - Junction: -55°C ~ 175°C

Paket: TO-220-2 Full Pack, Isolated Tab

C3D16065A

Cree/Wolfspeed

DIODE SCHOTTKY 650V 39A TO220-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 650V
• Current - Average Rectified (Io): 39A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 16A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 95µA @ 650V
• Capacitance @ Vr, F: 878pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220-2
• Operating Temperature - Junction: -55°C ~ 175°C

Paket: TO-220-2

C2D05120E

Cree/Wolfspeed

DIODE SCHOTTKY 1.2KV 17.5A TO252

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 5A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 200µA @ 1200V
• Capacitance @ Vr, F: 455pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252-2
• Operating Temperature - Junction: -55°C ~ 175°C

Paket: TO-252-3, DPak (2 Leads + Tab), SC-63

C2D10120A

Cree/Wolfspeed

DIODE SCHOTTKY 1.2KV 10A TO220-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 10A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 200µA @ 1200V
• Capacitance @ Vr, F: 1000pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220-2
• Operating Temperature - Junction: -55°C ~ 175°C

Paket: TO-220-2

C3D10065A

Cree/Wolfspeed

DIODE SCHOTTKY 650V 10A TO220-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 650V
• Current - Average Rectified (Io): 10A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 60µA @ 650V
• Capacitance @ Vr, F: 480pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220-2
• Operating Temperature - Junction: -55°C ~ 175°C

Paket: TO-220-2

C4D08120A

Cree/Wolfspeed

DIODE SCHOTTKY 1.2KV 8A TO220-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 8A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 7.5A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 250µA @ 1200V
• Capacitance @ Vr, F: 560pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220-2
• Operating Temperature - Junction: -55°C ~ 175°C

Paket: TO-220-2

C3D08060A

Cree/Wolfspeed

DIODE SCHOTTKY 600V 8A TO220-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 8A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 50µA @ 600V
• Capacitance @ Vr, F: 441pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220-2
• Operating Temperature - Junction: -55°C ~ 175°C

Paket: TO-220-2

CGHV40100P-TB

Cree/Wolfspeed

TEST FIXTURE FOR CGHV40100P

• Type: FET
• Frequency: 500MHz ~ 2.5GHz
• For Use With/Related Products: CGHV40100
• Supplied Contents: Partially Populated Board - Main IC Not Included

Paket: -

CGHV35150-TB

Cree/Wolfspeed

TEST FIXTURE FOR CGHV35150F

• Type: FET
• Frequency: 2.9GHz ~ 3.5GHz
• For Use With/Related Products: CGHV35150
• Supplied Contents: Partially Populated Board - Main IC Not Included

Paket: -

CGH40006P-TB

Cree/Wolfspeed

BOARD DEMO AMP CIRCUIT CGH40006P

• Type: HEMT
• Frequency: 500MHz ~ 6GHz
• For Use With/Related Products: CGH40006P
• Supplied Contents: Partially Populated Board - Main IC Not Included

Paket: -